PMBF4416TRL [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal;
| 型号： | PMBF4416TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal 晶体 晶体管 |
| 文件： | 总9页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4416; PMBF4416A
N-channel field-effect transistor
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
3
handbook, halfpage
DESCRIPTION
d
g
N-channel symmetrical silicon
s
junction FETs in a surface-mountable
SOT23 envelope. These devices are
intended for use in VHF/UHF
1
2
Top view
MAM385
amplifiers, oscillators and mixers.
PINNING - SOT23
Marking codes:
PMBF4416: P6A.
PMBF4416A: M16.
PIN
DESCRIPTION
source
1
2
3
Fig.1 Simplified outline and symbol.
drain
gate
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VDS
drain-source voltage
PMBF4416
−
−
5
30
35
15
V
PMBF4416A
V
IDSS
drain-source current
VDS = 15 V;
VGS = 0
mA
Ptot
total power
dissipation
up to Tamb = 25 °C −
250
mW
VGS(off)
gate-source cut-off
voltage
VDS = 15 V;
ID = 1 nA
PMBF4416
−
−6
V
PMBF4416A
−2.5 −6
4.5 7.5
V
Yfs
common-source
VDS = 15 V;
mS
transfer admittance
VGS = 0; f = 1 kHz
April 1995
2
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
PMBF4416
−
−
30
V
V
PMBF4416A
35
VGSO
gate-source voltage
PMBF4416
−
−
−30
−35
V
V
PMBF4416A
VGDO
gate-drain voltage
PMBF4416
−
−
−
−
−30
−35
10
V
V
PMBF4416A
IG
DC forward gate current
total power dissipation
storage temperature
junction temperature
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C (note 1)
250
+150
150
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient (note 1)
500 K/W
Note
1. Mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
PMBF4416
VDS = 0; IG = −1 µA
−30
−
V
PMBF4416A
−35
−
−
V
IGSS
reverse gate leakage current
drain current
VDS = 0; VGS = −15 V
VDS = 15 V; VGS = 0
VDS = 0; IG = 1 mA
VDS = 15 V; ID = 1 nA
1
nA
mA
V
IDSS
5
15
1
VGSS
VGS(off)
gate-source forward voltage
gate-source cut-off voltage
PMBF4416
−
−
−6
−6
7.5
V
PMBF4416A
−2.5
4.5
V
Yfs
common source transfer admittance
common source output admittance
PMBF4416
VDS = 15 V; VGS = 0
VDS = 15 V; VGS = 0
mS
Yos
−
−
50
50
µS
µS
PMBF4416A
April 1995
3
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0.
SYMBOL
PARAMETER
input capacitance
CONDITIONS
f = 1 MHz
MIN.
TYP.
MAX.
UNIT
pF
Cis
Cos
Crs
gis
−
−
−
−
−
−
4
−
−
−
−
−
−
−
−
−
−
4
2
output capacitance
f = 1 MHz
pF
feedback capacitance
f = 1 MHz
0.8
100
1
pF
common source input conductance
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
µS
mS
mS
mS
µS
gfs
grs
gos
Vn
common source transfer conductance
5.2
5
−
−
common source feedback conductance f = 100 MHz
f = 400 MHz
−8
−100
−
−
−
µS
common source output conductance
f = 100 MHz
f = 400 MHz
f = 100 Hz
75
100
−
µS
−
µS
equivalent input noise voltage
5
nV/√Hz
MRC168
MRC169
25
10
handbook, halfpage
handbook, halfpage
I
Y
DSS
fs
(mA)
(mS)
20
8
15
10
5
6
4
2
0
0
0
0
2
4
6
2
4
6
–V
(V)
GS(off)
–V
(V)
GS(off)
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.2 Drain current as a function of
gate-source cut-off voltage; typical values.
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
April 1995
4
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
MRC167
MRC163
80
handbook, halfpage
12
handbook, halfpage
G
os
I
µ
(
S)
D
(mA)
V
= 0 V
60
GS
8
40
20
0
–0.5 V
–1V
4
0
0
0
1
2
3
4
5
6
4
8
12
16
V
(V)
–V
(V)
GS(off)
DS
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.5 Typical output characteristics.
Fig.4 Common source output conductance as a
function of gate-source cut-off voltage;
typical values.
MRC164
MRC158
12
1
rs
(pF)
handbook, halfpage
handbook, halfpage
C
I
D
(mA)
0.8
8
0.6
0.4
0.2
0
4
0
–5
–4
–3
–2
–1
0
–10
–8
–6
–4
–2
0
V
(V)
V
(V)
GS
GS
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.6 Typical input characteristics.
Fig.7 Typical feedback capacitance.
April 1995
5
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
MRC157
MRC165
4
3.5
10
handbook, halfpage
handbook, halfpage
–I
C
is
G
(pA)
(pF)
3
2.5
2
3
I
= 1 mA
D
10
2
10
10
1
0.1 mA
1.5
1
I
GSS
–1
10
0.5
0
–2
10
0
4
8
12
16
20
(V)
–10
–8
–6
–4
–2
V
0
(V)
V
GS
DG
VDS = 15 V; Tj = 25 °C.
Fig.8 Typical input capacitance.
Fig.9 Gate current as a function of drain-gate
voltage, typical values.
MRC166
MRC160
300
100
handbook, halfpage
handbook, halfpage
g
, b
is is
P
tot
(mS)
(mW)
10
b
g
is
200
1
0.1
is
100
0.01
0
0
50
100
150
10
100
1000
o
f (MHz)
T
( C)
amb
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.10 Power derating curve.
Fig.11 Common source input conductance; typical
values.
April 1995
6
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
MRC159
MRC162
100
100
handbook, halfpage
handbook, halfpage
–g , –b
rs
rs
g
, –b
fs
(mS)
fs
(mS)
10
–b
–g
rs
rs
10
g
fs
1
0.1
–b
fs
1
0.01
0.1
10
0.001
100
1000
10
100
1000
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.12 Common source transfer conductance;
typical values.
Fig.13 Common source feedback conductance;
typical values.
SPICE parameters for PMBF4416
September 1992; version 1.0.
MRC161
1
VTO = −3.553
V
100
handbook, halfpage
2
BETA = 792.6
µA/V2
g
, b
os os
(mS)
3
LAMBDA = 18.46 m/V
10
4
RD = 7.671
RS = 7.671
IS = 333.4
Ω
5
Ω
b
os
6
aA
pF
pF
V
1
7
CGSO = 2.920
CGDO = 2.261
PB = 1.090
FC = 500.0
8
9
0.1
0.01
10 (note 1)
m
g
os
Note
1. Parameter not extracted; default value.
10
100
1000
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.14 Common source output conductance;
typical values.
April 1995
7
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
8
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
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