PMBFJ175TRL [NXP]

TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal;


型号：	PMBFJ175TRL
厂家：	NXP
描述：	TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal 开关光电二极管晶体管
文件：	总6页 (文件大小：31K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

PMBFJ174 to 177

P-channel silicon field-effect

transistors

April 1995

Product speciﬁcation

File under Discrete Semiconductors, SC07

Philips Semiconductors

Product speciﬁcation

P-channel silicon ﬁeld-effect transistors

PMBFJ174 to 177

DESCRIPTION

Silicon symmetrical p-channel

junction FETs in plastic

microminiature SOT23

envelopes.They are intended for

application with analogue switches,

choppers, commutators etc. using

SMD technology. A special feature is

handbook, halfpage

the interchangeability of the drain and

source connections.

PINNING

= drain

= source

= gate

Top view

MAM386

Note

1. Drain and source are

interchangeable.

Fig.1 Simplified outline and symbol, SOT23.

Marking codes:

174 : p6X

175 : p6W

176 : p6S

177 : p6Y

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage

Gate current

± V_DS

V_GSO

−I_G

max.

Total power dissipation

up to T_amb= 25 °C

P_tot

max.

300

PMBFJ174

175

176 177

Drain current

1,5 mA

20 mA

−V_DS= 15 V; V_GS= 0

−I_DSS

135

Drain-source ON-resistance

−V_DS= 0,1 V; V_GS= 0

R_{DS on}

125

250

300 Ω

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel silicon ﬁeld-effect transistors

PMBFJ174 to 177

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Gate-source voltage

Gate-drain voltage

± V_DS

V_GSO

V_GDO

−I_G

max.

Gate current (d.c.)

Total power dissipation

up to T_amb= 25 °C⁽¹⁾

Storage temperature range

Junction temperature

P_tot

T_stg

T_j

max.

300

−65 to + 150

150

°C

THERMAL RESISTANCE

From junction to ambient in free air

R_{th j-a}

430

K/W

STATIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

PMBFJ174 175 176 177

Gate cut-off current

V_GS= 20 V; V_DS= 0

Drain cut-off current

−V_DS= 15 V; V_GS= 10 V

Drain current

I_GSS

1 nA

−I_DSX

135

1,5 mA

20 mA

−V_DS= 15 V; V_GS= 0

−I_DSS

Gate-source breakdown voltage

I_G= 1 µA; V_DS= 0

V_(BR)GSS

30 V

Gate-source cut-off voltage

−I_D= 10 nA; V_DS= −15 V

0,8 V

2,25 V

V_{GS off}

Drain-source ON-resistance

−V_DS= 0,1 V; V_GS= 0

R_{DS on}

125 250 300 Ω

Note

1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel silicon ﬁeld-effect transistors

PMBFJ174 to 177

DYNAMIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

Input capacitance, f = 1 MHz

_GS= 10 V; V_DS= 0 V

C_is

typ.

V_GS= V_DS= 0

Feedback capacitance, f = 1 MHz

V_GS= 10 V; V_DS= 0 V

C_rs

typ.

Switching times (see Fig.2 + 3)

Delay time

PMBFJ174 175

176

177

t_d

t_r

typ.

20 ns

25 ns

45 ns

20 ns

25 ns

45 ns

Rise time

Turn-on time

t_on

t_s

Storage temperature

Fall time

t_f

Turn-off time

t_off

Test conditions:

−V_DD

V_{GS off}

R_L

6 V

3 V

560 1200 2000

2900 Ω

0 V

V_{GS on}

GSoff

90%

−V

handbook, halfpage

50 Ω

INPUT

10%

out

10%

90%

OUTPUT

D.U.T

90%

50 Ω

MBK293

MBK292

Rise time input voltage < 1 ns

Fig.3 Input and output waveforms

t_d+ t_r= t_on

Fig.2 Switching times test circuit

t_s+ t_f= t_off

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel silicon ﬁeld-effect transistors

PMBFJ174 to 177

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel silicon ﬁeld-effect transistors

PMBFJ174 to 177

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Short-form speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

April 1995

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