PMBFJ175 [NXP]
P-channel silicon field-effect transistors; P沟道硅音响场效晶体管型号: | PMBFJ175 |
厂家: | NXP |
描述: | P-channel silicon field-effect transistors |
文件: | 总6页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ174 to 177
P-channel silicon field-effect
transistors
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
3
handbook, halfpage
the interchangeability of the drain and
source connections.
d
g
s
PINNING
1
2
1
2
3
= drain
= source
= gate
Top view
MAM386
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol, SOT23.
Marking codes:
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Gate current
± VDS
VGSO
−IG
max.
max.
max.
30
30
50
V
V
mA
Total power dissipation
up to Tamb = 25 °C
Ptot
max.
300
mW
PMBFJ174
175
176 177
Drain current
>
20
7
70
2
1,5 mA
20 mA
−VDS = 15 V; VGS = 0
−IDSS
<
135
35
Drain-source ON-resistance
−VDS = 0,1 V; VGS = 0
RDS on
<
85
125
250
300 Ω
April 1995
2
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
± VDS
VGSO
VGDO
−IG
max.
max.
max.
max.
30
30
30
50
V
V
V
Gate current (d.c.)
mA
Total power dissipation
up to Tamb = 25 °C(1)
Storage temperature range
Junction temperature
Ptot
Tstg
Tj
max.
max.
300
−65 to + 150
150
mW
°C
°C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
430
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
PMBFJ174 175 176 177
Gate cut-off current
VGS = 20 V; VDS = 0
Drain cut-off current
−VDS = 15 V; VGS = 10 V
Drain current
IGSS
<
<
1
1
1
1
1
1
1 nA
1 nA
−IDSX
>
<
20
135
7
70
2
35
1,5 mA
20 mA
−VDS = 15 V; VGS = 0
−IDSS
Gate-source breakdown voltage
IG = 1 µA; VDS = 0
V(BR)GSS
>
30
30
30
30 V
Gate-source cut-off voltage
−ID = 10 nA; VDS = −15 V
>
<
5
10
3
6
1
4
0,8 V
2,25 V
VGS off
Drain-source ON-resistance
−VDS = 0,1 V; VGS = 0
RDS on
<
85
125 250 300 Ω
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.
April 1995
3
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
PMBFJ174 to 177
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Input capacitance, f = 1 MHz
V
GS = 10 V; VDS = 0 V
Cis
Cis
typ.
typ.
8
pF
pF
VGS = VDS = 0
30
Feedback capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V
Crs
typ.
4
pF
Switching times (see Fig.2 + 3)
Delay time
PMBFJ174 175
176
15
177
td
tr
typ.
typ.
typ.
typ.
typ.
typ.
2
5
5
20 ns
25 ns
45 ns
20 ns
25 ns
45 ns
Rise time
10
15
10
20
30
20
35
15
20
35
Turn-on time
ton
ts
7
Storage temperature
Fall time
5
tf
10
15
Turn-off time
toff
Test conditions:
−VDD
VGS off
RL
10
12
6
8
6
6
6 V
3 V
560 1200 2000
2900 Ω
0 V
VGS on
0
0
0
V
GSoff
90%
−V
handbook, halfpage
DD
50 Ω
INPUT
10%
V
out
R
10%
10%
90%
L
OUTPUT
V
D.U.T
in
90%
50 Ω
t
t
f
r
t
t
MBK293
s
d
MBK292
Rise time input voltage < 1 ns
Fig.3 Input and output waveforms
td + tr = ton
Fig.2 Switching times test circuit
ts + tf = toff
April 1995
4
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
PMBFJ174 to 177
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
5
Philips Semiconductors
Product specification
P-channel silicon field-effect transistors
PMBFJ174 to 177
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明