PMBFJ212 [NXP]
N-channel field-effect transistors; N沟道音响场效晶体管
| 型号： | PMBFJ212 |
| 厂家： | 
NXP |
| 描述： | N-channel field-effect transistors |
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ210; PMBFJ211;
PMBFJ212
N-channel field-effect transistors
Product specification
1997 Dec 01
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
FEATURES
PINNING - SOT23
• High speed switching
PIN
SYMBOL
DESCRIPTION
source
• Interchangeability of drain and source connections
• High impedance.
1
2
3
s
d
g
drain
gate
APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
• Audio amplifiers.
3
handbook, halfpage
d
s
g
DESCRIPTION
1
2
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
Top view
MAM385
CAUTION
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
V
VGSoff
gate-source cut-off voltage
PMBFJ210
ID = 1 nA; VDS = 15 V
−1
−3
V
V
V
PMBFJ211
−2.5
−4
−4.5
−6
PMBFJ212
IDSS
drain current
VGS = 0; VDS = 15 V
PMBFJ210
2
15
mA
mA
mA
mW
PMBFJ211
7
20
PMBFJ212
15
−
40
Ptot
yfs
total power dissipation
common-source transfer admittance
PMBFJ210
T
amb ≤ 25 °C
250
VGS = 0; VDS = 15 V
4
6
7
12
12
12
mS
mS
mS
PMBFJ211
PMBFJ212
1997 Dec 01
2
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
±25
UNIT
drain-source voltage
gate-source voltage
−
−
−
−
−
V
V
V
VGSO
VDGO
IG
open drain
open source
−25
−25
10
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
mA
mW
°C
Ptot
Tstg
Tj
T
amb ≤ 25 °C; note 1; see Fig.13
250
150
150
−65
operating junction temperature
−
°C
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to ambient; note 1
500
Note
1. Device mounted on an FR4 printed-circuit board.
1997 Dec 01
3
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
IG = −1 µA; VDS = 0
ID = 1 nA; VDS = 15 V
MIN.
MAX.
−25
UNIT
V(BR)GSS
VGSoff
gate-source breakdown voltage
gate-source cut-off voltage
PMBFJ210
−
V
−1
−3
−4.5
−6
1
V
V
V
V
PMBFJ211
−2.5
−4
−
PMBFJ212
VGSS
IDSS
gate-source forward voltage
drain current
IG = 0; VDS = 0
VGS = 0; VDS = 15 V
PMBFJ10
2
15
mA
mA
mA
pA
PMBFJ11
7
20
PMBFJ12
15
−
40
IGSS
yfs
reverse gate leakage current
common-source transfer admittance
PMBFJ210
VGS = −15 V; VDS = 0
−100
VGS = 0; VDS = 15 V
4
6
7
12
12
12
mS
mS
mS
PMBFJ211
PMBFJ212
yos
common source output admittance
PMBFJ210
VGS = 0; VDS = 15 V
−
−
−
150
200
200
µS
µS
µS
PMBFJ211
PMBFJ212
DYNAMIC CHARACTERISTICS
amb = 25 °C.
T
SYMBOL
PARAMETER
input capacitance
CONDITIONS
VDS = 15 V; VGS = −10 V; f = 1 MHz
DS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
DS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
DS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
DS = 15 V; VGS = 0; f = 450 MHz
TYP.
UNIT
Cis
2
pF
V
4
pF
Cos
Crs
gis
output capacitance
0.8
2
pF
V
pF
feedback capacitance
0.8
0.9
70
1.1
7.5
7.5
−8
−90
95
200
5
pF
V
pF
common source input conductance
common source transfer conductance
common source feedback conductance
common source output conductance
equivalent input noise voltage
µS
V
mS
mS
mS
µS
gfs
grs
gos
Vn
VDS = 15 V; VGS = 0; f = 100 MHz
VDS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
V
DS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 100 MHz
DS = 15 V; VGS = 0; f = 450 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
µS
µS
V
µS
nV/√Hz
1997 Dec 01
4
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM277
MGM278
40
12
handbook, halfpage
handbook, halfpage
I
DSS
y
fs
(mA)
(mS)
30
8
20
10
0
4
0
0
−2
−4
−6
0
−2
−4
−6
(V)
V
V
(V)
GSoff
GSoff
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.3 Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
MGM280
MGM279
80
8
handbook, halfpage
handbook, halfpage
g
I
os
D
(µS)
(mA)
V
= 0 V
GS
60
6
4
2
0
−200 mV
−400 mV
40
20
0
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
0
−2
−4
−6
0
2
4
6
8
10
(V)
V
(V)
GSoff
V
DS
VDS = 15 V; Tamb = 25 °C.
PMBFJ210.
Tj = 25 °C.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
Fig.5 Output characteristics; typical values.
1997 Dec 01
5
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM281
MGM282
8
20
handbook, halfpage
handbook, halfpage
I
D
(mA)
I
D
(mA)
V
= 0 V
16
12
8
GS
6
−200 mV
−400 mV
−600 mV
−800 mV
4
2
0
−1 V
−1.2 V
−1.4 V
4
0
−2.5
−2
−1.5
−1
−0.5
0
(V)
0
2
4
6
8
10
(V)
V
V
DS
GS
PMBFJ210.
VDS = 10 V; Tj = 25 °C.
PMBFJ211.
Tj = 25 °C.
Fig.6 Input characteristics; typical values.
Fig.7 Output characteristics; typical values.
MGM283
MGM284
20
24
handbook, halfpage
handbook, halfpage
I
D
V
= 0 V
GS
(mA)
16
I
D
−200 mV
−400 mV
−600 mV
(mA)
16
−800 mV
−1 V
−1.2 V
−1.4 V
12
8
8
4
0
−6
0
0
−4
−2
0
2
4
6
8
10
(V)
V
(V)
GS
V
DS
PMBFJ211.
PMBFJ212.
VDS = 10 V; Tj = 25 °C.
Tj = 25 °C.
Fig.8 Input characteristics; typical values.
Fig.9 Output characteristics; typical values.
1997 Dec 01
6
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM285
MGM286
24
2
handbook, halfpage
handbook, halfpage
C
rs
I
D
(pF)
(mA)
1.5
16
1
0.5
0
8
0
−6
−4
−2
0
−10
−8
−6
−4
−2
0
(V)
V
(V)
GS
V
GS
PMBFJ212.
VDS = 15 V; f = 1 Mhz; Tamb = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.11 Feedback capacitance as a function of
gate-source voltage; typical values.
Fig.10 Input characteristics; typical values.
MGM287
MGM295
5
300
handbook, halfpage
handbook, halfpage
C
is
(pF)
P
tot
4
(mW)
200
3
2
1
0
100
0
−10
−8
−6
−4
−2
0
0
50
100
150
(°C)
T
amb
V
(V)
GS
VDS = 15 V; f = 1 Mhz; Tamb = 25 °C.
Fig.12 Input capacitance as a function of
gate-source voltage; typical values.
Fig.13 Power derating curve.
1997 Dec 01
7
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM289
MGM288
3
5
10
−10
handbook, halfpage
handbook, halfpage
I
I
D
(µA)
G
(pA)
I
= 10 mA
D
2
4
3
2
10
−10
10
1
−10
−10
1 mA
0.1 mA
−1
10
−10
I
−2
−1
−1
GSS
10
−3
−10
10
0
4
8
12
16
V
20
(V)
DG
−4
10
−5
10
−4
−3
−2
−1
0
V
(V)
GS
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.14 Drain current as a function of gate-source
voltage; typical values.
Fig.15 Gate current as a function of drain-gate
voltage; typical values.
1997 Dec 01
8
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM291
MGM292
2
2
10
10
handbook, halfpage
handbook, halfpage
y
is
(mS)
y
fs
10
(mS)
b
is
1
10
g
fs
g
is
−1
10
−b
fs
−2
10
1
10
2
3
2
3
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.16 Common source input admittance as a
function of frequency; typical values.
Fig.17 Common source transfer admittance as
a function of frequency; typical values.
MGM294
MGM293
10
10
handbook, halfpage
handbook, halfpage
y
rs
(mS)
y
os
(mS)
−b
rs
1
b
os
1
−1
−2
−3
10
10
10
g
os
−g
rs
−1
10
10
−2
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.18 Common source reverse admittance as
a function of frequency; typical values.
Fig.19 Common source output admittance as
a function of frequency; typical values.
1997 Dec 01
9
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Dec 01
10
Philips Semiconductors
Productspecification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 01
11
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
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P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117067/00/01/pp12
Date of release: 1997 Dec 01
Document order number: 9397 750 02788
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SI9122E
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