PMBFJ309-T [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal;
| 型号： | PMBFJ309-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal 晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 放大器 |
| 文件： | 总12页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect
transistors
Product specification
1996 Sep 11
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
FEATURES
PINNING - SOT23
• Low noise
PIN
SYMBOL
DESCRIPTION
source
• Interchangeability of drain and source connections
• High gain.
1
2
3
s
d
g
drain
gate
APPLICATIONS
• AM input stage in car radios
• VHF amplifiers
handbook, age
2
1
• Oscillators and mixers.
d
s
g
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
3
Top view
MAM036
CAUTION
Marking codes:
PMBFJ308: M08.
PMBFJ309: M09.
PMBFJ310: M10.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
V
VGSoff
gate-source cut-off voltage
PMBFJ308
VDS = 10 V; ID = 1 µA
−1
−1
−2
−6.5
−4
V
V
V
PMBFJ309
PMBFJ310
−6.5
IDSS
drain current
VGS = 0; VDS = 10 V
PMBFJ308
12
12
24
−
60
30
60
250
−
mA
mA
mA
mW
mS
PMBFJ309
PMBFJ310
Ptot
yfs
total power dissipation
forward transfer admittance
up to Tamb = 25 °C
VDS = 10 V; ID = 10 mA
10
1996 Sep 11
2
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±25
UNIT
−
−
−
−
−
V
V
V
VGSO
VGDO
IG
gate-source voltage
open drain
−25
−25
50
gate-drain voltage
open source
forward gate current (DC)
total power dissipation
storage temperature
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C
250
150
150
−65
operating junction temperature
−
°C
MBB688
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
50
100
150
200
(°C)
T
amb
Fig.2 Power derating curve.
1996 Sep 11
3
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
gate-source breakdown voltage IG = −1 µA; VDS = 0
−25
−
−
V
V
V
V
V
V
gate-source cut-off voltage
PMBFJ308
ID = 1 µA; VDS = 10 V
−1
−1
−2
−
−
−
−
−
−6.5
−4
PMBFJ309
PMBFJ310
−6.5
1
VGSS
IDSS
gate-source forward voltage
drain current
IG = 1 mA; VDS = 0
VDS = 10 V; VGS = 0
PMBFJ308
12
12
24
−
−
60
30
60
−1
−
mA
PMBFJ309
−
mA
mA
nA
Ω
PMBFJ310
−
IGSS
gate leakage current
VGS = −15 V; VDS = 0
−
RDSon
drain-source on-state
resistance
VGS = 0; VDS = 100 mV
−
50
yfs
forward transfer admittance
ID = 10 mA; VDS = 10 V
ID = 10 mA; VDS = 10 V
10
−
−
−
mS
yos
common source output
admittance
−
250
µS
1996 Sep 11
4
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
Cis
PARAMETER
input capacitance
CONDITIONS
TYP. MAX.
UNIT
pF
VDS = 10 V; VGS = −10 V; f = 1 MHz
VDS = 10 V; VGS = 0; Tamb = 25 °C
VDS = 0; VGS = −10 V; f = 1 MHz
3
5
6
−
pF
Crs
gis
reverse transfer capacitance
1.3
200
3
2.5
−
pF
common source input
conductance
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 Hz
µS
−
mS
mS
mS
µS
gfs
grs
gos
Vn
common source transfer
conductance
13
−
12
−
common source reverse
conductance
−30
−450
150
400
6
−
−
µS
common source output
conductance
−
µS
−
µS
equivalent input noise voltage
−
nV/√Hz
MCD220
MCD219
50
20
handbook, halfpage
handbook, halfpage
I
y
DSS
(mA)
fs
(mS)
40
16
30
20
10
12
8
4
0
0
0
0
−2
−4
−6
−8
(V)
−1
−2
−3
−4
(V)
V
V
GSoff
GSoff
VDS = 10 V; ID = 10 mA; Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.4 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
1996 Sep 11
5
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
MCD221
MCD222
150
80
handbook, halfpage
handbook, halfpage
R
DSon
(Ω)
g
os
(µS)
60
100
40
20
50
0
0
0
−1
−2
−3
−4
(V)
0
−1
−2
−3
V
−4
(V)
V
GSoff
GSoff
VDS = 10 V; ID = 10 mA; Tj = 25 °C.
VDS = 100 mV; VGS = 0; Tj = 25 °C.
Fig.5 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
Fig.6 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
MCD213
MCD216
16
16
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
12
8
12
−0.25 V
−0.5 V
8
4
4
−0.75 V
−1 V
0
0
0
4
8
12
16
−2
−1.5
−1
−0.5
0
V
(V)
V
(V)
GS
DS
Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.7 Typical output characteristics; PMBFJ308.
Fig.8 Typical transfer characteristics; PMBFJ308.
1996 Sep 11
6
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
MCD215
MCD218
20
20
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
16
16
12
8
−0.25 V
−0.5 V
12
8
−0.75 V
−1 V
4
4
0
−2
0
−1.5
−1
−0.5
0
0
4
8
12
16
V
(V)
GS
V
(V)
DS
VDS = 10 V; Tj = 25 °C.
Tj = 25 °C.
Fig.9 Typical output characteristics; PMBFJ309.
Fig.10 Typical transfer characteristics; PMBFJ309.
MCD217
MCD214
40
40
handbook, halfpage
handbook, halfpage
V
= 0 V
GS
I
I
D
(mA)
D
(mA)
30
30
−0.5 V
−1 V
20
10
0
20
10
0
−1.5 V
−2 V
−2.5 V
0
4
8
12
16
−4
−3
−2
−1
0
V
(V)
V
(V)
GS
DS
Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.11 Typical output characteristics; PMBFJ310.
Fig.12 Typical transfer characteristics; PMBFJ310.
1996 Sep 11
7
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
MCD224
MCD223
4
10
handbook, halfpage
handbook, halfpage
C
is
C
rs
(pF)
(pF)
8
3
6
4
2
2
1
0
0
−10
−10
−8
−6
−4
−2
0
−8
−6
−4
−2
0
V
(V)
V
(V)
GS
GS
VDS = 10 V; Tj = 25 °C.
VDS = 10 V; Tj = 25 °C.
Fig.13 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
MCD229
3
10
I
D
(µA)
2
10
10
1
−1
10
−2
10
−3
10
−2.5
−2
−1.5
−1
−0.5
0
V
(V)
GS
VDS = 10 V; Tj = 25 °C.
Fig.15 Drain current as a function of gate-source voltage; typical values.
8
1996 Sep 11
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
MCD230
4
−10
I
= 10 mA
1 mA
I
D
G
(pA)
3
−10
2
−10
100 µA
−10
−1
I
GSS
−1
−10
0
2
4
6
8
10
12
14
16
V
(V)
DG
Tj = 25 °C.
Fig.16 Gate current as a function of drain-gate voltage; typical values.
MCD231
4
10
I
GSS
(pA)
3
10
2
10
10
1
−1
10
−25
0
25
50
75
100
125
150
175
o
T ( C)
j
Fig.17 Gate current as a function of junction temperature; typical values.
9
1996 Sep 11
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
MCD228
MCD227
100
100
handbook, halfpage
handbook, halfpage
g
, b
is is
g
, −b
(mS)
fs
(mS)
fs
b
is
10
g
fs
10
g
is
−b
1
fs
1
10
0.1
10
100
1000
100
1000
f (MHz)
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.18 Input admittance; typical values.
Fig.19 Forward transfer admittance; typical values.
MCD225
MCD226
100
2
10
handbook, halfpage
handbook, halfpage
−b , −g
b
, g
rs
rs
os os
(mS)
(mS)
10
10
− b
− g
rs
1
b
g
os
1
rs
−1
10
os
−2
0.1
10
10
100
1000
10
100
1000
f (MHz)
f (MHz)
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
VDS = 10 V; ID = 10 mA; Tamb = 25 °C.
Fig.20 Reverse transfer admittance; typical values.
Fig.21 Output admittance; typical values.
1996 Sep 11
10
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.22 SOT 23.
1996 Sep 11
11
Philips Semiconductors
Productspecification
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 11
12
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