PMBTA44 [NXP]
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor; 400 V ， 0.3 A NPN高电压低VCEsat晶体管（ BISS ）晶体管
| 型号： | PMBTA44 |
| 厂家： | 
NXP |
| 描述： | 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMBTA44
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Low current (max. 300 mA)
I High voltage (max. 400 V)
I AEC-Q101 qualified
1.3 Applications
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch mode power supply
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
400
300
200
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
mA
hFE
DC current gain
VCE = 10 V; IC = 10 mA
50
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Symbol
3
3
2
emitter
3
collector
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PMBTA44
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMBTA44
W3*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
2 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
500
400
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
300
300
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
100
mA
tp ≤ 1 ms
[1]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
250
mW
°C
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab196
300
P
tot
(mW)
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Power derating curve SOT23 (TO-236AB)
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
3 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
500 K/W
[1]
thermal resistance from junction to in free air
ambient
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab151
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.5
0.33
(K/W)
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
SOT23 (TO-236AB)
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
4 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = 320 V; IE = 0 A
Min
Typ
Max
100
10
Unit
nA
ICBO
-
-
-
-
current
VCB = 320 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off VEB = 4 V; IC = 0 A
current
-
-
100
nA
DC current gain
VCE = 10 V
IC = 10 mA
50
45
40
-
-
-
-
-
-
-
-
200
-
[1]
[1]
IC = 50 mA
IC = 100 mA
-
VCEsat
collector-emitter
saturation voltage
IC = 1 mA; IB = 0.1 mA
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IC = 10 mA; IB = 1 mA
400
500
750
850
mV
mV
mV
mV
-
[1]
[1]
-
VBEsat
fT
base-emitter
saturation voltage
-
transition frequency VCE = 10 V; IE = 10 mA;
f = 100 MHz
20
-
-
-
-
-
MHz
pF
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
f = 1 MHz
7
Ce
emitter capacitance VEB = 0.5 V;
IC = ic = 0 A; f = 1 MHz
-
180
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
5 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
006aab190
006aab191
200
0.3
I
(mA) = 26
23.4
B
h
FE
I
C
(A)
20.8
150
18.2
15.6
(1)
(2)
0.2
13
10.4
7.8
5.2
100
50
0
0.1
(3)
2.6
0
−1
2
3
10
1
10
10
10
0
1
2
3
4
5
I
(mA)
V
(V)
CE
C
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab192
006aab193
1.2
1.2
V
(V)
V
BE
BEsat
(V)
(1)
(1)
0.8
0.8
0.4
0
(2)
(3)
(2)
(3)
0.4
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 10 V
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function of
collector current; typical values
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
6 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
006aab194
006aab195
3
1
10
R
CEsat
(Ω)
V
CEsat
(V)
2
10
−1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
1
−2
−1
10
10
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 5
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
7 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 9. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-215
10000
PMBTA44
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
8 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
11. Soldering
2.90
2.50
2
1
0.85
0.85
solder lands
solder resist
3.00
1.30
2.70
solder paste
3
occupied area
Dimensions in mm
0.60
(3x)
0.50 (3x)
0.60 (3x)
1.00
3.30
sot023
Fig 10. Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
Dimensions in mm
preferred transport direction during soldering
sot023
2.80
4.50
Fig 11. Wave soldering footprint SOT23 (TO-236AB)
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
9 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMBTA44_1
20080222
Product data sheet
-
-
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
10 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PMBTA44_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 22 February 2008
11 of 12
PMBTA44
NXP Semiconductors
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 February 2008
Document identifier: PMBTA44_1
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