PMEG2005CT,215 [NXP]
PMEG2005CT - 500 mA low V_F dual MEGA Schottky barrier rectifier TO-236 3-Pin;
| 型号： | PMEG2005CT,215 |
| 厂家： | 
NXP |
| 描述： | PMEG2005CT - 500 mA low V_F dual MEGA Schottky barrier rectifier TO-236 3-Pin 光电二极管 |
| 文件： | 总13页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEG2005CT
500 mA low VF dual MEGA Schottky barrier rectifier
Rev. 01 — 4 June 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
1.2 Features
I Average forward current: IF(AV) ≤ 0.5 A I AEC-Q101 qualified
I Reverse voltage: VR ≤ 20 V
I Low forward voltage
I Small SMD plastic package
1.3 Applications
I Low voltage rectification
I Reverse polarity protection
I High-speed switching
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol
Per diode
IF(AV)
Parameter
Conditions
Min
Typ
Max
Unit
average forward current
square wave;
δ = 0.5;
f = 20 kHz
[1]
T
T
amb ≤ 100 °C
sp ≤ 130 °C
-
-
-
-
-
-
0.5
0.5
20
A
-
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
-
V
IF = 0.5 A
VR = 20 V
360
30
390
200
mV
µA
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
anode (diode 1)
anode (diode 2)
common cathode
3
3
2
3
1
2
1
2
006aab034
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PMEG2005CT
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
PMEG2005CT
Marking code[1]
P8*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
Tj = 25 °C
-
20
V
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
[1]
[2]
T
T
amb ≤ 100 °C
sp ≤ 130 °C
-
-
-
0.5
0.5
3.9
A
A
A
IFRM
IFSM
repetitive peak forward
current
tp ≤ 1 ms;
δ ≤ 0.25
non-repetitive peak
forward current
square wave;
tp = 8 ms
-
10
A
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
2 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per device; one diode loaded
[3]
[4]
[1]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
330
mW
mW
mW
°C
-
400
-
460
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Per diode; one diode loaded
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
[4]
[5]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
375
310
270
60
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
3 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
006aab533
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.01
0.02
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab534
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.33
0.2
0.5
2
10
0.25
0.1
0.05
0.01
0.02
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
4 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
006aab535
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.5
2
10
0.33
0.2
0.25
0.1
0.05
0.01
0.02
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Per diode
VF
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 0.1 mA
IF = 1 mA
-
-
-
-
-
-
-
-
-
95
130
190
240
330
390
40
mV
mV
mV
mV
mV
µA
µA
pF
155
215
285
360
11
IF = 10 mA
IF = 100 mA
IF = 500 mA
VR = 10 V
IR
reverse current
VR = 20 V
30
200
80
Cd
trr
diode capacitance
VR = 1 V; f = 1 MHz
66
[1]
reverse recovery time
22
-
ns
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
5 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
006aab536
006aab537
−2
10
10
R
I
I
F
(1)
(2)
(A)
10
(A)
−3
−4
−5
−6
−7
−8
−9
1
(1)
(2)
10
10
10
10
10
10
−1
10
10
10
10
(3)
(3)
(4)
(5)
−2
−3
−4
(4)
0
0.2
0.4
0.6
0
5
10
15
20
V
(V)
V (V)
R
F
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
006aab538
125
C
d
(pF)
100
75
50
25
0
0
5
10
15
20
V
(V)
R
f = 1 MHz; Tamb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
6 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
006aab539
(4)
006aab540
0.25
0.5
P
P
F(AV)
(W)
R(AV)
(W)
0.20
0.15
0.10
0.05
0.0
0.4
0.3
0.2
0.1
0.0
(3)
(2)
(1)
(1)
(2)
(3)
(4)
0.0
0.25
0.50
0.75
0
5
10
15
20
I
(A)
V (V)
R
F(AV)
Tj = 150 °C
Tj = 125 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
006aab541
006aab542
0.75
0.75
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
0.50
0.25
0.0
0.50
0.25
0.0
(3)
(4)
(3)
(4)
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
amb
175
T
amb
FR4 PCB, standard footprint
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
7 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
006aab543
006aab544
0.75
0.75
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
0.50
0.25
0.0
0.50
0.25
0.0
(3)
(4)
(3)
(4)
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
sp
175
T
amb
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1; DC
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
solder point temperature; typical values
8. Test information
t
t
p
r
t
D.U.T.
10 %
I
+ I
F
t
F
rr
R
S
= 50 Ω
SAMPLING
OSCILLOSCOPE
t
R
i
= 50 Ω
V = V + I × R
S
R
F
(1)
90 %
V
R
mga881
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 13. Reverse recovery time test circuit and waveforms
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
8 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 14. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM
× δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 15. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
-215
10000
PMEG2005CT SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
9 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 16. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 17. Wave soldering footprint SOT23 (TO-236AB)
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
10 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG2005CT_1
20090604
Product data sheet
-
-
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
11 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEG2005CT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 4 June 2009
12 of 13
PMEG2005CT
NXP Semiconductors
500 mA low VF dual MEGA Schottky barrier rectifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 June 2009
Document identifier: PMEG2005CT_1
相关型号：
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