PMEG2005ELD [NXP]

20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current; 20 V , 0.5 A的低VF MEGA肖特基势垒整流器低反向电流
PMEG2005ELD
型号: PMEG2005ELD
厂家: NXP    NXP
描述:

20 V, 0.5 A low VF MEGA Schottky barrier rectifier Low reverse current
20 V , 0.5 A的低VF MEGA肖特基势垒整流器低反向电流

整流二极管 光电二极管
文件: 总14页 (文件大小:785K)
中文:  中文翻译
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PMEG2005ELD  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
Rev. 1 — 4 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra  
small Surface-Mounted Device (SMD) plastic package with visible and solderable side  
pads.  
1.2 Features and benefits  
„ Forward current: IF 0.5 A  
„ Reverse voltage: VR 20 V  
„ Low forward voltage: VF 500 mV  
„ Low reverse current  
„ AEC-Q101 qualified  
„ Solderable side pads  
„ Package height typ. 0.37 mm  
„ Ultra small and leadless SMD plastic  
package  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switch Mode Power Supply (SMPS)  
„ Reverse polarity protection  
„ Low power consumption applications  
„ Ultra high-speed switching  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
IF(AV)  
average forward  
current  
square wave; δ = 0.5; f = 20 kHz  
Tamb 85 °C  
[1]  
[2]  
-
-
-
-
-
-
0.5  
0.5  
30  
A
Tsp 130 °C  
-
A
IR  
reverse current  
reverse voltage  
forward voltage  
VR = 10 V  
5
μA  
V
VR  
VF  
-
20  
IF = 500 mA  
450  
500  
mV  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
1
2
2
anode  
1
2
sym001  
Transparent  
top view  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
PMEG2005ELD  
leadless ultra small plastic package; 2 terminals; SOD882D  
body 1 × 0.6 × 0.4 mm  
4. Marking  
Table 4.  
Marking codes  
Type number  
PMEG2005ELD  
Marking code[1]  
0101 0000  
[1] For SOD882D binary marking code description, see Figure 1.  
4.1 Binary marking code description  
CATHODE BAR  
READING DIRECTION  
VENDOR CODE  
READING EXAMPLE:  
0111  
1011  
MARKING CODE  
(EXAMPLE)  
READING DIRECTION  
006aac477  
Fig 1. SOD882D binary marking code description  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
2 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
Unit  
VR  
reverse voltage  
-
20  
V
IF(AV)  
average forward current square wave; δ = 0.5;  
f = 20 kHz  
[1]  
[2]  
Tamb 85 °C  
Tsp 130 °C  
-
-
-
0.5  
0.5  
2.5  
A
A
A
IFRM  
IFSM  
Ptot  
repetitive peak forward  
current  
tp 1 ms; δ ≤ 0.25  
square wave; tp = 8 ms  
Tamb 25 °C  
non-repetitive peak  
forward current  
-
3
A
[3]  
[1]  
[4]  
total power dissipation  
-
340  
mW  
mW  
mW  
°C  
-
660  
-
1000  
150  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
55  
65  
+150  
+150  
°C  
°C  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[2] Tj = 25 °C prior to surge.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
3 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1][2]  
[1][3]  
[1][4]  
[5]  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
-
-
370  
190  
125  
50  
K/W  
K/W  
K/W  
K/W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse  
power losses PR are a significant part of the total power losses.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[5] Soldering point of cathode tab.  
006aac569  
3
10  
duty cycle =  
1
Z
th(j-a)  
(K/W)  
0.75  
0.5  
0.33  
0.2  
2
10  
0.25  
0.05  
0.1  
0.02  
0.01  
0
10  
10  
–3  
–2  
–1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
4 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
006aac570  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
1
0.75  
2
10  
0.5  
0.25  
0.1  
0.33  
0.2  
0.05  
0.02  
0.01  
0
10  
10  
–3  
–2  
–1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for cathode 1 cm2  
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
006aac571  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
2
1
0.75  
10  
0.5  
0.33  
0.1  
0.25  
0.2  
0.05  
0.02  
0.01  
0
10  
10  
–3  
–2  
–1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
Ceramic PCB, Al2O3, standard footprint  
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
5 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
7. Characteristics  
Table 7.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
VF  
forward voltage  
IF = 0.1 mA  
IF = 1 mA  
-
-
-
-
-
-
-
-
115  
175  
240  
320  
450  
5
180  
240  
290  
380  
500  
30  
mV  
mV  
mV  
mV  
mV  
μA  
pF  
IF = 10 mA  
IF = 100 mA  
IF = 500 mA  
VR = 10 V  
IR  
reverse current  
Cd  
trr  
diode capacitance VR = 1 V; f = 1 MHz  
24  
30  
[2]  
reverse recovery  
time  
7
-
ns  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  
006aac572  
006aac573  
–2  
10  
10  
R
I
(1)  
I
F
(A)  
10  
(A)  
–3  
–4  
–5  
–6  
–7  
–8  
–9  
1
(2)  
(3)  
(1)  
(2)  
10  
10  
10  
10  
10  
10  
–1  
10  
10  
10  
10  
(3)  
(4)  
(5)  
–2  
–3  
–4  
(4)  
0
0.2  
0.4  
0.6  
0.8  
0
5
10  
15  
20  
V
(V)  
V (V)  
R
F
(1) Tj = 150 °C  
(2) Tj = 125 °C  
(3) Tj = 85 °C  
(4) Tj = 25 °C  
(5) Tj = 40 °C  
(1) Tj = 125 °C  
(2) Tj = 85 °C  
(3) Tj = 25 °C  
(4) Tj = 40 °C  
Fig 5. Forward current as a function of forward  
voltage; typical values  
Fig 6. Reverse current as a function of reverse  
voltage; typical values  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
6 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
006aac574  
50  
C
d
(pF)  
40  
30  
20  
10  
0
0
5
10  
15  
20  
V
R
(V)  
f = 1 MHz; Tamb = 25 °C  
Fig 7. Diode capacitance as a function of reverse voltage; typical values  
006aac575  
006aac576  
0.4  
0.100  
P
(W)  
P
R(AV)  
(W)  
F(AV)  
(4)  
(3)  
0.3  
0.075  
0.050  
0.025  
0.000  
(2)  
(1)  
(2)  
(1)  
(3)  
(4)  
0.2  
0.1  
0.0  
0.00  
0.25  
0.50  
0.75  
0
5
10  
15  
20  
I
(A)  
V (V)  
R
F(AV)  
Tj = 150 °C  
Tj = 125 °C  
(1) δ = 0.1  
(2) δ = 0.2  
(3) δ = 0.5  
(4) δ = 1  
(1) δ = 1  
(2) δ = 0.9  
(3) δ = 0.8  
(4) δ = 0.5  
Fig 8. Average forward power dissipation as a  
function of average forward current; typical  
values  
Fig 9. Average reverse power dissipation as a  
function of reverse voltage; typical values  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
7 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
006aac577  
006aac578  
0.75  
0.75  
(1)  
(1)  
I
I
F(AV)  
(A)  
F(AV)  
(A)  
(2)  
(2)  
0.50  
0.50  
(3)  
(4)  
(3)  
(4)  
0.25  
0.00  
0.25  
0.00  
0
25  
50  
75  
100  
125  
150  
(°C)  
175  
0
25  
50  
75  
100  
125  
150  
T (°C)  
amb  
175  
T
amb  
FR4 PCB, standard footprint  
FR4 PCB, mounting pad for cathode 1 cm2  
Tj = 150 °C  
Tj = 150 °C  
(1) δ = 1; DC  
(1) δ = 1; DC  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
Fig 10. Average forward current as a function of  
ambient temperature; typical values  
Fig 11. Average forward current as a function of  
ambient temperature; typical values  
006aac579  
006aac580  
0.75  
0.75  
(1)  
(1)  
I
I
F(AV)  
(A)  
F(AV)  
(A)  
(2)  
(2)  
0.50  
0.50  
(3)  
(4)  
(3)  
(4)  
0.25  
0.00  
0.25  
0.00  
0
25  
50  
75  
100  
125  
150  
(°C)  
175  
0
25  
50  
75  
100  
125  
150  
T (°C)  
sp  
175  
T
amb  
Ceramic PCB, Al2O3, standard footprint  
Tj = 150 °C  
(1) δ = 1; DC  
Tj = 150 °C  
(1) δ = 1; DC  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
Fig 12. Average forward current as a function of  
ambient temperature; typical values  
Fig 13. Average forward current as a function of  
solder point temperature; typical values  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
8 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
8. Test information  
t
r
t
p
t
D.U.T.  
10 %  
I
F
+ I  
F
t
rr  
R
S
= 50 Ω  
SAMPLING  
OSCILLOSCOPE  
t
R
= 50 Ω  
V = V + I × R  
S
i
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
(1) IR = 1 mA  
Fig 14. Reverse recovery time test circuit and waveforms  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig 15. Duty cycle definition  
The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are  
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,  
IRMS = IF(AV) at DC, and IRMS = IM  
× δ with IRMS defined as RMS current.  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
9 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
9. Package outline  
0.65  
0.55  
0.4  
max  
2
0.30  
0.22  
1.05  
0.65  
0.95  
1
0.30  
0.22  
0.55  
0.45  
cathode marking on top side  
10-08-06  
Dimensions in mm  
Fig 16. Package outline SOD882D  
10. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
10000  
PMEG2005ELD  
SOD882D 2 mm pitch, 8 mm tape and reel  
-315  
[1] For further information and the availability of packing methods, see Section 14.  
11. Soldering  
1.4  
0.2  
solder lands  
solder resist  
solder paste  
0.8  
(2×)  
0.6 0.7  
(2×) (2×)  
Dimensions in mm  
0.3  
0.4  
1
1.3  
sod882d_fr  
Reflow soldering is the only recommended soldering method.  
Fig 17. Reflow soldering SOD882D  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
10 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
12. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PMEG2005ELD v.1  
20110504  
Product data sheet  
-
-
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
11 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
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applications and products.  
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data sheet shall define the specification of the product as agreed between  
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shall an agreement be valid in which the NXP Semiconductors product is  
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Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
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Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
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Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
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limitation specifications and product descriptions, at any time and without  
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to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
12 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PMEG2005ELD  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 4 May 2011  
13 of 14  
PMEG2005ELD  
NXP Semiconductors  
20 V, 0.5 A low VF MEGA Schottky barrier rectifier  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Binary marking code description. . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9  
Quality information . . . . . . . . . . . . . . . . . . . . . . 9  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packing information . . . . . . . . . . . . . . . . . . . . 10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
4.1  
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 4 May 2011  
Document identifier: PMEG2005ELD  

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