PMEG2010BEA [NXP]
1 A very low VF MEGA Schottky barrier rectifier; 1一个非常低VF MEGA肖特基势垒整流器
| 型号： | PMEG2010BEA |
| 厂家： | 
NXP |
| 描述： | 1 A very low VF MEGA Schottky barrier rectifier |
| 文件： | 总11页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEGXX10BEA;
PMEGXX10BEV
1 A very low VF MEGA Schottky
barrier rectifier
Product specification
2004 Jun 14
Supersedes data of 2004 Apr 02
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
QUICK REFERENCE DATA
• Forward current: 1 A
SYMBOL
IF
PARAMETER
MAX.
UNIT
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
forward current
reverse voltage
1
A
VR
20; 30; 40
V
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
PINNING
PIN
DESCRIPTION
APPLICATIONS
PMEGXX10BEA (see Fig.1)
• High efficiency DC-to-DC conversion
• Voltage clamping
1
2
cathode
anode
• Protection circuits
PMEGXX10BEV (see Fig.2)
• Low voltage rectification
• Blocking diodes
1, 2, 5, 6
3, 4
cathode
anode
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
1
2
1
2
sym001
Top view
MARKING
The marking bar indicates the cathode.
TYPE NUMBER
PMEG2010BEA
MARKING CODE
V1
V2
V3
G6
G5
G4
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
6
5
4
1, 2
5, 6
3, 4
sym038
1
Top view
2
3
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PMEGXX10BEA
PMEGXX10BEV
−
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
SOD323
SOT666
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
continuous forward current
−
−
−
−
−
−
20
V
V
V
A
A
A
30
40
1
IF
Ts ≤ 55 °C; note 1
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 2
3.5
10
tp = 8 ms; square wave;
note 2
Tj
junction temperature
note 3
note 3
−
150
°C
°C
°C
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
+150
+150
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
2004 Jun 14
3
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
PMEGXX10BEA (SOD323)
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
450
210
90
K/W
K/W
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
PMEGXX10BEV (SOT666)
Rth(j-a)
Rth(j-s)
Notes
thermal resistance from junction to
ambient
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
405
215
80
K/W
K/W
K/W
thermal resistance from junction to
soldering point
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV
SYMBOL
PARAMETER
CONDITIONS
UNIT
TYP.
90
MAX.
130
TYP.
90
MAX.
130
TYP.
95
MAX.
130
VF
forward voltage
IF = 0.1 mA
mV
mV
mV
mV
mV
mV
µA
IF = 1 mA
150
210
280
355
420
15
190
240
330
390
500
40
150
215
285
380
450
12
200
250
340
430
560
30
155
220
295
420
540
7
210
270
350
470
640
20
IF = 10 mA
IF = 100 mA
IF = 500 mA
IF = 1000 mA
IR
continuousreverse VR = 10 V; note 1
current
VR = 20 V; note 1
40
200
−
−
−
−
−
µA
VR = 30 V; note 1
VR = 40 V; note 1
−
40
150
−
−
−
µA
−
−
−
30
100
50
µA
Cd
diode capacitance VR = 1 V; f = 1 MHz 66
80
55
70
43
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jun 14
4
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
MHC673
MHC674
4
5
10
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(1)
(2)
(mA)
(µA)
3
4
10
10
(1)
(2)
(3)
2
3
10
10
2
10
10
(3)
1
10
−1
10
1
0
0
0.2
0.4
0.6
5
10
15
20
V
(V)
V
R (V)
F
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3)
Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MHC676
MHC675
4
10
140
handbook, halfpage
C
handbook, halfpage
d
(pF)
120
I
F
(mA)
3
10
100
80
(1)
(2)
(3)
2
10
60
40
20
10
1
−1
10
0
0
0
0.2
0.4
0.6
5
10
15
20
V
(V)
F
V
(V)
R
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG2010BEA/PMEG2010BEV
(3) Tamb = 25 °C.
Tamb = 25 °C; f = 1 MHz.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
Fig.6 Forward current as a function of forward
voltage; typical values.
2004 Jun 14
5
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC678
MHC677
5
10
120
d
(pF)
100
handbook, halfpage
C
I
R
(µA)
(1)
(2)
4
3
2
10
80
60
40
20
10
10
(3)
10
1
0
0
0
5
10
15
20
25
30
R (V)
5
10
15
20
V
(V)
V
R
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG3010BEA/PMEG3010BEV
(3) Tamb = 25 °C.
Tamb = 25 °C; f = 1 MHz.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
MHC679
MHC680
5
4
10
10
handbook, halfpage
handbook, halfpage
I
I
R
(µA)
F
(mA)
(1)
3
4
10
10
(1)
(2)
(3)
3
10
2
10
(2)
2
10
10
(3)
10
1
−1
1
10
0
0.2
0.4
0.6
0
10
20
30
40
V
V
(V)
R (V)
F
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.9 Forward current as a function of forward
voltage; typical values.
Fig.10 Reverse current as a function of reverse
voltage; typical values.
2004 Jun 14
6
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC681
100
handbook, halfpage
C
d
(pF)
80
60
40
20
0
0
5
10
15
20
V
(V)
R
PMEG4010BEA/PMEG4010BEV
Tamb = 25 °C; f = 1 MHz.
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
7
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
Plastic surface mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
99-09-13
03-12-17
SOD323
SC-76
2004 Jun 14
8
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2004 Jun 14
9
Philips Semiconductors
Product specification
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Jun 14
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp11
Date of release: 2004 Jun 14
Document order number: 9397 750 13234
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