PMEG2010BER,115 [NXP]
PMEG2010BER - 1 A low Vf MEGA Schottky barrier rectifier SOD-123 2-Pin;
| 型号： | PMEG2010BER,115 |
| 厂家： | 
NXP |
| 描述： | PMEG2010BER - 1 A low Vf MEGA Schottky barrier rectifier SOD-123 2-Pin 光电二极管 |
| 文件： | 总13页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEG2010BER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 16 April 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) ≤ 1 A
I Reverse voltage: VR ≤ 20 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
[1]
T
T
amb ≤ 125 °C
sp ≤ 140 °C
-
-
-
-
-
-
1
A
-
1
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
-
20
450
50
V
IF = 1 A
395
8
mV
µA
VR = 20 V
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
cathode
Simplified outline
Graphic symbol
[1]
1
2
2
anode
1
2
sym001
[1] The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PMEG2010BER
plastic surface-mounted package; 2 leads
SOD123W
4. Marking
Table 4.
Marking codes
Type number
PMEG2010BER
Marking code
B6
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
average forward current
Tj = 25 °C
-
20
V
IF(AV)
square wave;
δ = 0.5;
f = 20 kHz
[1]
[2]
T
T
amb ≤ 125 °C
sp ≤ 140 °C
-
-
-
1
A
A
A
1
IFSM
Ptot
non-repetitive peak
forward current
square wave;
tp = 8 ms
50
[3][4]
[3][5]
[3][1]
total power dissipation
T
amb ≤ 25 °C
-
-
-
0.57
0.95
1.8
W
W
W
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
2 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
220
130
70
K/W
K/W
K/W
K/W
[4]
[5]
[6]
Rth(j-sp)
thermal resistance from
junction to solder point
18
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
3 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab362
3
10
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
2
10
0.5
0.33
0.2
0.25
0.1
0.05
0.01
10
0.02
0
1
−1
10
−3
−2
−1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab363
3
10
Z
th(j-a)
duty cycle =
1
(K/W)
2
10
0.75
0.5
0.33
0.2
0.25
0.1
10
0.05
0.01
0.02
0
1
−1
10
−3
−2
−1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
4 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab364
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
10
1
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
0.01
1
0
−1
10
−3
−2
−1
2
3
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
IF = 0.1 A
IF = 0.7 A
IF = 1 A
Min
Typ
310
380
395
2
Max
340
430
450
-
Unit
mV
mV
mV
µA
VF
forward voltage
-
-
-
-
-
-
IR
reverse current
VR = 5 V
VR = 10 V
VR = 20 V
f = 1 MHz
VR = 1 V
VR = 10 V
3
-
µA
8
50
µA
Cd
diode capacitance
-
-
185
65
-
-
pF
pF
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
5 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab452
006aab453
−2
−3
−4
−5
−6
−7
−8
−9
10
10
I
R
(A)
10
I
F
(A)
(1)
(2)
1
(1)
(2)
10
10
10
10
10
10
−1
10
10
10
10
(3)
(4)
(5)
(3)
(4)
−2
−3
−4
0
0.1
0.2
0.3
0.4
0.5
0.6
(V)
0.7
0
5
10
15
20
V
V (V)
R
F
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
006aab454
350
C
d
(pF)
300
250
200
150
100
50
0
0
4
8
12
16
20
V
(V)
R
f = 1 MHz; Tamb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
6 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab455
(4)
006aab456
0.5
0.1
P
F(AV)
(W)
P
R(AV)
(W)
0.4
0.3
0.2
0.1
0.0
0.075
0.05
0.025
0
(3)
(1)
(2)
(3)
(2)
(1)
(4)
0.0
0.5
1.0
1.5
0
4
8
12
16
20
I
(A)
V (V)
R
F(AV)
Tj = 150 °C
Tj = 125 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
006aab457
006aab458
1.5
1.5
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
1.0
1.0
(3)
(4)
(3)
(4)
0.5
0.0
0.5
0.0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
amb
175
T
amb
FR4 PCB, standard footprint
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
7 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
006aab459
006aab460
1.5
1.5
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
1.0
1.0
(3)
(4)
(3)
(4)
0.5
0.0
0.5
0.0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
sp
175
T
amb
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1; DC
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
solder point temperature; typical values
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
8 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and IRMS = IM
× δ with IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7 2.8
3.3 2.4
2
1.05
0.75
0.22
0.10
Dimensions in mm
08-11-06
Fig 14. Package outline SOD123W
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
9 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
PMEG2010BER SOD123W 4 mm pitch, 8 mm tape and reel
-115
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
4.4
2.9
2.8
solder lands
solder resist
1.1 1.2
2.1 1.6
(2×) (2×)
solder paste
occupied area
1.1
(2×)
Dimensions in mm
1.2
(2×)
sod123w_fr
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOD123W
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
10 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG2010BER_1
20090416
Product data sheet
-
-
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
11 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEG2010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2009
12 of 13
PMEG2010BER
NXP Semiconductors
1 A low VF MEGA Schottky barrier rectifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 April 2009
Document identifier: PMEG2010BER_1
相关型号：
PMEG2010BEV,115
PMEGXX10BEA; PMEGXX10BEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin
NXP
PMEG2010EH,115
PMEG2010EH; PMEG2010EJ; PMEG2010ET - 1 A very low VF MEGA Schottky barrier rectifiers SOD-123 2-Pin
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