PMEG2015EV,115 [NXP]
PMEG2015EV - Low VF MEGA Schottky barrier diode SOT 6-Pin;
| 型号： | PMEG2015EV,115 |
| 厂家： | 
NXP |
| 描述： | PMEG2015EV - Low VF MEGA Schottky barrier diode SOT 6-Pin 功效 光电二极管 |
| 文件： | 总7页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2015EV
Low VF MEGA Schottky barrier
diode
Product data sheet
2003 Jun 03
Supersedes data of 2003 May 21
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
FEATURES
PINNING
• Forward current: 1.5 A
PIN
DESCRIPTION
• Reverse voltage: 20 V
1
2
3
4
5
6
cathode
• Very low forward voltage
• Ultra small plastic SMD package
cathode
anode
• Flat leads: excellent coplanarity and improved thermal
behaviour.
anode
cathode
cathode
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
• Inverse polarity protection
handbook, halfpage
6
5
4
• Low power consumption applications.
1, 2
5, 6
3, 4
DESCRIPTION
MHC310
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
1
2
3
Marking code: F5.
Fig.1 Simplified outline (SOT666 and symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
20
UNIT
VR
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
repetitive peak forward current
storage temperature
−
−
−
−
V
A
A
A
IF
Ts < 55 °C
1.5
IFSM
IFRM
Tstg
Tj
tp = 8 ms square wave; note 1
10
tp = 1 ms; δ = ≤ 0.25
4.5
−65
−
+150
150
+125
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Jun 03
2
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
see Fig.2; note 1
TYP.
MAX.
UNIT
VF
continuous forward voltage
IF = 10 mA
IF = 100 mA
IF = 1000 mA
IF = 1500 mA
see Fig.3; note 2
VR = 5 V
240
270
mV
300
480
530
350
550
660
mV
mV
mV
IR
continuous reverse current
diode capacitance
5
10
20
50
25
μA
μA
μA
pF
VR = 8 V
7
VR = 15 V
10
Cd
VR = 5 V; f = 1 MHz; see Fig.4 19
Notes
1. Only valid if pins 1, 2 and 5, 6 are soldered on 1 cm2 copper solder land.
2. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
note 2
note 3
405
215
80
K/W
K/W
K/W
Rth j-s
thermal resistance from junction to solder point
Notes
1. Refer to SOT666 standard mounting conditions.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm2.
3. Soldering point of cathode tabs.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jun 03
3
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
GRAPHICAL DATA
MLE111
MHC312
4
5
10
10
handbook, halfpage
handbook, halfpage
I
I
F
(mA)
R
(μA)
(1)
4
3
10
10
(1)
(2)
(3)
(2)
(3)
2
3
10
10
2
10
10
10
1
−1
10
1
0
0
0.2
0.4
0.6
5
10
15
20
25
V
(V)
F
V
(V)
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MHC313
80
handbook, halfpage
C
d
(pF)
60
40
20
0
0
5
10
15
20
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Jun 03
4
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2003 Jun 03
5
NXP Semiconductors
Product data sheet
Low VF MEGA Schottky barrier diode
PMEG2015EV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2003 Jun 03
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp7
Date of release: 2003 Jun 03
Document order number: 9397 750 11556
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