PMEM4020PD [NXP]
PNP transistor/Schottky-diode module; PNP晶体管/肖特基二极管模块
| 型号： | PMEM4020PD |
| 厂家： | 
NXP |
| 描述： | PNP transistor/Schottky-diode module |
| 文件： | 总11页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PMEM4020PD
PNP transistor/Schottky-diode
module
Product specification
2003 Nov 24
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
FEATURES
PINNING
• 600 mW total power dissipation
• High current capability
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
• Reduces required PCB area
• Reduced pick and place costs
• Small plastic SMD package.
not connected
cathode
anode
base
Transistor
collector
• Low collector-emitter saturation voltage.
Diode
handbook, halfpage
6
1
5
2
4
• Ultra high-speed switching
• Very low forward voltage
• Guard ring protected.
3
6
4
5
1
APPLICATIONS
3
MGU868
• DC-to-DC converters
• Inductive load drivers
Marking code: B7.
• General purpose load drivers
• Reverse polarity protection circuits.
Fig.1 Simplified outline (SOT457) and symbol.
DESCRIPTION
Combination of a PNP transistor with low VCEsat and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
NPN complement: PMEM4020ND.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT457
PMEM4020PD
−
2003 Nov 24
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−40
V
V
V
A
A
A
A
A
A
open base
open collector
note 1
−40
−5
−0.75
−1
note 2
note 3
−1.3
−2
Ts ≤ 55 °C; note 4
ICM
IBM
Ptot
peak collector current
peak base current
−3
−1
total power dissipation
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
Tamb ≤ 25 °C; note 3
295
400
500
1000
150
mW
mW
mW
mW
°C
Ts ≤ 55 °C; note 4
Tj
junction temperature
Schottky barrier diode
VR
IF
continuous reverse voltage
continuous forward current
−
−
−
20
1
V
A
A
IFSM
non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC
method
5
Ptot
total power dissipation
T
T
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
amb ≤ 25 °C; note 3
−
−
−
−
−
295
400
500
1000
150
mW
mW
mW
mW
°C
Ts ≤ 55 °C; note 4
Tj
Combined device
junction temperature
note 2
Ptot
total power dissipation
Tamb = 25 °C; note 2
−
600
mW
°C
Tstg
Tamb
storage temperature
−65
−65
+150
+150
operating ambient temperature
note 2
°C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and
cathode both 1 cm2.
3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Solder point of collector or cathode tab.
2003 Nov 24
3
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Single device
Rth(j-s)
thermal resistance from junction to
solder point
in free air; notes 1 and 2
95
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 3
in free air; notes 1 and 4
in free air; notes 1 and 5
250
315
425
K/W
K/W
K/W
Combined device
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 3
208
K/W
Notes
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF (AV) rating will be available on request.
2. Solder point of collector or cathode tab.
3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and
cathode both 1 cm2.
5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457.
2003 Nov 24
4
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
PNP transistor
ICBO
collector-base cut-off current
VCB = −40 V; IE = 0
CB = −40 V; IE = 0; Tamb = 150 °C
−
−
−100 nA
−50 µA
V
−
−
ICEO
IEBO
hFE
collector-emitter cut-off current
emitter-base cut-off current
current gain (DC)
VCE = −30 V; IB = 0
VEB = −5 V; IC = 0
−
−
−100 nA
−
−
−100 nA
VCE = −5 V; IC = −1 mA
300
300
250
160
50
−
−
−
V
V
V
V
CE = −5 V; IC = −100 mA
CE = −5 V; IC = −500 mA
CE = −5 V; IC = −1 A
−
800
−
−
−
−
CE = −5 V; IC = −2 A; note 1
−
−
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
−
−120 mV
−145 mV
−260 mV
−530 mV
−
−
IC = −1 A; IB = −100 mA
−
−
IC = −2 A; IB = −200 mA
−
−
VBEsat
RCEsat
VBEon
fT
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
IC = −1 A; IB = −50 mA
−
−
−1.1
280
−1
V
IC = −1 A; IB = −100 mA; note 1
VCE = −5 V; IC = −1 A
−
180
−
mΩ
V
−
IC = −50 mA; VCE = −10 V;
150
−
−
MHz
f = 100 MHz
Schottky barrier diode
VF continuous forward voltage
see Fig.2; note 1
IF = 10 mA
−
−
−
240
300
480
270
350
550
mV
mV
mV
IF = 100 mA
IF = 1000 mA
see Fig.3; note 1
VR = 5 V
IR
reverse current
−
−
−
−
5
10
20
50
25
µA
µA
µA
pF
VR = 8 V
7
VR = 15 V
10
19
Cd
diode capacitance
VR = 5 V; f = 1 MHz; see Fig.4
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Nov 24
5
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
GRAPHICAL DATA
MLE230
MHC312
5
3
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
I
F
(1)
(mA)
4
10
2
10
(2)
(3)
3
10
2
10
(1)
(2)
(3)
10
10
1
1
0
0
100
200
300
400
V
500
(mV)
5
10
15
20
25
V
(V)
F
R
Schottky barrier diode.
Schottky barrier diode.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(1) Tamb = 125 °C.
(2)
Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MHC313
MHC088
1200
80
handbook, halfpage
handbook, halfpage
h
FE
C
d
(pF)
1000
(1)
60
800
40
20
0
600
(2)
400
(3)
200
0
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
0
5
10
15
20
V
(V)
I
R
C
PNP transistor; VCE = −5 V.
(1) Tamb = 150 °C.
Schottky barrier diode; f = 1 MHz; Tamb = 25 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 DC current gain as a function of collector
current; typical values.
2003 Nov 24
6
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
MHC089
MHC090
3
−10
−10
handbook, halfpage
handbook, halfpage
V
V
CEsat
BE
(mV)
(V)
2
−10
−1
(1)
(1)
(2)
−10
(2)
(3)
(3)
−1
−10
−1
−1
−1
2
3
4
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−10
−10
−10
I
I
(mA)
C
C
PNP transistor; IC/IB = 10.
(1) Tamb = 150 °C.
PNP transistor; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
MHC091
MHC092
2
300
10
handbook, halfpage
handbook, halfpage
f
T
(MHz)
R
CEsat
(Ω)
250
10
200
150
100
50
1
(1)
(2)
(3)
−1
10
0
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
0
−200
−400
−600
−800
−1000
(mA)
I
I
C
C
PNP transistor; IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
PNP transistor; VCE = −10 V.
(3) Tamb = −55 °C.
Fig.8 Equivalent on-resistance as a function of
collector current; typical values.
Fig.9 Transition frequency as a function of
collector current.
2003 Nov 24
7
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
APPLICATION INFORMATION
handbook, halfpage
V
CC
handbook, halfpage
V
V
out
in
IN
CONTROLLER
MGU866
MGU867
Fig.11 Inductive load driver (relays, motors,
buzzers) with free-wheeling diode.
Fig.10 DC-to-DC converter.
2003 Nov 24
8
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2003 Nov 24
9
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Nov 24
10
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp11
Date of release: 2003 Nov 24
Document order number: 9397 750 11907
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