PMLL4148 [NXP]

High-speed diodes; 高速二极管
PMLL4148
型号: PMLL4148
厂家: NXP    NXP
描述:

High-speed diodes
高速二极管

二极管
文件: 总8页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMLL4148; PMLL4448  
High-speed diodes  
1999 May 27  
Product specification  
Supersedes data of 1996 Sep 18  
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
FEATURES  
DESCRIPTION  
Small hermetically sealed glass  
SMD package  
The PMLL4148 and PMLL4448 are high-speed switching diodes fabricated in  
planar technology, and encapsulated in small hermetically sealed glass  
SOD80C SMD packages.  
High switching speed: max. 4 ns  
Continuous reverse voltage:  
max. 75 V  
Repetitive peak reverse voltage:  
max. 75 V  
k
a
handbook, 4 columns  
Repetitive peak forward current:  
max. 450 mA.  
MAM061  
APPLICATIONS  
The marking band indicates the cathode.  
High-speed switching  
Fast logic applications.  
Fig.1 Simplified outline (SOD80C) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
75  
UNIT  
VRRM  
VR  
repetitive peak reverse voltage  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
V
V
75  
IF  
see Fig.2; note 1  
200  
450  
mA  
mA  
IFRM  
IFSM  
non-repetitive peak forward current square wave; Tj = 25 °C prior to  
surge; see Fig.4  
t = 1 µs  
t = 1 ms  
t = 1 s  
4
A
1
A
0.5  
500  
+200  
200  
A
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1  
mW  
°C  
°C  
65  
Note  
1. Device mounted on an FR4 printed-circuit board.  
1999 May 27  
2
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VF  
see Fig.3  
PMLL4148  
PMLL4448  
IF = 10 mA  
1
V
IF = 5 mA  
620  
720  
1
mV  
V
IF = 100 mA  
IR  
reverse current  
VR = 20 V; see Fig.5  
VR = 20 V; Tj = 150 °C; see Fig.5  
VR = 20 V; Tj = 100 °C; see Fig.5  
f = 1 MHz; VR = 0; see Fig.6  
25  
50  
3
nA  
µA  
µA  
pF  
ns  
IR  
reverse current; PMLL4448  
diode capacitance  
Cd  
trr  
4
reverse recovery time  
when switched from IF = 10 mA to  
IR = 60 mA; RL = 100 ;  
4
measured at IR = 1 mA; see Fig.7  
Vfr  
forward recovery voltage  
when switched from IF = 50 mA;  
2.5  
V
tr = 20 ns; see Fig.8  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
300  
UNIT  
Rth j-tp  
Rth j-a  
K/W  
K/W  
350  
Note  
1. Device mounted on an FR4 printed-circuit board.  
1999 May 27  
3
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
GRAPHICAL DATA  
MBG451  
MBG464  
300  
600  
handbook, halfpage  
handbook, halfpage  
I
I
F
F
(mA)  
(mA)  
200  
400  
(1)  
(2)  
(3)  
100  
200  
0
0
0
o
0
100  
200  
1
2
T
( C)  
V
(V)  
amb  
F
(1) Tj = 175 °C; typical values.  
(2) Tj = 25 °C; typical values.  
(3) Tj = 25 °C; maximum values.  
Device mounted on an FR4 printed-circuit board.  
Fig.2 Maximum permissible continuous forward  
current as a function of ambient  
temperature.  
Fig.3 Forward current as a function of forward  
voltage.  
MBG704  
2
10  
I
FSM  
(A)  
10  
1
1  
10  
2
3
4
1
10  
10  
10  
10  
t
(µs)  
p
Based on square wave currents.  
Tj = 25 °C prior to surge.  
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.  
1999 May 27  
4
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
MGD006  
MGD004  
3
10  
1.2  
handbook, halfpage  
handbook, halfpage  
I
R
C
d
(µA)  
(pF)  
1.0  
2
10  
(1)  
(2)  
(3)  
10  
0.8  
0.6  
1
1  
10  
2  
10  
0.4  
0
0
100  
200  
o
10  
20  
T ( C)  
V
(V)  
j
R
(1) VR = 75 V; maximum values.  
(2) VR = 75 V; typical values.  
(3)  
VR = 20 V; typical values.  
f = 1 MHz; Tj = 25 °C.  
Fig.5 Reverse current as a function of junction  
temperature.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
1999 May 27  
5
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
t
t
p
r
t
D.U.T.  
10%  
I
F
I
t
R
= 50  
F
rr  
S
SAMPLING  
t
OSCILLOSCOPE  
R = 50 Ω  
V = V  
I x R  
F S  
R
i
(1)  
90%  
V
R
MGA881  
input signal  
output signal  
(1) IR = 1 mA.  
Fig.7 Reverse recovery voltage test circuit and waveforms.  
I
1 kΩ  
450 Ω  
I
V
90%  
R
= 50 Ω  
S
OSCILLOSCOPE  
V
fr  
D.U.T.  
R = 50 Ω  
i
10%  
MGA882  
t
t
t
t
p
r
input  
signal  
output  
signal  
Fig.8 Forward recovery voltage test circuit and waveforms.  
6
1999 May 27  
Philips Semiconductors  
Product specification  
High-speed diodes  
PMLL4148; PMLL4448  
PACKAGE OUTLINE  
Hermetically sealed glass surface mounted package; 2 connectors  
SOD80C  
k
a
(1)  
D
L
L
H
DIMENSIONS (mm are the original dimensions)  
0
1
2 mm  
L
D
H
UNIT  
scale  
1.60  
1.45  
3.7  
3.3  
mm  
0.3  
Note  
1. The marking band indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-06-20  
SOD80C  
100H01  
DEFINITIONS  
Data Sheet Status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Preliminary specification  
Product specification  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 May 27  
7
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Slovenia: see Italy  
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Hungary: see Austria  
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Middle East: see Italy  
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For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA65  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/03/pp8  
Date of release: 1999 May 27  
Document order number: 9397 750 05889  

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