PMR280UN,115 [NXP]
PMR280UN - N-channel TrenchMOS ultra low level FET SC-75 3-Pin;
| 型号： | PMR280UN,115 |
| 厂家： | 
NXP |
| 描述： | PMR280UN - N-channel TrenchMOS ultra low level FET SC-75 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMR280UN
T416
SO
N-channel TrenchMOS ultra low level FET
Rev. 2 — 3 February 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in ultra small
Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
1.2 Features and benefits
Surface mounted package
Low on-state resistance
Footprint 63% smaller than SOT23
Low threshold voltage
1.3 Applications
Driver circuits
Switching in portable appliances
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
20
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 150 °C
Tsp = 25 °C; VGS = 4.5 V
-
-
-
-
ID
-
0.98
8
A
VGS
gate-source voltage
-8
V
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C
-
280
340
mΩ
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
D
3
2
source
drain
3
G
1
2
S
SOT416 (SC-75)
017aaa253
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMR280UN
SC-75
plastic surface-mounted package; 3 leads
SOT416
4. Marking
Table 4.
Marking codes
Type number
PMR280UN
Marking code
R5
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 150 °C
Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ
-
VDGR
VGS
-
20
V
-8
8
V
ID
Tsp = 25 °C; VGS = 4.5 V
Tsp = 100 °C; VGS = 4.5 V
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Tsp = 25 °C
-
0.98
0.62
1.97
0.53
150
150
A
-
A
IDM
Ptot
Tstg
Tj
peak drain current
-
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
-55
-55
Source-drain diode
IS
source current
peak source current
Tsp = 25 °C
-
-
0.44
0.88
A
A
ISM
Tsp = 25 °C; pulsed; tp ≤ 10 µs
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
2 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
03aa25
03aa17
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
sp
sp
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
03an10
10
I
D
Limit R
= V
/ I
DS D
(A)
DSon
t
p
= 10
s
μ
1
100
s
μ
1 ms
10 ms
-1
DC
10
100 ms
-2
10
-1
10
2
10
1
10
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
3 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to solder
point
-
-
235
K/W
03an29
3
10
Z
th(j-sp)
(K/W)
= 0.5
δ
2
10
0.2
0.1
t
p
P
δ =
T
0.05
0.02
t
t
p
T
single pulse
10
-4
-3
10
-2
-1
10
10
10
1
10
t
p
(s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
4 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 1 µA; VGS = 0 V; Tj = 25 °C
ID = 1 µA; VGS = 0 V; Tj = -55 °C
20
-
-
V
18
-
-
V
VGS(th)
gate-source threshold ID = 0.25 mA; VDS = VGS; Tj = 25 °C
0.45
0.7
-
1
V
voltage
ID = 0.25 mA; VDS = VGS; Tj = 150 °C
0.25
-
V
ID = 0.25 mA; VDS = VGS; Tj = -55 °C
-
-
-
-
-
-
-
-
-
-
1.2
1
V
IDSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C
VGS = 4.5 V; ID = 0.2 A; Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; Tj = 25 °C
VGS = 1.8 V; ID = 0.075 A; Tj = 25 °C
-
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
-
100
100
100
340
544
430
660
IGSS
10
10
280
448
360
460
RDSon
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 1 A; VDS = 10 V; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.89
0.13
0.18
45
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C
Coss
Crss
11
reverse transfer
capacitance
7
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; RL = 10 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4.5
10
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
18.5
5
Source-drain diode
VSD
source-drain voltage
IS = 0.3 A; VGS = 0 V; Tj = 25 °C
-
0.83
1.2
V
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
5 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
03an02
03an04
2.5
2.5
4.5
3
2.5
I
I
D
D
(A)
(A)
2
2
T = 150 °C
j
25 °C
2
1.5
1
1.5
1
1.8
V
(V) = 1.5
GS
0.5
0
0.5
0
0
0.5
1
1.5
2
0
1
2
3
4
V
(V)
V
(V)
GS
DS
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03an03
03af18
1
2
V
(V) = 1.8
2
GS
R
DSon
a
(Ω)
0.8
0.6
0.4
0.2
0
1.5
2.5
1
0.5
0
3
4.5
-60
0
60
120
180
0
0.5
1
1.5
2
2.5
Tj (°C)
I
(A)
D
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
6 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
03aj65
03am43
−3
−4
−5
−6
1.2
10
V
GS(th)
(V)
I
D
(A)
0.9
0.6
0.3
0
max
typ
10
10
10
min
typ
max
min
−60
0
60
120
180
0
0.4
0.8
1.2
T (°C)
V
(V)
GS
j
ID = 0.25 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03an06
03an05
2
10
1
VGS = 0 V
IS
(A)
C
iss
0.8
C
(pF)
0.6
0.4
0.2
0
C
C
oss
10
rss
150 °C
Tj = 25 °C
1
10
−1
2
0
0.5
1
1.5
1
10
10
V
SD (V)
V
(V)
DS
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 12. Source current as a function of source-drain
voltage; typical values
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
7 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
03an07
5
4
3
2
1
0
I
= 1 A
D
V
GS
T = 25 °C
V
j
(V)
= 10 V
DS
0
0.2
0.4
0.6
0.8
Q
1
(nC)
G
Fig 13. Gate-source voltage as a function of gate charge; typical values
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
8 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
8. Package outline
1.8
1.4
0.95
0.60
3
0.45
0.15
1.75 0.9
1.45 0.7
1
2
0.30
0.15
0.25
0.10
1
Dimensions in mm
04-11-04
Fig 14. Package outline SOT416 (SC-75)
9. Soldering
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
occupied area
0.5
(3×)
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Fig 15. Reflow soldering footprint for SOT416 (SC-75)
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
9 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
10. Revision history
Table 8.
Revision history
Document ID
PMR280UN v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20120203
Product data sheet
-
PMR280UN v.1
• The format of this document has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
PMR280UN v.1
20040305
Product data sheet
-
-
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
10 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
11. Legal information
11.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
11.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
11 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMR280UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 February 2012
12 of 13
PMR280UN
NXP Semiconductors
N-channel TrenchMOS ultra low level FET
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .1
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11.1
11.2
11.3
11.4
12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 February 2012
Document identifier: PMR280UN
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SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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