PMZ350UPE [NXP]

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal;


型号：	PMZ350UPE
厂家：	NXP
描述：	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal 开关晶体管
文件：	总14页 (文件大小：204K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PMZ350UPE

20 V, P-channel Trench MOSFET

14 May 2014

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

Trench MOSFET technology

Low threshold voltage

Very fast switching

ElectroStatic Discharge (ESD) protection > 1.8 kV HBM

Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm

•

3. Applications

Relay driver

•

High-speed line driver

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -0.3 A; T_j= 25 °C

[1]

-1.4

Static characteristics

R_DSondrain-source on-state

resistance

330

450

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm².

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NXP Semiconductors

PMZ350UPE

20 V, P-channel Trench MOSFET

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

source

drain

Transparent

top view

DFN1006-3 (SOT883)

017aaa259

6. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMZ350UPE

DFN1006-3

DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883

7. Marking

Table 4.

Marking codes

Type number

Marking code

PMZ350UPE

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Product data sheet

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PMZ350UPE

20 V, P-channel Trench MOSFET

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; T_amb= 25 °C

V_GS= -4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

-1.4

-1

-0.7

-2.8

360

715

I_DM

P_tot

peak drain current

total power dissipation

[2]

[1]

T_sp= 25 °C

3125 mW

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

°C

T_amb

T_stg

Source-drain diode

I_S

source current

T_amb= 25 °C

[1]

[3]

-0.8

ESD maximum rating

V_ESD

electrostatic discharge voltage HBM

1800

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm².

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Measured between all pins.

PMZ350UPE

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Product data sheet

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NXP Semiconductors

PMZ350UPE

20 V, P-channel Trench MOSFET

017aaa123

017aaa124

120

der

(%)

der

(%)

- 75

- 25

125

175

- 25

125

175

T (°C)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Fig. 2. Normalized continuous drain current as a

function of junction temperature

017aaa715

-10

Limit R

= V /I

DSon

(A)

-1

= 1 ms

= 10 ms

-10

DC; T = 25 °C

= 100 ms

DC; T

= 25 °C;

amb

drain mounting pad 1 cm

-2

-10

-1

-10

(V)

I_DM= single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

304

150

Max

350

175

103

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

[3]

PMZ350UPE

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PMZ350UPE

20 V, P-channel Trench MOSFET

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm², t ≤ 5 s.

[3]

017aaa109

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.25

0.2

0.05

0.1

0.02

0.01

- 3

- 2

- 1

(s)

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa110

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

- 3

- 2

- 1

(s)

FR4 PCB, mounting pad for drain 1 cm²

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMZ350UPE

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PMZ350UPE

20 V, P-channel Trench MOSFET

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

I_D= -250 µA; V_GS= 0 V; T_j= 25 °C

-20

V_GSth

gate-source threshold I_D= -250 µA; V_DS= V_GS; T_j= 25 °C

voltage

-0.45 -0.7

-0.95

I_DSS

drain leakage current

V_DS= -20 V; V_GS= 0 V; T_j= 25 °C

V_DS= -20 V; V_GS= 0 V; T_j= 150 °C

V_GS= -8 V; V_DS= 0 V; T_j= 25 °C

V_GS= 8 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; I_D= -0.3 A; T_j= 25 °C

V_GS= -4.5 V; I_D= -0.3 A; T_j= 150 °C

V_GS= -2.5 V; I_D= -0.2 A; T_j= 25 °C

V_GS= -1.8 V; I_D= -0.1 A; T_j= 25 °C

V_DS= -10 V; I_D= -0.3 A; T_j= 25 °C

-1

µA

mΩ

-10

I_GSS

gate leakage current

R_DSon

drain-source on-state

resistance

330

478

420

520

1.4

450

645

940

g_fs

forward

transconductance

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

V_DS= -10 V; I_D= -0.3 A; V_GS= -4.5 V;

T_j= 25 °C

1.3

0.2

0.25

127

1.9

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= -10 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= -10 V; I_D= -0.3 A; V_GS= -4.5 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

Source-drain diode

V_SD

source-drain voltage

I_S= -0.1 A; V_GS= 0 V; T_j= 25 °C

-0.7

-1.2

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Product data sheet

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PMZ350UPE

20 V, P-channel Trench MOSFET

017aaa716

017aaa143

- 3

- 4

- 5

- 6

-3

-10

-8 V

-3 V

-4.5 V

-2.5 V

= -2.2 V

(A)

-2

-10

-1.8 V

-1.4 V

(1)

(2)

(3)

-1

-10

-1

-2

-3

-4

-0.2

-0.4

-0.6

-0.8

-1.0

(V)

T_j= 25 °C

T_j= 25 °C; V_DS= -3 V

(1) minimum values

(2) typical values

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

017aaa717

017aaa718

1200

-1.4 V

-1.8 V

-2.2 V

DSon

(mΩ)

DSon

(mΩ)

800

-2.5 V

-3 V

T = 150 °C

-4.5 V

400

-8 V

T = 25 °C

-1

-2

-3

-2

-4

-6

(A)

(V)

T_j= 25 °C

Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values of gate-source voltage; typical values

I_D= -0.2 A

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PMZ350UPE

20 V, P-channel Trench MOSFET

017aaa719

017aaa720

-3

1.50

(A)

1.25

1.00

0.75

0.50

-2

-1

T = 25 °C

T = 150 °C

-1

-2

-3

-60

120

180

(V)

T (°C)

V_DS> I_D× R_DSon

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

017aaa721

017aaa722

-1.2

GS(th)

(V)

(pF)

max

typ

-0.8

-0.4

iss

min

oss

rss

-60

120

180

-1

-10

T (°C)

(V)

I_D= -0.25 mA; V_DS= V_GS

f = 1 MHz; V_GS= 0 V

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

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PMZ350UPE

20 V, P-channel Trench MOSFET

017aaa723

-5

(V)

-4

-3

-2

-1

GS(pl)

GS(th)

GS1

GS2

G(tot)

017aaa137

Fig. 15. Gate charge waveform definitions

0.5

1.0

1.5

(nC)

I_D= −0.3 A; V_DS= −10 V; T_amb= 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa724

-3

(A)

-2

-1

T = 150 °C

T = 25 °C

-0.5

-1.0

-1.5

(V)

V_GS= 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

duty cycle δ =

006aaa812

Fig. 17. Duty cycle definition

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20 V, P-channel Trench MOSFET

12. Package outline

0.62

0.55

0.50

0.46

0.55

0.47

0.30

0.22

1.02

0.95

0.65

0.30

0.22

0.20

0.12

0.35

Dimensions in mm

03-04-03

Fig. 18. Package outline DFN1006-3 (SOT883)

13. Soldering

1.3

0.7

R0.05 (12×)

solder lands

solder resist

0.9

0.7

0.6

solder paste

0.25

(2×)

occupied area

0.3

(2×)

0.3

0.4

Dimensions in mm

0.4

(2×)

sot883_fr

Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)

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PMZ350UPE

20 V, P-channel Trench MOSFET

14. Revision history

Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PMZ350UPE v.1

20140514

Product data sheet

PMZ350UPE

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Product data sheet

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NXP Semiconductors

PMZ350UPE

20 V, P-channel Trench MOSFET

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

15. Legal information

15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

15.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

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PMZ350UPE

20 V, P-channel Trench MOSFET

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

NXP Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without NXP Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-

CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,

MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,

TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

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PMZ350UPE

20 V, P-channel Trench MOSFET

16. Contents

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................4

Characteristics .......................................................6

Test information .....................................................9

Package outline ................................................... 10

Soldering .............................................................. 10

Revision history ...................................................11

Legal information .................................................12

Data sheet status ............................................... 12

Definitions ...........................................................12

Disclaimers .........................................................12

Trademarks ........................................................ 13

15.1

15.2

15.3

15.4

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 May 2014

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PMZ350UPE [NXP]

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