PMZ350XN [NXP]
N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
| 型号： | PMZ350XN |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS standard level FET |
| 文件： | 总13页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMZ350XN
N-channel TrenchMOS standard level FET
Rev. 01 — 21 February 2008
Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I fast switching
I Low on-state resistance
I Leadless package
1.3 Applications
I Driver circuits
I Load switching in portable appliances
I DC-to-DC converters
1.4 Quick reference data
I VDS ≤ 30 V
I ID ≤ 1.87 A
I RDSon ≤ 420 mΩ
I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pinning
Pin
1
Description
gate (G)
Simplified outline
Symbol
D
1
2
2
source (S)
drain (D)
3
3
G
Transparent
top view
mbb076
S
SOT833 (SC-101)
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
PMZ350XN
SC-101
leadless ultra small plastic package; 3 solder lands;
SOT883
body 1.0 × 0.6 × 0.5 mm
4. Limiting values
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
30
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
drain-gate voltage (DC)
gate-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
30
V
-
-
±12
1.87
1.18
3.74
2.50
+150
+150
V
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
-
A
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
A
total power dissipation
storage temperature
junction temperature
Tmb = 25 °C; see Figure 1
-
W
°C
°C
-
-
−55
−55
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
1.87
3.74
A
A
ISM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Electrostatic discharge
Vesd
electrostatic discharge voltage
human body model; C = 100 pF;
R = 1.5 kΩ (all pins)
-
-
65
35
V
V
machine model; C = 200 pF (all pins)
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
2 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aac031
003aac033
120
120
P
der
I
der
(%)
( %)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
sp
sp
Ptot
ID
Pder
=
× 100 %
Ider
=
× 100 %
-----------------------
-------------------
Ptot(25°C)
ID(25°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aac203
2
10
I
D
(A)
Limit R
= V / I
DS D
DSon
10
t
= 10 µs
p
100 µs
1
1 ms
DC
10 ms
100 ms
−1
10
−2
10
−1
2
10
1
10
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
3 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
Conditions
see Figure 4
-
Min
Typ
-
Max
50
-
Unit
K/W
K/W
Rth(j-sp) thermal resistance from junction to solder point
-
-
[1]
Rth(j-a)
thermal resistance from junction to ambient
670
[1] Mounted on a printed-circuit board; vertical in still air.
003aab831
102
Zth(j-sp)
(K/W)
δ = 0.5
0.2
10
0.1
tp
T
0.05
P
δ =
0.02
single pulse
t
tp
T
1
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
4 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 10 µA; VGS = 0 V
Tj = 25 °C
30
27
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
0.5
0.35
-
1
-
1.5
-
V
V
V
Tj = 150 °C
Tj = −55 °C
-
1.8
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V
Tj = 25 °C
-
-
-
-
1
µA
µA
nA
Tj = 150 °C
-
100
100
IGSS
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
10
RDSon
drain-source on-state
resistance
-
-
-
350
595
520
420
714
650
mΩ
mΩ
mΩ
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
Dynamic characteristics
QG(tot)
QGS
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 1 A; VDS = 15 V; VGS = 4.5 V;
see Figure 11 and 12
-
-
-
-
-
-
-
-
-
-
-
0.65
0.14
0.18
2.45
37
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
V
-
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
pF
pF
pF
ns
ns
ns
ns
8.6
5.4
VDS = 15 V; RL = 15 Ω; VGS = 4.5 V; RG = 6 Ω
6.5
9.5
td(off)
tf
turn-off delay time
fall time
14
5.5
Source-drain diode
VSD
source-drain voltage
IS = 0.3 A; VGS = 0 V; see Figure 13
-
0.78 1.2
V
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
5 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03ao00
03ao01
2.5
1
V
(V) = 2.5
3
V
(V) = 4.5
3.5
GS
GS
I
R
Dson
D
(A)
(Ω)
2
0.8
3
3.5
4.5
1.5
1
0.6
0.4
0.2
0
2.5
2
0.5
0
1.8
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
V
(V)
I (A)
D
DS
Tj = 25 °C
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03al00
03ao02
1.8
2.5
I
D
(X)
a
25 °C
Tj = 150 °C
2
1.2
1.5
1
0.6
0.5
0
0
−60
0
60
120
180
0
1
2
3
4
5
T (°C)
j
V
GS
(V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
RDSon
a =
-----------------------------
RDSon(25°C)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
6 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03al82
03an65
−3
−4
−5
−6
2
10
V
GS (th)
(V)
I
D
(A)
1.5
max
typ
10
10
10
1
min
typ
max
min
0.5
0
−60
0
60
120
180
0
0.4
0.8
1.2
1.6
T (°C)
V
(V)
j
GS
ID = 0.25 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03ao05
5
V
(V)
GS
I
= 1 A
D
T = 25 °C
j
4
3
2
1
0
VDS = 15 V
V
DS
I
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
0
0.2
0.4
0.6
0.8
Q
(nC)
G
003aaa508
ID = 1 A; VDS = 15 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
7 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03ao03
03ao04
2
1
10
V
= 0 V
GS
I
S
(A)
0.8
C
C
iss
(pF)
0.6
0.4
0.2
0
10
C
C
oss
rss
150 °C
T = 25 °C
j
1
10
−1
2
0
0.2
0.4
0.6
0.8
1
1
10
10
V
(V)
V
(V)
DS
SD
Tj = 25 °C and 150 °C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
8 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
Fig 15. Package outline SOT883 (SC-101)
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
9 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
1.30
0.30
R = 0.05 (12×)
R = 0.05 (12×)
0.35
(2×)
solder lands
solder resist
occupied area
solder paste
0.90 0.20
0.60 0.70 0.80
0.25
(2×)
0.30
(2×)
0.30
0.40
0.50
0.40
(2×)
0.50
(2×)
mbl873
Dimensions in mm
Fig 16. Reflow soldering footprint for SOT883
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
10 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZ350XN_1
20080221
Product data sheet
-
-
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
11 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PMZ350XN_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 21 February 2008
12 of 13
PMZ350XN
NXP Semiconductors
N-channel TrenchMOS standard level FET
12. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
8
9
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
10.1
10.2
10.3
10.4
11
12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 February 2008
Document identifier: PMZ350XN_1
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