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PRTR5V0U2F,115 [NXP]

PRTR5V0U2F; PRTR5V0U2K - Ultra low capacitance double rail-to-rail ESD protection SON 6-Pin;
PRTR5V0U2F,115
型号： PRTR5V0U2F,115
厂家： NXP    NXP
描述：

PRTR5V0U2F; PRTR5V0U2K - Ultra low capacitance double rail-to-rail ESD protection SON 6-Pin

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PRTR5V0U2F; PRTR5V0U2K  
Ultra low capacitance double rail-to-rail ESD protection  
Rev. 02 — 19 February 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices  
in leadless ultra small Surface-Mounted Device (SMD) plastic packages.  
The devices are designed to protect two Hi-Speed data lines or high-frequency signal  
lines from the damage caused by ESD and other transients.  
PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail  
ESD protection channels and one additional ESD protection diode each to ensure  
signal line protection even if no supply voltage is available.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEDEC  
MO-252  
-
PRTR5V0U2F  
PRTR5V0U2K  
SOT886  
SOT891  
leadless ultra small  
leadless ultra small  
1.2 Features  
I ESD protection of two Hi-Speed data lines or high-frequency signal lines  
I Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF  
I ESD protection up to 8 kV  
I IEC 61000-4-2, level 4 (ESD)  
I Very low clamping voltage due to an integrated additional ESD protection diode  
I Very low reverse current  
I AEC-Q101 qualified  
I Leadless ultra small SMD plastic packages  
1.3 Applications  
I USB 2.0 interfaces  
I Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces  
I Mobile and cordless phones  
I Personal Digital Assistants (PDA)  
I Digital cameras  
I Wide Area Network (WAN) / Local Area Network (LAN) systems  
I PCs, notebooks, printers and other PC peripherals  
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Per channel  
C(I/O-GND)  
[1]  
[2]  
input/output to ground  
capacitance  
f = 1 MHz;  
-
-
1.0  
0.6  
1.5  
-
pF  
pF  
V(I/O-GND) = 0 V  
C(I/O-I/O)  
input/output to input/output f = 1 MHz;  
capacitance  
V(I/O-I/O) = 0 V  
Zener diode  
VRWM  
[3]  
[3]  
reverse standoff voltage  
-
-
-
5.5  
-
V
Csup  
supply pin to ground  
capacitance  
f = 1 MHz;  
16  
pF  
VCC = 0 V  
[1] Measured from pin 1, 3, 4 or 6 to ground.  
[2] Measured from pin 1 or 6 to pin 3 or 4.  
[3] Measured from pin 5 to ground.  
2. Pinning information  
Table 3.  
Pin Symbol  
PRTR5V0U2F (SOT886)  
Pinning  
Description  
Simplified outline  
Graphic symbol  
1
2
3
4
5
6
I/O1  
GND  
I/O2  
I/O2  
VCC  
I/O1  
input/output 1  
ground  
1
2
3
6
5
4
1
2
input/output 2  
input/output 2  
supply voltage  
input/output 1  
6
5
4
bottom view  
3
006aab349  
PRTR5V0U2K (SOT891)  
1
2
3
4
5
6
I/O1  
GND  
I/O2  
I/O2  
VCC  
I/O1  
input/output 1  
ground  
1
6
2
5
3
4
6
5
4
1
2
input/output 2  
input/output 2  
supply voltage  
input/output 1  
bottom view  
3
006aab349  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
2 of 12  
 
 
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PRTR5V0U2F  
PRTR5V0U2K  
XSON6  
plastic extremely thin small outline package;  
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm  
SOT886  
XSON6  
plastic extremely thin small outline package;  
SOT891  
no leads; 6 terminals; body 1 × 1 × 0.5 mm  
4. Marking  
Table 5.  
Marking codes  
Type number  
PRTR5V0U2F  
PRTR5V0U2K  
Marking code  
PF  
PK  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per device  
Tamb  
Parameter  
Conditions  
Min  
Max  
Unit  
ambient temperature  
storage temperature  
−40  
−55  
+85  
°C  
°C  
Tstg  
+125  
Table 7.  
ESD maximum ratings  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Max Unit  
Per channel  
[1][2]  
VESD  
electrostatic discharge voltage  
IEC 61000-4-2  
(contact discharge)  
-
-
8
kV  
kV  
[2]  
MIL-STD-883 (human  
body model)  
10  
[1] Device stressed with ten non-repetitive ESD pulses.  
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5.  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
3 of 12  
 
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
Table 8.  
ESD standards compliance  
Standard  
Conditions  
Per channel  
IEC 61000-4-2; level 4 (ESD)  
MIL-STD-883; class 3 (human body model)  
> 8 kV (contact)  
> 4 kV  
001aaa631  
I
PP  
100 %  
90 %  
10 %  
t
t = 0.7 ns to 1 ns  
r
30 ns  
60 ns  
Fig 1. ESD pulse waveform according to IEC 61000-4-2  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
4 of 12  
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
6. Characteristics  
Table 9.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Per channel  
IR  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
[1]  
reverse current  
VR = 5 V  
-
-
< 1  
1.0  
100  
1.5  
nA  
pF  
C(I/O-GND)  
input/output to ground  
capacitance  
f = 1 MHz;  
V(I/O-GND) = 0 V  
[2]  
[3]  
C(I/O-I/O)  
input/output to input/output f = 1 MHz;  
-
-
0.6  
0.7  
-
-
pF  
V
capacitance  
V(I/O-I/O) = 0 V  
VF  
forward voltage  
IF = 1 mA  
Zener diode  
VRWM  
VBR  
[4]  
[4]  
[4]  
reverse standoff voltage  
breakdown voltage  
-
-
5.5  
9
V
6
-
-
V
Csup  
supply pin to ground  
capacitance  
f = 1 MHz;  
16  
-
pF  
VCC = 0 V  
[1] Measured from pin 1, 3, 4 or 6 to ground.  
[2] Measured from pin 1 or 6 to pin 3 or 4.  
[3] Measured from pin 1, 3, 4 or 6 to pin 5.  
[4] Measured from pin 5 to ground.  
006aaa483  
006aaa484  
2.0  
1.0  
C
C
(I/O-I/O)  
(I/O-GND)  
(pF)  
(pF)  
1.6  
1.2  
0.8  
0.4  
0
0.8  
0.6  
0.4  
0.2  
0
0
1
2
3
4
5
(V)  
0
1
2
3
4
5
(V)  
V
V
(I/O-I/O)  
(I/O-GND)  
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 2. Input/output to ground capacitance as a  
function of input/output to ground voltage;  
typical values  
Fig 3. Input/output to ground capacitance as a  
function of input/output to input/output  
voltage; typical values  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
5 of 12  
 
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
ESD TESTER  
4 GHz DIGITAL  
OSCILLOSCOPE  
RG 223/U  
50 Ω coax  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
50 Ω  
Z
DUT  
Device  
Under  
Test  
IEC 61000-4-2 network  
= 150 pF; R = 330 Ω  
C
Z
Z
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
vertical scale = 10 V/div  
horizontal scale = 50 ns/div  
GND  
GND  
unclamped +1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
clamped +1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
vertical scale = 10 V/div  
horizontal scale = 50 ns/div  
GND  
GND  
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
unclamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
clamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
006aab112  
Fig 4. ESD clamping test setup and waveforms  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
6 of 12  
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
7. Application information  
Handling data rates up to 480 Mbit/s, USB 2.0 interfaces require ESD protection devices  
with an extremely low line capacitance in order to avoid signal distortion.  
With a capacitance of only 1 pF, the PRTR5V0U2F and the PRTR5V0U2K offer  
IEC 61000-4-2, level 4 compliant ESD protection.  
PRTR5V0U2F and PRTR5V0U2K integrate two pairs of ultra low capacitance rail-to-rail  
ESD protection channels and one additional ESD protection diode each.  
The additional ESD protection diode connected between ground and VCC prevents  
charging of the supply.  
USB controller  
common mode  
protected IC/device  
V
BUS  
choke  
D+  
D+  
D−  
D−  
GND  
V
BUS  
006aaa485  
Fig 5. Application diagram: USB 2.0  
Circuit board layout and protection device placement  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the PRTR5V0U2F and the PRTR5V0U2K as close to the input terminal or  
connector as possible.  
2. The path length between the PRTR5V0U2F or the PRTR5V0U2K and the protected  
line should be minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground  
vias.  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
7 of 12  
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
8. Package outline  
1.05  
0.95  
0.50  
max  
1.05  
0.95  
0.5  
max  
0.04  
max  
0.04  
max  
0.6  
0.55  
0.25  
0.17  
3
2
1
4
5
6
3
2
1
4
5
6
0.5  
0.5  
0.35  
0.35  
0.20  
0.12  
1.5  
1.4  
1.05  
0.95  
0.40  
0.32  
0.35  
0.27  
0.40  
0.32  
0.35  
0.27  
Dimensions in mm  
04-07-22  
Dimensions in mm  
07-05-15  
Fig 6. Package outline PRTR5V0U2F (SOT886)  
Fig 7. Package outline PRTR5V0U2K (SOT891)  
9. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package Description  
Packing quantity  
5000  
-115  
-132  
-132  
[2]  
[3]  
PRTR5V0U2F SOT886 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T4  
PRTR5V0U2K SOT891 4 mm pitch, 8 mm tape and reel  
[1] For further information and the availability of packing methods, see Section 13.  
[2] T1: normal taping  
[3] T4: 90° rotated reverse taping  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
8 of 12  
 
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
10. Soldering  
1.250  
0.675  
0.370  
(6×)  
0.500  
1.700  
0.500  
solder resist  
solder paste = solderland  
occupied area  
0.270  
(6×)  
Dimensions in mm  
0.325  
0.425  
(6×)  
(6×)  
sot886_fr  
Reflow soldering is the only recommended soldering method.  
Fig 8. Reflow soldering footprint PRTR5V0U2F (SOT886)  
1.05  
0.5  
0.6  
(6×) (6×)  
solder resist  
solder land plus  
solder paste  
0.7  
1.4  
occupied area  
Dimensions in mm  
0.15  
(6×)  
0.35  
0.25  
(6×)  
sot891_fr  
Reflow soldering is the only recommended soldering method.  
Fig 9. Reflow soldering footprint PRTR5V0U2K (SOT891)  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
9 of 12  
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date Data sheet status Change notice Supersedes  
PRTR5V0U2F_PRTR5V0U2K_2 20090219  
Product data sheet  
-
PRTR5V0U2F_PRTR5V0U2K_1  
Modifications: • Table 3 “Pinning”: graphic symbol amended  
PRTR5V0U2F_PRTR5V0U2K_1 20081106  
Product data sheet  
-
-
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
10 of 12  
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Applications — Applications that are described herein for any of these  
12.2 Definitions  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
ESD protection devices — These products are only intended for protection  
against ElectroStatic Discharge (ESD) pulses and are not intended for any  
other usage including, without limitation, voltage regulation applications. NXP  
Semiconductors accepts no liability for use in such applications and therefore  
such use is at the customer’s own risk.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PRTR5V0U2F_PRTR5V0U2K_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 19 February 2009  
11 of 12  
 
 
 
 
 
 
PRTR5V0U2F; PRTR5V0U2K  
NXP Semiconductors  
Ultra low capacitance double rail-to-rail ESD protection  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Application information. . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Packing information. . . . . . . . . . . . . . . . . . . . . . 8  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 19 February 2009  
Document identifier: PRTR5V0U2F_PRTR5V0U2K_2  
 

相关型号：

PRTR5V0U2F/T1

 DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, MO-252, 1.45 X 1 MM, 0.50 MM, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-6, Transient Suppressor
NXP

PRTR5V0U2F/T4

 DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, MO-252, 1.45 X 1 MM, 0.50 MM, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-6, Transient Suppressor
NXP

PRTR5V0U2F_09

 Ultra low capacitance double rail-to-rail ESD protection
NXP

PRTR5V0U2K

 Ultra low capacitance double rail-to-rail ESD protection
NXP

PRTR5V0U2K,132

 PRTR5V0U2F; PRTR5V0U2K - Ultra low capacitance double rail-to-rail ESD protection SON 6-Pin
NXP

PRTR5V0U2X

 Ultra low capacitance double rail-to-rail ESD protection diode
NXP

PRTR5V0U2X

 Ultra low capacitance double rail-to-rail ESD protection diodeProduction
NEXPERIA

PRTR5V0U2X,215

 PRTR5V0U2X - Ultra low capacitance double rail-to-rail ESD protection diode SOT-143 4-Pin
NXP

PRTR5V0U2X-Q

 Ultra low capacitance double rail-to-rail ESD protection diodeProduction
NEXPERIA

PRTR5V0U2XT/R

 TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,5.5V V(RWM),SOT-143
NXP

PRTR5V0U4AD

 Integrated quad ultra-low capacitance ESD protection
NXP

PRTR5V0U4ADT/R

 TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,SOT-457
NXP
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