PSMN035-150B/T3 [NXP]
TRANSISTOR 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power;
| 型号： | PSMN035-150B/T3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN035-150B;
PSMN035-150P
N-channel enhancement mode field-effect transistor
Rev. 04 — 22 February 2001
Product specification
1. Description
SiliconMAX™1 products use the latest TrenchMOS™2 technology to achieve the
lowest possible on-state resistance for each package.
Product availability:
PSMN035-150P in SOT78 (TO-220AB)
PSMN035-150B in SOT404 (D2-PAK).
2. Features
■ Fast switching
■ Very low on-state resistance.
3. Applications
■ Switched mode power supplies.
4. Pinning information
c
c
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
mb
[1]
2
drain (d)
d
s
3
source (s)
mb
mounting base;
connected to
drain (d)
g
2
MBB076
1
3
MBK116
MBK106
1
2 3
SOT78 (TO-220AB)
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. SiliconMAX is a trademark of Royal Philips Electronics.
2. TrenchMOS is a trademark of Royal Philips Electronics.
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
150
50
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
−
A
Ptot
Tj
total power dissipation
junction temperature
−
250
175
35
W
−
°C
mΩ
RDSon
drain-source on-state resistance
Tj = 25 °C; VGS = 10 V; ID = 25 A
30
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
−
Max
150
150
±20
50
Unit
V
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
Tj = 25 to 175 °C
VDGR
VGS
Tj = 25 to 175 °C; RGS = 20 kΩ
−
V
−
V
ID
Tmb = 25 °C; Figure 2 and 3
Tmb = 100 °C; Figure 2 and 3
−
A
−
36
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
−
200
A
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; Figure 1
−
250
W
−55
−55
+175
+175
°C
°C
operating junction temperature
Source-drain diode
IS
source (diode forward) current
(DC)
Tmb = 25 °C
−
−
50
A
A
ISM
peak source (diode forward)
current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
200
Avalanche ruggedness
EAS
IAS
non-repetitive avalanche energy
non-repetitive avalanche current
unclamped inductive load;
IAS = 47 A; tp = 0.1 ms; VDD ≤ 50 V;
RGS = 50 Ω; VGS = 10 V; starting
Tj = 25 °C; Figure 4
−
−
460
50
mJ
A
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
2 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa24
03aa16
120
100
80
60
40
20
0
120
I
P
der
(%)
der
(%)
100
80
60
40
20
0
0
25
50
75 100 125 150 175 200
o
0
25
50
75 100 125 150 175 200
o
T
( C)
T
( C)
mb
mb
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
003aaa017
003aaa016
2
3
10
10
I
AS
I
D
(A)
(A)
R
= V / I
DS
o
DSon
D
25 C
2
10
t
= 10 µs
p
10
100 µs
t
p
o
10
P
T prior to avalanche = 150 C
j
d =
1 ms
T
D.C.
10 ms
100 ms
t
t
p
T
1
10
1
-2
10
-1
10
-3
1
10
3
10
10
2
1
10
t
(ms)
V
(V)
p
DS
Tmb = 25 °C; IDM is single pulse.
Unclamped inductive load; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 5 V; starting Tj = 25 °C and 150 °C.
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration.
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
3 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting Figure 5
base
0.6
K/W
Rth(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
60
50
K/W
K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint.
7.1 Transient thermal impedance
003aaa018
1
δ = 0.5
Z
th(j-mb)
(K/W)
0.2
-1
10
0.1
0.05
0.02
t
p
P
δ =
T
-2
10
Single Pulse
t
t
p
T
-3
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t
(s)
p
Fig 5. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
4 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
gate-source threshold voltage ID = 1 mA; VDS = VGS
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V
150
−
−
V
VGS(th)
;
Figure 10
Tj = 25 °C
Tj = 175 °C
2.0
1.0
3.0
4.0
V
V
−
−
IDSS
drain-source leakage current VGS = 0 V; VDS = 150 V
Tj = 25 °C
Tj = 175 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VDS = 0 V; VGS = ±10 V
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 8 and 9
Tj = 25 oC
−
−
30
35
98
mΩ
mΩ
Tj = 175 °C
−
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
ID = 50 A; VDS = 120 V;
VGS = 10 V; Figure 15
−
−
−
−
−
−
−
−
−
−
79
−
−
45
−
−
−
−
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
17
33
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
4720
456
208
25
VDD = 75 V; RD = 1.5 Ω;
VGS = 10 V; RG = 5.6 Ω
138
79
td(off)
tf
turn-off delay time
fall time
93
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
−
0.85
1.2
V
voltage
Figure 14
trr
reverse recovery time
recovered charge
IS = 20 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
−
−
118
−
−
ns
Qr
0.66
nC
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
5 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
003aaa019
003aaa020
50
50
40
V
= 10 V
8 V
GS
I
6 V
V
> I x R
D
D
DS
DSon
I
D
(A)
40
(A)
o
30
20
175
C
30
20
10
0
5.4 V
5.2 V
5 V
o
T = 25
C
j
10
0
4.8 V
4.6 V
4.4 V
0
0.4
0.8
1.2
1.6
2
1
2
3
4
6
8
9
0
5
7
10
V
(V)
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aaa021
003aaa022
3.0
0.14
2.8
4.4 V
R
a
DSon
2.6
4.6 V
(Ω)
0.12
0.10
0.08
4.8 V
5.0 V
2.4
2.2
2.0
5.2 V
5.4 V
1.8
1.6
1.4
0.06
0.04
1.2
1.0
0.8
0.6
6.0 V
= 8 V
V
GS
0.02
0
5
10
30
-40
0
40
0
15
20
25
80
120
T
160
o
(
C )
I
(A)
j
D
Tj = 25 °C
RDSon
a =
---------------------------
R
°
DSon(25 C)
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
6 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
003aaa023
003aaa024
-2
10
4.5
I
4
D
V
GS(th)
max
-3
-4
-5
(A)
10
10
10
(V)
3.5
min
3
typ
typ
2.5
2
max
min
1.5
1
0.5
0
-6
10
10
-7
5
-60
-20
20
60
100
140
180
1
3
2
4
o
V
(V)
T ( C)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
003aaa025
003aaa026
4
10
50
g
C
iss
C
C
iss, oss,
C
fs
o
rss
(pF)
T = 25
j
C
(S)
40
30
20
3
10
C
oss
o
T = 175
j
C
10
0
C
rss
2
10
-1
2
1
10
10
0
10
20
30
40
50
10
V
(V)
DS
I
(A)
D
Tj = 25 °C and 175 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
7 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
003aaa028
003aaa027
10
50
I
= 50 A
o
D
V
GS
(V)
45
T = 25
C
V
I
= 30 V
j
DD
S
(A)
8
6
4
2
0
40
35
V
= 120 V
DD
o
T = 175
C
j
30
25
o
20
15
10
5
T = 25
j
C
0
20
40
60
80
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Q
(nC)
V
(V)
G
SD
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 50 A; VDD = 30 V and 120 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
8 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
1
L
1
A
c
UNIT
p
q
Q
1
1
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-46
00-09-07
01-02-16
SOT78
3-lead TO-220AB
Fig 16. SOT78
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
9 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
99-06-25
01-02-12
SOT404
Fig 17. SOT404 (D2-PAK).
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
10 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
04 20010222
Product specification; fourth version; supersedes third version
PSMN035-150_SERIES_HG_3 of 1 August 1999
Maximum value of Qgd added in “Dynamic characteristics” on page 5.
•
03 19990801
-
Product specification; third version; supersedes second version
PSMN035-150_SERIES_2 of 1 August 1999
Lotus Manuscript version; August 1999 Rev 1.000
•
Front and back page (including address information) added.
•
02 19990801
01 19990201
-
-
Product specification; second version; supersedes initial version
PSMN035-150_SERIES_1 of 1 February 1999
Lotus Manuscript version; August 1999 Rev 1.000.
•
Product specification; initial version
Lotus Manuscript version.
•
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
11 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07994
© Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 04 — 22 February 2001
12 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
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The Netherlands, Fax. +31 40 272 4825
(SCA71)
9397 750 07994
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 04 — 22 February 2001
13 of 14
PSMN035-150B; PSMN035-150P
Philips Semiconductors
N-channel enhancement mode field-effect transistor
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
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7.1
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© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 22 February 2001
Document order number: 9397 750 07994
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