PSMN040-100MSE [NEXPERIA]
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applicationsProduction;
| 型号： | PSMN040-100MSE |
| 厂家： | 
Nexperia |
| 描述： | N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applicationsProduction 开关 脉冲 晶体管 |
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PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE)
systems capable of delivering up to 90W to each powered device (PD). Such solutions
place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”,
thermal management and power density requirements.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
Very low IDSS
•
•
•
•
3. Applications
High power PoE applications (60W and higher)
IEEE802.3at and proprietary solutions
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
30
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
91
W
Static characteristics
RDSon drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
-
29.4
36.6
mΩ
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 10 A; VDS = 50 V;
Tj = 25 °C; Fig. 14; Fig. 15
-
-
10.7
30
-
-
nC
nC
QG(tot)
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
-
54
mJ
source avalanche
energy
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
mb
mounting base; connected to
drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN040-100MSE
LFPAK33
Plastic single ended surface mounted package (LFPAK33); 4
leads
SOT1210
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN040-100MSE
M40E10
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
V
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tj = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
-
30
A
-
21
A
IDM
Ptot
Tstg
peak drain current
-
121
91
A
total power dissipation
storage temperature
-
W
°C
-55
175
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
2 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
Symbol
Tj
Parameter
Conditions
Min
-55
-
Max
175
260
Unit
°C
junction temperature
peak soldering temperature
Tsld(M)
°C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
[1]
-
-
70
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
121
Avalanche Ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 30 A;
Vsup ≤ 100 V; RGS = 50 Ω; unclamped;
Fig. 3
-
54
mJ
[1] Continuous current is limited by package.
003aak532
03aa16
40
30
20
10
0
120
I
D
(A)
P
der
(%)
80
40
0
0
25
50
75 100 125 150 175 200
0
50
100
150
200
T (°C)
j
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
3 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
003aak533
2
10
I
AL
(A)
(1)
(2)
10
1
10
-3
-2
-1
10
10
1
AL
10
t
(ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
003aak534
3
10
I
D
(A)
2
10
Limit R
= V / I
DS
DSon
D
t
= 10 us
p
100 us
10
1 ms
DC
1
10 ms
100 ms
-1
10
2
3
1
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
1.44
1.65
K/W
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
4 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
003aak535
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
t
p
-1
P
10
10
δ =
0.05
T
0.02
single shot
-5
t
t
p
T
-2
-6
-4
-3
-2
-1
10
10
10
10
10
10
1
t
(s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
V
V
V
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.3
3.3
4
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
-
-
-
4.6
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
1
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.05
-
1
µA
µA
nA
nA
mΩ
500
100
100
66
IGSS
10
10
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
-
-
-
99
36.6
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
29.4
1.65
RG
gate resistance
f = 10 MHz
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
5 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Dynamic characteristics
QG(tot)
total gate charge
ID = 10 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
-
-
30
24
-
-
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C
QGS
gate-source charge
ID = 10 A; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
-
-
7.6
4.5
-
-
nC
nC
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
3.1
-
nC
QGD
gate-drain charge
-
-
10.7
5.6
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 10 A; VDS = 50 V; Tj = 25 °C;
Fig. 14; Fig. 15
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
-
1470
110
80
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 5 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
8.3
-
-
-
-
ns
ns
ns
ns
14.1
18.7
13
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.82
41
1.2
V
reverse recovery time IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
ns
nC
VDS = 50 V; Tj = 25 °C
recovered charge
Qr
75
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
6 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
003aak536
003aak537
30
80
R
DSon
7 V
V
= 6.5 V
I
20 V
10 V
8 V
GS
D
(A)
25
70
60
50
40
30
20
20
15
10
5
6 V
5.5 V
5 V
4.5 V
0
0
0.5
1
1.5
2
2.5
DS
3
4
6
8
10
12
14
16
V
GS
18
(V)
20
V
(V)
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aak538
003aak539
15
30
g
fs
(S)
I
D
(A)
12
9
24
18
12
6
6
175°C
T = 25°C
j
3
0
0
0
2
4
6
8
D
10
0
1
2
3
4
5
6
7
8
I
(A)
V
(V)
GS
Fig. 8. Forward transconductance as a function of
drain current; typical values
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
7 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
003aak573
003aak574
- 1
- 2
- 3
- 4
- 5
- 6
5
(V)
10
V
GS(th)
I
D
(A)
min
typ max
Max
4
10
10
10
10
10
3
2
1
0
Typ
Min
-60 -30
0
30
60
90 120 150 180
T (°C)
0
2
4
6
j
V
(V)
GS
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
003aak540
003aaj323
100
3
R
DSon
5.5 V
6 V
6.5V
a
2.4
80
1.8
1.2
0.6
0
60
40
20
7 V
8 V
10 V
5
10
15
20
25
(A)
30
-60
0
60
120
180
°
I
Tj ( C)
D
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
8 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
003aak542
10
V
V
DS
GS
(V)
V
= 280VV
GS
I
8
6
4
2
0
D
5105 V
8204VV
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 14. Gate charge waveform definitions
0
5
10
15
20
25
Q
30
(nC)
35
G
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aak543
003aak544
4
10
30
C
I
S
(pF)
(A)
24
18
12
6
C
iss
3
10
C
oss
2
10
C
rss
175°C
T = 25°C
j
10
-1
0
2
10
1
10
10
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
(V)
V
DS
SD
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
values
voltage; typical values
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
9 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
11. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
A
E
A
e
1
c
1
b
1
E
L
1
mounting
base
D
1
D
H
1
4
e
X
b
w
A
c
A
C
1
θ
Lp
y
C
detail X
0
1
2.5
5 mm
L
scale
Dimensions
(1)
(1)
(1)
Unit
A
A
b
b
c
c
D
D
1
E
E
1
e
e
1
H
L
p
w
y
θ
1
1
°
max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45
nom
3.40 0.25 0.50
3.20 0.13 0.30
8
0
mm
0.65 0.65
0.20 0.10
°
0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90 3.20 2.00
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
11-12-19
12-03-12
SOT1210
Fig. 18. Package outline LFPAK33 (SOT1210)
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
10 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
Right to make changes — Nexperia reserves the right to
the objective specification for product
development.
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
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modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
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or completeness of such information and shall have no liability for the
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responsibility for the content in this document if provided by an information
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
11 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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Nexperia accepts no liability for inclusion and/or use of non-
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
12 / 13
Nexperia
PSMN040-100MSE
N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33
designed specifically for high power PoE applications
13. Contents
1
General description ............................................... 1
Features and benefits ............................................1
2
3
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 March 2013
©
PSMN040-100MSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 March 2013
13 / 13
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