PSMN5R0-100PS,127 [NXP]
PSMN5R0-100PS - N-channel 100 V 5 mΩ standard level MOSFET in TO-220 TO-220 3-Pin;型号: | PSMN5R0-100PS,127 |
厂家: | NXP |
描述: | PSMN5R0-100PS - N-channel 100 V 5 mΩ standard level MOSFET in TO-220 TO-220 3-Pin |
文件: | 总15页 (文件大小:209K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN5R0-100PS
O-220AB
T
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Rev. 3 — 26 September 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for standard level gate drive
and conduction losses
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
-
-
100
120
V
A
[1]
ID
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot
Tj
total power dissipation Tmb = 25 °C; see Figure 2
junction temperature
-
-
-
338
W
-55
175 °C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 100 °C; see Figure 12;
see Figure 13
-
-
7.7
4.3
9
5
mΩ
[2]
V
GS = 10 V; ID = 25 A;
mΩ
Tj = 25 °C; see Figure 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A;
-
-
49
-
-
nC
nC
VDS = 50 V; see Figure 14;
QG(tot)
170
see Figure 15
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche ID = 120 A; Vsup ≤ 100 V;
energy RGS = 50 Ω; Unclamped
V
GS = 10 V; Tj(init) = 25 °C;
-
-
537 mJ
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
[1] Continuous current limited by package
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
3
source
G
mb
mounting base; connected to drain
mbb076
S
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN5R0-100PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
2 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tj = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
-
-
-
110
120
622
A
[1]
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C;
A
see Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; see Figure 2
-
338
175
175
260
W
-55
-55
-
°C
°C
°C
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C
-
-
120
622
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 100 V; RGS = 50 Ω; Unclamped
-
537
mJ
[1] Continuous current limited by package
003aaf735
03aa16
120
200
I
D
(A)
P
der
(%)
160
80
120
(1)
80
40
0
40
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
3 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
003aaf734
104
I
D
(A)
103
Limit RDSon = VDS / ID
tp =10 μs
100 μs
102
10
1
1 ms
10 ms
100 ms
DC
10-1
10-1
1
10
102
103
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
4 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to mounting
base
see Figure 4
-
0.22
0.44
K/W
Rth(j-a)
thermal resistance from junction to ambient
vertical in free air
-
60
-
K/W
003aaf733
1
Zth(j-mb)
(K/W)
d = 0.5
10-1
10-2
10-3
0.2
0.1
0.05
t
p
P
=
T
0.02
single shot
t
t
p
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
5 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
100
90
-
-
-
-
-
V
V
V
-
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
4.6
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
1
2
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
3
4
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.08
-
10
µA
µA
nA
nA
mΩ
500
100
100
14
IGSS
10
10
12
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
-
-
-
7.7
4.3
0.9
9
5
-
mΩ
mΩ
Ω
[1]
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
-
170
-
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
-
140
48
-
-
-
nC
nC
nC
QGS
gate-source charge
ID = 75 A; VDS = 50 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th)
pre-threshold gate-source
charge
31
QGS(th-pl)
post-threshold gate-source
charge
-
17.3
-
nC
QGD
gate-drain charge
-
-
49
-
-
nC
V
VGS(pl)
gate-source plateau voltage VDS = 50 V; see Figure 14;
see Figure 15
5.1
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
-
-
-
-
-
9900
660
381
45
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
VDS = 50 V; RL = 0.67 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; ID = 75 A; Tj = 25 °C
91
td(off)
tf
turn-off delay time
fall time
122
63
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
6 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
0.8
1.2
V
trr
reverse recovery time
recovered charge
IS = 25 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 50 V
-
-
75
-
-
ns
Qr
235
nC
[1] Measured 3 mm from package.
003aaf723
003aaf724
250
100
I
g
D
fs
(A)
(S)
200
80
60
40
20
0
150
100
50
T = 175
j
C
T = 25 C
°
j
°
0
0
30
60
90
120
0
2
4
6
V
(V)
I
(A)
GS
D
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf725
003aaf726
20
240
I
D
R
DSon
(A)
10.0
(m
)
Ω
200
20.0
8.0
6.0
15
10
5
160
120
80
40
0
5.5
V
(V) =5
GS
4.5
(V)
0
0
5
10
15
20
0
0.5
1
1.5
2
V
(V)
V
GS
DS
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
7 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
003aaf727
003aad280
105
5
V
GS(th)
(V)
C
(pF)
4
3
2
1
0
max
C
iss
104
103
102
C
rss
typ
min
10-1
1
10
102
−60
0
60
120
180
V
(V)
GS
T (°C)
j
Fig 9. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
03aa35
003aaf728
−1
10
I
2.8
a
D
(A)
min
typ
max
−2
−3
−4
−5
−6
10
2.4
2
10
10
10
10
1.6
1.2
0.8
0.4
0
-60
0
60
120
180
0
2
4
6
T (°C)
V
(V)
j
GS
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
8 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
003aaf732
7
V
DS
R
DSon
(mΩ)
V
(V) =5.5
I
GS
D
6
V
GS(pl)
6.0
8.0
V
GS(th)
GS
5
4
3
10.0
15.0
V
Q
Q
20.0
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
30
60
90
120
150
I
(A)
D
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
003aaf729
003aaf730
10
105
V
GS
C
(pF)
(V)
80V
C
8
iss
104
50V
V
= 20V
DS
6
4
2
0
103
102
10
C
oss
C
rss
0
50
100
150
200
10-1
1
10
102
Q
(nC)
V
(V)
DS
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
9 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
003aaf731
100
I
S
(A)
80
60
40
20
0
T = 175
j
C
T = 25 C
°
j
°
0
0.3
0.6
0.9
1.2
V
(V)
SD
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
10 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 18. Package outline SOT78 (TO-220AB)
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
11 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
8. Revision history
Table 7.
Document ID
PSMN5R0-100PS v.3 20110926
Revision history
Release date
Data sheet status
Change notice
Supersedes
Product data sheet
-
PSMN5R0-100PS v.2
Modifications:
• Various changes to content.
PSMN5R0-100PS v.2 20110415
Product data sheet
-
PSMN5R0-100PS v.1
PSMN5R0-100PS
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
12 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
9. Legal information
9.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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data sheet shall define the specification of the product as agreed between
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PSMN5R0-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
13 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
non-automotive qualified products in automotive equipment or applications.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN5R0-100PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 26 September 2011
14 of 15
PSMN5R0-100PS
NXP Semiconductors
N-channel 100 V 5 mΩ standard level MOSFET in TO-220
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 September 2011
Document identifier: PSMN5R0-100PS
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