PSMN7R6-60BS_技术文档

PSMN7R6-60BS

AK

D2P

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

Rev. 2 — 2 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

60

Unit

V

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

-

I_D

-

92

A

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

-

149

175

W

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13; see Figure 9

-

5.9

7.8

mΩ

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A; V_DS= 30 V;

see Figure 15; see Figure 14

-

10.6

38.7

-

nC

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 30 V;

see Figure 14; see Figure 15

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 92 A;

-

110

mJ

drain-source

V_sup≤ 100 V; R_GS= 50 Ω; unclamped

avalanche energy

PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

G

D

S

D

gate

drain^[1]

mb

D

S

2

3

source

G

mb

mounting base; connected to

drain

mbb076

2

1

3

SOT404 (D2PAK)

[1] It is not possible to make connection to pin 2.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN7R6-60BS

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

60

Unit

V

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

R_GS= 20 kΩ

-

V_DGR

V_GS

-

60

V

-20

20

V

I_D

V_GS= 10 V; T_mb= 100 °C; see Figure 1

V_GS= 10 V; T_mb= 25 °C; see Figure 1

-

65

A

92

A

I_DM

peak drain current

pulsed; t_p≤ 10 µs; T_mb= 25 °C;

389

A

see Figure 3

P_tot

T_stg

T_j

total power dissipation

storage temperature

T_mb= 25 °C; see Figure 2

-

149

175

260

W

-55

-

°C

junction temperature

T_sld(M)

peak soldering temperature

Source-drain diode

I_S

source current

peak source current

T_mb= 25 °C

-

92

A

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

389

Avalanche ruggedness

E_DS(AL)S

non-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 92 A;

V_sup≤ 100 V; R_GS= 50 Ω; unclamped

-

110

mJ

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

03aa16

003aad661

120

100

I

D

(A)

P

der

(%)

80

60

40

20

0

80

40

0

50

100

150

200

0

50

100

150

200

T

mb

(°C)

T

(°C)

mb

Fig 1. Continuous drain current as a function of

mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aad700

3

10

I

D

Limit R

= V / I

DS D

(A)

DSon

2

10 μs

10

100 μs

10

DC

1 ms

10 ms

100 ms

1

−1

10

−2

2

1

10

V

(V)

DS

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

5. Thermal characteristics

Table 5.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to see Figure 4

mounting base

-

0.49

1.01

K/W

R_th(j-a)

thermal resistance from junction to Minimum footprint; mounted on a

-

50

-

K/W

ambient

printed circuit board

003aad662

1

Z

th

δ = 0.5

(K/W)

0.2

−1

−2

10

0.1

0.02

0.05

t

p

single shot

P

δ =

T

10

t

p

T

−3

10

−3

−2

−6

−5

−4

−1

10

1

10

t

(s)

p

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

4 of 14

PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

6. Characteristics

Table 6.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

54

60

2

-

V

-

V_GS(th)

V_GSth

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

voltage see Figure 10; see Figure 11

3

4

gate-source threshold I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

voltage

1

-

V

see Figure 11

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 11

4.6

I_DSS

drain leakage current

gate leakage current

V_DS= 60 V; V_GS= 0 V; T_j= 25 °C

V_DS= 60 V; V_GS= 0 V; T_j= 125 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

-

0.05

10

µA

nA

mΩ

-

100

18

I_GSS

2

R_DSon

drain-source on-state

resistance

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

see Figure 12

13.3

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 13; see Figure 9

-

5.9

7.8

-

mΩ

R_G

gate resistance

f = 1 MHz

0.98

Ω

Dynamic characteristics

Q_G(tot)

Q_GS

total gate charge

I_D= 25 A; V_DS= 30 V; V_GS= 10 V;

see Figure 14; see Figure 15

-

38.7

12.9

6.9

-

nC

gate-source charge

Q_GS(th)

pre-threshold

gate-source charge

Q_GS(th-pl)

Q_GD

V_GS(pl)

C_iss

post-threshold

gate-source charge

-

6

-

nC

V

gate-drain charge

I_D= 25 A; V_DS= 30 V; V_GS= 10 V;

see Figure 15; see Figure 14

10.6

5.6

gate-source plateau

voltage

I_D= 25 A; V_DS= 30 V; see Figure 14;

see Figure 15

input capacitance

V_DS= 30 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 16; see Figure 8

2651

342

183

pF

C_oss

output capacitance

V_DS= 30 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 16

C_rss

reverse transfer

capacitance

V_DS= 30 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 16; see Figure 8

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 30 V; R_L= 1.2 Ω; V_GS= 10 V;

R_G(ext)= 4.7 Ω

-

19

21

37

13

-

ns

turn-off delay time

fall time

PSMN7R6-60BS

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Product data sheet

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

Table 6.

Symbol

Characteristics …continued

Parameter

Conditions

Min

Typ

Max

Unit

Source-drain diode

V_SD

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 17

-

0.86

1.2

V

t_rr

reverse recovery time I_S= 25 A; dI_S/dt = 100 A/µs; V_GS= 0 V;

-

40.4

56

-

ns

V_DS= 30 V

Q_r

recovered charge

nC

003aad663

003aad669

100

160

6.0

15

10

I

D

g

fs

5.5

5.0

(A)

(S)

8.0

80

60

40

20

0

120

80

40

0

V

(V) = 4.5

1.5

GS

0

0.5

1

2

0

20

40

60

80

100

V

(V)

DS

I

D

(A)

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Forward transconductance as a function of

drain current; typical values

003aad665

003aad664

100

4000

C

iss

I

D

C

(A)

80

(pF)

3000

60

40

C

rss

2000

1000

0

T = 25 °C

T = 175 °C

j

20

0

2

4

6

0

5

10

15

20

V

GS

(V)

V

(V)

GS

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

03aa35

003aad666

−1

10

20

I

R

D

DSon

(A)

(mΩ)

min

typ

max

−2

−3

−4

−5

−6

10

16

12

8

4

0

5

10

15

20

0

2

4

6

V

GS

(V)

V

(V)

GS

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

003aad280

003aad696

5

2.4

V

a

GS(th)

(V)

2

4

3

2

1

0

max

1.6

1.2

0.8

0.4

0

typ

min

−60

0

60

120

180

-60

0

60

120

180

T ( C)

°

T (°C)

j

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

003aad667

003aad671

30

10

4.5

5.0

5.5

V

GS

R

(V)

DSon

30 V

(mΩ)

8

6

4

2

0

V

= 12 V

DS

48 V

20

6.0

10

V

(V) = 15

10.0

8.0

GS

0

10

20

30

40

50

0

20

40

60

80

100

I

(A)

D

Q

G

(nC)

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values

Fig 14. Gate-source voltage as a function of gate

charge; typical values

003aad668

4

10

C

(pF)

V

DS

C

iss

I

D

3

V

GS(pl)

10

V

GS(th)

GS

C

oss

V

Q

GS1

GS2

C

rss

Q

GD

GS

Q

2

G(tot)

10

−2

−1

2

10

1

10

003aaa508

V

(V)

DS

Fig 15. Gate charge waveform definitions

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

003aad670

100

I

S

(A)

80

60

40

20

0

T = 175 °C

T = 25 °C

j

0

0.3

0.6

0.9

1.2

V

SD

(V)

Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values

PSMN7R6-60BS

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Product data sheet

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

7. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

A

E

1

mounting

base

D

1

D

H

D

2

L

p

1

3

c

b

e

Q

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

D

E

A

b

UNIT

c

D

e

L

H

Q

1

p

D

max.

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

1.60

1.20

10.30

9.70

2.90 15.80 2.60

2.10 14.80 2.20

mm

11

2.54

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-02-11

06-03-16

SOT404

Fig 18. Package outline SOT404 (D2PAK)

PSMN7R6-60BS

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Product data sheet

Rev. 2 — 2 March 2012

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PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

8. Revision history

Table 7.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PSMN7R6-60BS v.2

Modifications:

20120302

Product data sheet

-

PSMN7R6-60BS v.1

• Status changed from objective to product.

• Various changes to content.

PSMN7R6-60BS v.1

20111020

Objective data sheet

-

PSMN7R6-60BS

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Product data sheet

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PSMN7R6-60BS

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N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

9. Legal information

9.1 Data sheet status

Document status^[1][2]

Product status^[3]

Definition

Objective [short] data sheet

Development

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

Right to make changes— NXP Semiconductors reserves the right to make

9.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview— The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use— NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Draft— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet— A short data sheet is an extract from a full data sheet with

the same product type number(s) and title. A short data sheet is intended for

quick reference only and should not be relied upon to contain detailed and full

information. For detailed and full information see the relevant full data sheet,

which is available on request via the local NXP Semiconductors sales office.

In case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Quick reference data— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications— Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification— The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

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applications and products.

9.3 Disclaimers

Limited warranty and liability— Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Limiting values— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial saleof NXP Semiconductors.

PSMN7R6-60BS

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Product data sheet

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12 of 14

PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

Terms and conditions of commercial sale— NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

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liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

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conveyance or implication of any license under any copyrights, patents or

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Translations— A non-English (translated) version of a document is for

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Export control— This document as well as the item(s) described herein may

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Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Non-automotive qualified products— Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-buslogo,ICODE,I-CODE,ITEC,Labelution

,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand

UCODE— are trademarks of NXP B.V.

non-automotive qualified products in automotive equipment or applications.

HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation.

10. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

PSMN7R6-60BS

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 2 March 2012

13 of 14

PSMN7R6-60BS

NXP Semiconductors

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

11. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

2

3

4

5

6

7

8

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9

Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

9.1

9.2

9.3

9.4

10

Contact information. . . . . . . . . . . . . . . . . . . . . .13

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 March 2012

Document identifier: PSMN7R6-60BS


型号：	PSMN7R6-60BS
厂家：	NXP
描述：	92A, 60V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 开关脉冲晶体管
文件：	总14页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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