PSS9014C [NXP]

NPN general purpose transistor; NPN通用晶体管
PSS9014C
型号: PSS9014C
厂家: NXP    NXP
描述:

NPN general purpose transistor
NPN通用晶体管

晶体 小信号双极晶体管 开关
文件: 总7页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PSS9014C  
NPN general purpose transistor  
Product specification  
2004 Aug 10  
Supersedes data of 2002 Sep 20  
Philips Semiconductors  
Product specification  
NPN general purpose transistor  
PSS9014C  
FEATURES  
PINNING  
PIN  
High power dissipation: 500 mW  
Low collector capacitance  
DESCRIPTION  
1
2
3
collector  
base  
Low collector-emitter saturation voltage  
High current capability.  
emitter  
APPLICATIONS  
General purpose switching and amplification.  
1
handbook, halfpage  
1
3
2
3
DESCRIPTION  
2
NPN low VCEsat transistor in a SOT54 (TO-92) plastic  
package.  
MAM279  
MARKING  
TYPE NUMBER  
PSS9014C  
MARKING CODE  
Fig.1 Simplified outline (SOT54) and symbol.  
S9014C  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
50  
UNIT  
V
V
V
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
45  
open collector  
5
100  
200  
200  
500  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
Tamb 25 °C; note 1  
Tstg  
65  
Tj  
°C  
Tamb  
65  
°C  
Note  
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.  
2004 Aug 10  
2
Philips Semiconductors  
Product specification  
NPN general purpose transistor  
PSS9014C  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to in free air; note 1  
ambient  
250  
K/W  
Note  
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 30 V; IE = 0  
MIN.  
TYP. MAX. UNIT  
ICBO  
collector-base cut-off current  
15  
nA  
µA  
nA  
nA  
VCB = 30 V; IE = 0; Tamb = 150 °C  
VCE = 30 V; IB = 0  
5
ICEO  
IEBO  
hFE  
collector-emitter cut-off current  
emitter-base cut-off current  
DC current gain  
100  
100  
600  
450  
300  
850  
700  
VEB = 5 V; IC = 0  
IC = 1 mA; VCE = 5 V  
IC = 2 mA; VCE = 5 V  
200  
200  
300  
300  
200  
815  
650  
220  
VCEsat  
VBEsat  
VBEon  
fT  
collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; note 1  
mV  
mV  
mV  
MHz  
base-emitter saturation voltage  
base-emitter turn-on voltage  
transition frequency  
IC = 100 mA; IB = 0.5 mA; note 1  
IC = 2 mA; VCE = 5 V  
580  
100  
IC = 50 mA; VCE = 10 V;  
f = 100 MHz  
Cc  
F
collector capacitance  
noise figure  
VCB = 10 V; IE = ie = 0; f = 1 MHz  
1.6  
1.75  
10  
pF  
dB  
VCE = 5 V; IC = 0.2 mA;  
RS = 2 k; f = 1 kHz; B = 200 Hz  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
2004 Aug 10  
3
Philips Semiconductors  
Product specification  
NPN general purpose transistor  
PSS9014C  
MLD927  
MLD928  
3
4
10  
10  
handbook, halfpage  
handbook, halfpage  
V
CEsat  
h
FE  
(mV)  
3
2
10  
10  
2
10  
10  
1
10  
10  
10  
1  
2
3
2  
1  
2
I
3
1
10  
10  
10  
10  
1
10  
10  
10  
(mA)  
I
(mA)  
C
C
VCE = 5 V.  
IC/IB = 20.  
Fig.2 DC current gain as a function of collector  
current; typical values.  
Fig.3 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
MLD929  
MLD930  
4
4
10  
10  
handbook, halfpage  
handbook, halfpage  
V
V
BE  
BEsat  
(mV)  
(mV)  
3
3
10  
10  
2
2
10  
10  
10  
10  
10  
10  
2  
1  
2
I
3
2  
1  
2
I
3
10  
1
10  
10  
10  
10  
1
10  
10  
10  
(mA)  
(mA)  
C
C
IC/IB = 20.  
Fig.4 Base-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter voltage as a function of  
collector current; typical values.  
2004 Aug 10  
4
Philips Semiconductors  
Product specification  
NPN general purpose transistor  
PSS9014C  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; 3 leads  
SOT54  
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
A
b
b
c
D
d
E
e
e
L
1
1
max.  
5.2  
5.0  
0.48  
0.40  
0.66  
0.55  
0.45  
0.38  
4.8  
4.4  
1.7  
1.4  
4.2  
3.6  
14.5  
12.7  
mm  
2.54  
1.27  
2.5  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
97-02-28  
04-06-28  
SOT54  
TO-92  
SC-43A  
2004 Aug 10  
5
Philips Semiconductors  
Product specification  
NPN general purpose transistor  
PSS9014C  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Aug 10  
6
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/03/pp7  
Date of release: 2004 Aug 10  
Document order number: 9397 750 13686  

相关型号:

PSS9015B

PNP general purpose transistor
NXP

PSSAC5

RoHS Compliant
WALL

PSSAC5-S033

RoHS Compliant
WALL

PSSAC5-S05

RoHS Compliant
WALL

PSSAC5-S09

RoHS Compliant
WALL

PSSAC5-S12

RoHS Compliant
WALL

PSSAC5-S15

RoHS Compliant
WALL

PSSAC5-S24

RoHS Compliant
WALL

PSSAC5-S48

RoHS Compliant
WALL

PSSB05P

ultra LOW CAPACITANCE - super speed bus protection - TVS ARRAY
PROTEC

PSSB05P-T710

Trans Voltage Suppressor Diode, 20W, 5V V(RWM), Bidirectional, 1 Element, Silicon, ROHS AND REACH COMPLIANT, MINIATURE, PLASTIC, DFN-2-0402, 2 PIN
PROTEC

PSSB05P_12

ULTRA LOW CAPACITANCE - SUPER SPEED BUS PROTECTION - TVS ARRAY
PROTEC