PUMB20-125 [NXP]

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363;


型号：	PUMB20-125
厂家：	NXP
描述：	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363 晶体管
文件：	总11页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PEMB20; PUMB20

PNP/PNP resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 2.2 kΩ

Rev. 02 — 21 February 2005

Product data sheet

1. Product proﬁle

1.1 General description

PNP/PNP resistor-equipped transistors.

Table 1:

Product overview

Type number

Package

Philips

NPN/PNP

complement

NPN/NPN

complement

JEITA

PEMB20

PUMB20

SOT666

SOT363

PEMD20

PUMD20

PEMH20

PUMH20

SC-88

1.2 Features

■ Built-in bias resistors

■ Simpliﬁes circuit design

■ Reduces component count

■ Reduces pick and place cost

1.3 Applications

■ Low current peripheral driver

■ Control of IC inputs

■ Replacement of general-purpose transistors in digital applications

1.4 Quick reference data

Table 2:

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

−50

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

−100

2.86

1.2

kΩ

1.54

0.8

2.2

R2/R1

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

2. Pinning information

Table 3:

Pinning

Description

Simpliﬁed outline

Symbol

GND (emitter) TR1

input (base) TR1

output (collector) TR2

GND (emitter) TR2

input (base) TR2

output (collector) TR1

R1 R2

TR2

TR1

R2 R1

001aab555

006aaa212

3. Ordering information

Table 4:

Ordering information

Type number

Package

Name

Description

Version

SOT666

SOT363

PEMB20

PUMB20

plastic surface mounted package; 6 leads

SC-88

4. Marking

Table 5:

Marking codes

Type number

PEMB20

Marking code^[1]

PUMB20

B9*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

2 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

5. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

open emitter

open base

−50

−10

collector-emitter voltage

emitter-base voltage

input voltage

open collector

positive

+10

negative

−12

I_O

output current (DC)

peak collector current

total power dissipation

SOT363

−100

I_CM

P_tot

T_amb≤ 25 °C

[1]

200

°C

[1] [2]

SOT666

200

T_stg

storage temperature

junction temperature

ambient temperature

−65

+150

150

T_j

°C

T_amb

−65

+150

°C

Per device

P_tot

total power dissipation

SOT363

T_amb≤ 25 °C

[1]

300

[1] [2]

SOT666

[1] Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

6. Thermal characteristics

Table 7:

Symbol

Per transistor

Thermal characteristics

Parameter

Conditions

Min

Typ

Max Unit

R_th(j-a)

thermal resistance from

T_amb≤ 25 °C

junction to ambient

[1]

SOT363

625

K/W

[1] [2]

SOT666

Per device

R_th(j-a)

thermal resistance from

junction to ambient

T_amb≤ 25 °C

[1]

SOT363

SOT666

416

K/W

[1] [2]

[1] Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

3 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

7. Characteristics

Table 8:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

Per transistor

I_CBO

Min

Typ

Max

Unit

collector-base cut-off V_CB= −50 V; I_E= 0 A

−100

current

I_CEO

collector-emitter

cut-off current

V_CE= −30 V; I_B= 0 A

−1

µA

V_CE= −30 V; I_B= 0 A;

T_j= 150 °C

−50

I_EBO

emitter-base cut-off

current

V_EB= −5 V; I_C= 0 A

−2

h_FE

DC current gain

V_CE= −5 V; I_C= −20 mA

I_C= −10 mA; I_B= −0.5 mA

V_CEsat

collector-emitter

−150

saturation voltage

V_I(off)

V_I(on)

off-state input voltage V_CE= −5 V; I_C= −1 mA

on-state input voltage V_CE= −0.3 V; I_C= −20 mA

bias resistor 1 (input)

−1.2

−1.6

2.2

−0.5

−2

1.54

0.8

2.86

1.2

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

f = 1 MHz

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

4 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

006aaa192

006aaa193

−10

CEsat

(mV)

(1)

(2)

(3)

(1) (2) (3)

−10

−1

−10

−1

−10

(mA)

I (mA)

V_CE= −5 V

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 1. DC current gain as a function of collector

current; typical values

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa194

006aaa195

−10

I(on)

(V)

I(off)

(V)

−10

(1)

(2)

(3)

−1

(1) (2)

−1

(3)

−1

−10

−1

−2

−1

−10

−1

−10

−1

−10

(mA)

I (mA)

V_CE= −0.3 V

V_CE= −5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 3. On-state input voltage as a function of collector

current; typical values

Fig 4. Off-state input voltage as a function of collector

current; typical values

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

5 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

8. Package outline

Plastic surface mounted package; 6 leads

SOT363

pin 1

index

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

97-02-28

04-11-08

SOT363

SC-88

Fig 5. Package outline SOT363 (SC-88)

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

6 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Plastic surface mounted package; 6 leads

SOT666

pin 1 index

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.6

0.5

0.27

0.17

0.18

0.08

1.7

1.5

1.3

1.1

1.7

1.5

0.3

0.1

1.0

0.5

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

01-08-27

04-11-08

SOT666

Fig 6. Package outline SOT666

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

7 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

9. Packing information

Table 9:

Packing methods

[1]

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number

Package

Description

Packing quantity

3000

4000

10000

PEMB20

PUMB20

SOT666

SOT363

4 mm pitch, 8 mm tape and reel

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-115

[2]

[3]

-115

-125

-135

-165

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

8 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

10. Revision history

Table 10: Revision history

Document ID

Release date Data sheet status

Change notice

Doc. number

Supersedes

PEMB20_PUMB20_2 20050221

Product data sheet

9397 750 14369 PUMB20_1

Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors

• Type number PEMB20 added

• Table 8 “Characteristics” V_i(on)input-on voltage renamed to V_I(on)on-state input voltage

• Table 8 “Characteristics” V_i(off)input-off voltage renamed to V_I(off)off-state input voltage

• Figure 1, 2, 3 and 4 electrical graphs added

• Table 9 “Packing methods” added

PUMB20_1

20031003

Product speciﬁcation -

9397 750 11822

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

9 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

11. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

13. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14369

Product data sheet

Rev. 02 — 21 February 2005

10 of 11

PEMB20; PUMB20

Philips Semiconductors

PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

Packing information. . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Contact information . . . . . . . . . . . . . . . . . . . . 10

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 21 February 2005

Document number: 9397 750 14369

Published in The Netherlands

PUMB20-125 [NXP]

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