PUMD17 [NXP]

Low VCEsat (BISS) transistors; 低VCEsat晶体管（ BISS ）晶体管


型号：	PUMD17
厂家：	NXP
描述：	Low VCEsat (BISS) transistors 低VCEsat晶体管（ BISS ）晶体管晶体小信号双极晶体管开关光电二极管 PC
文件：	总12页 (文件大小：956K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Automotive small-signal

discretes solutions

Drive the future with our innovative portfolio

Automotive

Simplifying design through increased functionality

By delivering more functionality from individual products, we help to

cut development times.With just a few small-signal discretes several

circuit blocks can be build and therewith the number of different

components on the bill-of-materials can be reduced signiﬁcantly.

Our small-signal discretes portfolio offers power and performance

levels previously only associated with much larger packages allowing

you to replace medium-power products with more compact

alternatives. And because you can now get high-performance

transistors and diodes in low-cost small-signal packages, you can

signiﬁcantly cut costs.Whether it’s superior ESD protection or

loadswitch functionality integrated into a single component,

our portfolio makes it easier to design a new system.

small-signal discretes solutions

As automotive manufacturers strive to enhance safety, performance, comfort and

fuel-efﬁciency levels, the semiconductor content of vehicles is rising and electronic

systems are becoming more complex. Consequently, system suppliers must meet

increasingly severe requirements. Building on our expertise in both automotive

and small-signal discretes solutions, Philips offers an extensive portfolio of discrete

components that help suppliers meet the rigorous and diverse technical demands

on automotive electronics.The wide portfolio enables automotive designers to be

ﬂexible in their designs. By means of integrated products the component count is

decreased and thus costs can be reduced.

All our new products are released in the well-known SOT23 package,

as well as in smaller packages like SOT323 (SC-70), SOD323 (SC-76)

and SOD323F (SC-90).To support the trend towards integration also

multiple transistors and diodes are available integrated into just a

single package like SOT457 (SC-74) and SOT363 (SC-88).

Key families

- LowV_CEsat(BISS) transistors

- Resistor-equipped transistors (RETs)

- Complex discretes

• BISS Loadswitches

• Matched pair transistors

• MOSFET drivers

Philips has all the technologies in place to lead the way in small-signal

discretes products, allowing to develop automotive applications that

will drive the future.

- LowV_F(MEGA) Schottky rectiﬁers

- ESD protection diodes

Key beneﬁts

- More power

- Lower costs

- More functionality

- Improved reliability

- Automotive packages

LowV_CEsat(BISS) transistors

These Breakthrough In Small-Signal (BISS) transistors offer best-in-class

efﬁciency, therefore getting the heat out of your applications.These cost-effective

alternatives to medium-power transistors deliver 1 – 5 A capability in SOT223

(SC-73), SOT89 (SC-62), SOT23 or SOT457 (SC-74).

CONTROLLER

MSD923

DC/DC converter

Key features

Key beneﬁts

Key applications

- Reduced thermal and electrical resistance

- Up to 5 A collector current capability I_C

- Up to 10 A peak collector current I_CM

- High performance to boardspace ratio

- High current gain h_FE- even at high I_C

- Extensive range of products available

- Less heat generation and therefore use at

high ambient temperatures possible

- Cost effective replacement of medium

power transistors

- Applications where heat is a concern

(e.g. engine- or dashboard mounted

components)

- High and low side switches, e.g. in control

units

- Increased performance from small-signal

discrete footprints

- Drivers in low supply voltage applications,

e.g. fans, motors

- Inductive load drivers, e.g. relays, buzzers

- MOSFET drivers

Less heat generation with BISS transistors

SOT223: I_C= 1.55 A; I_B= 0.1 A; PCB FR4 + 1 cm²Cu

BCP51,T_j= 130°C

PBSS9110Z,T_j= 103°C

PBSS5350Z,T_j= 60°C

PBSS5540Z,T_j= 45°C

SOT223 (SC-73)

SOT89 (SC-62)

SOT23

SOT457 (SC-74)

P_tot2000 mW

P_tot1300 mW

P_tot480 mW

P_tot750 mW

I_C(A)

1.0

V_CEO(V)

NPN

PNP

NPN

PNP

NPN

PNP

NPN

PNP

100

PBSS4130T

PBSS4140T

PBSS4160T

PBSS8110T

PBSS4230T

PBSS4240T

PBSS4350T

PBSS5130T

PBSS5140T

PBSS5160T

PBSS9110T

PBSS5230T

PBSS5240T

PBSS5350T

PBSS4140DPN (NPN/PNP)

PBSS8110D PBSS9110D

PBSS4240DPN (NPN/PNP)

PBSS8110Z

PBSS9110Z

2.0

3.0

PBSS4250X

PBSS4320X

PBSS4330X

PBSS4350X

PBSS5250X

PBSS5320X

PBSS5330X

PBSS5350X

PBSS4350Z

PBSS4540Z

PBSS5350Z

PBSS5540Z

PBSS4350D

PBSS303ND

PBSS304ND

PBSS305ND

PBSS4440D

PBSS5350D

PBSS303PD

PBSS304PD

PBSS305PD

PBSS5440D

PBSS4540X

PBSS4480X

PBSS4520X

PBSS5540X

PBSS5480X

PBSS5520X

4.0

5.0

power

supply

Resistor-equipped transistors (RETs)

control

input

Developed especially for the automotive sector, 500 mA RETs combine a transistor

with two resistors to provide an optimal integrated solution for digital applications in

automotive systems,for example control units. Also an extensive portfolio with single

and double 100 mA RETs is available for standard small-signal digital applications.

Tr2

Tr1

load

bra182

High side switch

Key features

Key beneﬁts

Key applications

-Transistor and two resistors integrated in

one package

- Lower handling and inventory costs

- Reduced boardspace requirements

- Digital applications

- Switching loads, e.g. for instrument clusters

- Controlling IC inputs, e.g. in engine

control units

- Initial 500 mA portfolio with several resistor - Shorter assembly times and reduced

combinations in SOT23 and SOT346 (SC-59A)

- Further resistor combinations and double

versions are planned

pick-and-place efforts

- Simpler design process

- Increased end product reliability due to

fewer soldering points

500 mA RETs

SOT23

SOT346 (SC-59A)

I_Cmax. (mA)

500

V_CEOmax. (V)

R1 (kΩ)

R2 (kΩ)

NPN

PNP

NPN

PNP

PDTD113ET

PDTD123ET

PDTD113ZT

PDTD123YT

PDTB113ET

PDTB123ET

PDTB113ZT

PDTB123YT

PDTD113EK

PDTD123EK

PDTD113ZK

PDTD123YK

PDTB113EK

2.2

PDTB123EK

PDTB113ZK

PDTB123YK

2.2

100 mA RETs

SOT23

SOT323 (SC-70)

SOT363 (SC-88)

Conﬁguration

I_Cmax. (mA)

single

double

V_CEOmax. (V)

R1 (kΩ) R2 (kΩ)

NPN

PNP

NPN

PNP

NPN/NPN

PUMH20

PUMH15

PUMH11

PUMH1

NPN/PNP

PNP/PNP

2.2

4.7

2.2

4.7

100

PDTC123ET

PDTC143ET

PDTC114ET

PDTC124ET

PDTC144ET

PDTC115ET

PDTC123YT

PDTC123JT

PDTC143XT

PDTC143ZT

PDTC114YT

PDTC124XT

PDTC144VT

PDTA123ET

PDTA143ET

PDTA114ET

PDTA124ET

PDTA144ET

PDTA115ET

PDTA123YT

PDTA123JT

PDTA143XT

PDTA143ZT

PDTA114YT

PDTA124XT

PDTA144VT

PDTC123EU

PDTC143EU

PDTC114EU

PDTC124EU

PDTC144EU

PDTC115EU

PDTC123YU

PDTC123JU

PDTC143XU

PDTC143ZU

PDTC114YU

PDTC124XU

PDTC144VU

PDTA123EU

PDTA143EU

PDTA114EU

PDTA124EU

PDTA144EU

PDTA115EU

PDTA123YU

PDTA123JU

PDTA143XU

PDTA143ZU

PDTA114YU

PDTA124XU

PDTA144VU

PUMD20

PUMD15

PUMD3

PUMB20

PUMB15

PUMB11

PUMB1

PUMD2

PUMH2

PUMD12

PUMD24

PUMB2

100

2.2

4.7

PUMH24

PUMB24

PUMH10

PUMH18

PUMH13

PUMH9

PUMD10

PUMD18

PUMD13

PUMD9

PUMB10

PUMB18

PUMB13

PUMB9

100

PUMH16

PUMD16

PUMB16

PDTC144WT PDTA144WT

PDTC144WU PDTA144WU

PUMH17

PUMH30

PUMH7

PUMD17

PUMD30

PUMD6

PUMB17

PUMB30

PUMB3

2.2

4.7

PDTC123TT

PDTC143TT

PDTC114TT

PDTC124TT

PDTC144TT

PDTC115TT

PDTA123TT

PDTA143TT

PDTA114TT

PDTA124TT

PDTA144TT

PDTA115TT

PDTC123TU

PDTC143TU

PDTC114TU

PDTC124TU

PDTC144TU

PDTC115TU

PDTA123TU

PDTA143TU

PDTA114TU

PDTA124TU

PDTA144TU

PDTA115TU

PUMH4

PUMD4

PUMB4

PUMH19

PUMH14

PUMD19

PUMD14

PUMB19

PUMB14

100

BISS Loadswitches

Tr1

Low V

CEsat

(BISS)

Power

supply

Load

Combining a BISS transistor with a RET, BISS Loadswitches provide full

miniature loadswitch functionality in a single package and deliver

best-in-class performance.

Tr2

(RET)

Control

input

Key features

Key beneﬁts

- BISS transistor and RET in one package

- Low “threshold” voltage (< 1V) compared

to MOSFET

- Integrated on-the-shelve solution for

switching loads

MSE336

GND

• Saves design and sourcing costs

• Reduction in boardspace requirements

• Just one or two external resistors needed

for full loadswitch capability

- Combination of low voltage drop and low

base drive current

Loadswitch

- Small drive power required

- Best-in-class performance for loadswitches

- Available for switching loads of 0.5 – 1 A

Key applications

- Supply line switches, e.g. in control units

- Control of lamps, motors and switches,

e.g. instrument clusters

• BISS transistor in the power path provides - High side switches for drivers

the lowest energy-losses

• RET in the control path provides a low

base drive current

SOT457 (SC-74)

SOT363 (SC-88)

I_C(A)

V_CEO(V)

V_CEsat(mV)

@ 500 mA

R1 = R2 (kΩ)

2.2

4.7

2.2

4.7

2.2

4.7

PBLS4001Y

PBLS4002Y

PBLS4003Y

PBLS4004Y

PBLS4005Y

0.5

350

170

180

PBLS4001D

PBLS4002D

PBLS4003D

PBLS4004D

PBLS4005D

PBLS6001D

PBLS6002D

PBLS6003D

PBLS6004D

PBLS6005D

1.0

sense

out

Matched pair transistors

Matched pair transistors are double transistors with matched current gain

h_FE1/h_FE2and matched base-emitter voltageV_BE1-V_BE2.The optimal product for the

most common applications is offered by means of several matching-categories

and different pinning options. Internally the transistors are fully isolated.

sense

Current sensor using

matched pairs

MSE265

Key features

Key beneﬁts

Key applications

- Current gain matching:

h_FE1/h_FE2= 0.7,0.9,0.95,0.98

- Base-emitter voltage matching:

V_BE1-V_BE2= 2 mV

- Improved performance of current mirror

and differential ampliﬁer circuits

- Drop-in replacement for standard double

transistors (BCM-series)

- Current mirror e.g. for current

measurement or to drive LED’s with a

constant current

- Differential ampliﬁer e.g. sensor

signal ampliﬁcation

- Standard double transistor pin-out for

BCM-types

- Simpliﬁed board layout (PMP-series)

- Eliminates need for costly

additional trimming

- Comparator e.g. for DC/DC converters

- Application optimized pin-out for all

PMP-types

- Common emitter conﬁguration for

5pin PMP-types

SOT143B

SOT457 (SC-74) SOT353 (SC-88A) SOT363 (SC-88)

P_totmax.

250 mW

380 mW

300 mW

Polarity

I_C(mA)

100

V_CEO(V)

h_FEmin.

110

h_FEmax.

800

h_FE1/h_FE2V_BE1-V_BE2(mV)

0.7

0.9

n.a.

BCV61/A/B/C

BCM61B

NPN

0.9

BCM847DS

BCM847BS

200

110

200

450

800

450

0.95

0.98

0.7

PMP4501G

PMP4501Y

PMP4201Y

PMP4201G

n.a.

BCV62/A/B/C

BCM62B

0.9

PNP

100

0.9

BCM857DS

BCM857BS

PMP5501Y

PMP5201Y

0.95

0.98

PMP5501G

PMP5201G

MOSFET drivers

Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET

driving functionality.With a choice of conﬁgurations Philips offers solutions to take load from the driving circuit,

improve the efﬁciency of the MOSFET and enable design ﬂexibility.

Key features

Key beneﬁts

Key applications

- Complete MOSFET driving functionality in

one package

- Improved MOSFET efﬁciency by

• Minimizing rise and fall time

• Fast gate (dis-)charge of the driven

MOSFET

- MOSFET driver

- Bipolar power transistor driver

- Push-pull driver

- Several conﬁgurations available

-Takes load from the driving circuit

and thus minimizes the IC power dissipation

- More design ﬂexibility: the control IC and

the MOSFET do not have to be placed as

close as possible anymore

- Cost-effective alternative to IC-solutions

SOT457 (SC-74)

SOT346 (SC-59A)

SOT457 (SC-74)

2, 3

Tr1

ext

Tr1

Tr2

Tr1

Tr2

Conﬁguration

P_totmax.

Tr2

Tr1

Tr3

5, 6

bra841

bra837

bra838

bra839

bra840

600 mW

PMD9050D

250 mW

600 mW

Contains

I_C(A)

0.1

I_CM(A)

0.2

R1 = R2 (kΩ)

PMD4001K (NPN)

PMD5001K (PNP)

PMD9010D

PMD9001D

PMD9002D

PMD9003D

2.2

4.7

General purpose transistors

Switching transistors -

PMD4002K (NPN)

PMD5002K (PNP)

PMD2001D

0.6

1.0

1.2

2.0

reduced storage time

LowV_CEsat(BISS) transistors -

PMD4003K (NPN)

PMD5003K (PNP)

PMD3001D

LowV_CEsat, high h_FEand I_C

Release mid 2006

LowV_F(MEGA) Schottky rectiﬁers

Maximum Efﬁciency General Application (MEGA) Schottky rectiﬁers offer

extremely low forward voltage drop during operation, resulting in the

highest efﬁciency and reduced heat dissipation.They are ideal, cost-effective

replacements for rectiﬁers in SMA or SOD123.

Key features

Key beneﬁts

Key applications

- Ultra low forward voltage dropV_F

- Up to 3 A continuous current capability I_F

- Up to 10 A peak current capability I_FSM

- Low power dissipation

- Less heat generation and therefore

increased reliability

- Power management circuits – especially

DC/DC conversion

- Cost effective replacement of SMA and

SOD123 rectiﬁers

-Various rectiﬁer circuits, e.g. in airbag

control units

- Integrated guard ring for stress protection

• Reduced boardspace requirements

• Medium power capability in SOD323F

(SC-90)

- Low power applications, e.g. in control units

- Free wheeling diode for inductive loads in

relays and motors

- Low losses over the entire current range

- Improved current handling capability

- Increased performance from small-signal

discrete footprints

- Reverse polarity protection, e.g. in car

multimedia applications

SOT457 (SC-74)

SOT23

SOD123F

SOD323F (SC-90)

I_Rmax. (µA) @

I_Fmax. (A)

0.5

V_Rmax. (V)

I_FSM(A)

V_Fmax. (mV)

V_Fmax.

200

150

100

200

390

430

470

500

550

430

560

520

640

660

650

660

550

460

525

620

530

PMEG2005ET

PMEG3005ET

PMEG4005ET

PMEG2005EH

PMEG3005EH

PMEG4005EH

PMEG2010EH

PMEG2005EJ

PMEG3005EJ

PMEG4005EJ

PMEG2010EJ

PMEG2010AEJ

200

150

PMEH2010AEH

PMEG3010EH

17.5

PMEG3010EJ

PMEG3010CEJ

PMEG4010EJ

PMEG6010CEJ

100

PMEG4010EH

350

PMEG6010AED

PMEG2015EH

PMEG3015EH

PMEG1020EH

PMEG2020EH

PMEG3020EH

PMEG1030EH

PMEG2015EJ

PMEG3015EJ

PMEG1020EJ

PMEG2020EJ

PMEG3020EJ

PMEG1030EJ

1.5

1000

3000

200

1000

3000

ESD protection diodes

With their optimized diode structure, Philips’ ESD protection diodes offer a superior size / performance ratio

with outstanding ESD protection of automotive electronics.A wide portfolio is available for protection of all

interfaces in automotive electronics; from general line-protection for engine/body -controllers up to speciﬁc

devices for protection of USB-interfaces or antenna-inputs in car entertainment applications.

Key features

Key beneﬁts

Key applications

- Excellent ESD clamping performance

- Ultra low leakage current

- Low device capacitance

- Optimized diode structure for best-in-class

ESD protection of today’s sensitive

car electronics

- Data and audio interfaces,

e.g. car multimedia line protection

- Overvoltage protection,

e.g. airbag controllers

- ESD protection up to 30 kV

- IEC 61000-4-2, level 4 compliant (8 kV

contact, 15 kV air discharge)

- Low clamping voltages and fast response

times ensure optimal protection

- Ultra low leakage current helps to reduce

overall power consumption

- Car drivers interface protection,

e.g. dashboard panels

- CAN and LIN bus protection

- Low device capacitance keeps unwanted

disturbances in the circuits to a minimum

Number of lines

SOT23

SOD323 (SC-76)

uni-

bi-

I_RMmax. @V_RWM

Conﬁguration

directional

µA

C max. pF

P_PPmax.W

160

0.05

15 V 24 V

PESD1LIN

bra526

0.05

200

PESD1CAN

mse213

0.05

5.25

200

260

180

160

260

180

160

500

200

PESD5V0S2UAT

PESD12VS2UAT

PESD24VS2UAT

PESD5V2S2UT

PESD12VS2UT

PESD24VS2UT

bra004

mse212

PESD5V0L1BA

PESD12VL1BA

PESD24VL1BA

0.05

mse211

PESD1LIN and PESD1CAN

Also speciﬁc automotive devices are available; with the PESD1LIN

Philips offers the best-in-class ESD protection of one LIN bus line.

The asymmetrical diode conﬁguration ensures optimized

electromagnetic immunity of LIN transceivers.The PESD1CAN is

designed to protect two CAN bus lines and can be used for both

high speed CAN bus and the fault-tolerant CAN bus protection.

With the very low C max. of the PESD1CAN the unwanted parasitic

capacitance is reduced to an absolute minimum.

Power Application (e.g. electro motor, inductive loads)

LIN Node

Connector

SPLIT

CANH

Application (e.g. voltage regulator and microcontroller)

T/2

CAN BUS

TRANSCEIVER

BAT

CAN

bus

BAT

LIN

CANL

Common

mode choke

(optional)

24 V

MASTER/SLAVE

15 V

GND

LIN

Transceiver

PESD1LIN

PESD1CAN

bra519

bra328

Small-signal discretes packages for automotive

Series

Philips name Body size (mm) Pins

JEITA

l x w x h

S-mini

SOD323F

SC-90

1.7 x 1.25 x 0.7

ﬂatleads

SOD323

SC-76

1.7 x 1.25 x 0.95

2.6 x 1.6 x 1.1

2.0 x 1.25 x 0.95

2.9 x 1.3 x 1.0

2.9 x 1.5 x 1.15

2.9 x 1.3 x 1.0

2.9 x 1.5 x 1.0

4.5 x 2.5 x 1.25

6.5 x 3.5 x 1.65

SOD123F

ﬂatleads

SOT323

SC-70

SOT353

SC-88A

SOT363

SC-88

Mini

SOT23

SOT346

SC-59

SOT143B

SOT457

SC-74

Medium power SOT89

SC-62

ﬂatleads

3/4

SOT223

SC-73

Philips Semiconductors

Philips Semiconductors is one of the world’s top semiconductor suppliers, with 20 manufacturing and assembly sites and a sales organization that

delivers in 60 countries. For a complete up-to-date list of our sales ofﬁces please visit our website http://www.semiconductors.philips.com/sales

presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without

notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: May 2006

Document order number: 9397 750 15548

Printed in the Netherlands

PUMD17 [NXP]

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SI9130_11

SI9137

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SI9137LG

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