PUMD24 概述
Low VCEsat (BISS) transistors 低VCEsat晶体管( BISS )晶体管 小信号双极晶体管
PUMD24 规格参数
是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-88 | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.37 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR RATIO 1 |
最大集电极电流 (IC): | 0.02 A | 集电极-发射极最大电压: | 50 V |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN AND PNP | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
PUMD24 数据手册
通过下载PUMD24数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Automotive small-signal
discretes solutions
Drive the future with our innovative portfolio
Automotive
Simplifying design through increased functionality
By delivering more functionality from individual products, we help to
cut development times.With just a few small-signal discretes several
circuit blocks can be build and therewith the number of different
components on the bill-of-materials can be reduced significantly.
Our small-signal discretes portfolio offers power and performance
levels previously only associated with much larger packages allowing
you to replace medium-power products with more compact
alternatives. And because you can now get high-performance
transistors and diodes in low-cost small-signal packages, you can
significantly cut costs.Whether it’s superior ESD protection or
loadswitch functionality integrated into a single component,
our portfolio makes it easier to design a new system.
2
small-signal discretes solutions
As automotive manufacturers strive to enhance safety, performance, comfort and
fuel-efficiency levels, the semiconductor content of vehicles is rising and electronic
systems are becoming more complex. Consequently, system suppliers must meet
increasingly severe requirements. Building on our expertise in both automotive
and small-signal discretes solutions, Philips offers an extensive portfolio of discrete
components that help suppliers meet the rigorous and diverse technical demands
on automotive electronics.The wide portfolio enables automotive designers to be
flexible in their designs. By means of integrated products the component count is
decreased and thus costs can be reduced.
All our new products are released in the well-known SOT23 package,
as well as in smaller packages like SOT323 (SC-70), SOD323 (SC-76)
and SOD323F (SC-90).To support the trend towards integration also
multiple transistors and diodes are available integrated into just a
single package like SOT457 (SC-74) and SOT363 (SC-88).
Key families
- LowVCEsat (BISS) transistors
- Resistor-equipped transistors (RETs)
- Complex discretes
• BISS Loadswitches
• Matched pair transistors
• MOSFET drivers
Philips has all the technologies in place to lead the way in small-signal
discretes products, allowing to develop automotive applications that
will drive the future.
- LowVF (MEGA) Schottky rectifiers
- ESD protection diodes
Key benefits
- More power
- Lower costs
- More functionality
- Improved reliability
- Automotive packages
3
LowVCEsat (BISS) transistors
V
CC
These Breakthrough In Small-Signal (BISS) transistors offer best-in-class
efficiency, therefore getting the heat out of your applications.These cost-effective
alternatives to medium-power transistors deliver 1 – 5 A capability in SOT223
(SC-73), SOT89 (SC-62), SOT23 or SOT457 (SC-74).
CONTROLLER
MSD923
DC/DC converter
Key features
Key benefits
Key applications
- Reduced thermal and electrical resistance
- Up to 5 A collector current capability IC
- Up to 10 A peak collector current ICM
- High performance to boardspace ratio
- High current gain hFE - even at high IC
- Extensive range of products available
- Less heat generation and therefore use at
high ambient temperatures possible
- Cost effective replacement of medium
power transistors
- Applications where heat is a concern
(e.g. engine- or dashboard mounted
components)
- High and low side switches, e.g. in control
units
- Increased performance from small-signal
discrete footprints
- Drivers in low supply voltage applications,
e.g. fans, motors
- Inductive load drivers, e.g. relays, buzzers
- MOSFET drivers
Less heat generation with BISS transistors
SOT223: IC = 1.55 A; IB = 0.1 A; PCB FR4 + 1 cm2 Cu
BCP51,Tj = 130°C
PBSS9110Z,Tj = 103°C
PBSS5350Z,Tj= 60°C
PBSS5540Z,Tj = 45°C
SOT223 (SC-73)
SOT89 (SC-62)
SOT23
SOT457 (SC-74)
Ptot 2000 mW
Ptot 1300 mW
Ptot 480 mW
Ptot 750 mW
IC (A)
1.0
VCEO (V)
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
30
40
60
100
30
40
50
20
30
50
60
80
100
40
80
20
PBSS4130T
PBSS4140T
PBSS4160T
PBSS8110T
PBSS4230T
PBSS4240T
PBSS4350T
PBSS5130T
PBSS5140T
PBSS5160T
PBSS9110T
PBSS5230T
PBSS5240T
PBSS5350T
PBSS4140DPN (NPN/PNP)
PBSS8110D PBSS9110D
PBSS4240DPN (NPN/PNP)
PBSS8110Z
PBSS9110Z
2.0
3.0
PBSS4250X
PBSS4320X
PBSS4330X
PBSS4350X
PBSS5250X
PBSS5320X
PBSS5330X
PBSS5350X
PBSS4350Z
PBSS4540Z
PBSS5350Z
PBSS5540Z
PBSS4350D
PBSS303ND
PBSS304ND
PBSS305ND
PBSS4440D
PBSS5350D
PBSS303PD
PBSS304PD
PBSS305PD
PBSS5440D
PBSS4540X
PBSS4480X
PBSS4520X
PBSS5540X
PBSS5480X
PBSS5520X
4.0
5.0
4
power
supply
Resistor-equipped transistors (RETs)
R4
R3
R1
control
input
Developed especially for the automotive sector, 500 mA RETs combine a transistor
with two resistors to provide an optimal integrated solution for digital applications in
automotive systems,for example control units. Also an extensive portfolio with single
and double 100 mA RETs is available for standard small-signal digital applications.
Tr2
Tr1
R
R2
load
bra182
High side switch
Key features
Key benefits
Key applications
-Transistor and two resistors integrated in
one package
- Lower handling and inventory costs
- Reduced boardspace requirements
- Digital applications
- Switching loads, e.g. for instrument clusters
- Controlling IC inputs, e.g. in engine
control units
- Initial 500 mA portfolio with several resistor - Shorter assembly times and reduced
combinations in SOT23 and SOT346 (SC-59A)
- Further resistor combinations and double
versions are planned
pick-and-place efforts
- Simpler design process
- Increased end product reliability due to
fewer soldering points
500 mA RETs
SOT23
SOT346 (SC-59A)
IC max. (mA)
500
VCEO max. (V)
50
R1 (kΩ)
R2 (kΩ)
NPN
PNP
NPN
PNP
1
1
PDTD113ET
PDTD123ET
PDTD113ZT
PDTD123YT
PDTB113ET
PDTB123ET
PDTB113ZT
PDTB123YT
PDTD113EK
PDTD123EK
PDTD113ZK
PDTD123YK
PDTB113EK
2.2
1
2.2
10
10
PDTB123EK
PDTB113ZK
PDTB123YK
2.2
100 mA RETs
SOT23
SOT323 (SC-70)
SOT363 (SC-88)
Configuration
IC max. (mA)
single
double
VCEO max. (V)
R1 (kΩ) R2 (kΩ)
NPN
PNP
NPN
PNP
NPN/NPN
PUMH20
PUMH15
PUMH11
PUMH1
NPN/PNP
PNP/PNP
2.2
4.7
10
2.2
4.7
10
22
47
100
10
47
10
47
47
47
10
22
-
PDTC123ET
PDTC143ET
PDTC114ET
PDTC124ET
PDTC144ET
PDTC115ET
PDTC123YT
PDTC123JT
PDTC143XT
PDTC143ZT
PDTC114YT
PDTC124XT
PDTC144VT
PDTA123ET
PDTA143ET
PDTA114ET
PDTA124ET
PDTA144ET
PDTA115ET
PDTA123YT
PDTA123JT
PDTA143XT
PDTA143ZT
PDTA114YT
PDTA124XT
PDTA144VT
PDTC123EU
PDTC143EU
PDTC114EU
PDTC124EU
PDTC144EU
PDTC115EU
PDTC123YU
PDTC123JU
PDTC143XU
PDTC143ZU
PDTC114YU
PDTC124XU
PDTC144VU
PDTA123EU
PDTA143EU
PDTA114EU
PDTA124EU
PDTA144EU
PDTA115EU
PDTA123YU
PDTA123JU
PDTA143XU
PDTA143ZU
PDTA114YU
PDTA124XU
PDTA144VU
PUMD20
PUMD15
PUMD3
PUMB20
PUMB15
PUMB11
PUMB1
22
PUMD2
47
PUMH2
PUMD12
PUMD24
PUMB2
100
2.2
2.2
4.7
4.7
10
PUMH24
PUMB24
PUMH10
PUMH18
PUMH13
PUMH9
PUMD10
PUMD18
PUMD13
PUMD9
PUMB10
PUMB18
PUMB13
PUMB9
100
50
22
PUMH16
PUMD16
PUMB16
47
47
PDTC144WT PDTA144WT
PDTC144WU PDTA144WU
PUMH17
PUMH30
PUMH7
PUMD17
PUMD30
PUMD6
PUMB17
PUMB30
PUMB3
2.2
4.7
10
PDTC123TT
PDTC143TT
PDTC114TT
PDTC124TT
PDTC144TT
PDTC115TT
PDTA123TT
PDTA143TT
PDTA114TT
PDTA124TT
PDTA144TT
PDTA115TT
PDTC123TU
PDTC143TU
PDTC114TU
PDTC124TU
PDTC144TU
PDTC115TU
PDTA123TU
PDTA143TU
PDTA114TU
PDTA124TU
PDTA144TU
PDTA115TU
-
-
PUMH4
PUMD4
PUMB4
22
-
PUMH19
PUMH14
PUMD19
PUMD14
PUMB19
PUMB14
47
-
100
-
5
BISS Loadswitches
Tr1
Low V
CEsat
(BISS)
Power
supply
Load
Combining a BISS transistor with a RET, BISS Loadswitches provide full
miniature loadswitch functionality in a single package and deliver
best-in-class performance.
R2
R1
Tr2
(RET)
Control
input
Key features
Key benefits
- BISS transistor and RET in one package
- Low “threshold” voltage (< 1V) compared
to MOSFET
- Integrated on-the-shelve solution for
switching loads
MSE336
GND
• Saves design and sourcing costs
• Reduction in boardspace requirements
• Just one or two external resistors needed
for full loadswitch capability
- Combination of low voltage drop and low
base drive current
Loadswitch
- Small drive power required
- Best-in-class performance for loadswitches
- Available for switching loads of 0.5 – 1 A
Key applications
- Supply line switches, e.g. in control units
- Control of lamps, motors and switches,
e.g. instrument clusters
• BISS transistor in the power path provides - High side switches for drivers
the lowest energy-losses
• RET in the control path provides a low
base drive current
SOT457 (SC-74)
SOT363 (SC-88)
IC (A)
VCEO (V)
VCEsat (mV)
@ 500 mA
R1 = R2 (kΩ)
2.2
4.7
10
22
47
2.2
4.7
10
22
47
2.2
4.7
10
22
47
PBLS4001Y
PBLS4002Y
PBLS4003Y
PBLS4004Y
PBLS4005Y
0.5
40
350
170
180
PBLS4001D
PBLS4002D
PBLS4003D
PBLS4004D
PBLS4005D
PBLS6001D
PBLS6002D
PBLS6003D
PBLS6004D
PBLS6005D
40
60
1.0
6
R
sense
V
in
V
out
Matched pair transistors
Matched pair transistors are double transistors with matched current gain
hFE1/hFE2 and matched base-emitter voltageVBE1 -VBE2.The optimal product for the
most common applications is offered by means of several matching-categories
and different pinning options. Internally the transistors are fully isolated.
V
sense
Current sensor using
matched pairs
MSE265
Key features
Key benefits
Key applications
- Current gain matching:
hFE1/hFE2 = 0.7,0.9,0.95,0.98
- Base-emitter voltage matching:
VBE1 -VBE2 = 2 mV
- Improved performance of current mirror
and differential amplifier circuits
- Drop-in replacement for standard double
transistors (BCM-series)
- Current mirror e.g. for current
measurement or to drive LED’s with a
constant current
- Differential amplifier e.g. sensor
signal amplification
- Standard double transistor pin-out for
BCM-types
- Simplified board layout (PMP-series)
- Eliminates need for costly
additional trimming
- Comparator e.g. for DC/DC converters
- Application optimized pin-out for all
PMP-types
- Common emitter configuration for
5pin PMP-types
SOT143B
SOT457 (SC-74) SOT353 (SC-88A) SOT363 (SC-88)
Ptot max.
250 mW
380 mW
300 mW
300 mW
Polarity
IC (mA)
100
VCEO (V)
30
hFE min.
110
hFE max.
800
hFE1/hFE2 VBE1 -VBE2 (mV)
0.7
0.9
n.a.
2
BCV61/A/B/C
BCM61B
NPN
0.9
2
BCM847DS
BCM847BS
45
30
45
200
110
200
450
800
450
0.95
0.98
0.7
2
PMP4501G
PMP4501Y
PMP4201Y
2
PMP4201G
n.a.
2
BCV62/A/B/C
BCM62B
0.9
PNP
100
0.9
2
BCM857DS
BCM857BS
PMP5501Y
PMP5201Y
0.95
0.98
2
PMP5501G
PMP5201G
2
7
MOSFET drivers
Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET
driving functionality.With a choice of configurations Philips offers solutions to take load from the driving circuit,
improve the efficiency of the MOSFET and enable design flexibility.
Key features
Key benefits
Key applications
- Complete MOSFET driving functionality in
one package
- Improved MOSFET efficiency by
• Minimizing rise and fall time
• Fast gate (dis-)charge of the driven
MOSFET
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver
- Several configurations available
-Takes load from the driving circuit
and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
the MOSFET do not have to be placed as
close as possible anymore
- Cost-effective alternative to IC-solutions
SOT457 (SC-74)
SOT346 (SC-59A)
SOT457 (SC-74)
SOT457 (SC-74)
6
3
2, 3
Tr1
3
3
R
D1
ext
2
Tr1
2
Tr1
2
Tr2
4,
5
D1
1
4
1
6
Tr1
Tr2
5
1
D1
Configuration
Ptot max.
D1
R1
Tr2
3
Tr1
Tr3
R2
1
1
5, 6
bra841
4
bra837
bra838
bra839
2
bra840
600 mW
PMD9050D
250 mW
600 mW
600 mW
Contains
IC (A)
0.1
ICM (A)
0.2
R1 = R2 (kΩ)
PMD4001K (NPN)
PMD5001K (PNP)
-
PMD9010D
PMD9001D
PMD9002D
PMD9003D
2.2
4.7
10
General purpose transistors
Switching transistors -
PMD4002K (NPN)
PMD5002K (PNP)
PMD2001D
0.6
1.0
1.2
2.0
reduced storage time
LowVCEsat (BISS) transistors -
PMD4003K (NPN)
PMD5003K (PNP)
PMD3001D
LowVCEsat, high hFE and IC
Release mid 2006
8
LowVF (MEGA) Schottky rectifiers
Maximum Efficiency General Application (MEGA) Schottky rectifiers offer
extremely low forward voltage drop during operation, resulting in the
highest efficiency and reduced heat dissipation.They are ideal, cost-effective
replacements for rectifiers in SMA or SOD123.
Key features
Key benefits
Key applications
- Ultra low forward voltage dropVF
- Up to 3 A continuous current capability IF
- Up to 10 A peak current capability IFSM
- Low power dissipation
- Less heat generation and therefore
increased reliability
- Power management circuits – especially
DC/DC conversion
- Cost effective replacement of SMA and
SOD123 rectifiers
-Various rectifier circuits, e.g. in airbag
control units
- Integrated guard ring for stress protection
• Reduced boardspace requirements
• Medium power capability in SOD323F
(SC-90)
- Low power applications, e.g. in control units
- Free wheeling diode for inductive loads in
relays and motors
- Low losses over the entire current range
- Improved current handling capability
- Increased performance from small-signal
discrete footprints
- Reverse polarity protection, e.g. in car
multimedia applications
SOT457 (SC-74)
SOT23
SOD123F
SOD323F (SC-90)
IR max. (µA) @
IF max. (A)
0.5
VR max. (V)
IFSM (A)
6
VF max. (mV)
VF max.
200
150
100
200
70
20
30
40
390
430
470
500
550
430
560
520
640
660
650
660
550
460
525
620
530
PMEG2005ET
PMEG3005ET
PMEG4005ET
PMEG2005EH
PMEG3005EH
PMEG4005EH
PMEG2010EH
PMEG2005EJ
PMEG3005EJ
PMEG4005EJ
PMEG2010EJ
PMEG2010AEJ
10
10
9
20
10
9
200
150
50
PMEH2010AEH
PMEG3010EH
30
30
40
10
10
10
10
17.5
9
PMEG3010EJ
PMEG3010CEJ
PMEG4010EJ
PMEG6010CEJ
1
100
50
PMEG4010EH
60
350
70
PMEG6010AED
20
30
10
20
30
10
PMEG2015EH
PMEG3015EH
PMEG1020EH
PMEG2020EH
PMEG3020EH
PMEG1030EH
PMEG2015EJ
PMEG3015EJ
PMEG1020EJ
PMEG2020EJ
PMEG3020EJ
PMEG1030EJ
1.5
9
1000
3000
200
1000
3000
9
2
3
9
9
9
9
ESD protection diodes
With their optimized diode structure, Philips’ ESD protection diodes offer a superior size / performance ratio
with outstanding ESD protection of automotive electronics.A wide portfolio is available for protection of all
interfaces in automotive electronics; from general line-protection for engine/body -controllers up to specific
devices for protection of USB-interfaces or antenna-inputs in car entertainment applications.
Key features
Key benefits
Key applications
- Excellent ESD clamping performance
- Ultra low leakage current
- Low device capacitance
- Optimized diode structure for best-in-class
ESD protection of today’s sensitive
car electronics
- Data and audio interfaces,
e.g. car multimedia line protection
- Overvoltage protection,
e.g. airbag controllers
- ESD protection up to 30 kV
- IEC 61000-4-2, level 4 compliant (8 kV
contact, 15 kV air discharge)
- Low clamping voltages and fast response
times ensure optimal protection
- Ultra low leakage current helps to reduce
overall power consumption
- Car drivers interface protection,
e.g. dashboard panels
- CAN and LIN bus protection
- Low device capacitance keeps unwanted
disturbances in the circuits to a minimum
Number of lines
SOT23
SOD323 (SC-76)
uni-
bi-
1
IRM max. @VRWM
Configuration
directional
µA
V
C max. pF
13
PPP max.W
160
0.05
15
15 V 24 V
1
2
PESD1LIN
bra526
0.05
0.05
24
24
1
2
3
2
17
200
PESD1CAN
mse213
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
0.05
0.05
1
5
12
24
5.25
12
24
5
200
75
50
200
75
50
65
13
9
260
180
160
260
180
160
500
200
200
PESD5V0S2UAT
PESD12VS2UAT
PESD24VS2UAT
PESD5V2S2UT
PESD12VS2UT
PESD24VS2UT
1
3
2
bra004
1
2
3
1
1
mse212
1
PESD5V0L1BA
PESD12VL1BA
PESD24VL1BA
1
2
0.05
0.05
12
24
mse211
10
PESD1LIN and PESD1CAN
Also specific automotive devices are available; with the PESD1LIN
Philips offers the best-in-class ESD protection of one LIN bus line.
The asymmetrical diode configuration ensures optimized
electromagnetic immunity of LIN transceivers.The PESD1CAN is
designed to protect two CAN bus lines and can be used for both
high speed CAN bus and the fault-tolerant CAN bus protection.
With the very low C max. of the PESD1CAN the unwanted parasitic
capacitance is reduced to an absolute minimum.
Power Application (e.g. electro motor, inductive loads)
LIN Node
Connector
SPLIT
CANH
Application (e.g. voltage regulator and microcontroller)
R
R
T/2
T/2
CAN BUS
TRANSCEIVER
C
BAT
CAN
bus
BAT
LIN
CANL
Common
mode choke
(optional)
24 V
2
1
C
MASTER/SLAVE
15 V
GND
C
G
LIN
Transceiver
PESD1LIN
PESD1CAN
3
bra519
bra328
Small-signal discretes packages for automotive
Series
Philips name Body size (mm) Pins
JEITA
l x w x h
S-mini
SOD323F
SC-90
1.7 x 1.25 x 0.7
2
flatleads
2
SOD323
SC-76
1.7 x 1.25 x 0.95
2.6 x 1.6 x 1.1
2.0 x 1.25 x 0.95
2.0 x 1.25 x 0.95
2.0 x 1.25 x 0.95
2.9 x 1.3 x 1.0
2.9 x 1.5 x 1.15
2.9 x 1.3 x 1.0
2.9 x 1.5 x 1.0
4.5 x 2.5 x 1.25
6.5 x 3.5 x 1.65
SOD123F
2
flatleads
3
SOT323
SC-70
SOT353
SC-88A
SOT363
SC-88
5
6
3
3
4
6
Mini
SOT23
SOT346
SC-59
SOT143B
SOT457
SC-74
Medium power SOT89
3
SC-62
flatleads
3/4
SOT223
SC-73
11
Philips Semiconductors
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Date of release: May 2006
Document order number: 9397 750 15548
Printed in the Netherlands
PUMD24 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
MUN5313DW1T1G | ONSEMI | Dual Bias Resistor Transistors | 功能相似 |
PUMD24 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
PUMD24,115 | NXP | PEMD24; PUMD24 - NPN/PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm TSSOP 6-Pin | 获取价格 | |
PUMD24/T1 | NXP | TRANSISTOR 20 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal | 获取价格 | |
PUMD24/T2 | NXP | TRANSISTOR 20 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal | 获取价格 | |
PUMD2T/R | NXP | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal | 获取价格 | |
PUMD3 | NXP | NPN/PNP resistor-equipped transistors | 获取价格 | |
PUMD3 | NEXPERIA | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩProduction | 获取价格 | |
PUMD3,125 | NXP | PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin | 获取价格 | |
PUMD3,135 | NXP | PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin | 获取价格 | |
PUMD3,165 | NXP | PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin | 获取价格 | |
PUMD3-Q | NEXPERIA | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩProduction | 获取价格 |
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