PUMH20/T2 [NXP]
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal;型号: | PUMH20/T2 |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总9页 (文件大小:54K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PEMH20; PUMH20
NPN/NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 03 — 14 February 2005
Product data sheet
1. Product profile
1.1 General description
NPN/NPN resistor-equipped transistors.
Table 1:
Product overview
Type number
Package
Philips
NPN/PNP
complement
PNP/PNP
complement
JEITA
-
PEMH20
PUMH20
SOT666
SOT363
PEMD20
PUMD20
PEMB20
PUMB20
SC-88
1.2 Features
■ Built-in bias resistors
■ Simplifies circuit design
■ Reduces component count
■ Reduces pick and place costs
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
Max
50
Unit
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
V
-
-
100
2.86
1.2
mA
kΩ
R1
1.54
0.8
2.2
1
R2/R1
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3:
Pinning
Pin
1
Description
Simplified outline
Symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
R2
4
TR2
5
TR1
1
2
3
6
001aab555
R2
R1
1
2
3
sym063
3. Ordering information
Table 4:
Ordering information
Type number Package
Name
Description
Version
SOT666
SOT363
PEMH20
PUMH20
-
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SC-88
4. Marking
Table 5:
Marking codes
Type number
PEMH20
Marking code[1]
6K
PUMH20
H7*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
2 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
open emitter
open base
-
-
-
50
50
10
V
V
V
collector-emitter voltage
emitter-base voltage
input voltage
open collector
positive
-
-
-
-
+12
−10
100
100
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
SOT363
mA
mA
ICM
Ptot
Tamb ≤ 25 °C
[1]
-
200
mW
mW
°C
[1] [2]
SOT666
-
200
Tstg
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
Tj
°C
Tamb
−65
+150
°C
Per device
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
-
300
300
mW
mW
[1] [2]
SOT666
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
3 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7:
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
SOT363
SOT666
-
-
-
-
625
625
K/W
K/W
[1] [2]
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1] [2]
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Per transistor
ICBO
Min
Typ
Max
Unit
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
2
mA
mV
hFE
DC current gain
VCE = 5 V; IC = 20 mA
IC = 10 mA; IB = 0.5 mA
30
-
-
-
-
VCEsat
collector-emitter
150
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 1 mA
on-state input voltage VCE = 0.3 V; IC = 20 mA
bias resistor1 (input)
-
1.2
1.6
2.2
1
0.5
-
V
2
V
1.54
0.8
-
2.86
1.2
2.5
kΩ
R2/R1
Cc
bias resistor ratio
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
pF
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
4 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
006aaa015
006aaa014
3
3
10
10
h
FE
(1)
(2)
(3)
V
CEsat
(mV)
2
10
2
10
(1)
(2)
(3)
10
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa016
006aaa017
2
10
10
V
I(on)
(V)
V
I(off)
(V)
10
(1)
(2)
1
(3)
(1)
(2)
(3)
1
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
5 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
8. Package outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
04-11-08
Dimensions in mm
04-11-08
Fig 5. Package outline SOT363 (SC-88)
Fig 6. Package outline SOT666
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
Packing quantity
3000
-
4000
8000
10000
PEMH20
PUMH20
SOT666
SOT363
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-
-315
-
-
-115
-
-
-
-
[2]
[3]
-115
-125
-
-
-135
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
6 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
Supersedes
PEMH20_PUMH20_3 20050214
Product data sheet
-
9397 750 14425 PUMH20_2
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Type PEMH20 added
• Table 8 “Characteristics” Vi(on) and Vi(off) redefined to VI(on) and VI(off)
• Figure 1, 2, 3 and 4 added
• Section 9 “Packing information” added
PUMH20_2
PUMH20_1
20040414
Product specification
-
9397 750 13089 PUMH20_1
9397 750 11894
20031016
Product specification
-
-
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
7 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14425
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 — 14 February 2005
8 of 9
PEMH20; PUMH20
Philips Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Contact information . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 14 February 2005
Document number: 9397 750 14425
Published in The Netherlands
相关型号:
PUMH24/T2
TRANSISTOR 20 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
PUMH2T/R
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
PUMH30,115
PEMH30; PUMH30 - NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TSSOP 6-Pin
NXP
PUMH4,115
PEMH4; PUMH4 - NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open TSSOP 6-Pin
NXP
PUMH4T/R
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明