PUMH4 [NXP]
NPN resistor-equipped double transistor; NPN电阻配备双晶体管型号: | PUMH4 |
厂家: | NXP |
描述: | NPN resistor-equipped double transistor |
文件: | 总8页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
PUMH4
NPN resistor-equipped double
transistor
Product specification
1999 May 20
Supersedes data of 1998 Aug 10
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
FEATURES
• Transistors with built-in bias resistor R1
(typ. 10 kΩ)
6
5
4
handbook, halfpage
• No mutual interference between the transistors
• Simplification of circuit design
6
5
2
4
3
R1
• Reduces number of components and board space.
TR2
TR1
R1
APPLICATIONS
1
• Especially suitable for space reduction in interface and
driver circuits
Top view
1
2
3
MAM380
• Inverter circuit configurations without use of external
resistors.
Fig.1 Simplified outline (SC-88) and symbol.
DESCRIPTION
NPN resistor-equipped double transistor in an SC-88
(SOT363) plastic package.
PINNING
PIN
1, 4
2, 5
6, 3
DESCRIPTION
TR1; TR2
TR1; TR2
1
3
emitter
base
2
collector TR1; TR2
MGA893 - 1
MARKING
TYPE NUMBER
MARKING CODE
Fig.2 Equivalent inverter symbol.
PUMH4
Ht4
1999 May 20
2
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
VCEO
VEBO
IO
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
open emitter
−
−
−
−
−
−
50
V
V
V
open base
50
open collector
5
100
100
200
+150
150
+150
mA
mA
mW
°C
ICM
peak collector current
total power dissipation
storage temperature
Ptot
Tamb ≤ 25 °C; note 1
Tstg
Tj
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
−
300
mW
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
416
K/W
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor
ICBO
ICEO
collector cut-off current
collector cut-off current
IE = 0; VCB = 50 V
−
−
100
1
nA
µA
µA
nA
IB = 0; VCE = 30 V
−
−
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
−
50
100
−
IEBO
hFE
emitter cut-off current
DC current gain
−
−
IC = 1 mA; VCE = 5 V
200
−
−
VCEsat
R1
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA
input resistor
−
150
13
2.5
mV
kΩ
pF
7
10
−
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1999 May 20
3
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
MGM902
MGM901
(1)
−1
10
600
handbook, halfpage
handbook, halfpage
(1)
(2)
(3)
h
FE
V
CEsat
(V)
400
200
0
(2)
(3)
−2
10
−1
2
−1
2
10
1
10
10
10
1
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 10.
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1999 May 20
4
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
1999 May 20
5
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 20
6
Philips Semiconductors
Product specification
NPN resistor-equipped double transistor
PUMH4
NOTES
1999 May 20
7
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 20
Document order number: 9397 750 05876
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