PUMH9,135 [ETC]
TRANS 2NPN PREBIAS 0.3W 6TSSOP;型号: | PUMH9,135 |
厂家: | ETC |
描述: | TRANS 2NPN PREBIAS 0.3W 6TSSOP 开关 光电二极管 晶体管 |
文件: | 总18页 (文件大小:785K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PEMH9; PIMH9; PUMH9
NPN/NPN resistor-equipped transistors;
R1 = 10 k, R2 = 47 k
Rev. 5 — 12 November 2013
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Type number Package
NXP
PNP/PNP
complement
NPN/PNP
complement
Package
configuration
JEITA
PEMH9
PIMH9
PUMH9
SOT666
-
PEMB9
-
PEMD9
-
ultra small and flat lead
small
SOT457 SC-74
SOT363 SC-88
PUMB9
PUMD9
very small
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Simplifies circuit design
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO
IO
collector-emitter voltage open base
output current
-
-
50
V
-
-
100
13
mA
k
R1
bias resistor 1 (input)
bias resistor ratio
7
10
4.7
R2/R1
3.7
5.7
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2. Pinning information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
R2
4
TR2
5
TR1
1
2
3
6
R2
R1
001aab555
1
2
3
sym063
3. Ordering information
Table 4.
Ordering information
Type number Package
Name
Description
plastic surface-mounted package; 6 leads
Version
SOT666
SOT457
SOT363
PEMH9
PIMH9
PUMH9
-
SC-74
SC-88
plastic surface-mounted package (TSOP6); 6 leads
plastic surface-mounted package; 6 leads
4. Marking
Table 5.
Marking codes
Type number
PEMH9
Marking code[1]
H9
PIMH9
H9
PUMH9
H*9
[1] * = placeholder for manufacturing site code
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
2 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
open emitter
open base
-
-
-
50
50
6
V
V
V
collector-emitter voltage
emitter-base voltage
input voltage
open collector
positive
-
-
-
-
+40
6
V
negative
V
IO
output current
100
100
mA
mA
ICM
peak collector current
single pulse;
tp 1 ms
Ptot
total power dissipation
PEMH9 (SOT666)
PIMH9 (SOT457)
PUMH9 (SOT363)
Tamb 25 C
[1]
[1]
[1]
-
-
200
250
200
mW
mW
mW
Per device
Ptot
total power dissipation
PEMH9 (SOT666)
PIMH9 (SOT457)
Tamb 25 C
[1]
[1]
[1]
-
300
mW
mW
mW
C
400
PUMH9 (SOT363)
junction temperature
ambient temperature
storage temperature
-
300
Tj
-
150
Tamb
Tstg
55
65
+150
+150
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
3 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
006aac766
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) SOT457; FR4 PCB, standard footprint
(2) SOT363 and SOT666; FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
6. Thermal characteristics
Table 7.
Symbol
Per transistor
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
PEMH9 (SOT666)
PIMH9 (SOT457)
PUMH9 (SOT363)
[1]
[1]
[1]
-
-
-
-
-
-
625
500
625
K/W
K/W
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[1]
[1]
PEMH9 (SOT666)
PIMH9 (SOT457)
PUMH9 (SOT363)
-
-
-
-
-
-
417
313
417
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
4 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
006aac751
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.5
0.2
2
10
0.1
0.02
0
0.05
0.01
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PEMH9 (SOT666); typical values
006aac767
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.2
0.33
2
10
0.1
0.05
0.01
0.02
10
0
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PIMH9 (SOT457); typical values
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
5 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
006aac750
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.5
0.2
2
10
0.1
0.05
0.01
0.02
0
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PUMH9 (SOT363); typical values
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
6 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
-
-
-
-
100
5
nA
current
VCE = 30 V; IB = 0 A;
A
Tj = 150 C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
150
A
hFE
DC current gain
VCE = 5 V; IC = 5 mA
100
-
-
-
-
VCEsat
collector-emitter
IC = 5 mA; IB = 0.25 mA
100
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
VCE = 5 V; IC = 100 A
-
0.7
0.8
10
4.7
-
0.5
-
V
VCE = 0.3 V; IC = 1 mA
1.4
7
V
13
5.7
2.5
k
R2/R1
Cc
3.7
-
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
pF
[1]
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
-
230
-
MHz
[1] Characteristics of built-in transistor
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
7 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
006aac784
006aac785
3
10
1
(1)
h
FE
(2)
V
CEsat
(V)
(3)
2
10
(1)
-1
10
(2)
(3)
10
-2
1
10
10
-1
2
-1
2
1
10
10
10
1
10
10
I
C
(mA)
I (mA)
C
VCE = 5 V
amb = 100 C
IC/IB = 20
(1) Tamb = 100 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac786
006aac787
10
10
V
V
I(on)
I(off)
(V)
(V)
(1)
(1)
1
1
(2)
(2)
(3)
(3)
-1
-1
10
10
-1
2
-1
10
1
10
10
10
1
10
I
C
(mA)
I
C
(mA)
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
(3) Tamb = 100 C
Fig 7. On-state input voltage as a function of
collector current; typical values
Fig 8. Off-state input voltage as a function of
collector current; typical values
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
8 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
006aac788
006aac757
3
3
10
C
c
(pF)
f
T
(MHz)
2
1
0
2
10
10
10
-1
2
0
10
20
30
40
V
50
(V)
1
10
10
I (mA)
C
CB
f = 1 MHz; Tamb = 25 C
VCE = 5 V; Tamb = 25 C
Fig 9. Collector capacitance as a function of
collector-base voltage; typical values
Fig 10. Transition frequency as a function of collector
current; typical values of built-in transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
9 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
9. Package outline
3.1
2.7
1.1
0.9
1.7
1.5
0.6
0.5
6
5
4
6
5
4
0.6
0.2
0.3
0.1
3.0 1.7
2.5 1.3
1.7 1.3
1.5 1.1
pin 1 index
pin 1 index
1
2
3
1
2
3
0.26
0.10
0.18
0.08
0.40
0.25
0.27
0.17
0.95
0.5
1
1.9
Dimensions in mm
04-11-08
Dimensions in mm
04-11-08
Fig 11. Package outline PEMH9 (SOT666)
Fig 12. Package outline PIMH9 (SOT457)
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
06-03-16
Fig 13. Package outline PUMH9 (SOT363)
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
10 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
10. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig 14. Reflow soldering footprint PIMH9 (SOT457)
5.3
1.5
(4×)
solder lands
solder resist
occupied area
1.475
1.475
0.45
(2×)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 15. Wave soldering footprint PIMH9 (SOT457)
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
11 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 16. Reflow soldering footprint PUMH9 (SOT363)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 17. Wave soldering footprint PUMH9 (SOT363)
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
12 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
1.075
1.7
2
(2×)
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Fig 18. Reflow soldering footprint PEMH9 (SOT666)
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
13 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change Supersedes
notice
PEMH9_PIMH9_PUMH9 v.5 20131112
Product data sheet
-
PIMH9_PUMH9_PEMH9 v.4
Modifications:
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 “Product profile”: updated
• Section 4 “Marking”: updated
• Figure 1 to 10: added
• Section 5 “Limiting values”: updated
• Section 6 “Thermal characteristics”: updated
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined
to VI(off) off-state input voltage, ICEO updated, fT added
• Section 8 “Test information”: added
• Section 9 “Package outline”: superseded by minimized package outline drawings
• Section 10 “Soldering”: added
• Section 12 “Legal information”: updated
PIMH9_PUMH9_PEMH9 v.4 20040414
Product data sheet
-
PIMH9_PUMH9_PEMH9 v.3
-
PIMH9_PUMH9_PEMH9 v.3 20030915
Product specification
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
14 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
12.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
15 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PEMH9_PIMH9_PUMH9
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 5 — 12 November 2013
16 of 17
PEMH9; PIMH9; PUMH9
NXP Semiconductors
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 November 2013
Document identifier: PEMH9_PIMH9_PUMH9
相关型号:
PUMH9-Q
50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩProduction
NEXPERIA
PUMH9/T2
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
PUMH9/T3
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
PUML1/DG
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明