PZM3.0NB1 [NXP]
Voltage regulator diodes; 稳压二极管
| 型号： | PZM3.0NB1 |
| 厂家： | 
NXP |
| 描述： | Voltage regulator diodes |
| 文件： | 总12页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PZM-N series
Voltage regulator diodes
1999 Jan 28
Product specification
Supersedes data of 1997 Dec 15
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
FEATURES
PINNING
• Total power dissipation:
max. 300 mW
PIN
DESCRIPTION
1
2
3
anode
• Small plastic package suitable for
surface mounted design
not connected
cathode
• Wide working voltage range:
nom. 2.4 to 75 V (E24 range).
handbook, halfpage
3
APPLICATIONS
• General regulation functions.
2
n.c.
1
DESCRIPTION
3
Low power general purpose voltage
regulator diode in a SOT346 (SC59)
plastic package, suitable for surface
mounted design.
1
2
Top view
MAM378
Fig.1 Simplified outline (SOT346; SC59) and symbol.
MARKING
MARKING CODE
MARKING CODE
TYPE
TYPE
NUMBER
NUMBER
B
B1
B2
B3
B
B1
B2
B3
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10V
11V
12V
13V
−
−
−
PZM15N
PZM16N
PZM18N
PZM20N
PZM22N
PZM24N
PZM27N
PZM30N
PZM33N
PZM36N
PZM39N
PZM43N
PZM47N
PZM51N
PZM56N
PZM62N
PZM68N
PZM75N
−
15V
16V
18V
20V
22V
24V
27V
30V
33V
36V
39V
43V
47V
51V
56V
62V
68V
75V
−
151
161
181
201
221
241
−
152
162
182
202
222
242
−
153
163
183
203
223
243
−
271
301
331
361
391
431
471
511
561
621
681
751
821
911
101
111
121
131
272
302
332
362
392
432
472
512
562
622
682
752
822
912
102
112
122
132
−
−
−
−
−
433
473
513
563
623
683
753
823
913
103
113
123
133
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1999 Jan 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous forward current
non-repetitive peak current
CONDITIONS
MIN.
MAX.
250
see Tables 1 and 2
UNIT
mA
IF
−
IZSM
tp = 100 µs; square wave;
Tamb = 25 °C prior to surge
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb = 25 °C
−
300
mW
°C
−65
−
+150
150
operating junction temperature
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point Ts = 60 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.2
MAX.
UNIT
0.9
1.1
V
V
IF = 100 mA; see Fig.2
IR
reverse current
PZM2.4N
PZM2.7N
PZM3.0N
PZM3.3N
PZM3.6N
PZM3.9N
PZM4.3N
PZM4.7N
PZM5.1N
PZM5.6N
PZM6.2N
PZM6.8N
PZM7.5N
PZM8.2N
PZM9.1N
PZM10N
PZM11N
PZM12N
PZM13N
PZM15N
PZM16N
VR = 1 V
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
nA
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
5
VR = 1 V
3
VR = 1 V
3
VR = 1 V
3
VR = 1.5 V
VR = 2.5 V
VR = 3.0 V
VR = 3.5 V
VR = 4.0 V
VR = 5.0 V
VR = 6.0 V
VR = 7.0 V
VR = 8.0 V
VR = 9.0 V
VR = 10.0 V
VR = 11.0 V
VR = 12.0 V
3
2
2
2
1
700
500
200
100
100
100
70
70
1999 Jan 28
3
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
SYMBOL
PARAMETER
reverse current
CONDITIONS
MAX.
UNIT
IR
PZM18N
PZM20N
PZM22N
PZM24N
PZM27N
PZM30N
PZM33N
PZM36N
PZM39N
PZM43N
PZM47N
PZM51N
PZM56N
PZM62N
PZM68N
PZM75N
VR = 13.0 V
VR = 15.0 V
VR = 17.0 V
VR = 19.0 V
VR = 21.0 V
VR = 23.0 V
VR = 25.0 V
VR = 27.0 V
70
nA
70
70
70
70
70
70
70
50
50
50
50
50
50
50
50
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
VR = 0.7 VZnom
1999 Jan 28
4
Table 1 Per type; PZM2.4N to PZM24N
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP.
COEFF.
SZ (mV/K)
at
DIODE
CAP.
Cd (pF)
at
NON-REPETITIVE
PEAK REVERSE
CURRENT
VZ (V)
at IZ = 5 mA; tm = 40 ms
PZM
IZSM (A)
-XXX
IZ = 5 mA f = 1 MHz;
VR = 0
at tp = 100 µs;
Tamb = 25 °C
B
B1
B2
B3
IZ = 1 mA
IZ = 5 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX.
TYP.
MAX.
MAX.
2.4N
2.7N
3.0N
3.3N
3.6N
3.9N
4.3N
4.7N
5.1N
5.6N
6.2N
6.8N
7.5N
8.2N
9.1N
10N
11N
2.30
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
2.60
2.90
3.20
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
−
−
−
−
−
−
−
−
−
−
−
275
300
325
350
375
400
400
450
500
500
500
500
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
8.00
3.50
3.50
3.50
3.50
3.00
3.00
2.50
2.00
1.50
1.50
1.50
1.25
1.25
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
2.75
3.05
3.35
3.65
3.97
4.21
4.61
5.04
5.55
6.12
6.73
7.36
8.10
8.93
9.87
2.65
2.95
3.25
3.55
3.87
4.15
4.55
4.98
5.49
6.06
6.65
7.28
8.02
8.85
2.90
3.20
3.50
3.80
4.10
4.34
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
−
−
−
−
−
4.28
4.69
5.14
5.67
6.26
6.86
7.52
8.28
9.15
4.48 410
4.90 425
5.37 400
5.92
6.53
7.14
7.84
8.64
9.55
80
40
30
15
20
20
20
25
25
25
25
25
25
30
30
30
2.3
6
3.0
80
2
4.0
80
2
4.6
100
150
150
150
170
200
200
225
225
250
250
2
5.5
9.45 10.55
9.77 10.21 10.11 10.55
2
6.4
10.44 11.56 10.44 10.88 10.76 11.22 11.10 11.56
11.42 12.60 11.42 11.90 11.74 12.24 12.08 12.60
12.47 13.96 12.47 13.03 12.91 13.49 13.37 13.96
13.84 15.52 13.84 14.46 14.34 14.98 14.85 15.52
15.37 17.09 15.37 16.01 15.85 16.51 16.35 17.09
16.94 19.03 16.94 17.70 17.56 18.35 18.21 19.03
18.86 21.08 18.86 19.70 19.52 20.39 20.21 21.08
20.88 23.17 20.88 21.77 21.54 22.47 22.23 23.17
22.93 25.57 22.93 23.96 23.72 24.78 24.54 25.57
2
7.4
12N
13N
15N
16N
18N
20N
22N
24N
2
8.4
2
9.4
3
11.4
12.4
14.4
16.4
18.4
20.4
4
97
4
93
4
88
5
84
6
80
Table 2 Per type; PZM27N to PZM75N
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
rdif (Ω)
TEMP.
COEFF.
SZ (mV/K)
at
DIODE
CAP.
Cd (pF)
at
NON-REPETITIVE
PEAK REVERSE
CURRENT
VZ (V)
at IZ = 2 mA; tm = 40 ms
PZM
IZSM (A)
-XXX
IZ = 2 mA f = 1 MHz;
VR = 0
at tp = 100 µs;
Tamb = 25 °C
B
B1
B2
B3
IZ = 0.5 mA
IZ = 2 mA
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX.
TYP.
MAX.
MAX.
27N
30N
33N
36N
39N
43N
47N
51N
56N
62N
68N
75N
25.10 28.90
28.00 32.00
31.00 35.00
34.00 38.00
37.00 41.00
40.00 46.00
44.00 50.00
48.00 54.00
52.00 60.00
58.00 66.00
64.00 72.00
70.00 79.00
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
35
35
40
40
40
45
45
45
50
60
75
85
250
250
275
300
300
325
325
350
375
400
400
400
8
10
11
15
25
30
30
35
40
50
55
70
40
40
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
73
66
60
59
58
56
55
52
49
44
40
35
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
40
60
75
80
90
110
120
140
160
175
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
GRAPHICAL DATA
MBG781
MBG783
300
0
handbook, halfpage
handbook, halfpage
I
S
Z
(mV/K)
F
4V3
(mA)
200
−1
3V9
3V6
100
−2
3V3
3V0
2V4
2V7
0
0.6
−3
0.8
1.0
0
20
40
60
I
(mA)
V
(V)
Z
F
PZM2.4N to PZM4.3N.
Tj = 25 °C to 150 °C.
Tj = 25 °C.
Fig.2 Forward current as a function of
forward voltage; typical values.
Fig.3 Temperature coefficient as a function of
working current; typical values.
MBG782
MBK204
10
handbook, halfpage
400
handbook, halfpage
12
11
S
Z
P
tot
(mW)
(mV/K)
10
300
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
200
100
0
0
4V7
−5
0
4
8
12
16
20
0
50
100
150
200
I
(mA)
Z
T (°C)
j
PZM4.7N to PZM12N.
Tj = 25 °C to 150 °C.
Fig.4 Temperature coefficient as a function of
working current; typical values.
Fig.5 Power derating curve.
1999 Jan 28
7
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT346
E
A
D
B
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w M
B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
A
p
1
p
1
E
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
1.9
0.95
0.2
0.2
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
SOT346
TO-236
SC-59
1999 Jan 28
8
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 28
9
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
NOTES
1999 Jan 28
10
Philips Semiconductors
Product specification
Voltage regulator diodes
PZM-N series
NOTES
1999 Jan 28
11
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Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 Jan 28
Document order number: 9397 750 04983
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