PZTM1101 [NXP]
NPN transistor/Schottky-diode module; NPN晶体管/肖特基二极管模块
| 型号： | PZTM1101 |
| 厂家： | 
NXP |
| 描述： | NPN transistor/Schottky-diode module |
| 文件： | 总7页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
PZTM1101
NPN transistor/Schottky-diode
module
1996 May 09
Product specification
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
FEATURES
DESCRIPTION
• Low output capacitance
• Fast switching time
Combination of an NPN transistor and a Schottky barrier diode in a plastic
SOT223 package. PNP complement: PZTM1102.
• Integrated Schottky protection
diode.
1
4
handbook, halfpage
APPLICATIONS
• High-speed switching for industrial
applications.
4
2
PINNING
1
2
3
3
PIN
DESCRIPTION
anode Schottky
Top view
MAM236
1
2
3
4
Marking code: TM1101.
base
emitter
Fig.1 Simplified outline (SOT223) and symbol.
collector, cathode Schottky
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
VBE = 0
−
−
−
−
60
V
V
V
40
6
open collector
200
mA
Schottky barrier diode
VR
IF
continuous reverse voltage
−
−
−
−
−
40
1
V
forward current (DC)
average forward current
junction temperature
A
IF(AV)
Tj
1
A
reverse current applied
forward current applied
125
150
°C
°C
Combined device
Ptot
Tamb
Tstg
Tj
total power dissipation
up to Tamb = 25 °C
−
1.2
W
operating ambient temperature
storage temperature
−55
−55
−
+150
+150
150
°C
°C
°C
junction temperature
1996 May 09
2
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
ELECTRICAL CHARACTERISTICS
T
amb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
NPN transistor
V(BR)CBO collector-base breakdown voltage
CONDITIONS
MIN. MAX. UNIT
open emitter; IC = 10 µA; IE = 0;
60
40
6
−
−
−
V
V
V
Tamb = −55 to +150 °C; note 1
V(BR)CES
collector-emitter breakdown voltage open base; IC = 1 mA; VBE = 0;
Tamb = −55 to +150 °C; note 1
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 10 µA; IC = 0;
Tamb = −55 to +150 °C; note 1
ICES
collector-emitter cut-off current
emitter-base cut-off current
VCE = 20 V; VBE = 0
−
−
−
−
100
50
nA
µA
nA
µA
V
CE = 20 V; VBE = 0; Tamb = −55 to +150 °C
VEB = 6 V; IC = 0
EB = 6 V; IC = 0; Tamb = −55 to +150 °C
collector-emitter saturation voltage note 1
IC = 10 mA; IB = 1 mA
IEBO
50
V
10
VCEsat
−
−
200
300
mV
mV
IC = 50 mA; IB = 3.2 mA
collector-emitter saturation voltage Tamb = −55 to +150 °C; note 1
IC = 10 mA; IB = 1 mA
VCEsat
VBEsat
VBEsat
−
−
250
350
mV
mV
IC = 50 mA; IB = 3.2 mA
base-emitter saturation voltage
base-emitter saturation voltage
note 1
IC = 10 mA; IB = 1 mA
−
−
850
950
mV
mV
IC = 50 mA; IB = 5 mA
Tamb = −55 to +150 °C; note 1
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 20 V; f = 100 MHz
VCE = 1 V; note 1
−
1000 mV
1100 mV
−
Cob
Cib
fT
output capacitance
input capacitance
transition frequency
DC current gain
−
4
8
−
pF
−
pF
300
MHz
hFE
IC = 0.1 mA
40
−
IC = 1 mA
70
−
IC = 10 mA
100
30
300
−
IC = 100 mA
hFE
DC current gain
VCE = 1 V; Tamb = −55 to +150 °C; note 1
IC = 10 mA
60
15
500
IC = 100 mA
−
SWITCHING TIMES (see Figs 2 and 3)
td
tr
delay time
rise time
VCC = 5 V
1
5
ns
ns
ns
ns
IC = 50 mA
Vi = 0 to 5 V
16
110
70
31
ts
tf
storage time
fall time
310
100
1996 May 09
3
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Schottky barrier diode
VF
forward voltage
IF = 100 mA; note 1
−
−
−
−
−
−
330
400
500
560
300
mV
mV
mV
mV
µA
IF = 100 mA; Tamb = −55 to +150 °C; note 1
IF = 1 A; note 1
IF = 1 A; Tamb = −55 to +150 °C; note 1
VR = 40 V; note 1
IR
reverse current
VR = 40 V; Tj = 125 °C;
35(2) mA
Tamb = −55 to +150 °C; note 1
IR
reverse current
VR = 10 V; note 1
−
−
40
µA
VR = 10 V; Tj = 125 °C;
15(2) mA
Tamb = −55 to +150 °C; note 1
Cj
junction capacitance
VR = 0 V; f = 1 MHz
−
250
pF
Notes
1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.
2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal
runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with
forward voltage applied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient (combined device) note 1
100
K/W
Note
1. Refer to SOT223 standard mounting conditions.
1996 May 09
4
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
GRAPHICAL DATA
5 V
handbook, halfpage
INPUT
handbook, halfpage
V
= 5 V DC
CC
90 Ω
(1%)
V
i
0 V
t
p
V
(pin 4)
o
V
o
825 Ω (1%)
5 V
0 V
10%
90%
V
DUT
i
OUTPUT
7.5 kΩ
(5%)
5.23 Ω
(1%)
90%
10%
t
t
f
d
MBH220
t
t
r
s
t
MBH221
t
on
off
tr < 5 ns (10% to 90%); tp = 1 µs; δ = 0.02; Zi = 50 Ω.
ton = td + tr; toff = ts + tf.
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
1996 May 09
5
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.4 SOT223.
1996 May 09
6
Philips Semiconductors
Productspecification
NPN transistor/Schottky-diode module
PZTM1101
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 09
7
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