RZ1214B35Y [NXP]
NPN microwave power transistor; NPN微波功率晶体管型号: | RZ1214B35Y |
厂家: | NXP |
描述: | NPN microwave power transistor |
文件: | 总8页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y
NPN microwave power transistor
1997 Feb 18
Product specification
Supersedes data of June 1992
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
FEATURES
PINNING - SOT443A
PIN
• Interdigitated structure provides high emitter efficiency
DESCRIPTION
• Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
1
2
3
collector
emitter
• Gold metallization realizes very stable characteristics
and excellent lifetime
base connected to flange
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Internal input matching ensures good stability and
handbook, halfpage
1
allows an easier design of wideband circuits.
c
APPLICATIONS
b
• Common base class-C wideband pulsed power
amplifiers for L-band radar applications in the
1.2 to 1.4 GHz band.
3
e
2
Top view
MAM314
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class-C wideband amplifier.
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
MODE OF OPERATION
(GHz)
Class-C; tp = 150 µs; δ = 5%
1.2 to 1.4
50
≥35
≥7
≥30
see Fig 4
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
CONDITIONS
open emitter
MIN.
MAX.
65
UNIT
−
−
−
−
−
−
V
V
V
V
A
W
VCEO
VCES
VEBO
IC
open base
15
60
3
RBE = 0 Ω
open collector
tp ≤ 150 µs; δ ≤ 5%≤
collector current (DC)
total power dissipation
3
Ptot
Tmb ≤ 75 °C;
125
tp ≤ 150 µs; δ ≤ 5%
Tstg
Tj
storage temperature
−65
−
+200
200
°C
°C
°C
operating junction temperature
soldering temperature
Tsld
at 0.2 mm from the case;
−
235
t ≤ 10 s
MGD974
150
handbook, halfpage
P
tot
(W)
100
50
0
0
50
100
150
200
(°C)
T
mb
tp = 150 µs; δ = 5%.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
THERMAL CHARACTERISTICS
Tj = 75 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting-base
5
0.2
1
K/W
K/W
K/W
thermal resistance from mounting-base to heatsink note 1
thermal resistance from junction to heatsink
tp = 100 µs; δ = 10 %;
notes 1 and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
CONDITIONS
IC = 20 mA; IE = 0
MIN.
MAX.
UNIT
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
65
60
3
−
−
−
2
V
V
V
IC = 20 mA; RBE = 0
IC = 0; IE = 3 mA
VCB = 50 V; IE = 0
VEB = 1.5 V; IC = 0
−
mA
mA
IEBO
emitter cut-off current
−
0.2
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
CONDITIONS
(GHz)
tp = 150 µs; δ = 5% 1.2 to 1,4
tp = 300 µs; δ = 10% 1.2 to 1,4
50
50
typ.40; >35
typ.40;
typ.7.8; >7
typ.7
typ.35; >35 see Fig 4
typ.35 see Fig 4
Class-C
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
V
CC
11.5
7
5.75
5
5
0.59
0.59
input
output
19.5
100 pF
MGK061
3
8
5
10
5.15
5
8
3
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Wideband test circuit for class C operation at 1.2 to 1.4 GHz.
1
0.5
2
0.2
5
Z
i
10
1.4 GHz
1.2
2
1.3
+ j
– j
0.2
0.5
1
5
10
0
∞
1.2
1.3
Z
10
L
1.4 GHz
5
0.2
2
0.5
MCD626
1
Class C operation; VCE = 50 V; PL = 35 W; Zo = 5 Ω; tp = 150 µs; δ = 5%.
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
5
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
PACKAGE OUTLINE
24 max
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
23
max
10.5
max
3.4
3.2
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
Fig.5 SOT443A.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B35Y
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
7
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp8
Date of release: 1997 Feb 18
Document order number: 9397 750 01727
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