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SA2421DH-T [NXP]

IC DATACOM, WIRELESS LAN CIRCUIT, PDSO24, Network Interface;
SA2421DH-T
型号： SA2421DH-T
厂家： NXP    NXP
描述：

IC DATACOM, WIRELESS LAN CIRCUIT, PDSO24, Network Interface

局域网 电信 信息通信管理 光电二极管 电信集成电路
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INTEGRATED CIRCUITS  
SA2421  
2.45 GHz low voltage RF transceiver  
Product specification  
2000 Mar 13  
Supersedes data of 2000 Feb 11  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
DESCRIPTION  
PIN CONFIGURATION  
The SA2421 transceiver is a combined low–noise amplifier, receive  
DH Package  
mixer, transmit mixer and LO buffer IC designed using a 20 GHz f  
BiCMOS process, QUBiC2, for high–performance low–power  
T
V
GND  
LNA IN  
GND  
1
2
3
4
5
6
7
8
9
24  
23  
22  
21  
20  
19  
CC  
communication systems for 2.4–2.5 GHz applications. The LNA has  
a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3  
intercept of –3 dBm at the input. The wide–dynamic–range receive  
mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at  
2.45 GHz. The nominal current drawn from a single 3 V supply is  
34 mA in transmit mode and 20 mA in receive mode. The SA2421  
differs from the SA2420 by removal of the LO doubler and LO  
switch. The LNA reverse isolation is improved, and a separate pin is  
allocated for the transmit output.  
LNA OUT  
GND  
GND  
ATTEN SW  
GND  
Rx IF OUT  
Rx IF OUT  
Tx IF IN  
Tx IF IN  
GND  
Rx IN  
18 GND  
Tx OUT  
17  
16 GND  
LOP 10  
Tx/Rx  
GND  
15  
14  
13  
FEATURES  
V
LO  
11  
CC  
• Low current consumption: 34 mA nominal transmit mode and  
LOM 12  
CHIP EN  
SR01756  
20 mA nominal receive mode  
• High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz  
• Excellent gain stability versus temperature and supply voltage  
• Separate Rx IN and Tx OUT pins  
Figure 1. Pin configuration  
• Wide IF range: 50–500 MHz  
APPLICATIONS  
• IEEE 802.11 (WLAN)  
• 2.45 GHz ISM band  
• –10dBm typical LO input power  
• Improved LNA reverse isolation S12  
• TSSOP24 package  
ORDERING INFORMATION  
DESCRIPTION  
TEMPERATURE RANGE  
–40°C to +85°C  
ORDER CODE  
DWG #  
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)  
SA2421DH  
SOT355-1  
BLOCK DIAGRAM  
V
LNA  
OUT  
ATTEN  
SW  
CHIP  
EN  
CC  
GND  
22  
GND  
20  
V
LO  
CC  
Rx IN  
19  
GND  
18  
Tx OUT  
17  
GND  
16  
GND  
15  
24  
23  
21  
14  
13  
PRE-DRIVER  
BPF  
ATTENUATOR  
LNA  
RX  
LO  
BUFFER  
RX  
TX  
X1  
1
2
3
4
5
6
7
8
9
10  
11  
12  
GND  
LNA  
IN  
GND  
GND  
Rx IF  
OUT  
Rx IF  
OUT  
Tx IF  
IN  
Tx IF  
IN  
GND  
LOP  
Tx/Rx  
LOM  
SR01757  
Figure 2. SA2421 block diagram  
2
2000 Mar 13  
853-2189 23308  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
UNITS  
V
Supply voltage  
–0.3 to +6  
V
V
CC  
V
Voltage applied to any pin  
–0.3 to (V + 0.3)  
IN  
CC  
Power dissipation, T  
= 25°C (still air)  
amb  
P
D
555  
150  
mW  
°C  
24-Pin Plastic TSSOP  
Maximum operating junction temperature  
Maximum power (RF/IF/LO pins)  
Storage temperature range  
T
JMAX  
P
MAX  
+20  
dBm  
°C  
T
STG  
–65 to +150  
NOTES:  
1. Transients exceeding these conditions may damage the product.  
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may  
impact product reliability θ : 24-Pin TSSOP = 117°C/W  
JA  
3. IC is protected for ESD voltages up to 2000 V, human body model.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
RATING  
2.7 to 5.5  
–40 to +85  
UNITS  
V
V
CC  
Supply voltage  
Operating ambient temperature range  
T
amb  
°C  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3V, T  
= 25°C; unless otherwise stated.  
amb  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
I
Total supply current, Transmit  
Total supply current, Receive  
Tx/Rx = Hi  
22  
34  
42  
mA  
mA  
CCTX  
Tx/Rx mode = Lo,  
LNA = Hi gain  
I
14  
20  
26  
CCRX  
Tx/Rx = GND  
Atten SW = V  
I
Power down mode  
10  
µA  
CC  
CC OFF  
Enable = GND  
Receive mode  
Tx/Rx = Lo  
Tx/Rx = Hi  
Tx/Rx = Hi  
Logic 1  
V
LNA input voltage  
0.855  
V
V
LNA-IN  
V
LO buffer DC input voltage  
Tx Mixer input voltage  
Tx Mixer input voltage  
–0.1  
V
CC  
LO GHz  
V
1.7  
1.7  
6
V
TX IF  
V
V
TX IFB  
µA  
µA  
I
Input bias current  
BIAS  
Logic 0  
0
3
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
AC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3 V, T  
= 25°C; LO = –10 dBm @ 2.1 GHz; f = 2.45 GHz; unless otherwise stated.  
amb  
IN  
RF  
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX  
MIN  
2.4  
–3σ  
+3σ  
3
f
RF  
RF frequency range  
2.45  
2.5  
GHz  
MHz  
3
f
IF  
IF frequency range  
300  
350  
400  
LNA High gain mode (In = Pin 2; Out = 23)  
S
S
Amplifier gain  
LNA gain = Hi  
LNA gain = Hi  
LNA gain = Hi  
LNA gain = Hi  
LNA gain = Hi  
LNA gain = Hi  
13.3  
14.3  
–32  
–10  
–9  
15.3  
dB  
dB  
21  
Amplifier reverse isolation  
12  
1
S
Amplifier input match  
dB  
11  
22  
1
S
Amplifier output match  
dB  
ISO  
Isolation: LO to LNA  
–43  
–15  
dB  
X
IN  
P
-1dB  
Amplifier input 1dB gain compression  
Amplifier input third order intercept  
Amplifier noise figure (50Ω)  
dBm  
f - f = 1 MHz,  
1
2
IP3  
–4.5  
3.1  
–3.2  
3.2  
–1.9  
3.3  
dBm  
dB  
LNA gain = Hi  
NF  
LNA gain = Hi  
LNA High Overload Mode (low gain mode)  
S
S
Amplifier gain  
LNA gain = Low  
LNA gain = Low  
LNA gain = Low  
LNA gain = Low  
LNA gain = Low  
LNA gain = Low  
–18.5  
–19.4  
–26  
–8  
–20.3  
dB  
dB  
21  
12  
Amplifier reverse isolation  
1
S
Amplifier input match  
dB  
11  
22  
1
S
Amplifier output match  
–8  
dB  
ISO  
Isolation: LO to LNA  
–45  
2
dB  
X
IN  
P
-1dB  
Amplifier input 1dB gain compression  
Amplifier input third order intercept  
Amplifier noise figure (50 Ω)  
dBm  
f – f = 1 MHz,  
1
2
IP3  
18  
dBm  
dB  
LNA gain = Low  
NF  
LNA gain = Low  
18.5  
Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, P = –10 dBm)  
LO  
Power conversion gain into 50 Ω :  
matched to 50 W using external balun  
circuitry.  
f
f
f
= 2.45 GHz,  
= 2.1 GHz,  
S
LO  
PG  
9.5  
10  
10.5  
dB  
C
= 350 MHz  
IF  
1
S
Input match at RF (2.45 GHz)  
–11  
11.2  
–10.5  
2.2  
dB  
dB  
11–RF  
NF  
SSB noise figure (2.45 GHz) (50 Ω)  
Mixer input 1 dB gain compression  
Input third order intercept  
9.8  
1.8  
12.5  
2.6  
M
P
dBm  
dBm  
-1dB  
IP3  
f – f = 1MHz  
1 2  
Rx Mixer Spurious Components (P = P  
)
-1dB  
IN  
4
P
RF-IF  
P
LO-IF  
RF feedthrough to IF  
LO feedthrough to IF  
C = 2 pF per side  
-35  
-32  
dBc  
dBc  
L
5
C = 2 pF per side  
L
4
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
AC ELECTRICAL CHARACTERISTICS (continued)  
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX  
MIN  
Tx Mixer (Tx OUT = Pin 17, IF = Pins 7 and 8, LO = Pin 10 or 12, P = –10 dBm)  
–3σ  
+3σ  
LO  
f
f
f
= 2.45 GHz,  
= 2.1 GHz,  
S
LO  
Power conversion gain: R = 50 Ω  
L
PG  
22.5  
23  
23.5  
dB  
C
R
= 50 Ω  
S
= 350 MHz  
IF  
1
S
Output match at RF (2.45 GHz)  
–10  
11.2  
4.2  
dB  
dB  
11–RF  
NF  
SSB noise figure (2.45 GHz) (50 Ω)  
Output 1dB gain compression  
Output third order intercept  
10.9  
10.1  
11.5  
14.3  
M
P
dBm  
dBm  
-1dB  
IP3  
f – f = 1 MHz  
12.2  
1
2
Tx Mixer Spurious Components (P  
= P  
)
–1dB  
OUT  
4
P
IF feedthrough to RF  
LO feedthrough to RF  
–50  
–22  
–20  
dBc  
dBc  
dBc  
IF-RF  
5
P
LO-RF  
6
P
Image feedthrough to RF  
IMAGE-RF  
LO Buffer  
P
LO drive level  
–15  
1.9  
–10  
–10  
2.1  
–5  
dBm  
dB  
LO IN  
11-LO  
S
Mixer input match (LO = 2.1 GHz)  
3
f
LOG frequency range  
2.3  
GHz  
LOG  
2
Switching  
t
Receive-to-transmit switching time  
Transmit-to-Receive switching time  
Chip enable time  
1
1
1
1
µs  
µs  
µs  
µs  
Rx-Tx  
Tx-Rx  
t
t
POWER UP  
t
Chip disable time  
PWR DWN  
NOTES:  
1. With simple external matching  
2. With 50 pF coupling capacitors on all RF and IF parts  
3. This part has been optimized for the stated frequency range. Operation outside this frequency range may yield performance other than  
specified in this datasheet.  
4. Measured 5dB lower than 1dB compression point, with typical output matching network.  
5. Measured at 1dB compression point.  
6. With typical output matching network (no image reject mixer is used).  
5
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
Table 1. Truth Table  
T
X
Mixer and  
Predriver  
Chip-En  
ATT-SW  
T –R  
Mode  
LNA Gain  
R Mixer  
X
X
X
0
1
1
1
X
1
0
X
X
0
0
1
Sleep  
N/S  
+14.3 dB  
–19 dB  
N/S  
off  
on  
on  
off  
off  
off  
off  
on  
Receive  
Receive  
Transmit  
this option is internal and is controlled externally by high and low  
logic to the pin. When the LNA is switched into the attenuation  
mode, active matching circuitry (on-chip) is switched in (reducing the  
number of off-chip components required). To reduce power  
consumption when the chip is transmitting, the LNA is automatically  
switched into a “sleep” mode (internally) without the use of external  
circuitry.  
FUNCTIONAL DESCRIPTION  
The SA2421 is a 2.45 GHz transceiver front-end available in the  
TSSOP-24 package. This integrated circuit (IC) consists of a low  
noise amplifier (LNA) and up- and down-converters. There is an  
enable/disable switch available to power up/down the entire chip in  
1 µs, typically. This transceiver has several unique features.  
The LNA has two operating modes: 1) high gain mode with a gain =  
+14.3 dB; and 2) low gain mode with a gain –19 dB. The switch for  
6
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
23  
22  
21  
20  
19  
18  
17  
4.0  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
2.7V  
3.0V  
3.8V  
5.5V  
SR02262  
SR02265  
Figure 3. LNA / Receive Supply Current vs Supply Voltage and  
Temperature  
Figure 6. LNA Noise Figure vs Supply Voltage and  
Temperature  
15  
14  
13  
12  
11.5  
10.5  
9.5  
8.5  
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
2.7V  
3.0V  
3.8V  
5.5V  
SR02263  
SR02266  
Figure 4. LNA Gain vs Supply Voltage and Temperature  
Figure 7. RX Gain vs Supply Voltage and Temperature  
3.0  
2.5  
2.0  
1.5  
1
–1.0  
–1.5  
–2.0  
–2.5  
–3.0  
–3.5  
–4.0  
–4.5  
–5.0  
–5.5  
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
SR02267  
2.7V  
3.0V  
3.8V  
5.5V  
SR02264  
Figure 8. Receive Input IP3 vs Supply Voltage and Temp  
Figure 5. LNA Input IP3 vs Supply Voltage and Temperature  
7
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
12.5  
12.0  
11.5  
11.0  
10.5  
10  
29  
27  
25  
23  
21  
19  
17  
15  
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
2.7V  
3.0V  
3.8V  
5.5V  
SR02268  
SR02271  
Figure 9. Receive Noise Figure vs Supply Voltage and Temp  
Figure 12. Transmit Gain vs Supply Voltage and Temp  
–9.0  
–9.5  
20  
18  
16  
14  
12  
10  
8
–10.0  
–10.5  
–11.0  
–11.5  
–12.0  
–12.5  
–13  
6
4
2
0
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
2.7V  
3.0V  
3.8V  
5.5V  
SR02269  
SR02272  
Figure 10. RX 1dB Compression vs Supply Voltage and Temp  
Figure 13. Transmit Output IP3 vs Supply Voltage and Temp  
38  
37  
36  
35  
34  
33  
32  
31  
30  
13.0  
12.5  
12.0  
11.5  
11.0  
10.5  
10.0  
9.5  
9.0  
8.5  
8
–40_C  
0_C  
25_C  
70_C  
85_C  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
2.7V  
3.0V  
3.8V  
5.5V  
2.7V  
3.0V  
3.8V  
5.5V  
SR02270  
SR02273  
Figure 11. Transmit Current vs Supply Voltage and Temp  
Figure 14. Transmit Noise Figure vs Supply Voltage and Temp  
8
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
9
8
12.0  
11.5  
11.0  
10.5  
10.0  
9.5  
7
6
5
4
3
9.0  
2
8.5  
1
8.0  
0
7.5  
–1  
7
–18  
–16  
–14  
–12  
–10  
–8  
–5  
–2  
–40_C  
0_C  
25_C  
70_C  
85_C  
TEMPERATURE (°C)  
LO Input (dBm)  
2.7V  
3.0V  
3.8V  
5.5V  
–40C  
0C  
+25C  
+70C  
+85C  
SR02276  
SR02274  
Figure 15. TX 1dB compression vs Supply Voltage and Temp  
Figure 17. Receive Gain vs LO Input over Temp Range  
–10  
–11  
–12  
–13  
–14  
–15  
–16  
–17  
–18  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
–18  
–16  
–14  
–12  
–10  
–8  
–5  
–2  
–40_C  
25_C  
85_C  
TEMPERATURE (°C)  
LO Input (dBm)  
2.7V  
3.0V  
3.8V  
5.5V  
–40C  
0C  
+25C  
+70C  
+85C  
SR02277  
SR02275  
Figure 16. LNA 1dB compression vs Supply Voltage and Temp  
Figure 18. Transmit Gain vs LO Input over Temp Range  
The Rx IN port is matched to 50 Ω and has an input IP3 of +2.2 dBm  
(mixer only). The down-convert mixer is buffered and has open  
collectors at the pins to allow for matching to common SAW filters.  
The up convert mixer has an input pin to output pin gain of 23 dB.  
The output of the up-converter is designed for a power level =  
+4.2 dBm (P  
).  
–1dB  
9
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
SR01758  
Figure 19.  
10  
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm  
SOT355-1  
11  
2000 Mar 13  
Philips Semiconductors  
Product specification  
2.45 GHz low voltage RF transceiver  
SA2421  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 2000  
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相关型号：

SI9130DB

 5- and 3.3-V Step-Down Synchronous Converters

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SI9135LG-T1

 SMBus Multi-Output Power-Supply Controller

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SI9135LG-T1-E3

 SMBus Multi-Output Power-Supply Controller

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SI9135_11

 SMBus Multi-Output Power-Supply Controller

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SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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