SA2421 [NXP]
2.45 GHz low voltage RF transceiver; 2.45GHz的低电压RF收发器型号: | SA2421 |
厂家: | NXP |
描述: | 2.45 GHz low voltage RF transceiver |
文件: | 总12页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA2421
2.45 GHz low voltage RF transceiver
Product specification
2000 Mar 13
Supersedes data of 2000 Feb 11
Philips
Semiconductors
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
DESCRIPTION
PIN CONFIGURATION
The SA2421 transceiver is a combined low–noise amplifier, receive
DH Package
mixer, transmit mixer and LO buffer IC designed using a 20 GHz f
BiCMOS process, QUBiC2, for high–performance low–power
T
V
GND
LNA IN
GND
1
2
3
4
5
6
7
8
9
24
23
22
21
20
19
CC
communication systems for 2.4–2.5 GHz applications. The LNA has
a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3
intercept of –3 dBm at the input. The wide–dynamic–range receive
mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at
2.45 GHz. The nominal current drawn from a single 3 V supply is
34 mA in transmit mode and 20 mA in receive mode. The SA2421
differs from the SA2420 by removal of the LO doubler and LO
switch. The LNA reverse isolation is improved, and a separate pin is
allocated for the transmit output.
LNA OUT
GND
GND
ATTEN SW
GND
Rx IF OUT
Rx IF OUT
Tx IF IN
Tx IF IN
GND
Rx IN
18 GND
Tx OUT
17
16 GND
LOP 10
Tx/Rx
GND
15
14
13
FEATURES
V
LO
11
CC
• Low current consumption: 34 mA nominal transmit mode and
LOM 12
CHIP EN
SR01756
20 mA nominal receive mode
• High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz
• Excellent gain stability versus temperature and supply voltage
• Separate Rx IN and Tx OUT pins
Figure 1. Pin configuration
• Wide IF range: 50–500 MHz
APPLICATIONS
• IEEE 802.11 (WLAN)
• 2.45 GHz ISM band
• –10dBm typical LO input power
• Improved LNA reverse isolation S12
• TSSOP24 package
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
–40°C to +85°C
ORDER CODE
DWG #
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)
SA2421DH
SOT355-1
BLOCK DIAGRAM
V
LNA
OUT
ATTEN
SW
CHIP
EN
CC
GND
22
GND
20
V
LO
CC
Rx IN
19
GND
18
Tx OUT
17
GND
16
GND
15
24
23
21
14
13
PRE-DRIVER
BPF
ATTENUATOR
LNA
RX
LO
BUFFER
RX
TX
X1
1
2
3
4
5
6
7
8
9
10
11
12
GND
LNA
IN
GND
GND
Rx IF
OUT
Rx IF
OUT
Tx IF
IN
Tx IF
IN
GND
LOP
Tx/Rx
LOM
SR01757
Figure 2. SA2421 block diagram
2
2000 Mar 13
853-2189 23308
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
Supply voltage
–0.3 to +6
V
V
CC
V
Voltage applied to any pin
–0.3 to (V + 0.3)
IN
CC
Power dissipation, T
= 25°C (still air)
amb
P
D
555
150
mW
°C
24-Pin Plastic TSSOP
Maximum operating junction temperature
Maximum power (RF/IF/LO pins)
Storage temperature range
T
JMAX
P
MAX
+20
dBm
°C
T
STG
–65 to +150
NOTES:
1. Transients exceeding these conditions may damage the product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may
impact product reliability θ : 24-Pin TSSOP = 117°C/W
JA
3. IC is protected for ESD voltages up to 2000 V, human body model.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
2.7 to 5.5
–40 to +85
UNITS
V
V
CC
Supply voltage
Operating ambient temperature range
T
amb
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
= 25°C; unless otherwise stated.
amb
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN
TYP
MAX
I
Total supply current, Transmit
Total supply current, Receive
Tx/Rx = Hi
22
34
42
mA
mA
CCTX
Tx/Rx mode = Lo,
LNA = Hi gain
I
14
20
26
CCRX
Tx/Rx = GND
Atten SW = V
I
Power down mode
10
µA
CC
CC OFF
Enable = GND
Receive mode
Tx/Rx = Lo
Tx/Rx = Hi
Tx/Rx = Hi
Logic 1
V
LNA input voltage
0.855
V
V
LNA-IN
V
LO buffer DC input voltage
Tx Mixer input voltage
Tx Mixer input voltage
–0.1
V
CC
LO GHz
V
1.7
1.7
6
V
TX IF
V
V
TX IFB
µA
µA
I
Input bias current
BIAS
Logic 0
0
3
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3 V, T
= 25°C; LO = –10 dBm @ 2.1 GHz; f = 2.45 GHz; unless otherwise stated.
amb
IN
RF
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
2.4
–3σ
+3σ
3
f
RF
RF frequency range
2.45
2.5
GHz
MHz
3
f
IF
IF frequency range
300
350
400
LNA High gain mode (In = Pin 2; Out = 23)
S
S
Amplifier gain
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
LNA gain = Hi
13.3
14.3
–32
–10
–9
15.3
dB
dB
21
Amplifier reverse isolation
12
1
S
Amplifier input match
dB
11
22
1
S
Amplifier output match
dB
ISO
Isolation: LO to LNA
–43
–15
dB
X
IN
P
-1dB
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure (50Ω)
dBm
f - f = 1 MHz,
1
2
IP3
–4.5
3.1
–3.2
3.2
–1.9
3.3
dBm
dB
LNA gain = Hi
NF
LNA gain = Hi
LNA High Overload Mode (low gain mode)
S
S
Amplifier gain
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
LNA gain = Low
–18.5
–19.4
–26
–8
–20.3
dB
dB
21
12
Amplifier reverse isolation
1
S
Amplifier input match
dB
11
22
1
S
Amplifier output match
–8
dB
ISO
Isolation: LO to LNA
–45
2
dB
X
IN
P
-1dB
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure (50 Ω)
dBm
f – f = 1 MHz,
1
2
IP3
18
dBm
dB
LNA gain = Low
NF
LNA gain = Low
18.5
Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, P = –10 dBm)
LO
Power conversion gain into 50 Ω :
matched to 50 W using external balun
circuitry.
f
f
f
= 2.45 GHz,
= 2.1 GHz,
S
LO
PG
9.5
10
10.5
dB
C
= 350 MHz
IF
1
S
Input match at RF (2.45 GHz)
–11
11.2
–10.5
2.2
dB
dB
11–RF
NF
SSB noise figure (2.45 GHz) (50 Ω)
Mixer input 1 dB gain compression
Input third order intercept
9.8
1.8
12.5
2.6
M
P
dBm
dBm
-1dB
IP3
f – f = 1MHz
1 2
Rx Mixer Spurious Components (P = P
)
-1dB
IN
4
P
RF-IF
P
LO-IF
RF feedthrough to IF
LO feedthrough to IF
C = 2 pF per side
-35
-32
dBc
dBc
L
5
C = 2 pF per side
L
4
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
AC ELECTRICAL CHARACTERISTICS (continued)
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
Tx Mixer (Tx OUT = Pin 17, IF = Pins 7 and 8, LO = Pin 10 or 12, P = –10 dBm)
–3σ
+3σ
LO
f
f
f
= 2.45 GHz,
= 2.1 GHz,
S
LO
Power conversion gain: R = 50 Ω
L
PG
22.5
23
23.5
dB
C
R
= 50 Ω
S
= 350 MHz
IF
1
S
Output match at RF (2.45 GHz)
–10
11.2
4.2
dB
dB
11–RF
NF
SSB noise figure (2.45 GHz) (50 Ω)
Output 1dB gain compression
Output third order intercept
10.9
10.1
11.5
14.3
M
P
dBm
dBm
-1dB
IP3
f – f = 1 MHz
12.2
1
2
Tx Mixer Spurious Components (P
= P
)
–1dB
OUT
4
P
IF feedthrough to RF
LO feedthrough to RF
–50
–22
–20
dBc
dBc
dBc
IF-RF
5
P
LO-RF
6
P
Image feedthrough to RF
IMAGE-RF
LO Buffer
P
LO drive level
–15
1.9
–10
–10
2.1
–5
dBm
dB
LO IN
11-LO
S
Mixer input match (LO = 2.1 GHz)
3
f
LOG frequency range
2.3
GHz
LOG
2
Switching
t
Receive-to-transmit switching time
Transmit-to-Receive switching time
Chip enable time
1
1
1
1
µs
µs
µs
µs
Rx-Tx
Tx-Rx
t
t
POWER UP
t
Chip disable time
PWR DWN
NOTES:
1. With simple external matching
2. With 50 pF coupling capacitors on all RF and IF parts
3. This part has been optimized for the stated frequency range. Operation outside this frequency range may yield performance other than
specified in this datasheet.
4. Measured 5dB lower than 1dB compression point, with typical output matching network.
5. Measured at 1dB compression point.
6. With typical output matching network (no image reject mixer is used).
5
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
Table 1. Truth Table
T
X
Mixer and
Predriver
Chip-En
ATT-SW
T –R
Mode
LNA Gain
R Mixer
X
X
X
0
1
1
1
X
1
0
X
X
0
0
1
Sleep
N/S
+14.3 dB
–19 dB
N/S
off
on
on
off
off
off
off
on
Receive
Receive
Transmit
this option is internal and is controlled externally by high and low
logic to the pin. When the LNA is switched into the attenuation
mode, active matching circuitry (on-chip) is switched in (reducing the
number of off-chip components required). To reduce power
consumption when the chip is transmitting, the LNA is automatically
switched into a “sleep” mode (internally) without the use of external
circuitry.
FUNCTIONAL DESCRIPTION
The SA2421 is a 2.45 GHz transceiver front-end available in the
TSSOP-24 package. This integrated circuit (IC) consists of a low
noise amplifier (LNA) and up- and down-converters. There is an
enable/disable switch available to power up/down the entire chip in
1 µs, typically. This transceiver has several unique features.
The LNA has two operating modes: 1) high gain mode with a gain =
+14.3 dB; and 2) low gain mode with a gain –19 dB. The switch for
6
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
23
22
21
20
19
18
17
4.0
3.8
3.6
3.4
3.2
3.0
2.8
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
2.7V
3.0V
3.8V
5.5V
SR02262
SR02265
Figure 3. LNA / Receive Supply Current vs Supply Voltage and
Temperature
Figure 6. LNA Noise Figure vs Supply Voltage and
Temperature
15
14
13
12
11.5
10.5
9.5
8.5
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
2.7V
3.0V
3.8V
5.5V
SR02263
SR02266
Figure 4. LNA Gain vs Supply Voltage and Temperature
Figure 7. RX Gain vs Supply Voltage and Temperature
3.0
2.5
2.0
1.5
1
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
–5.0
–5.5
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
SR02267
2.7V
3.0V
3.8V
5.5V
SR02264
Figure 8. Receive Input IP3 vs Supply Voltage and Temp
Figure 5. LNA Input IP3 vs Supply Voltage and Temperature
7
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
12.5
12.0
11.5
11.0
10.5
10
29
27
25
23
21
19
17
15
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
2.7V
3.0V
3.8V
5.5V
SR02268
SR02271
Figure 9. Receive Noise Figure vs Supply Voltage and Temp
Figure 12. Transmit Gain vs Supply Voltage and Temp
–9.0
–9.5
20
18
16
14
12
10
8
–10.0
–10.5
–11.0
–11.5
–12.0
–12.5
–13
6
4
2
0
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
2.7V
3.0V
3.8V
5.5V
SR02269
SR02272
Figure 10. RX 1dB Compression vs Supply Voltage and Temp
Figure 13. Transmit Output IP3 vs Supply Voltage and Temp
38
37
36
35
34
33
32
31
30
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8
–40_C
0_C
25_C
70_C
85_C
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
TEMPERATURE (°C)
2.7V
3.0V
3.8V
5.5V
2.7V
3.0V
3.8V
5.5V
SR02270
SR02273
Figure 11. Transmit Current vs Supply Voltage and Temp
Figure 14. Transmit Noise Figure vs Supply Voltage and Temp
8
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
9
8
12.0
11.5
11.0
10.5
10.0
9.5
7
6
5
4
3
9.0
2
8.5
1
8.0
0
7.5
–1
7
–18
–16
–14
–12
–10
–8
–5
–2
–40_C
0_C
25_C
70_C
85_C
TEMPERATURE (°C)
LO Input (dBm)
2.7V
3.0V
3.8V
5.5V
–40C
0C
+25C
+70C
+85C
SR02276
SR02274
Figure 15. TX 1dB compression vs Supply Voltage and Temp
Figure 17. Receive Gain vs LO Input over Temp Range
–10
–11
–12
–13
–14
–15
–16
–17
–18
26
25
24
23
22
21
20
19
18
17
–18
–16
–14
–12
–10
–8
–5
–2
–40_C
25_C
85_C
TEMPERATURE (°C)
LO Input (dBm)
2.7V
3.0V
3.8V
5.5V
–40C
0C
+25C
+70C
+85C
SR02277
SR02275
Figure 16. LNA 1dB compression vs Supply Voltage and Temp
Figure 18. Transmit Gain vs LO Input over Temp Range
The Rx IN port is matched to 50 Ω and has an input IP3 of +2.2 dBm
(mixer only). The down-convert mixer is buffered and has open
collectors at the pins to allow for matching to common SAW filters.
The up convert mixer has an input pin to output pin gain of 23 dB.
The output of the up-converter is designed for a power level =
+4.2 dBm (P
).
–1dB
9
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
SR01758
Figure 19.
10
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
11
2000 Mar 13
Philips Semiconductors
Product specification
2.45 GHz low voltage RF transceiver
SA2421
Data sheet status
[1]
Data sheet
status
Product
status
Definition
Objective
specification
Development
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
Preliminary
specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Product
specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 2000
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Date of release: 03-00
Document order number:
9397 750 06949
Philips
Semiconductors
相关型号:
©2020 ICPDF网 联系我们和版权申明