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SA3600DH [NXP]

IC SPECIALTY TELECOM CIRCUIT, PDSO24, PLASTIC, SOT-355-1, TSSOP-24, Telecom IC:Other;
SA3600DH
型号： SA3600DH
厂家： NXP    NXP
描述：

IC SPECIALTY TELECOM CIRCUIT, PDSO24, PLASTIC, SOT-355-1, TSSOP-24, Telecom IC:Other
文件： 总30页 (文件大小：175K)
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INTEGRATED CIRCUITS  
SA3600  
Low voltage dual-band RF front-end  
Product specification  
1999 Nov 02  
Supersedes data of 1999 March 18  
Philips  
Semiconductors  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
DESCRIPTION  
APPLICATIONS  
The SA3600 is an integrated dual-band RF front-end that operates at  
both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and  
• 800 to 1000 MHz analog and digital receivers  
• 1800 to 2000 MHz digital receivers  
• Portable radios  
is designed in a 20 GHz f BiCMOS process—QUBiC2.  
T
The low-band (LB) receiver is a combined low-noise amplifier (LNA)  
and mixer. The LNA has a 1.7 dB noise figure (NF) at 881 MHz with  
17 dB of gain and an IIP3 of –7 dBm. The wide-dynamic range mixer  
has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of  
+6 dBm.  
• Mobile communications equipment  
PIN CONFIGURATION  
The high-band (HB) receiver is a combined low-noise amplifier (LNA)  
and mixer, with the low-band and high-band mixers sharing the same  
mixer output. The LNA has a 2.2 dB NF at 1960 MHz with 16 dB of  
gain and an IIP3 of –5 dBm. The wide-dynamic range mixer has a 8.5  
dB NF at 1960 MHz with 8.5 dB of gain and an IIP3 of +5.5 dBm.  
LB_LNA_OUT  
HB_LNA_OUT  
GND  
1
2
3
4
5
6
7
8
9
24  
23  
22  
21  
20  
19  
18  
17  
16  
GND  
HB_LNA_IN  
LB_LNA_IN  
V
V
CC  
CC  
HB_MXR+_IN  
HB_MXR–_IN  
PD1  
LB_MXR_IN  
GND  
FEATURES  
• Low current consumption: LB I = 14.5 mA; HB I = 20.5 mA  
CC  
CC  
MXR+_OUT  
MXR–_OUT  
GND  
• Outstanding low- and high-band noise figure  
GND  
• LNAs with gain control (30 dB gain step)  
• LO input and output buffers  
HB_VCO_OUT  
PD2 10  
GND 11  
15 LB_VCO_IN  
14 PD3  
• Selectable frequency doubler  
LB_VCO_OUT  
HB_VCO_IN  
SR01596  
12  
13  
• On chip logic for network selection and power down  
• Very small outline package  
ORDERING INFORMATION  
PACKAGE  
DESCRIPTION  
TYPE NUMBER  
NAME  
VERSION  
SA3600  
TSSOP24  
Plastic thin shrink small outline package; 24 leads; body width 4.4 mm  
SOT355–1  
PIN DESCRIPTIONS  
PIN  
PIN  
NO.  
NO.  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
PIN NAME  
HB_LNA_OUT  
GND  
DESCRIPTION  
PIN NAME  
HB_VCO_IN  
PD3  
DESCRIPTION  
Highband VCO input  
1
Highband LNA output  
Ground  
2
Power down control 3  
Lowband VCO input  
Ground  
3
HB_LNA_IN  
Vcc  
Highband LNA input  
Power supply  
LB_VCO_IN  
GND  
4
5
HB_MXR+_IN  
HB_MXR–_IN  
PD1  
Highband mixer positive input  
Highband mixer negative input  
Power down control 1  
Ground  
MXR–_OUT  
MXR+_OUT  
GND  
Mixer negative output  
Mixer positive output  
Ground  
6
7
8
GND  
LB_MXR_IN  
Lowband mixer input  
Power supply  
9
HB_VCO_OUT  
PD2  
Highband VCO buffered output  
Power down control 2  
Ground  
V
CC  
10  
11  
12  
LB_LNA_IN  
GND  
Lowband LNA input  
Ground  
GND  
LB_VCO_OUT  
Lowband VCO buffered output  
LB_LNA_OUT  
Lowband LNA output  
2
1999 Nov 02  
853–2183 22617  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
BLOCK DIAGRAM  
LB_LNA_OUT  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
HB_LNA_OUT  
2
3
GND  
GND  
HB_LNA_IN  
LB_LNA_IN  
4
V
V
CC  
CC  
SA3600  
5
HB_MXR+_IN  
HB_MXR–_IN  
PD1  
LB_MXR_IN  
GND  
6
7
MXR+_OUT  
MXR–_OUT  
8
GND  
9
HB_VCO_OUT  
PD2  
GND  
10  
11  
LB_VCO_IN  
GND  
PD3  
x2  
LB_VCO_OUT 12  
HB_VCO_IN  
SR01594  
Figure 1.  
Block Diagram  
MODE SELECT LOGIC  
Cel  
LNA  
Cel  
MXR  
PCS  
LNA  
PCS  
MXR  
x2  
DBL  
LB LO  
O/P  
HB LO  
O/P  
PD1  
PD2  
PD3  
OPERATING MODE  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Sleep mode  
off  
off  
off  
on  
off  
off  
off  
off  
off  
off  
on  
on  
off  
off  
off  
off  
off  
off  
off  
off  
off  
on  
off  
on  
off  
off  
off  
off  
on  
on  
on  
on  
off  
off  
off  
off  
on  
on  
off  
off  
off  
on  
on  
on  
on  
on  
off  
off  
off  
off  
off  
off  
off  
off  
on  
on  
Tx mode, LO lowband buffer  
Rx mode cellular, low gain  
Rx mode cellular, high gain  
Rx mode PCS, low gain, x2  
Rx mode PCS, high gain, x2  
Rx mode PCS, low gain, no x2  
Rx mode PCS, high gain, no x2  
3
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
OPERATION  
The SA3600 is a highly integrated dual-band radio frequency (RF)  
front-end integrated circuit (IC) targeted for TDMA applications. This  
IC is split into separate low-band (LB) and high-band (HB) receivers.  
The LB receiver contains a low noise amplifier (LNA) and mixer that  
are designed to operate in the cellular frequency range  
(869–894MHz). The HB receiver contains an LNA and mixer that  
are designed to operate in the PCS frequency range  
(1930–1990 MHz). The SA3600 also contains a frequency doubler  
that can drive the HB mixer local oscillator (LO) port, allowing a  
single-band voltage controlled oscillator (VCO) to be used to drive  
both mixers. Modes for bypassing the doubler are also provided, in  
the case where a dual-band VCO is used.  
High-Band Receive Section  
The HB circuit contains a LNA followed by a Gilbert cell mixer with  
differential inputs. The LNA output uses an internal pull-up inductor  
to VCC , which eliminates the need for an external pull-up. The  
mixer IF outputs are differential and are combined with the low-band  
IF mixer outputs thereby eliminating the need for extra output pins.  
Similar to the LB LNA, the HB LNA has two gain settings: high gain  
(16 dB) and low gain (–15 dB).  
Control Logic Section  
Pins PD1, PD2, and PD3, control the logic functions of the SA3600.  
The PD1 selects between LB and HB operations. In LB receive  
mode, the LB LNA is in high gain mode (or on) when PD1,2,3 are  
(0,1,1). In all other modes, the LB LNA is off. The LB mixer is on  
when PD1,2,3 are (0,1,X). In all other modes, the LB mixer is off.  
During transmit mode when PD1,2,3 are (0,0,1), the LB LO buffer is  
on, enabling use of the LO signal for the transmitter.  
The SA3600 has eight modes of operation that control the LNAs,  
mixers, LO buffers and doubler. The select pins (PD1,2,3) are used  
to change modes of operation. The internal select logic powers the  
device down (0,0,0), turns on the LB LO buffer for use in transmit  
mode (0,0,1), enables cellular receive mode for high and low gain  
(0,1,X), enables PCS receive mode for high and low gain both  
without doubler (1,1,X) and with doubler (1,0,X).  
In HB receive mode, the HB LNA is in high gain mode (or on) when  
PD1,2,3 are (1,X,1). In all other modes, the HB LNA is off. The HB  
mixer is on when PD1,2,3 are (1,X,X), and is off in all other modes.  
The on-chip frequency doubler (X2) is on in (1,0,X) modes. When  
the frequency doubler is on, the input signal from the LB LO buffer is  
doubled in frequency, which can then be used to drive the HB mixer  
LO port. The frequency doubler can also be bypassed in modes  
(1,1,X), in which case the HB mixer is driven directly by an external  
2 GHz LO signal.  
Low-Band Receive Section  
The LB circuit contains a LNA followed by a wide dynamic range  
active mixer. In a typical application circuit, the LNA output uses an  
external pull-up inductor to VCC and is AC coupled. The mixer IF  
outputs are differential and are combined with the high-band IF  
mixer outputs thereby eliminating the need for extra output pins.  
External inductors and capacitors can be used to convert the  
differential mixer outputs to single-ended. Furthermore, the LNA  
provides two gain settings: high gain (17dB) and low gain (–15 dB).  
The desired gain state can be selected by setting the logic pins  
(PD1,PD2,PD3) appropriately.  
Local Oscillator (LO) Section  
The LB LO buffers are on for all modes except sleep mode, when  
PD1,2,3 are (0,0,0), and for HB receive mode without doubler,  
PD1,2,3 are (1,1,X). The HB LO buffers are on only when PD1,2,3  
are (1,1,X). The PD1,2,3 pins are used to power-up/down all LO  
input buffers, which minimizes the pulling effect on the external VCO  
when entering receive or transmit mode.  
4
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
1
ABSOLUTE MAXIMUM RATINGS  
LIMITS  
SYMBOL  
PARAMETER  
UNITS  
MIN.  
–0.3  
–0.3  
MAX.  
V
CC  
Supply voltage  
Voltage applied to any other pin  
Power dissipation, T = +25 °C (still air)  
+4.5  
V
V
P
V
CC  
+0.3  
V
mW  
°C  
IN  
555  
D
amb  
T
J MAX  
Maximum junction temperature  
Power input/output  
150  
+20  
+10  
+150  
+85  
P
MAX  
MAX  
dBm  
mA  
°C  
I
DC current into any I/O pin  
Storage temperature range  
Operating temperature  
–10  
–65  
–40  
T
T
STG  
°C  
O
NOTES:  
1. IC is protected against ESD voltages up to 500 V (human body model).  
DC ELECTRICAL CHARACTERISTICS  
Unless otherwise specified, all Input/Output ports are single-ended.  
DC PARAMETERS  
V
CC  
= +3.0 V, T  
= +25°C unless otherwise specified  
amb  
TEST CONDITIONS  
TESTER LIMITS  
SYMBOL  
PARAMETER  
UNIT  
PD1  
PD2  
0
PD3  
MIN  
TYP  
0.1  
MAX  
Sleep mode  
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
1
µA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
Tx mode, LO lowband buffer  
Rx mode cellular, low gain  
Rx mode cellular, high gain  
Rx mode PCS, low gain, x2  
Rx mode PCS, high gain, x2  
Rx mode PCS, low gain, no x2  
Rx mode PCS, high gain, no x2  
Input HIGH voltage  
0
4.3  
5.5  
12  
1
10.1  
14  
1
16.5  
21  
I
CC  
0
17.5  
23.5  
14.5  
20.5  
0
28  
1
17.5  
24.5  
1
V
IH  
0.5xV  
V
+0.3  
CC  
CC  
V
Input LOW voltage  
–0.3  
–5  
0.2xV  
+5  
V
IL  
CC  
I
Input bias current  
Logic 1 or logic 0  
µA  
BIAS  
5
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
AC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3.0 V, f = 881 MHz, f = 963 MHz, T = +25°C, unless otherwise specified  
RF  
LO  
amb  
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
MAX.  
MIN.  
–3 σ  
+3 σ  
Cascaded Gain Section  
G
G
LB LNA + Mixer, High Gain  
LB LNA + Mixer, Low Gain  
Filter loss = 3 dB  
Filter loss = 3 dB  
20.5  
23.5  
–8.5  
26.5  
–5.5  
dB  
dB  
SYS  
BYP  
–11.5  
Low-band LNA Section  
f
RF input frequency range  
Small signal gain ENABLED  
Noise figure ENABLED  
869  
894  
MHz  
dB  
RF  
G
16.1  
1.5  
17  
1.7  
–7  
17.9  
1.9  
ENA  
NF  
dB  
ENA  
IIP3  
Input 3rd order Intercept Point  
Input 1 dB Compression Point  
Small signal gain BYPASSED  
Noise figure BYPASSED  
–8.1  
–5.9  
dBm  
dBm  
dB  
ENA  
P1dB  
–20  
–15  
15  
ENA  
G
BYP  
NF  
dB  
BYP  
IIP3  
Input 3rd order Intercept Point  
15  
dBm  
dB  
BYP  
IN  
2
Z
Input return loss  
50 Ω system  
50 Ω system  
10  
2
Z
OUT  
Output return loss  
10  
dB  
1
T
SW  
ENABLE/DISABLE speed  
20  
µs  
Low-band Mixer Section  
f
RF input frequency range  
IF output frequency range  
LO input range  
869  
70  
894  
200  
MHz  
MHz  
MHz  
dB  
RF  
f
IF  
f
LO  
939  
1100  
G
Small signal gain  
P
P
P
P
= –5 dBm  
= –5 dBm  
= –5 dBm  
= –5 dBm  
9
9.5  
9.5  
6
10  
10.4  
6.9  
MXR  
LO  
LO  
LO  
LO  
NF  
SSB Noise figure  
8.6  
5.1  
dB  
MXR  
IIP3  
Input 3rd order Intercept Point  
Input 1 dB Compression Point  
LO input power range  
dBm  
dBm  
dBm  
dB  
MXR  
P1dB  
–14  
–5  
10  
10  
MXR  
P
–7  
–3  
LO  
2
Z
Input return loss  
50 Ω system  
50 Ω system  
IN  
2
Z
OUT  
Output return loss  
dB  
Two-tone spurious rejection:  
P
LO  
= –5 dBm  
f
f
=890.0 MHz @–36 dBm  
=848.9 MHz @–20 dBm  
RF  
Tx  
2(f –f ), f –f =f /2  
–110  
–110  
RF Tx RF Tx IF  
2-Tone  
dBm  
f
RF  
=876.3 MHz @–36 dBm  
=848.9 MHz @–20 dBm  
3(f –f ), f –f =f /3  
RF Tx RF Tx IF  
f
Tx  
RF–LO  
LO–RF  
RF to LO isolation  
25  
40  
dB  
dB  
µs  
LO to RF isolation  
1
T
SW  
ENABLE/DISABLE speed  
20  
Low-band LO Buffer Section  
P
LO Input frequency range  
LO Input power  
939  
–7  
1100  
–3  
MHz  
dBm  
dBm  
dB  
LO  
P
50 Ω matched LB_VCO_IN  
50 Ω matched LB_VCO_OUT  
50 Ω system  
–5  
–7.5  
10  
IN  
P
OUT  
LO Output power  
–8  
–7  
2
Z
Input return loss  
IN  
2
Z
OUT  
Output return loss  
50 Ω system  
10  
dB  
Harmonic content  
P
LO  
= –5 dBm  
–20  
dBc  
µs  
1
T
SW  
ENABLE/DISABLE speed  
20  
6
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
AC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3.0 V, f = 1960 MHz, f = 2042 MHz, T = +25°C, unless otherwise specified  
RF  
LO  
amb  
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN.  
–3 σ  
+3 σ  
MAX.  
Cascaded Gain Section  
G
G
HB LNA + Mixer, High Gain  
HB LNA + Mixer, Low Gain  
Filter loss = 3 dB  
Filter loss = 3 dB  
18.5  
21.5  
–9.5  
24.5  
–6.5  
dB  
dB  
SYS  
BYP  
–12.5  
High-band LNA Section  
f
RF input frequency range  
Small signal gain ENABLED  
Noise figure ENABLED  
1930  
1990  
MHz  
dB  
RF  
G
15  
1.9  
16  
2.2  
–5  
17  
2.5  
ENA  
NF  
dB  
ENA  
IIP3  
Input 3rd order Intercept Point  
Input 1 dB Compression Point  
Small signal gain BYPASSED  
Noise figure BYPASSED  
–6.5  
–3.5  
dBm  
dBm  
dB  
ENA  
P1dB  
–14  
–15  
15  
ENA  
G
BYP  
NF  
dB  
BYP  
IIP3  
Input 3rd order Intercept Point  
15  
dBm  
dB  
BYP  
2
Z
IN  
Input return loss  
50 Ω system, ENA and BYP  
50 Ω system, ENA and BYP  
10  
Z
OUT  
Output return loss  
10  
dB  
1
T
SW  
ENABLE/DISABLE speed  
20  
µs  
High-band Mixer Section  
f
RF input frequency range  
IF output frequency range  
LO input range  
1930  
70  
1990  
200  
MHz  
MHz  
MHz  
dB  
RF  
f
IF  
f
LO  
2000  
2190  
G
Small signal gain  
P
LO  
P
LO  
P
LO  
P
LO  
P
LO  
P
LO  
= –5 dBm  
= –5 dBm  
= –5 dBm  
= –5 dBm  
= –5 dBm  
= –5 dBm  
7.8  
7.6  
8.1  
4
8.5  
8.5  
9
9.2  
9.4  
9.9  
7
MXR  
SSB Noise figure, doubler off  
SSB Noise figure, doubler on  
dB  
NF  
MXR  
dB  
Input 3rd order Intercept Point, doubler off  
Input 3rd order Intercept Point, doubler on  
Input 1 dB Compression Point  
5.5  
3
dBm  
dBm  
dBm  
IIP3  
MXR  
1.9  
4.1  
P1dB  
–14  
MXR  
Half-IF spurious rejection  
2(f –f ), f –f =f /2, doubler off  
RF LO RF LO IF  
–90  
–85  
f
f
=1972.0 MHz @–36 dBm  
RF  
f
IF/2 rej.  
IF/3 rej.  
dBm  
dBm  
=2013.1 MHz @–5 dBm  
LO  
Half-IF spurious rejection  
2(f –f ), f –f =f /2, doubler on  
RF LO RF LO IF  
Third-IF spurious rejection  
3(f –f ), f –f =f /3  
RF LO RF LO IF  
=1985.7 MHz @–36 dBm  
RF  
–114  
f
=2013.1 MHz @–5 dBm  
LO  
Two-tone spurious rejection:  
P
LO  
= –5 dBm,  
f
f
=1933.0 MHz @–36 dBm  
=1850.8 MHz @–20 dBm  
RF  
Tx  
f
–f , f –f =f  
–70  
–115  
–125  
RF Tx RF Tx IF  
2-tone  
f
RF  
=1951.0 MHz @–36 dBm  
=1909.9 MHz @–20 dBm  
dBm  
2(f –f ), f –f =f /2  
RF Tx RF Tx IF  
f
Tx  
f
RF  
=1937.3 MHz @–36 dBm  
=1909.9 MHz @–20 dBm  
3(f –f ), f –f =f /3  
RF Tx RF Tx IF  
f
Tx  
P
LO input power range  
–7  
–5  
10  
10  
40  
30  
–3  
20  
dBm  
dB  
dB  
dB  
dB  
µs  
LO  
2
Z
Input return loss  
50 Ω system  
50 Ω system  
IN  
2
Z
OUT  
Output return loss  
RF–LO  
LO–RF  
RF to LO isolation  
LO to RF isolation  
1
T
SW  
ENABLE/DISABLE speed  
7
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
AC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3.0 V, T = +25°C, unless otherwise specified  
amb  
LIMITS  
TYP  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MAX.  
MIN.  
–3 σ  
+3 σ  
High-band LO Buffer Section  
P
LO Input frequency range  
LO Input power  
2000  
–7  
2190  
–3  
MHz  
dBm  
dBm  
dB  
LO  
P
50 Ω matched HB_VCO_IN  
50 Ω matched HB_VCO_OUT  
50 Ω system  
–5  
–8  
IN  
P
OUT  
LO Output power  
–8.8  
–7.2  
2
Z
Input return loss  
10  
IN  
2
Z
OUT  
Output return loss  
50 Ω system  
10  
dB  
Harmonic content  
P
LO  
= –5 dBm  
–20  
dBc  
µs  
1
T
SW  
ENABLE/DISABLE speed  
20  
x2 LO Doubler Section  
f
LO Input frequency  
LO Input power  
1000  
–7  
1095  
–3  
MHz  
dBm  
dB  
LO  
P
Z
50 Ω matched LB_VCO_IN  
50 Ω system  
–5  
10  
10  
IN  
2
Input return loss  
IN  
2
Z
OUT  
Output return loss  
50 Ω system  
dB  
1
T
SW  
ENABLE/DISABLE speed  
20  
µs  
NOTES:  
1. Dependent on external components.  
2. External matching required.  
8
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
PIN NO  
PIN MNEMONIC  
DC V  
EQUIVALENT CIRCUIT  
V
CC  
1
HB LNA OUT  
SR01786  
V
BIAS  
5K  
3
HB LNA IN  
0.8  
SR01787  
V
CC  
4
5
6
V
V
CC  
BIAS  
HB MXR+ IN  
HB MXR– IN  
1.2  
1.2  
SR01788  
7
PD1  
PD2  
PD3  
10  
14  
Apply externally  
SR01789  
V
CC  
V
CC  
9
HB VCO OUT  
Pull-up externally to V  
CC  
SR01790  
9
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
PIN NO  
PIN MNEMONIC  
DC V  
EQUIVALENT CIRCUIT  
V
CC  
12  
LB VCO OUT  
V
CC  
– 0.2 V  
SR01791  
V
V
V
CC  
BIAS  
BIAS  
13  
HB VCO IN  
1.9  
SR01792  
V
CC  
15  
LB VCO IN  
1.0  
SR01793  
V
CC  
2 pF  
17  
MXR– OUT  
V
CC  
Pull-up externally to V  
CC  
2 pF  
18  
MXR+ OUT  
SR01794  
10  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
PIN NO  
PIN MNEMONIC  
DC V  
EQUIVALENT CIRCUIT  
V
BIAS  
V
CC  
20  
LB MXR IN  
1.2  
SR01795  
V
BIAS  
V
CC  
5K  
22  
LB LNA IN  
0.8  
SR01796  
V
CC  
24  
LB LNA OUT  
Pull-up externally to V  
CC  
SR01797  
11  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
PERFORMANCE CHARACTERISTICS  
V
CC  
= +3.0 V, T  
= +25_C; unless otherwise specified.  
amb  
16.0  
15.0  
0.20  
0.15  
+85° C  
+85° C  
+25° C  
14.0  
+25° C  
–40° C  
0.10  
0.05  
13.0  
12.0  
11.0  
–40° C  
00.0  
2.5  
3.0  
3.5  
4.0  
2.5  
3.0  
3.5  
4.0  
V
(V)  
CC  
V
(V)  
CC  
SR02204  
SR02201  
Figure 5.  
I
versus V (mode 011 – LB receive, high gain)  
Figure 2.  
I versus V (mode 000 – sleep mode)  
CC CC  
CC  
CC  
19.0  
18.5  
5.0  
4.8  
18.0  
4.6  
4.4  
17.5  
17.0  
+85° C,  
+25° C  
+85° C  
+25° C  
4.2  
4.0  
–40° C  
–40° C  
16.5  
2.5  
3.0  
3.5  
4.0  
2.5  
3.0  
3.5  
4.0  
V
(V)  
CC  
V
(V)  
CC  
SR02205  
SR02202  
Figure 6.  
I
versus V (mode 100 – HB receive, low gain,  
Figure 3.  
I versus V (mode 001 – transmit mode)  
CC CC  
CC  
CC  
doubler on)  
26.5  
25.0  
11.0  
10.5  
10.0  
+85° C  
+25° C  
23.5  
–40° C,  
+25° C  
22.0  
20.5  
–40° C  
+85° C  
9.5  
2.5  
2.5  
3.0  
3.5  
4.0  
3.0  
3.5  
4.0  
V
(V)  
CC  
V
(V)  
CC  
SR02203  
SR02206  
Figure 7.  
I
versus V (mode 101 – HB receive, high gain,  
Figure 4.  
I versus V (mode 010 – LB receive, low gain)  
CC CC  
CC  
CC  
doubler on)  
12  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
–13.0  
–14.0  
16.0  
15.5  
–40° C  
+25° C  
+85° C  
–15.0  
–16.0  
15.0  
+85° C  
14.5  
–17.0  
–18.0  
–40° C  
+25° C  
14.0  
865  
870  
875  
880  
885  
890  
895  
900  
2.5  
3.0  
3.5  
4.0  
V
(V)  
CC  
Frequency (MHz)  
SR02207  
SR02210  
Figure 8.  
I
versus V (mode 110 – HB receive, low gain,  
Figure 11. LB LNA low gain versus frequency  
CC  
CC  
doubler off)  
3.0  
2.5  
24.0  
22.0  
+85° C  
+25° C  
+85° C  
2.0  
20.0  
18.0  
+25° C  
–40° C  
–40° C  
1.5  
1.0  
16.0  
865  
870  
875  
880  
885  
890  
895  
900  
2.5  
3.0  
3.5  
4.0  
Frequency (MHz)  
V
(V)  
CC  
SR02208  
SR02211  
Figure 9.  
I
versus V (mode 111 – HB receive, high gain,  
Figure 12.  
LB LNA noise figure versus frequency  
(high gain mode)  
CC  
CC  
doubler off)  
–4.0  
18.0  
17.5  
–6.0  
–40° C  
+25° C  
+85° C  
17.0  
+25° C  
–40° C  
–8.0  
16.5  
16.0  
+85° C  
–10.0  
865  
870  
875  
880  
885  
890  
895  
900  
865  
870  
875  
880  
885  
890  
895  
900  
Frequency (MHz)  
Frequency (MHz)  
SR02212  
SR02209  
Figure 10.  
LB LNA gain versus frequency  
Figure 13.  
LB LNA IIP3 versus frequency  
(high gain mode)  
13  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
–12.0  
–13.0  
–18.0  
–19.0  
–40° C  
+25° C  
–14.0  
–15.0  
+25° C  
+85° C  
–20.0  
–16.0  
–40° C  
+85° C  
–17.0  
–18.0  
–21.0  
–22.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990 2000  
SR02216  
865  
870  
875  
880  
885  
890  
895  
900  
Frequency (MHz)  
Frequency (MHz)  
SR02213  
Figure 14.  
LB LNA 1 dB compression versus frequency  
(high gain mode)  
Figure 17.  
HB LNA low gain versus frequency  
–11.0  
3.0  
+85° C  
+25° C  
–12.0  
–13.0  
–14.0  
+85° C  
2.5  
2.0  
+25° C  
–40° C  
–15.0  
–16.0  
–40° C  
1.5  
1.0  
–17.0  
1920  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
SR02214  
2000  
Frequency (MHz)  
Frequency (MHz)  
SR02217  
Figure 15.  
HB LNA 1 dB compression versus frequency  
(high gain mode)  
Figure 18.  
HB LNA noise figure versus frequency  
(high gain mode)  
17.0  
16.5  
0.0  
–40° C  
+85° C  
–2.0  
+85° C  
+25° C  
–4.0  
16.0  
15.5  
15.0  
+25° C  
–40° C  
–6.0  
–8.0  
–10.0  
1920  
1930  
1940  
1950  
1960 1970  
1980  
1990  
2000  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
Frequency (MHz)  
Frequency (MHz)  
SR02215  
SR02218  
Figure 16.  
HB LNA gain versus frequency  
Figure 19.  
HB LNA IIP3 versus frequency  
(high gain mode)  
14  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
11.0  
–12.0  
–13.0  
–40° C  
–40° C  
10.0  
+25° C  
+85° C  
+25° C  
–14.0  
–15.0  
9.0  
+85° C  
8.0  
7.0  
–16.0  
865  
870  
875  
880  
885  
890  
895  
900  
865  
870  
875  
880  
885  
890  
895  
900  
Frequency (MHz)  
Frequency (MHz)  
SR02219  
SR02222  
Figure 20.  
LB mixer conversion gain versus frequency  
Figure 23.  
LB mixer 1 dB compression versus frequency  
10.0  
12.0  
11.0  
10.0  
9.0  
–40° C  
+25° C  
9.0  
+85° C  
+25° C  
8.0  
+85° C  
–40° C  
7.0  
6.0  
8.0  
7.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990 2000  
SR02224  
865  
870  
875  
880  
885  
890  
895  
900  
Frequency (MHz)  
Frequency (MHz)  
SR02220  
Figure 21.  
LB mixer noise figure versus frequency  
Figure 24.  
HB mixer conversion gain versus frequency,  
doubler off  
11.0  
10.0  
9.0  
10.0  
–40° C  
+25° C  
8.0  
6.0  
4.0  
+85° C  
+25° C  
–40° C  
8.0  
7.0  
+85° C  
2.0  
0.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
865  
870  
875  
880  
885  
890  
895  
900  
Frequency (MHz)  
Frequency (MHz)  
SR02225  
SR02221  
Figure 22.  
LB mixer input IP3 versus frequency  
Figure 25.  
HB mixer noise figure versus frequency,  
doubler off  
15  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
–82.0  
–84.0  
10.0  
–40° C  
8.0  
+25° C  
+25° C  
+85° C  
6.0  
–86.0  
+85° C  
4.0  
–40° C  
–88.0  
–90.0  
2.0  
0.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990 2000  
SR02228  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990 2000  
SR02226  
Frequency (MHz)  
Frequency (MHz)  
Figure 26.  
HB mixer input IP3 versus frequency,  
doubler off  
Figure 29.  
HB mixer half-IF spur versus frequency  
(input = –36 dBm, doubler on)  
–13.0  
10.0  
–40° C  
–13.5  
–14.0  
9.0  
8.0  
7.0  
6.0  
–40° C  
+25° C  
+85° C  
+25° C  
+85° C  
–14.5  
–15.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
Frequency (MHz)  
Frequency (MHz)  
SR02227  
SR02229  
Figure 27.  
HB mixer 1 dB compression versus frequency,  
doubler off  
Figure 30.  
HB mixer conversion gain versus frequency,  
doubler on  
–86.0  
–88.0  
12.0  
+85° C  
11.0  
10.0  
–40° C  
+25° C  
–90.0  
–92.0  
–94.0  
+25° C  
–40° C  
9.0  
8.0  
+85° C  
–96.0  
1920  
7.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
Frequency (MHz)  
Frequency (MHz)  
SR02223  
SR02230  
Figure 28.  
HB mixer half-IF spur versus frequency  
(input = –36 dBm, doubler off)  
Figure 31.  
HB mixer noise figure versus frequency,  
doubler on  
16  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
6.0  
5.0  
–5.0  
–6.0  
+85° C  
4.0  
–40° C  
+25° C  
–7.0  
–8.0  
3.0  
+25° C  
+85° C  
2.0  
1.0  
–9.0  
–40° C  
0.0  
–10.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990 2000  
950  
955  
960  
965  
970  
975  
980  
Frequency (MHz)  
Frequency (MHz)  
SR02233  
SR02231  
Figure 32.  
HB mixer input IP3 versus frequency,  
doubler on  
Figure 34.  
LB LO output power versus frequency (mode 010)  
30.0  
–6.0  
–7.0  
+25° C  
28.0  
–40° C  
+25° C  
+85° C  
–8.0  
–9.0  
+85° C  
–40° C  
26.0  
24.0  
–10.0  
–11.0  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
2010  
2020  
2030  
2040  
2050  
2060  
2070  
2080  
Frequency (MHz)  
Frequency (MHz)  
SR02232  
SR02234  
Figure 33.  
HB mixer input IP2 versus frequency,  
doubler on  
Figure 35.  
HB LO output power versus frequency  
(mode 110)  
17  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
PMU  
PMU  
10 kΩ  
10 nh  
LB_LNA_OUT  
220 pF  
220 pF  
1.8 pF  
HB_LNA_OUT  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12 nh  
GND  
PMU  
GND  
2
10 kΩ  
10 kΩ  
PMU  
220 pF  
5.6 nh  
220 pF  
RF  
Source  
HB_LNA_IN  
LB_LNA_IN  
3
4
RF Source  
6.8 pF  
3 dB Pad  
V
CC  
V
CC  
PMU  
0.01 µF  
PMU  
0.01 µF  
100 pF  
100 pF  
18 nh  
3 dB Pad  
PMU  
HB_MXR+_IN  
HB_MXR–_IN  
PD1  
10 kΩ  
LB_MXR_IN  
GND  
5
10 kΩ  
220 pF  
100 pF  
PMU  
10 nh  
220 pF  
6
1 kΩ  
MXR+_OUT  
MXR–_OUT  
PMU  
PMU  
7
PMU  
0.01 µF  
100 pF  
0.1 pF  
8.2 pF  
470 nh  
10 pF  
470 nh  
GND  
8
RF Meas.  
8.2 pF  
10 nh  
100 pF  
HB_VCO_OUT  
PD2  
GND  
9
RF Meas.  
10 kΩ  
PMU  
1 kΩ  
LB_VCO_IN  
PMU  
10  
11  
12  
RF Source  
18 pF  
0.1 µF  
4.7 nh  
1 k  
GND  
PD3  
PMU  
2.7 pF  
10 kΩ  
0.1 µF  
PMU  
LB_VCO_OUT  
HB_VCO_IN  
RF Meas.  
RF Source  
100 pF  
PMU  
4.7 nh  
10 kΩ  
SR02235  
Figure 36.  
SA3600 production test circuit schematic  
18  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
J1  
SMA  
J6  
SMA  
C12  
1.5pF  
R11  
000  
R10  
10  
LBLOUT  
HBLOUT  
L18  
TOKO 8.2nH  
L19  
UL  
L16  
8.2nH  
R9  
UL  
R8  
330  
C34  
10nF  
J2  
SMA  
J7  
SMA  
C13  
100pF  
C2  
100pF  
R12  
000  
C37  
LBLIN  
LBMIN  
10nF  
HBLIN  
C1  
0.5pF  
R2  
10  
R1  
10  
HBLNA_OUT  
GND  
LBLNA_OUT  
1
2
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
C16  
100nF  
C16  
100pF  
J8  
SMA  
GND  
C18  
1nF  
C3  
100nF  
C4  
100pF  
HBLNA_IN  
LBLNA_IN  
3
L15  
22nH  
L4  
1.8nH  
C5  
100pF  
C6  
1.8pF  
C33  
1pF  
V
CC  
V
CC  
4
SA3600  
HBMIX_IN-P  
HBMIX_IN-N  
PD1  
LBMIX_IN  
J3  
C28  
6.8pF  
C20  
27pF  
5
C9  
100pF  
SMA  
L2  
2.7nH  
GND  
L11  
UL  
L12  
UL  
6
HBMIN  
L3  
2.7nH  
L5  
1.8nH  
MIXER_OUT-P  
MIXER_OUT-N  
82MHz IF  
J9  
C22  
1nF  
7
L8  
120nH  
L7  
180nH  
R4  
10k  
GND  
SMA  
8
C7  
1.8pF  
C6  
100pF  
HBVCO_OUT  
PD2  
GND  
9
MIXOUT  
LBVCO_IN  
10  
11  
12  
R3  
10k  
L6  
180nH  
C19  
27pF  
GND  
PD3  
PD1  
x2  
LBVCO_OUT  
HBVCO_IN  
R7  
L9  
C27  
6.8pF  
10  
120nH  
PD2  
J11  
SMA  
C21  
100pF  
C24  
22pF  
L10  
10nH  
J4  
C10  
5.6pF  
C32  
8.2pF  
0402  
SMA  
L13  
2.7nH  
HBLOOUT  
Mode Select  
Sleep mode  
PD1 PD2 PD3  
C31  
8.2pF  
0402  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
J5  
C11  
Tx mode, LO LB Buffer  
SMA  
1.2pF  
Rx mode cell, LO Gain  
Rx mode cell, HI Gain  
J10  
SMA  
LBLOOUT  
C23  
100pF  
Rx mode PCS, LO Gain X2  
Rx mode PCS, HI Gain X2  
Rx mode PCS, LO Gain No X2  
Rx mode PCS, HI Gain No X2  
C30  
2.2pF  
J12  
CC  
V
PD3  
V
CC  
GND  
R6  
10  
C26  
100nF  
C25  
100pF  
C38  
100pF  
SR02236  
Figure 37.  
SA3600 Application circuit (f = 82 MHz)  
IF  
19  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 1. Low-band LNA S-parameters (high gain mode)  
Freq (MHz)  
800  
|S11| (U)  
0.42  
0.42  
0.41  
0.41  
0.41  
0.41  
0.40  
0.40  
0.40  
0.39  
0.39  
0.39  
0.38  
0.38  
0.38  
0.37  
0.37  
0.37  
0.36  
0.36  
0.36  
0.36  
0.36  
0.36  
0.35  
0.35  
<S11 (deg)  
–89  
–89  
–90  
–91  
–91  
–92  
–92  
–93  
–93  
–93  
–93  
–94  
–94  
–94  
–95  
–95  
–95  
–96  
–96  
–96  
–97  
–96  
–97  
–97  
–97  
–97  
|S21| (U)  
5.19  
5.17  
5.11  
5.11  
5.03  
4.97  
4.97  
4.92  
4.85  
4.84  
4.77  
4.73  
4.67  
4.61  
4.55  
4.49  
4.43  
4.36  
4.30  
4.25  
4.23  
4.16  
4.15  
4.11  
4.07  
4.04  
<S21 (deg)  
89  
|S12| (U)  
0.006  
0.006  
0.005  
0.004  
0.008  
0.007  
0.006  
0.008  
0.007  
0.006  
0.005  
0.005  
0.009  
0.007  
0.003  
0.006  
0.005  
0.008  
0.006  
0.009  
0.005  
0.007  
0.008  
0.008  
0.007  
0.009  
<S12 (deg)  
14  
|S22| (U)  
<S22 (deg)  
–37  
–37  
–38  
–38  
–38  
–39  
–40  
–40  
–41  
–42  
–42  
–42  
–43  
–43  
–44  
–44  
–44  
–45  
–46  
–47  
–47  
–47  
–48  
–48  
–49  
–49  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.97  
0.98  
0.98  
0.98  
0.98  
0.98  
0.98  
0.97  
0.98  
0.98  
0.98  
0.98  
0.97  
0.97  
0.98  
810  
89  
19  
820  
88  
45  
830  
87  
11  
840  
86  
14  
850  
85  
–2  
860  
84  
32  
870  
83  
8
880  
82  
–9  
890  
81  
–18  
3
900  
81  
910  
79  
–12  
3
920  
79  
930  
78  
13  
940  
77  
–1  
950  
77  
–33  
–29  
–46  
8
960  
76  
970  
75  
980  
75  
990  
74  
–24  
21  
1000  
1010  
1020  
1030  
1040  
1050  
74  
73  
–8  
73  
–20  
–22  
–55  
–35  
73  
71  
71  
20  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters  
Freq(MHz)  
670  
|S11| (U)  
0.37  
0.37  
0.35  
0.33  
0.32  
0.31  
0.30  
0.28  
0.27  
0.26  
0.25  
0.24  
0.23  
0.22  
0.21  
0.20  
0.20  
0.21  
0.21  
0.20  
0.21  
0.22  
0.23  
0.24  
0.25  
0.26  
0.27  
0.29  
0.30  
0.31  
0.32  
0.34  
0.35  
0.37  
0.38  
0.39  
0.41  
0.42  
0.43  
0.44  
<S11 (deg)  
–168  
–168  
–169  
–171  
–171  
–171  
–172  
–171  
–171  
–170  
–170  
–168  
–168  
–165  
–162  
–160  
–157  
–153  
–149  
–147  
–145  
–141  
–140  
–137  
–136  
–136  
–134  
–134  
–135  
–134  
–134  
–135  
–136  
–136  
–137  
–138  
–139  
–140  
–141  
–142  
|S22| (U)  
0.46  
0.47  
0.49  
0.50  
0.50  
0.51  
0.52  
0.53  
0.53  
0.54  
0.55  
0.56  
0.56  
0.58  
0.58  
0.59  
0.59  
0.60  
0.60  
0.61  
0.62  
0.62  
0.62  
0.63  
0.64  
0.64  
0.64  
0.65  
0.65  
0.65  
0.65  
0.66  
0.66  
0.66  
0.66  
0.66  
0.66  
0.66  
0.67  
0.66  
<S22 (deg)  
75  
73  
71  
69  
67  
66  
64  
63  
61  
60  
58  
56  
55  
54  
52  
51  
49  
48  
46  
45  
44  
42  
41  
40  
38  
37  
35  
35  
33  
32  
31  
30  
29  
28  
26  
26  
25  
24  
23  
22  
680  
690  
700  
710  
720  
730  
740  
750  
760  
770  
780  
790  
800  
810  
820  
830  
840  
850  
860  
870  
880  
890  
900  
910  
920  
930  
940  
950  
960  
970  
980  
990  
1000  
1010  
1020  
1030  
1040  
1050  
1060  
21  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 2. Low-band LO input (pin 15) and output (pin 12) S-parameters (continued)  
Freq(MHz)  
1070  
1080  
1090  
1100  
|S11| (U)  
0.46  
0.48  
0.49  
0.51  
0.52  
0.53  
0.53  
0.54  
0.55  
0.56  
0.57  
<S11 (deg)  
–143  
|S22| (U)  
0.66  
0.66  
0.66  
0.66  
0.67  
0.67  
0.67  
0.67  
0.68  
0.68  
0.68  
<S22 (deg)  
21  
21  
20  
20  
19  
18  
18  
18  
17  
16  
16  
–144  
–145  
–147  
1110  
–150  
1120  
–151  
1130  
–153  
1140  
–155  
1150  
–156  
1160  
–157  
1170  
–159  
22  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 3. Mixer output S-parameters  
Both pins (17, 18)  
Freq(MHz)  
70  
|S11| (U)  
1.00  
1.00  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
0.99  
<S11 (deg)  
–8  
80  
–9  
90  
–10  
–11  
–12  
–13  
–14  
–16  
–16  
–18  
–19  
–20  
–21  
–22  
100  
110  
120  
130  
140  
150  
160  
170  
180  
190  
200  
23  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 4. Low-band mixer input S-parameters  
Freq(MHz)  
800  
|S11| (U)  
0.84  
0.85  
0.85  
0.85  
0.84  
0.85  
0.85  
0.84  
0.85  
0.85  
0.84  
0.85  
0.84  
0.85  
0.85  
0.85  
0.85  
0.84  
0.85  
0.84  
0.84  
0.85  
0.84  
0.85  
0.84  
0.85  
<S11 (deg)  
–14  
–14  
–14  
–15  
–15  
–15  
–15  
–15  
–15  
–15  
–16  
–15  
–16  
–16  
–17  
–17  
–17  
–17  
–17  
–18  
–18  
–18  
–18  
–19  
–19  
–19  
810  
820  
830  
840  
850  
860  
870  
880  
890  
900  
910  
920  
930  
940  
950  
960  
970  
980  
990  
1000  
1010  
1020  
1030  
1040  
1050  
24  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 5. High-band LNA S-parameters  
Freq (MHz)  
1800  
1810  
1820  
1830  
1840  
1850  
1860  
1870  
1880  
1890  
1900  
1910  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
2010  
2020  
2030  
2040  
2050  
|S11| (U)  
0.38  
0.37  
0.37  
0.37  
0.36  
0.36  
0.35  
0.35  
0.34  
0.33  
0.33  
0.33  
0.32  
0.32  
0.32  
0.32  
0.32  
0.32  
0.31  
0.32  
0.31  
0.31  
0.31  
0.31  
0.31  
0.31  
<S11 (deg)  
156  
156  
155  
154  
155  
154  
155  
154  
152  
154  
153  
154  
153  
154  
153  
153  
154  
155  
154  
156  
155  
156  
157  
158  
158  
159  
|S21| (U)  
6.73  
6.77  
6.82  
6.79  
6.84  
6.80  
6.81  
6.85  
6.84  
6.84  
6.83  
6.83  
6.87  
6.84  
6.86  
6.84  
6.78  
6.80  
6.75  
6.72  
6.68  
6.68  
6.65  
6.63  
6.59  
6.58  
<S21 (deg)  
172  
170  
168  
167  
165  
164  
162  
161  
159  
158  
157  
155  
154  
152  
151  
149  
148  
146  
145  
143  
142  
141  
139  
138  
137  
135  
|S12| (U)  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.04  
0.04  
0.05  
0.05  
0.04  
0.04  
0.05  
0.05  
<S12 (deg)  
105  
113  
109  
107  
106  
102  
108  
101  
102  
107  
102  
101  
102  
99  
|S22| (U)  
<S22 (deg)  
–106  
–100  
–95  
0.13  
0.11  
0.10  
0.10  
0.09  
0.09  
0.10  
0.10  
0.12  
0.13  
0.14  
0.15  
0.17  
0.18  
0.19  
0.21  
0.22  
0.24  
0.26  
0.27  
0.28  
0.30  
0.31  
0.32  
0.33  
0.34  
–88  
–74  
–67  
–51  
–47  
–41  
–36  
–32  
–30  
–28  
–28  
101  
103  
101  
100  
100  
99  
–26  
–26  
–26  
–26  
–26  
–27  
100  
103  
104  
96  
–27  
–30  
–31  
–30  
105  
104  
–32  
–34  
25  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters  
Freq(MHz)  
1700  
1710  
1720  
1730  
1740  
1750  
1760  
1770  
1780  
1790  
1800  
1810  
1820  
1830  
1840  
1850  
1860  
1870  
1880  
1890  
1900  
1910  
1920  
1930  
1940  
1950  
1960  
1970  
1980  
1990  
2000  
2010  
2020  
2030  
2040  
2050  
2060  
2070  
2080  
2090  
|S11| (U)  
0.82  
0.82  
0.82  
0.82  
0.82  
0.83  
0.82  
0.82  
0.82  
0.83  
0.82  
0.82  
0.83  
0.82  
0.82  
0.82  
0.82  
0.82  
0.82  
0.82  
0.82  
0.81  
0.82  
0.81  
0.81  
0.81  
0.81  
0.80  
0.80  
0.80  
0.80  
0.80  
0.80  
0.80  
0.79  
0.79  
0.79  
0.79  
0.78  
0.77  
<S11 (deg)  
–36  
–36  
–37  
–36  
–37  
–37  
–37  
–38  
–38  
–39  
–39  
–39  
–40  
–40  
–41  
–41  
–42  
–42  
–42  
–43  
–43  
–44  
–44  
–45  
–46  
–46  
–47  
–47  
–48  
–48  
–48  
–49  
–50  
–51  
–51  
–52  
–52  
–52  
–53  
–54  
|S22| (U)  
0.31  
0.30  
0.29  
0.29  
0.29  
0.27  
0.26  
0.25  
0.24  
0.24  
0.23  
0.21  
0.20  
0.20  
0.18  
0.16  
0.16  
0.14  
0.12  
0.11  
0.11  
0.08  
0.07  
0.06  
0.04  
0.03  
0.02  
0.03  
0.04  
0.05  
0.07  
0.08  
0.10  
0.12  
0.13  
0.15  
0.16  
0.18  
0.20  
0.21  
<S22 (deg)  
86  
85  
83  
81  
81  
79  
76  
76  
74  
72  
71  
69  
68  
66  
67  
63  
61  
60  
56  
52  
53  
47  
42  
34  
29  
–1  
–21  
–57  
–85  
–103  
–112  
–112  
–119  
–120  
–125  
–127  
–130  
–133  
–135  
–136  
26  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Table 6. High-band LO input (pin 13) and output (pin 9) S-parameters (continued)  
Freq(MHz)  
2100  
2110  
|S11| (U)  
0.78  
0.77  
0.77  
0.77  
0.76  
0.77  
0.76  
0.76  
0.76  
0.76  
0.76  
<S11 (deg)  
–54  
|S22| (U)  
0.23  
0.24  
0.26  
0.27  
0.29  
0.29  
0.31  
0.33  
0.34  
0.35  
0.36  
<S22 (deg)  
–138  
–55  
–139  
2120  
2130  
2140  
2150  
2160  
2170  
2180  
2190  
2200  
–56  
–142  
–57  
–144  
–57  
–144  
–58  
–145  
–58  
–147  
–59  
–148  
–60  
–150  
–60  
–150  
–61  
–152  
27  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm  
SOT355-1  
28  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
NOTES  
29  
1999 Nov 02  
Philips Semiconductors  
Product specification  
Low voltage dual-band RF front-end  
SA3600  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make changes at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1999  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Date of release: 11-99  
Document order number:  
9397-750-06558  
Philips  
Semiconductors  

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