SA5211D/01,112_技术文档

SA5211

Transimpedance ampliﬁer (180 MHz)

Rev. 03 — 07 October 1998

Product speciﬁcation

1. Description

2. Features

The SA5211 is a 28 kΩ transimpedance, wide-band, low noise ampliﬁer with

differential outputs, particularly suitable for signal recovery in ﬁber optic receivers.

The part is ideally suited for many other RF applications as a general purpose gain

block.

■ Extremely low noise: 1.8 pA / √Hz

■ Single 5 V supply

■ Large bandwidth: 180 MHz

■ Differential outputs

■ Low input/output impedances

■ High power supply rejection ratio

■ 28 kΩ differential transresistance

3. Applications

c

■ Fiber optic receivers, analog and digital

■ Current-to-voltage converters

■ Wide-band gain block

■ Medical and scientiﬁc Instrumentation

■ Sensor preampliﬁers

■ Single-ended to differential conversion

■ Low noise RF ampliﬁers

■ RF signal processing

SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

4. Pinning information

4.1 Pinning

D Package

1

2

3

4

5

6

7

14 OUT (–)

GND

2

13

12

11

10

9

GND

2

NC

OUT (+)

GND

1

I

IN

NC

GND

1

V

GND

1

CC1

CC2

8

GND

1

TOP VIEW

SD00318

Fig 1. Pin conﬁguration.

5. Ordering information

Table 1: Ordering information

Type number

Package

Name

Description

Version

Temperature

range (°C)

SA5211D

SO14

plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 −40 to +85

6. Limiting values

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CC

Parameter

Conditions

Min

−

Max

6

Unit

V

power supply

T_amb

operating ambient

temperature range

-40

+85

°C

T_J

operating junction

temperature range

-55

+150

°C

T_STG

storage temperature range

-65

+150

1.0

°C

P_{D MAX}

power dissipation, T_A= 25 °C

(still-air)^[1]

−

W

I_{IN MAX}

maximum input current^[2]

−

5

mA

θ_JA

thermal resistance

125

°C/W

[1] Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:

θ_JA= 125 °C/W

[2] The use of a pull-up resistor to V_CC, for the PIN diode is recommended.

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Product speciﬁcation

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Table 3: Recommended operating conditions

Symbol

Parameter

Conditions

Min

4.5

-40

Max

5.5

Unit

V

V_CC

T_amb

T_J

supply voltage

ambient temperature range

junction temperature range

+85

+105

°C

7. Static characteristics

Table 4: DC electrical characteristics

Min and Max limits apply over operating temperature range at V_CC= 5 V, unless otherwise speciﬁed. Typical data apply at

V_CC= 5 V and T_amb= 25 °C.

Symbol

V_IN

Parameter

Test conditions

Min

0.55

2.7

−

Typ

0.8

3.4

0

Max

1.00

3.7

130

31

Unit

V

input bias voltage

output bias voltage

output offset voltage

supply current

V_O±

V

V_OS

I_CC

mV

mA

µA

20

26

4

I_OMAX

I_IN

output sink/source current^[1]

3

−

input current

(2% linearity)

Test Circuit 8,

Procedure 2

±20

±40

−

I_{IN MAX}

maximum input current

overload threshold

Test Circuit 8,

Procedure 4

±30

±60

−

µA

[1] Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.

8. Dynamic characteristics

Table 5: AC electrical characteristics

Typical data and Min and Max limits apply at V_CC= 5 V and T_amb= 25 °C

Symbol Parameter

Test conditions

Min Typ Max Unit

R_T

transresistance (differential output)

DC tested RL = ∞

21

28

36

kΩ

Test Circuit 8, Procedure 1

R_O

R_T

output resistance (differential output)

transresistance (single-ended output)

DC tested

−

30

−

Ω

DC tested

10.5 14

18.0 kΩ

RL = ∞

R_O

output resistance (single-ended output)

bandwidth (-3dB)

DC tested

−

15

−

Ω

f_3dB

T_A= 25°C

180

MHz

Test circuit 1

R_IN

input resistance

−

200

4

−

Ω

C_IN

input capacitance

pF

∆R/∆V

∆R/∆T

I_N

transresistance power supply sensitivity

V_CC= 5±0.5 V

3.7

%/V

%/°C

pA/√Hz

transresistance ambient temperature sensitivity ∆T_amb= T_{amb MAX}-T_{amb MIN}

0.025 −

RMS noise current spectral density (referred to Test Circuit 2

1.8

−

input)

f = 10 MHz

TA = 25 °C

I_T

integrated RMS noise current over the

bandwidth (referred to input)

TA = 25 °C

Test Circuit 2

−

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Table 5: AC electrical characteristics…continued

Typical data and Min and Max limits apply at V_CC= 5 V and T_amb= 25 °C

Symbol Parameter

Test conditions

Min Typ Max Unit

I_n

C_S= 0^[1]

∆f = 50 MHz

∆f = 100 MHz

∆f = 200 MHz

−

13

20

35

−

nA

dB

I_n

C_S= 1pF

∆f = 50 MHz

∆f = 100 MHz

∆f = 200 MHz

−

13

21

41

−

PSRR

power supply rejection ratio^[2]

(V_CC1= V_CC2

DC tested, ∆V_CC= 0.1V

Equivalent AC

Test Circuit 3

23

45

32

65

−

)

power supply rejection ratio^[2](V_CC1

)

DC tested, ∆V_CC= 0.1V

Equivalent AC

Test Circuit 4

power supply rejection ratio^[2](V_CC2

DC tested, ∆V_CC= 0.1V

Equivalent AC

Test Circuit 5

PSRR

V_OMAX

V_{IN MAX}

t_R

power supply rejection ratio (ECL

conﬁguration)^[2]

f = 0.1 MHz

Test Circuit 6

−

23

3.2

−

dB

maximum differential output voltage swing

RL = ∞

Test Circuit 8, Procedure 3

1.7

160

−

V_P-P

mV_P-P

ns

maximum input amplitude for output duty cycle

of 50±5%^[3]

rise time for 50mV output signal^[4]

Test Circuit 7

−

Test Circuit 7

0.8

1.8

[1] Package parasitic capacitance amounts to about 0.2pF

[2] PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF ﬁlter in V_CClines.

[3] Guaranteed by linearity and overload tests.

[4] t_Rdeﬁned as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

9. Test circuits

SINGLE-ENDED

DIFFERENTIAL

NETWORK ANALYZER

V

OUT

V

IN

OUT

R = 2 × S21 × R

R

T

=

R = 4 × S21 × R

R

T

≈

IN

S-PARAMETER TEST SET

5V

1 + S22

– 33

1 + S22

– 66

R

= 2Z

O

R

≈

Z

O

1 – S22

PORT 1

PORT 2

V

CC2

CC1

0.1µF

Z

= 50

33

O

OUT

0.1µF

R = 1k

Z

= 50

O

IN DUT

33

R

50

L

GND

1

2

Test Circuit 1

SPECTRUM ANALYZER

5V

A

V

= 60DB

V

CC2

CC1

0.1µF

Z

= 50

O

33

OUT

IN DUT

NC

33

R

L

GND

1

2

Test Circuit 2

SD00319

Fig 2. Test circuits 1 and 2.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

NETWORK ANALYZER

5V

S-PARAMETER TEST SET

10µF

0.1µF

PORT 1

PORT 2

CURRENT PROBE

1mV/mA

10µF

0.1µF

16

CAL

V

CC1

CC2

0.1µF

33

OUT

50

UNBAL.

TEST

100

BAL.

IN

TRANSFORMER

NH0300HB

OUT

GND

2

1

Test Circuit 3

NETWORK ANALYZER

5V

S-PARAMETER TEST SET

10µF

0.1µF

PORT 1

PORT 2

CURRENT PROBE

1mV/mA

10µF

0.1µF

16

CAL

5V

V

10µF

CC2

CC1

0.1µF

33

OUT

50

0.1µF

IN

TEST

100

BAL.

TRANSFORMER

NH0300HB

UNBAL.

OUT

GND

2

1

Test Circuit 4

SD00320

Fig 3. Test circuits 3 and 4.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

NETWORK ANALYZER

5V

S-PARAMETER TEST SET

10µF

0.1µF

PORT 1

PORT 2

CURRENT PROBE

1mV/mA

10µF

0.1µF

16

CAL

5V

V

10µF

CC1

CC2

0.1µF

33

OUT

50

UNBAL.

0.1µF

TEST

100

BAL.

IN

TRANSFORMER

NH0300HB

OUT

GND

2

1

Test Circuit 5

NETWORK ANALYZER

S-PARAMETER TEST SET

GND

PORT 1

PORT 2

CURRENT PROBE

1mV/mA

10µF

0.1µF

16

CAL

GND

1

2

0.1µF

33

OUT

50

TEST

100

BAL.

IN

TRANSFORMER

NH0300HB

UNBAL.

OUT

V

CC1

CC2

5.2V

10µF

0.1µF

Test Circuit 6

SD00321

Fig 4. Test circuits 5 and 6.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

PULSE GEN.

V

CC2

CC1

0.1µF

33

OUT

A

B

Z

= 50Ω

0.1µF

IN

O

1k

DUT

OSCILLOSCOPE

= 50Ω

Z

O

50

Measurement done using

differential wave forms

GND

2

1

Test Circuit 7

SD00322

Fig 5. Test circuit 7.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Typical Differential Output Voltage

vs Current Input

5V

+

OUT +

V

(V)

OUT

IN

DUT

OUT –

–

I

(µA)

IN

GND

2

1

2.00

1.60

1.20

0.80

0.40

0.00

–0.40

–0.80

–1.20

–1.60

–2.00

–100

–80

–60

–40

–20

0

20

40

60

80

100

CURRENT INPUT (µA)

NE5211 TEST CONDITIONS

Procedure 1

R

measured at 15µA

T

= (V – V )/(+15µA – (–15µA))

O1 O2

T

Where: V Measured at I = +15µA

O1 IN

V

Measured at I = –15µA

IN

O2

Procedure 2

Linearity = 1 – ABS((V – V ) / (V – V ))

OA OB O3 O4

Where: V Measured at I = +30µA

O3 IN

V

Measured at I = –30µA

IN

O4

V

= R × (+ 30µA) + V

OB

OA

OB

T

V

= R × (– 30µA) + V

T OB

Procedure 3

Procedure 4

V

= V – V

O7

OMAX

O8

Where: V Measured at I = +65µA

O7 IN

V

Measured at I = –65µA

IN

O8

I

IN

Test Pass Conditions:

V

– V > 20mV and V – V > 50mV

O5 06 O5

O7

Where: V Measured at I = +40µA

O5 IN

V

Measured at I = –400µA

IN

O6

O7

O8

V

Measured at I = +65µA

IN

Measured at I = –65µA

IN

SD00331

Test Circuit 8

Fig 6. Test circuit 8.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

10. Typical performance characteristics

Fig 7. Typical performance characteristics.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Fig 8. Typical performance characteristics. (cont.)

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Fig 9. Typical performance characteristics. (cont.)

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Fig 10. Typical performance characteristics. (cont.)

11. Theory of operation

Transimpedance ampliﬁers have been widely used as the preampliﬁer in ﬁber-optic

receivers. The SA5211 is a wide bandwidth (typically 180 MHz) transimpedance

ampliﬁer designed primarily for input currents requiring a large dynamic range, such

as those produced by a laser diode. The maximum input current before output stage

clipping occurs at typically 50µA. The SA5211 is a bipolar transimpedance ampliﬁer

which is current driven at the input and generates a differential voltage signal at the

outputs. The forward transfer function is therefore a ratio of the differential output

voltage to a given input current with the dimensions of ohms. The main feature of this

ampliﬁer is a wideband, low-noise input stage which is desensitized to photodiode

capacitance variations. When connected to a photodiode of a few picoFarads, the

frequency response will not be degraded signiﬁcantly. Except for the input stage, the

entire signal path is differential to provide improved power-supply rejection and ease

of interface to ECL type circuitry. A block diagram of the circuit is shown in Figure 11.

The input stage (A1) employs shunt-series feedback to stabilize the current gain of

the ampliﬁer. The transresistance of the ampliﬁer from the current source to the

emitter of Q₃is approximately the value of the feedback resistor, R_F= 14.4 kΩ. The

gain from the second stage (A2) and emitter followers (A3 and A4) is about two.

Therefore, the differential transresistance of the entire ampliﬁer, R_Tis

V_OUT(diff)

R_T= ----------------------------- = 2 R_F= 2(14.4 K) = 28.8 kΩ

(1)

I_IN

The single-ended transresistance of the ampliﬁer is typically 14.4 kΩ.

The simpliﬁed schematic in Figure 12 shows how an input current is converted to a

differential output voltage. The ampliﬁer has a single input for current which is

referenced to Ground 1. An input current from a laser diode, for example, will be

converted into a voltage by the feedback resistor R_F. The transistor Q1 provides most

of the open loop gain of the circuit, A_VOL≈70. The emitter follower Q₂minimizes

loading on Q₁. The transistor Q₄, resistor R₇, and V_B1provide level shifting and

interface with the Q₁₅– Q₁₆differential pair of the second stage which is biased with

an internal reference, V_B2. The differential outputs are derived from emitter followers

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Q₁₁– Q₁₂which are biased by constant current sources. The collectors of Q₁₁– Q₁₂

are bonded to an external pin, V_CC2, in order to reduce the feedback to the input

stage. The output impedance is about 17Ω single-ended. For ease of performance

evaluation, a 33Ω resistor is used in series with each output to match to a 50Ω test

system.

12. Bandwidth calculations

The input stage, shown in Figure 13, employs shunt-series feedback to stabilize the

current gain of the ampliﬁer. A simpliﬁed analysis can determine the performance of

the ampliﬁer. The equivalent input capacitance, C_IN, in parallel with the source, I_S, is

approximately 4 pF (typical), assuming that C_S= 0 where C_Sis the external source

capacitance.

Since the input is driven by a current source the input must have a low input

resistance. The input resistance, R_IN, is the ratio of the incremental input voltage, V_IN,

to the corresponding input current, I_INand can be calculated as:

V_IN

R_IN= --------- = ----------------------- =

I_IN1 + A_VOL

R_F

14.4 kΩ

-------------------

71

= 203Ω

(2)

(3)

(4)

Thus C_INand R_INwill form the dominant pole of the entire ampliﬁer;

1

f_–3db

=

-------------------------

2πR_INC_IN

Assuming typical values for R_F= 14.4 kΩ, R_IN= 200 Ω, C_IN= 4 pF

1

f_–3db

=

= 200 MHz

--------------------------------------

2π 4 pF 200 Ω

The operating point of Q1, Figure 12, has been optimized for the lowest current noise

without introducing a second dominant pole in the pass-band. All poles associated

with subsequent stages have been kept at sufﬁciently high enough frequencies to

yield an overall single pole response. Although wider bandwidths have been achieved

by using a cascade input stage conﬁguration, the present solution has the advantage

of a very uniform, highly desensitized frequency response because the Miller effect

dominates over the external photodiode and stray capacitances. For example,

assuming a source capacitance of 1 pF, input stage voltage gain of 70, R_IN= 60 Ω

then the total input capacitance, C_IN= (1 + 4) pF which will lead to only a 20%

bandwidth reduction.

13. Noise

Most of the currently installed ﬁber-optic systems use non-coherent transmission and

detect incident optical power. Therefore, receiver noise performance becomes very

important. The input stage achieves a low input referred noise current (spectral

density) of 1.8 pA/√Hz (typical). The transresistance conﬁguration assures that the

external high value bias resistors often required for photodiode biasing will not

contribute to the total noise system noise. The equivalent input _RMSnoise current is

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

strongly determined by the quiescent current of Q₁, the feedback resistor R_F, and the

bandwidth; however, it is not dependent upon the internal Miller-capacitance. The

measured wideband noise was 41 nA RMS in a 200 MHz bandwidth.

14. Dynamic range calculations

The electrical dynamic range can be deﬁned as the ratio of maximum input current to

the peak noise current:

Electrical dynamic range, D_E, in a 200 MHz bandwidth assuming I_INMAX= 60 µA and

a wideband noise of I_EQ= 41 nA_RMSfor an external source capacitance of C_S= 1 pF.

(Max. input current)

(Peak noise current)

D_E

=

(5)

(6)

(7)

------------------------------------------------

(60 × 10^–6

)

D (dB) = 20 log

----------------------------

E

–9

( 2 41 10

)

(60 µA)

D_E(dB) = 20 log -------------------- = 60db

(58 nA)

In order to calculate the optical dynamic range the incident optical power must be

considered.

For a given wavelength λ;

hc

λ

Energy of one Photon =

watt sec (Joule)

-----

Where h = Planck’s Constant = 6.6 × 10^-34Joule sec.

c = speed of light = 3 × 10⁸m/sec

c / λ = optical frequency

P

-----

hc

No. of incident photons/sec = ----- where P = optical incident power

λ

P

-----

hc

λ

No. of generated electrons/sec = η ×

-----

where η = quantum efﬁciency

no. of generated electron hole pairs

------------------------------------------------------------------------------------

=

no. of incident photons

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

P

-----

hc

-----

λ

I = η ×

× e Amps (Coulombs/sec.)

where e = electron charge = 1.6 × 10^-19Coulombs

η × e

------------

hc

λ

Responsivity R =

Amp/watt

------------

I = P × R

Assuming a data rate of 400 Mbaud (Bandwidth, B = 200 MHz), the noise parameter

Z_nmay be calculated as:¹

41 × 10^–9

(1.6 × 10^–19)(200 × 10⁶)

I_EQ

Z =

=

= 1281

(8)

-------

------------------------------------------------------------

qB

where Z is the ratio of _RMSnoise output to the peak response to a single hole-electron

pair. Assuming 100% photodetector quantum efﬁciency, half mark/half space digital

transmission, 850nm lightwave and using Gaussian approximation, the minimum

required optical power to achieve 10^-9BER is:

hc

P_avMIN= 12 BZ = 12 × 2.3 × 10^–19

-----

λ

200 × 10⁶(1281) = 719 nW = –31.5 dBm = 1139 nW = –29.4 dBm

(9)

where h is Planck’s Constant, c is the speed of light, λ is the wavelength. The

minimum input current to the SA5211, at this input power is:

λ

1

Joule

sec

707 × 10^–9× 1.6 × 10^–19

-----

I_avMIN= qP

×

× q = l =

= 500 nA

(10)

------------ ------------

----------------------------------------------------------

^avMINhc Joule

2.3 × 10^–19

Choosing the maximum peak overload current of I_avMAX= 60 µA, the maximum mean

optical power is:

2.3 × 10^–19

1.6 × 10^–19

hcl_avMAX

P_avMAX= --------------------- =

60 × 10 µA = 86 µW or – 10.6 dBm (optical)

(11)

(12)

--------------------------

λq

Thus the optical dynamic range, D_Ois:

D_O= P_avMAX– P_avMIN= – 4.6 – (–29.4) = 24.8 dB

D_O= P_avMAX– P_avMIN= – 31.5 – (–10.6)

1. S.D. Personick, Optical Fiber Transmission Systems, Plenum Press, NY, 1981, Chapter 3.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

OUTPUT +

A3

INPUT

A1

A2

R

F

A4

OUTPUT –

SD00327

Fig 11. SA5211 – Block diagram.

This represents the maximum limit attainable with the SA5211 operating at 200 MHz

bandwidth, with a half mark/half space digital transmission at 850nm wavelength.

V

CC1

V

CC2

R

13

1

3

12

Q

11

2

4

INPUT

+

Q

12

3

Q

1

Q

OUT–

OUT+

15

16

R

2

R

14

15

GND

1

R

+

7

PHOTODIODE

VB2

R

5

R

4

GND

2

SD00328

Fig 12. Transimpedance ampliﬁer.

V

CC

I

R3

C1

R1

INPUT

Q2

I

B

I

Q3

IN

Q1

R2

I

V

F

EQ3

V

IN

R

F

R4

SD00329

Fig 13. Shunt-series input stage.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

15. Application information

Package parasitics, particularly ground lead inductances and parasitic capacitances,

can signiﬁcantly degrade the frequency response. Since the SA5211 has differential

outputs which can feed back signals to the input by parasitic package or board layout

capacitances, both peaking and attenuating type frequency response shaping is

possible. Constructing the board layout so that Ground 1 and Ground 2 have very low

impedance paths has produced the best results. This was accomplished by adding a

ground-plane stripe underneath the device connecting Ground 1, Pins 8-11, and

Ground 2, Pins 1 and 2 on opposite ends of the SO14 package. This ground-plane

stripe also provides isolation between the output return currents ﬂowing to either

V_CC2or Ground 2 and the input photodiode currents to ﬂowing to Ground 1. Without

this ground-plane stripe and with large lead inductances on the board, the part may

be unstable and oscillate near 800 MHz. The easiest way to realize that the part is

not functioning normally is to measure the DC voltages at the outputs. If they are not

close to their quiescent values of 3.3 V (for a 5 V supply), then the circuit may be

oscillating. Input pin layout necessitates that the photodiode be physically very close

to the input and Ground 1. Connecting Pins 3 and 5 to Ground 1 will tend to shield the

input but it will also tend to increase the capacitance on the input and slightly reduce

the bandwidth.

As with any high-frequency device, some precautions must be observed in order to

enjoy reliable performance. The ﬁrst of these is the use of a well-regulated power

supply. The supply must be capable of providing varying amounts of current without

signiﬁcantly changing the voltage level. Proper supply bypassing requires that a good

quality 0.1 µF high-frequency capacitor be inserted between V_CC1and V_CC2

,

preferably a chip capacitor, as close to the package pins as possible. Also, the

parallel combination of 0.1 µF capacitors with 10 µF tantalum capacitors from each

supply, V_CC1and V_CC2, to the ground plane should provide adequate decoupling.

Some applications may require an RF choke in series with the power supply line.

Separate analog and digital ground leads must be maintained and printed circuit

board ground plane should be employed whenever possible.

Figure 14 depicts a 50 Mb/s TTL ﬁber-optic receiver using the BPF31, 850 nm LED,

the SA5211 and the SA5214 post ampliﬁer.

9397 750 07427

Product speciﬁcation

Rev. 03 — 07 October 1998

18 of 28

SA5211

Transimpedance ampliﬁer (180 MHz)

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+V

CC

GND

47µF

C1

C2

.01µF

L1

10µH

C5

1.0µF

R1

100

D1

R2

C7

LED

220

LED

C

GND

1

20

19

V

IN

8

9

7

6

CC

1B

1A

100pF

C9

C3

10µF

.01µF

C4

.01µF

2

PKDET

GND

IN

CC

NC

100pF

C8

THRESH

3

18

10

11

5

4

C

C6

AZP

GND

A

I

IN

4

5

17

16

0.1µF

AZN

BPF31

OPTICAL

INPUT

R3

47k

FLAG

JAM

NC

OUT

12

13

3

2

1B

L2

10µH

6

7

15

14

GND

OUT

IN

8B

V

CCD

OUT

14

1

1A

C11

C10

V

CCA

8

13

12

¹⁰µF

.01µF

IN

R

8A

GND

D

9

HYST

R

TTL

10

11

C12

10µF

PKDET

OUT

L3

10µH

C13

.01µF

R4

4k

V

(TTL)

OUT

SD00330

The NE5210/NE5217 combination can operate at data rates in excess of 100 Mb/s NRZ

The capacitor C7 decreases the NE5210 bandwidth to improve overall S/N ratio in the DC-50 MHz band, but does create extra

high frequency noise on the NE5210 V_CCpin(s).

Fig 14. A 50Mb/s ﬁber optic receiver.

9397 750 07427

Product speciﬁcation

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Fig 15. SA5211 Bonding diagram.

15.1 Die sales disclaimer

Due to the limitations in testing high frequency and other parameters at the die level,

and the fact that die electrical characteristics may shift after packaging, die electrical

parameters are not speciﬁed and die are not guaranteed to meet electrical

characteristics (including temperature range) as noted in this data sheet which is

intended only to specify electrical characteristics for a packaged device.

All die are 100% functional with various parametrics tested at the wafer level, at room

temperature only (25°C), and are guaranteed to be 100% functional as a result of

electrical testing to the point of wafer sawing only. Although the most modern

9397 750 07427

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Rev. 03 — 07 October 1998

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SA5211

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Philips Semiconductors

processes are utilized for wafer sawing and die pick and place into wafﬂe pack

carriers, it is impossible to guarantee 100% functionality through this process. There

is no post wafﬂe pack testing performed on individual die.

Since Philips Semiconductors has no control of third party procedures in the handling

or packaging of die, Philips Semiconductors assumes no liability for device

functionality or performance of the die or systems on any die sales.

Although Philips Semiconductors typically realizes a yield of 85% after assembling

die into their respective packages, with care customers should achieve a similar yield.

However, for the reasons stated above, Philips Semiconductors cannot guarantee

this or any other yield on any die sales.

9397 750 07427

Product speciﬁcation

Rev. 03 — 07 October 1998

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

16. Package outline

SO14: plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

D

E

A

X

v

c

y

H

M

A

E

Z

8

14

Q

A

2

A

(A )

3

A

1

pin 1 index

θ

L

p

L

1

7

e

detail X

w

M

b

p

0

2.5

scale

5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

(1)

UNIT

A

b

c

D

E

e

H

L

p

Q

v

w

y

Z

θ

1

2

3

p

E

max.

0.25

0.10

1.45

1.25

0.49

0.36

0.25

0.19

8.75

8.55

4.0

3.8

6.2

5.8

1.0

0.4

0.7

0.6

0.7

0.3

mm

1.75

1.27

0.050

1.05

0.25

0.01

0.25

0.1

0.25

0.01

8^o

0^o

0.010 0.057

0.004 0.049

0.019 0.0100 0.35

0.014 0.0075 0.34

0.16

0.15

0.244

0.228

0.039 0.028

0.016 0.024

0.028

0.012

inches

0.041

0.01 0.004

0.069

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-05-22

99-12-27

SOT108-1

076E06

MS-012

Fig 16. SOT108-1.

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

17. Soldering

17.1 Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology. A more in-depth account

of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit

Packages (document order number 9398 652 90011).

There is no soldering method that is ideal for all surface mount IC packages. Wave

soldering can still be used for certain surface mount ICs, but it is not suitable for ﬁne

pitch SMDs. In these situations reﬂow soldering is recommended.

17.2 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and

binding agent) to be applied to the printed-circuit board by screen printing, stencilling

or pressure-syringe dispensing before package placement.

Several methods exist for reﬂowing; for example, convection or convection/infrared

heating in a conveyor type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending on heating method.

Typical reﬂow peak temperatures range from 215 to 250 °C. The top-surface

temperature of the packages should preferable be kept below 220 °C for thick/large

packages, and below 235 °C small/thin packages.

17.3 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices

(SMDs) or printed-circuit boards with a high component density, as solder bridging

and non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally

developed.

If wave soldering is used the following conditions must be observed for optimal

results:

Use a double-wave soldering method comprising a turbulent wave with high

upward pressure followed by a smooth laminar wave.

•

For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

parallel to the transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

transport direction of the printed-circuit board.

The footprint must incorporate solder thieves at the downstream end.

For packages with leads on four sides, the footprint must be placed at a 45° angle

to the transport direction of the printed-circuit board. The footprint must

incorporate solder thieves downstream and at the side corners.

•

9397 750 07427

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SA5211

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Philips Semiconductors

During placement and before soldering, the package must be ﬁxed with a droplet of

adhesive. The adhesive can be applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time is 4 seconds at 250 °C. A mildly-activated ﬂux will eliminate the

need for removal of corrosive residues in most applications.

17.4 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low

voltage (24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time

must be limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within

2 to 5 seconds between 270 and 320 °C.

17.5 Package related soldering information

Table 6: Suitability of surface mount IC packages for wave and reﬂow soldering

methods

Package

Soldering method

Wave

Reﬂow^[1]

suitable

BGA, HBGA, LFBGA, SQFP, TFBGA

not suitable

not suitable^[2]

HBCC, HLQFP, HSQFP, HSOP, HTQFP,

HTSSOP, HVQFN, SMS

PLCC^[3], SO, SOJ

LQFP, QFP, TQFP

SSOP, TSSOP, VSO

suitable

not recommended^{[3] [4]}

not recommended^[5]

[1] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the

maximum temperature (with respect to time) and body size of the package, there is a risk that internal

or external package cracks may occur due to vaporization of the moisture in them (the so called

popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated

Circuit Packages; Section: Packing Methods.

[2] These packages are not suitable for wave soldering as a solder joint between the printed-circuit board

and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top

version).

[3] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave

direction. The package footprint must incorporate solder thieves downstream and at the side corners.

[4] Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger

than 0.8 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

[5] Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

9397 750 07427

Product speciﬁcation

Rev. 03 — 07 October 1998

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

18. Revision history

Table 7: Revision history

Rev Date

CPCN

Description

03 19981007

853-1799 20142 Product speciﬁcation; third version; supersedes second version SA5211_2 of

1998 Oct 07 (9397 750 04624). Modiﬁcations:

The format of this speciﬁcation has been redesigned to comply with Philips

Semiconductors’ new presentation and information standard.

02 19981007

01 19950426

853-1799 20142 Product speciﬁcation; second version; supersedes ﬁrst version SA5211_1 of

1995 Apr 26. Modiﬁcations:

Changed preﬁx from NE to SA.

853-1799 15170 Product speciﬁcation; initial version.

9397 750 07427

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SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

19. Data sheet status

[1]

[2]

Data sheet status

Product status

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors

reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

Production

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to

improve the design and supply the best possible product.

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure

SNW-SQ-650A.

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

20. Deﬁnitions

21. Disclaimers

Short-form speciﬁcation — The data in

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

a

short-form speciﬁcation is

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes, without notice, in the products, including circuits, standard

cells, and/or software, described or contained herein in order to improve

design and/or performance. Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products

are free from patent, copyright, or mask work right infringement, unless

otherwise speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

9397 750 07427

Product speciﬁcation

Rev. 03 — 07 October 1998

26 of 28

SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Philips Semiconductors - a worldwide company

Argentina: see South America

Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399

New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811

Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341

Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474

Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Tel. +43 160 101, Fax. +43 160 101 1210

Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102

Canada: Tel. +1 800 234 7381

Romania: see Italy

Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700

Colombia: see South America

Czech Republic: see Austria

Slovenia: see Italy

Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044

Finland: Tel. +358 961 5800, Fax. +358 96 158 0920

France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638

Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300

Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800

India: Tel. +91 22 493 8541, Fax. +91 22 493 8722

Indonesia: see Singapore

South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849

Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107

Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745

Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730

Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874

Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447

Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: Tel. +1 800 234 7381

Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200

Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007

Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057

Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415

Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880

Mexico: Tel. +9-5 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553

Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Marketing Communications,

Internet: http://www.semiconductors.philips.com

Building BE, P.O. Box 218, 5600 MD EINDHOVEN,

The Netherlands, Fax. +31 40 272 4825

(SCA72)

9397 750 07427

Product speciﬁcation

Rev. 03 — 07 October 1998

27 of 28

SA5211

Transimpedance ampliﬁer (180 MHz)

Philips Semiconductors

Contents

1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

Dynamic characteristics . . . . . . . . . . . . . . . . . . 3

Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Typical performance characteristics . . . . . . . 10

Theory of operation . . . . . . . . . . . . . . . . . . . . 13

Bandwidth calculations . . . . . . . . . . . . . . . . . 14

Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Dynamic range calculations . . . . . . . . . . . . . 15

Application information. . . . . . . . . . . . . . . . . . 18

Die sales disclaimer . . . . . . . . . . . . . . . . . . . . 20

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22

2

3

4

4.1

5

6

7

8

9

10

11

12

13

14

15

15.1

16

17

17.1

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Introduction to soldering surface mount

packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23

Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 23

Manual soldering . . . . . . . . . . . . . . . . . . . . . . 24

Package related soldering information . . . . . . 24

17.2

17.3

17.4

17.5

18

19

20

21

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 25

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 26

Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Printed in the U.S.A

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 07 October 1998

Document order number: 9397 750 07427


型号：	SA5211D/01,112
厂家：	NXP
描述：	IC SPECIALTY TELECOM CIRCUIT, PDSO14, PLASTIC, SO-14, Telecom IC:Other 电信光电二极管电信集成电路
文件：	总29页 (文件大小：313K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SA5211D/01,112 [NXP]

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