SA57001-28GW [NXP]
IC VREG 2.8 V FIXED POSITIVE LDO REGULATOR, 0.2 V DROPOUT, PDSO5, 1.60 MM, PLASTIC, MO-178, SOT-23, SOP-5, Fixed Positive Single Output LDO Regulator;
| 型号： | SA57001-28GW |
| 厂家： | 
NXP |
| 描述： | IC VREG 2.8 V FIXED POSITIVE LDO REGULATOR, 0.2 V DROPOUT, PDSO5, 1.60 MM, PLASTIC, MO-178, SOT-23, SOP-5, Fixed Positive Single Output LDO Regulator 光电二极管 |
| 文件： | 总15页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
SA57001-XX
Microminiature, low power consumption,
low dropout regulator
Product data
2003 Oct 16
Supersedes data of 2003 Mar 20
Philips
Semiconductors
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
GENERAL DESCRIPTION
The SA57001-XX is a series of micro-miniature linear regulators
providing fixed output voltages with a precision accuracy of ±2% at
output currents up to 200 mA. The regulator is designed to serve as
a post regulator in microprocessor power supplies. The device has
an ON/OFF pin for output On/Off control, and a Noise pin which can
be used to bypass the internal voltage reference node for enhanced
noise reduction.
The SA57001 has a dropout voltage of only 0.1 V (typical) while
delivering 50 mA of output current. The maximum no load quiescent
current is less than 190 µA in the ON state. The device has thermal
shutdown and output current limiting circuits to prevent damage from
overheating and short circuits. The SA57001 regulator series is
available in the small outline 5-lead package (SOP003).
FEATURES
• No load quiescent current of 95 µA
APPLICATIONS
• Cordless phones
• 0.1 V typical (I = 50 mA) dropout voltage
• Portable minidiscs
O
• 70 dB typical ripple rejection
• Other battery-operated equipment.
• 200 mA maximum output current
• 35 µV
(typical)
rms
• Preset output voltages of 2.0, 2.5, 2.8, 3.0, 3.1, 3.3, 3.6, 4.5, 4.8,
5.0 V available
• Output current limiting
• Thermal shutdown protection
• Output ON/OFF control.
SIMPLIFIED SYSTEM DIAGRAM
V
V
OUT
IN
4
OUTPUT (±2%)
5
THERMAL
PROTECT
CURRENT
LIMIT
DRIVER
C
OUT
ON/OFF
4.7 µF
(ALUMINUM
ELECTROLYTIC)
1
3
NOISE
V
GND
REF
2
0.01 µF
CERAMIC
(OPTIONAL)
SA57001-XX
SL01418
Figure 1. Simplified system diagram.
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2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TEMPERATURE
RANGE
DESCRIPTION
VERSION
SOP003
SA57001-XXGW plastic small outline package; 5 leads (see dimensional drawing)
–40 to +85 °C
NOTE:
Marking code
The device has ten voltage output options, indicated by the XX on
the Type Number.
Each device is marked with a four letter code. The first three letters
designate the product. The fourth, represented by an ‘x’, designates
the date tracking code.
XX
20
25
28
30
31
33
36
45
48
50
VOLTAGE (Typical)
2.0 V
Part
Marking
ADKx
AMFx
ADJx
SA57001-20GW
SA57001-25GW
SA57001-28GW
SA57001-30GW
SA57001-31GW
SA57001-33GW
SA57001-36GW
SA57001-45GW
SA57001-48GW
SA57001-50GW
2.5 V
2.8 V
3.0 V
ADGx
ADFx
ADEx
ADHx
ADDx
ADLx
ADCx
3.1 V
3.3 V
3.6 V
4.5 V
4.8 V
5.0 V
PIN CONFIGURATION
PIN DESCRIPTION
PIN
1
SYMBOL
ON/OFF
GND
DESCRIPTION
Output ON/OFF control pin.
Circuit ground pin.
ON/OFF
GND
1
2
3
5
V
V
IN
2
3
NOISE
Provides option of externally bypassing the
internal voltage reference node for
enhanced noise reduction.
NOISE
4
OUT
4
5
V
V
Voltage regulator output.
OUT
SA00617
Input supply voltage to regulator.
IN
Figure 2. Pin configuration.
MAXIMUM RATINGS
SYMBOL
PARAMETER
MIN.
–0.3
–20
–
MAX.
12
UNIT
V
V
Input supply voltage
IN
T
Operating ambient temperature range
Operating junction temperature
+75
140
+125
150
140
2000
200
230
°C
oper
T
j
°C
T
stg
Storage temperature
–40
–
°C
P
D
Power dissipation
mW
°C/W
V
R
Thermal resistance from junction to ambient
ESD damage threshold (Human Body Model); Note 1
ESD damage threshold (Machine Model); Note 2
Soldering temperature; Note 3
–
th(j-a)
ESD1
ESD2
V
V
–
–
V
T
–
°C
solder
NOTES:
1. Performed in accordance with Human Body Model (CZap = 100 pF, RZap = 1500 Ω).
2. Performed in accordance with Machine Model (CZap = 100 pF, RZap = 0 Ω).
3. 60 second maximum exposure for SMD Reflow temperatures above 183 °C.
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2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
DC ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified.
SYMBOL
PARAMETER
Output voltage
CONDITIONS
+ 1.0 V; I
MIN.
– 2.0%
TYP.
MAX.
V + 2.0%
OUT
UNIT
V
V
V
IN
= V
= 30 mA
V
V
OUT
OUT
OUT
OUT
OUT
I
Output current limit
200
–
240
95
–
mA
µA
LIM
I
Q1
Quiescent current (circuit ON)
V
IN
= V
+ 1.0 V; ON/OFF = V
IN;
190
OUT
I
= 0 mA
OUT
I
Quiescent current (circuit OFF)
Dropout voltage (Note 1)
Line regulation
V
= V
+ 1.0 V; ON/OFF = 0 V
OUT
–
–
–
–
0.1
0.2
20
µA
V
Q2
IN
V
– V
V
= V
+ 0.2 V; I = 50 mA
OUT
0.1
10
IN
OUT
IN
OUT
Reg
V
OUT
+ 1.0 V ≤ V ≤ V + 10 V;
OUT
mV
line
IN
I
= 50 mA
OUT
Reg
Load regulation
V
= V
+ 1.0 V;
≤ 100 mA
–
–
30
100
70
60
–
mV
µV/°C
dB
load
IN
OUT
OUT
0 mA ≤ I
TCV
Temperature coefficient of output
voltage
–20 °C ≤ T ≤ 75 °C;
j
o
V
= V
+ 1.0 V; I
= 30 mA
IN
OUT
OUT
RR
Ripple rejection ratio
V
IN
= V
+ 1.0 V; I
= 1.0 V ; f = 120 Hz
= 30 mA;
50
–
–
OUT
IN(Ripple)
OUT
V
P-P
V
n
Output noise voltage
V
IN
= V
+ 1.0 V; I
= 30 mA;
35
–
µV
rms
OUT
OUT
20 Hz ≤ f ≤ 80 kHz;
C = 0.01 µF
n
I
ON/OFF input current
V
= 1.6 V
–
1.6
–0.3
–
5.0
–
10
µA
ON/OFF
ON/OFF
V
V
ON/OFF threshold (logic HIGH)
ON/OFF threshold (logic LOW)
Thermal shutdown
V
IN
– 0.3 V
0.4
V
V
ON/OFF(H)
ON/OFF(L)
LIM
–
T
125
–
°C
NOTE:
1. Dropout voltage is a measure of the minimum input/output differential voltage at the specified output current.
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2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
TYPICAL PERFORMANCE CURVES
10
400
300
200
100
0
I
– 30 mA
PCB MOUNTED DEVICE
(60 × 40 1.6 mm)
OUT
ON/OFF = V = V
T
+ 1.0 V
IN
OUT
= 25 °C
amb
5.0
V
OUT
UNMOUNTED DEVICE
–5.0
–10
4.0
6.0
8.0
, INPUT VOLTAGE (V)
10
12
–50
–25
0
25
50
75
100
125
V
T , TEMPERATURE (°C)
amb
IN
SL01399
SL01400
Figure 3. Normalized line regulation versus input voltage.
Figure 4. Power dissipation versus temperature.
2.0
9.0
No output load
V
= V
OUT
+ 1.0 V
IN
ON/OFF = V
IN
ON/OFF = V
IN
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
T
amb
= 25 °C
T
amb
= 25 °C
1.5
1.0
0.5
0
Typical 5.0 V Device
Typical 3.0 V Device
Typical 2.0 V Device
0
2.0
4.0
6.0
8.0
10
12
0
20
40
60
80
100
120
140
160
V
, INPUT VOLTAGE (V)
I , OUTPUT CURRENT (mA)
OUT
IN
SL01401
SL01402
Figure 5. Quiescent current versus input voltage.
Figure 6. Ground current versus output current.
300
3.5
3.0
ON/OFF = V = V
+ 1.0 V
IN
OUT
T
= 25 °C
amb
250
200
150
100
50
Shown for V
ON/OFF = V = V
= 3.0 V device
OUT
2.5
2.0
1.5
1.0
0.5
0
+ 1.0 V
IN
OUT
T
amb
= 25 °C
0
0
40
80
120
160
200
0
50
100
I , OUTPUT CURRENT (mA)
OUT
150
200
250
300
I
, OUTPUT CURRENT (mA)
OUT
SL01403
SL01404
Figure 7. Dropout voltage versus output current.
Figure 8. Typical output current limit.
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2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
1000
–10
–20
0 V ≤ V ≤ 12 V
V
V
C
= V
OUT
+ 1.0 V
= 1.0 V
IN
IN
UNSTABLE REGION
STABLE REGION
C
= 47 µF
= 25 °C
OUT
OUT(ripple)
= 47 µF
OUT
– 30 mA
= 25 °C
P-P
T
amb
I
–30
–40
–50
–60
–70
–80
–90
OUT
100
10
T
amb
1.0
UNSTABLE REGION
0.1
0.01
0.1
1.0
, OUTPUT CURRENT (mA)
10
100
10
100
1.0k
10k
100k
1.0M
I
f
(ripple)
, RIPPLE FREQUENCY (Hz)
OUT
SL01411
SL01408
Figure 9. ESR stability versus output current.
Figure 10. Ripple rejection ratio versus frequency.
100
20
V
= V
OUT
+ 1.0 V
V
= V
OUT
+ 1.0 V
IN
IN
I
C
T
= 30 mA
ON/OFF = V
IN
OUT
10
= 47 µF
= 25 °C
C
= 47 µF
OUT
OUT
80
60
40
20
0
T
amb
= 25 °C
amb
V
OUT
–10
–20
–30
–40
–50
0.001
0.01
C , NOISE BYPASS CAPACITANCE (µF)
0.1
0
40
80
, OUTPUT CURRENT (mA)
OUT
120
160
200
I
n
SL01410
SL01406
Figure 11. Output noise versus noise capacitance.
Figure 12. Normalized load regulation.
0.6
0.4
0.2
0
5.075
ON/OFF = V
IN
Typical for 2.0 V ≤ V
≤ 5.0 V devices
OUT
5.050
5.025
5.000
4.975
4.950
I
= 30 mA
OUT
V
= V
OUT
+ 1.0 V
IN
ON/OFF = 0 V (Output OFF)
= 0 mA
I
OUT
V
= 6.0 V
IN
Typical 5.0 V V
device
device
OUT
2.050
V
= 3.0 V
IN
2.025
2.000
1.075
Typical 2.0 V V
OUT
75
–0.2
–50
–25
0
25
50
100
125
–50
–25
0
25
50
75
100
125
T , TEMPERATURE (°C)
amb
T , TEMPERATURE (°C)
amb
SL01409
SL01405
Figure 13. Output voltage versus temperature.
Figure 14. Quiescent current versus temperature.
6
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
250
200
200
Typical for 2.0 V ≤ V
≤ 5.0 V devices
Typical for 2.0 V ≤ V
≤ 5.0 V devices
OUT
OUT
V
= V
OUT
+ 1.0 V
V
= V
OUT
+ 0.2 V
IN
IN
180
160
ON/OFF = V (Output ON)
ON/OFF = V (Output ON)
IN
IN
I
= 0 mA
I
= 60 mA
OUT
OUT
150
100
140
120
100
50
0
80
60
–50
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
T , TEMPERATURE (°C)
amb
T , TEMPERATURE (°C)
amb
SL01413
SL01412
Figure 15. Quiescent current versus temperature.
Figure 16. Dropout voltage versus temperature.
40
1.6
Typical for 2.0 V ≤ V
≤ 5.0 V devices
Typical for 2.0 V ≤ V
≤ 5.0 V devices
OUT
OUT
V
+ 1.0 V ≤ V ≤ V
+ 10 V
V
= V
+ 1.0 V
OUT
IN
OUT
IN
OUT
1.4
1.2
1.0
0.8
0.6
0.4
0.2
30
20
ON/OFF = V (Output ON)
ON/OFF = 0.4 V
IN
I
= 30 mA
OUT
10
0
–10
–20
–50
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
T , TEMPERATURE (°C)
amb
T , TEMPERATURE (°C)
amb
SL01407
SL01414
Figure 17. Line regulation versus temperature.
Figure 18. ON/OFF current versus temperature.
5.5
10
V
= V
+ 1.0 V
IN
OUT
Typical for 2.0 V ≤ V
≤ 5.0 V devices
OUT
ON/OFF = V (Output ON)
0 mA ≤ I
C
IN
V
= V
OUT
+ 1.0 V
IN
≤ 100 mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
OUT
ON/OFF = 1.6 V
= 47 µF
OUT
0
V
OUT
Typical 2.0 V device
–10
–20
–30
Typical 5.0 V device
–50
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
125
T , TEMPERATURE (°C)
amb
T , TEMPERATURE (°C)
amb
SL01416
SL01415
Figure 19. Load regulation variance versus temperature.
Figure 20. ON/OFF pin current versus temperature.
7
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
2.0
Typical for 2.0 V ≤ V
≤ 5.0 V devices
OUT
V
= V
OUT
+ 1.0 V
1.8
1.6
1.4
1.2
IN
HYSTERESIS
V
(V
(HIGH)
ON/OFF
OUT
≥ V
– 2%
OUT
1.0
0.8
V
(LOW)
ON/OFF
(I ≤ 0.1 µA)
IN
0.6
–50
–25
0
25
50
75
100
125
T , TEMPERATURE (°C)
amb
SL01417
Figure 21. ON/OFF threshold versus temperature.
8
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
capacitors are smaller than electrolytic capacitors of the same
TECHNICAL DESCRIPTION
capacitance value. Tantalum capacitors also are not prone to
dry-out. The electrolyte used in electrolytic capacitors tends to dry
out with time, degrading the performance. Avoid using extremely low
ESR film or ceramic capacitors to avoid instability problems. See
Figure 9, ‘ESR stability versus output current’.
The SA57001 is a family of series regulators incorporating a
bandgap reference, two feedback amplifiers, a thermal shutdown
circuit, and an output current limiting circuit. Both feedback
amplifiers are referenced to the bandgap reference. See the device
diagram shown in Figure 22.
Keep in mind that the output capacitor tries to supply any
instantaneous increase in load current from its stored energy. Using
higher values of capacitance will enhance transient load performance
as well as stability. Lowering the ESR of the capacitors will also
improve the transient response to load current changes, but it will
decrease stability.
A PNP transistor in the device’s output serves as the series pass
element. The output PNP pass transistor incorporates a dual
collector.
The first feedback amplifier monitors the first collector’s output
voltage through the use of a voltage divider network fed directly from
the output. The second collector produces a small current that is
proportional to the output current. The proportional current flows
through a resistor, generating a second feedback voltage that is
proportional to the output current. This voltage is fed to the second
feedback amplifier to limit the output current to a safe operating
level.
Noise reduction
The noise reduction pin of the device is connected to the internal
reference voltage node. Bypassing this pin to ground with a
capacitor (0.01 µF typical) will reduce the output voltage noise for
demanding applications. This also improves the AC performance by
increasing ripple rejection.
Both feedback amplifiers act on the same control node, to control
the PNP pass transistor’s conduction. This dual path output
monitoring maintains a constant output voltage while also limiting
the output current.
In addition, bypassing the input pin to ground with a capacitor
(0.1 µF typical) will suppress input ripple form the power source.
Thermal overload protection
Stability factors: Capacitance and ESR
The operating stability of linear regulators is determined by start-up
delay, transient response to load currents, and stability of the
feedback loop. The SA57001 has a fast transient loop response,
with no built-in delay.
When the junction temperature reaches approximately 150 °C, the
thermal sensor signals the shutdown logic to turn off the pass
transistor. After the junction temperature has cooled to below the
thermal threshold, plus the hysteresis, the sensor signals the
shutdown logic to turn the pass transistor on again. This will create a
pulsed output during lengthy thermal overloads.
Capacitors play an important part in compensating the regulator’s
output. A 4.7 µF aluminum electrolytic capacitor is recommended for
most applications, because they provide good performance with
minimal cost. A tantalum capacitor can also be used. Tantalum
NOTE: Thermal overload protection is to protect the device during
fault conditions. Do not exceed the maximum junction-temperature
rating of T = +150 °C during continuous operation.
j
V
V
IN
5
4
OUT
THERMAL
SHUTDOWN
3
1
NOISE
ON/OFF
300 kΩ
400 kΩ
2
GND
SL01419
Figure 22. Functional diagram.
9
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
APPLICATION INFORMATION
Heat dissipation factors
Heat generated within the device is removed to the surrounding
environment by radiation or conduction along several paths. In
general, radiated heat is dissipated directly into the surrounding
ambient from the chip package and leads. Conducted heat flows
through an intermediate material, such as the leads or thermal
grease, to circuit board traces and heat sinks in direct contact with
the device’s package or leads. The circuit board then radiates this
heat to the ambient. For this reason, adequate airflow over the
device and the circuit board is important.
Power dissipation factors
The thermal performance of linear regulators depends on the
following parameters:
Maximum junction temperature (T ) in °C
j
Maximum ambient temperature (T ) in °C
amb
Power dissipation capability of the package in Watts (P )
Junction-to-ambient thermal resistance in °C/W
D
The Maximum Junction Temperature and Maximum Power
Dissipation are both determined by the manufacturer’s process and
device’s design. For the most part the ambient temperature is under
the control of the user. The Maximum Ambient Temperature
depends on the process used by the manufacturer. The package
type and manufacturer’s process determines Junction-to-Ambient
Thermal Resistance.
The SOT23-5 package is too small to easily use external heat sinks
to increase the surface area and enhance the dissipation of
generated heat. Heat dissipation must depend primarily on radiated
heat into the surrounding environment and the heat flow through the
leads into the printed circuit board. Some improvement can be
realized by allowing additional exposed copper on the circuit board
near the device to serve as heat absorbers and dissipaters for the
device.
These parameters are related to each other as shown in the
following equation:
The overall thermal resistance from junction to the surrounding
T = T
+ (P × R
)
th(j-a)
ambient of the package (R
) is made up of three series elements
j
amb
D
th(j-a)
and can be thought of as the total resistance of a series electrical
circuit. These elements are:
The term (P × R
ambient to the internal junction of the device.
) represents the temperature rise from the
th(j-a)
D
R
R
R
= Thermal resistance from Junction-to-Case
= Thermal resistance from Case-to-heat Sink
= Thermal resistance from heat Sink-to-Ambient
th(j-c)
th(c-s)
th(s-a)
Power dissipation calculations
A regulator’s maximum power dissipation can be determined by
using the following equation:
R
is based primarily on the package type and the size of the
th(j-a)
P
= V
I
+ [V
– V ] I
OUT(min) OUT(max)
D(max)
IN(max) G
IN(max)
silicon chip used in the device. The composition of package
materials plays an important part. High heat conductivity materials
produce reduced Junction-to-Case resistances.
where:
V
is the maximum input voltage
IN(max)
R
value is based on the package type, heat sink interface, and
th(c-s)
I
G
is the maximum Ground Current at maximum output current
contact area of the device to the heat sink. The use of thermal
grease or an insulator will increase the transfer of heat from the
case to the heat sink.
V
I
is the minimum output voltage
is the maximum output current
OUT(min)
OUT(max)
(V I ) represents heat generated in the device due to internal
IN(max) G
R
, which is thermal resistance from heat sink to the ambient, is
th(s-a)
circuit biasing, leakage, etc. [V
– V
] is the
OUT(min)
IN(max)
based on heat sink emissivity and airflow over the heat sink to carry
the heat away. The heat sink to ambient heat flow is dependent on
the ability of the surrounding ambient media to absorb the heat.
input-to-output voltage drop across the device due to the I
OUT(max)
current. When multiplied by I
, this represents heat
OUT(max)
generated in the device due to the output load current. Heat
generated by the device represents lost energy (an inefficiency).
The total R
thermal resistance is expressed as:
th(j-a)
The SA57001 device should not be operated under conditions that
would cause a junction temperature of 150 °C to be generated
because the thermal shutdown protection circuit will shut down the
device at or near this temperature.
R
= R
+ R
+ R
th(c-s) th(s-a)
th(j-a)
th(j-c)
The maximum power that a given package can handle is given by:
Tj(max) * Tamb
PD
+
Rth(j*a)
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2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
DEFINITIONS
Line regulation is the change in output voltage caused by a change
in input line voltage. This parameter is measured using pulse
measurement techniques or under conditions of low power
dissipation so as to not significantly upset the thermal dynamics of
the device during test.
Output noise is the integrated output noise voltage specified over a
frequency range and expressed in nV/kHz or V . It is measured
rms
with the input voltage and output load current held constant during
test.
Current limiting is internal device circuitry incorporated to limit the
output current of the device. This feature is incorporated in the
device to protect the device against output over current conditions or
output shorts to ground.
Load regulation is the change in output voltage caused by a
change in output load current and is measured in a manner which
will not cause significant heating of the device during test.
Quiescent current is that current which flows to the ground pin of
the device when the device is operated with no output current
flowing.
Thermal shutdown is internal device circuitry incorporated in the
device to shut down the device when the chip temperature reaches
a specified temperature. This feature protects the device from
excessive operating temperatures that would otherwise be
catastrophic to the device. Over heating can be created by
accidental output shorts.
Ground current is that current which flows to the ground pin of the
device when the device is operated with output current flowing due
to an applied load. It is the measurement difference of input current
minus the output current.
Dropout voltage is the input/output differential voltage at which the
regulator ceases to maintain specified output regulation if the input
voltage is reduced. It is highly influenced by device junction
temperature and load current.
TEST CIRCUITS AND TEST SET-UP TABLES
V
V
OUT
IN
5
4
C
C
OUT
4.7 µF
(ALUMINUM,
IN
0.01 µF
(CERAMIC)
SA57001-XX
1.8 V
to
12 V
ELECTROLYTIC)
NOISE
1
3
ON/OFF
C
N
2
GND
0.01 µF
SL01420
Figure 23. Test circuit 1.
11
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
PACKING METHOD
The SA57001-XX is packed in reels, as shown in Figure 24.
GUARD
BAND
TAPE
TAPE DETAIL
REEL
ASSEMBLY
COVER TAPE
CARRIER TAPE
BARCODE
LABEL
BOX
SL01305
Figure 24. Tape and reel packing method
12
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
Plastic small outline package; 5 leads; body width 1.6 mm
SOP003
13
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
REVISION HISTORY
Rev
Date
Description
_3
20031016
Product data (9397 750 11881); ECN 853-2274 30176 of 01 August 2003.
Supersedes data of 2003 Mar 20 (9397 750 11127).
Modifications:
• Add ‘Marking code’ table to Ordering Information section on page 3.
• Change package outline to SOP003.
_2
_1
20030320
20010801
Product data (9397 750 11127); ECN 853-2274 29154 of 06 November 2002.
Supersedes data of 2001 Aug 01 (9397 750 08717).
Product data (9397 750 08717); ECN 853-2274 26807 of 01 August 2001.
14
2003 Oct 16
Philips Semiconductors
Product data
Microminiature, low power consumption,
low dropout regulator
SA57001-XX
Data sheet status
Product
status
Definitions
[1]
Level
Data sheet status
[2] [3]
I
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limitingvaluesdefinition— Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described
or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated
viaaCustomerProduct/ProcessChangeNotification(CPCN).PhilipsSemiconductorsassumesnoresponsibilityorliabilityfortheuseofanyoftheseproducts,conveys
nolicenseortitleunderanypatent, copyright, ormaskworkrighttotheseproducts, andmakesnorepresentationsorwarrantiesthattheseproductsarefreefrompatent,
copyright, or mask work right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2003
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 10-03
9397 750 11881
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
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