SA606DK [NXP]
Low-voltage high performance mixer FM IF system; 低电压高性能混频器FM IF系统
| 型号： | SA606DK |
| 厂家： | 
NXP |
| 描述： | Low-voltage high performance mixer FM IF system |
| 文件： | 总19页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF COMMUNICATIONS PRODUCTS
20
19
18
17
16
15
14
13
12
11
IF
LIMITER
AMP
RSSI
MIXER
QUAD
OSCILLATOR
–
+
+
–
V
REG
AUDIO
E
B
1
2
3
4
5
6
7
8
9
10
SA606
Low-voltage high performance mixer FM
IF system
Product Specification
Replaces data of October 26, 1993
1997 Nov 07
RF Data Handbook
Philip s Se m ic ond uc tors
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
DESCRIPTION
PIN CONFIGURATION
The SA606 is a low-voltage high performance monolithic FM IF
system incorporating a mixer/oscillator, two limiting intermediate
frequency amplifiers, quadrature detector, logarithmic received
signal strength indicator (RSSI), voltage regulator and audio and
RSSI op amps. The SA606 is available in 20-lead SOL
(surface-mounted small outline large package) and 20-lead SSOP
(shrink small outline package).
D and DK Packages
RF IN+
MIXER OUT
1
2
20
19
IF AMP DECOUPLING
RF IN- DECOUPLING
OSC
OUT
3
18 IF AMP IN
IF AMP DECOUPLING
OSC
IN
4
17
16
15
14
13
12
11
The SA606 was designed for portable communication applications
and will function down to 2.7V. The RF section is similar to the
famous SA605. The audio and RSSI outputs have amplifiers with
access to the feedback path. This enables the designer to level
adjust the outputs or add filtering.
IF AMP OUT
RSSI
5
GND
6
V
CC
AUDIO FEEDBACK
AUDIO
LIMITER IN
7
LIMITER DECOUPLING
LIMITER DECOUPLING
LIMITER OUT
8
RSSI FEEDBACK
9
FEATURES
10
QUADRATURE IN
• Low power consumption: 3.5mA typical at 3V
• Mixer input to >150MHz
SR00347
Figure 1. Pin Configuration
• Mixer conversion power gain of 17dB at 45MHz
• ESD protection: Human Body Model 2kV
• XTAL oscillator effective to 150MHz (L.C. oscillator or external
Robot Model 200V
oscillator can be used at higher frequencies)
• 102dB of IF Amp/Limiter gain
APPLICATIONS
• Portable cellular radio FM IF
• 2MHz limiter small signal bandwidth
• Temperature compensated logarithmic Received Signal Strength
• Cordless phones
Indicator (RSSI) with a 90dB dynamic range
• Wireless systems
• Low external component count; suitable for crystal/ceramic/LC
filters
• RF level meter
• Excellent sensitivity: 0.31µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 45MHz and IF at 455kHz
• Spectrum analyzer
• Instrumentation
• FSK and ASK data receivers
• Log amps
• SA606 meets cellular radio specifications
• Audio output internal op amp
• Portable high performance communication receiver
• Single conversion VHF receivers
• RSSI output internal op amp
• Internal op amps with rail-to-rail outputs
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
-40 to +85°C
ORDER CODE
SA606D
DWG #
20-Pin Plastic Small Outline Large (SOL) package (Surface-mount)
20-Pin Plastic Shrink Small Outline Package (SSOP) (Surface-mount)
SOT163-1
SOT266-1
-40 to +85°C
SA606DK
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
V
CC
Single supply voltage
7
T
Storage temperature range
-65 to +150
-40 to +85
°C
STG
T
Operating ambient temperature range
Thermal impedance D package
DK package
°C
A
90
117
θ
°C/W
JA
2
1997 Nov 07
853-1576 18665
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
RSSI
MIXER
QUAD
OSCILLATOR
–
+
+
–
V
REG
AUDIO
E
B
1
2
3
4
5
6
7
8
9
10
SR00348
Figure 2. Block Diagram
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T = 25°C; unless otherwise stated.
A
LIMITS
TYP
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
2.7
V
CC
Power supply voltage range
DC current drain
7.0
4.2
V
I
3.5
mA
CC
AC ELECTRICAL CHARACTERISTICS
T
A
= 25°C; V = +3V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 2.4kΩ
CC
and R18 = 3.3kΩ; RF level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with de-emphasis filter and C-message
weighted filter. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of
the listed parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MIN
TYP
MAX
Mixer/Osc section (ext LO = 220mV
)
RMS
f
Input signal frequency
150
150
6.2
MHz
MHz
dB
IN
f
Crystal oscillator frequency
Noise figure at 45MHz
OSC
Third-order input intercept point (50Ω
source)
f1 = 45.0; f2 = 45.06MHz
-9
dBm
Input RF level = -52dBm
Matched 14.5dBV step-up
50Ω source
Conversion voltage gain
13.5
1.25
17
+2.5
8
19.5
4.0
dB
dB
kΩ
pF
kΩ
RF input resistance
RF input capacitance
Mixer output resistance
Single-ended input
3.0
1.5
(Pin 20)
IF section
IF amp gain
Limiter gain
50Ω source
44
58
dB
dB
50Ω source
Input limiting -3dB, R
AM rejection
= 2.4k, R
= 3.3k
Test at Pin 18
-109
45
dBm
dB
17a
17b
80% AM 1kHz
Gain of two (2kΩ AC load)
IF level -110dBm
Audio level
70
120
17
160
mV
dB
SINAD sensitivity
3
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
AC ELECTRICAL CHARACTERISTICS (Continued)
LIMITS
TYP
-50
SYMBOL
PARAMETER
TEST CONDITIONS
UNITS
MAX
MIN
THD
S/N
Total harmonic distortion
Signal-to-noise ratio
-35
dB
dB
No modulation for noise
62
RF RSSI output, R = 2kΩ
RF level = -118dBm
RF level = -68dBm
RF level = -23dBm
0.3
.80
V
9
.70
1.1
1.80
2.50
V
1.20
1.8
V
RSSI range
90
dB
dB
kΩ
kΩ
kΩ
kΩ
RSSI accuracy
+1.5
1.5
IF input impedance
IF output impedance
Limiter input impedance
Limiter output impedance
Limiter output voltage
Pin 18
Pin 16
Pin 14
Pin 11
Pin 11
1.3
1.3
0.3
1.5
0.3
130
mV
RMS
RF/IF section (int LO)
Audio level
3V = V , RF level = -27dBm
120
2.2
12
mV
CC
RMS
System RSSI output
System SINAD sensitivity
3V = V , RF level = -27dBm
V
CC
RF level = -117dBm
dB
12dB(v) insertion loss, a fixed or variable resistor or an L pad for
simultaneous loss and impedance matching can be added between
the first IF output (Pin 16) and the interstage network. The overall
gain will then be 90dB with 2MHz bandwidth.
CIRCUIT DESCRIPTION
The SA606 is an IF signal processing system suitable for second IF
systems with input frequency as high as 150MHz. The bandwidth of
the IF amplifier and limiter is at least 2MHz with 90dB of gain. The
gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ source
applications. The overall system is well-suited to battery operation
as well as high performance and high quality products of all types.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 6.2dB, conversion gain of
17dB, and input third-order intercept of -9dBm. The oscillator will
operate in excess of 200MHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The demodulated output of the quadrature drives an internal op
amp. This op amp can be configured as a unity gain buffer, or for
simultaneous gain, filtering, and 2nd-order temperature
compensation if needed. It can drive an AC load as low as 5kΩ with
a rail-to-rail output.
The output impedance of the mixer is a 1.5kΩ resistor permitting
direct connection to a 455kHz ceramic filter. The input resistance of
the limiting IF amplifiers is also 1.5kΩ. With most 455kHz ceramic
filters and many crystal filters, no impedance matching network is
necessary. The IF amplifier has 43dB of gain and 5.5MHz
bandwidth. The IF limiter has 60dB of gain and 4.5MHz bandwidth.
To achieve optimum linearity of the log signal strength indicator,
there must be a 12dB(v) insertion loss between the first and second
IF stages. If the IF filter or interstage network does not cause
A log signal strength completes the circuitry. The output range is
greater than 90dB and is temperature compensated. This log signal
strength indicator exceeds the criteria for AMPs or TACs cellular
telephone. This signal drives an internal op amp. The op amp is
capable of rail-to-rail output. It can be used for gain, filtering, or
2nd-order temperature compensation of the RSSI, if needed.
NOTE: dB(v) = 20log V
/V
OUT IN
4
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
-25dB,
-10dB,
-29dB,
929/50Ω PAD
-10.6dB,
50/50Ω PAD
-36dB,
156k/50Ω PAD
1500/50Ω PAD 50/50Ω PAD
C26
51.5
96.5
51.7
96.5
32.6
50.5
R18
3.3k
71.5
32.8
2430
C24
71.5
C22
1.3k
3880
C20
R17
2.4k
C15
C19
C16
SW9
FLT1 SW8
C23
SW7
SW6
FLT2
SW5
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
MIXER
RSSI
QUAD
OSCILLATOR
+
+
–
–
V
REG
AUDIO
1
2
3
4
5
6
7
8
9
10
R13
R11
SW10
SW11
R14
R9
SW1
L1
SW3
SW4
C8
C1
C2
R10
C27
C9
C12
C7
R12
R19
16k
C5
C6
C10
R4
51.1
DEEMPHASIS
FILTER
IFT1
L2
SW2
X1
R1
C4
C3
R2
EXT.
LOC
R7
30.5
”C” WEIGHTED
AUDIO
OSC
R3
45MHZ
MEASUREMENT
CIRCUIT
C14
44.545
R8
39.2
R6
178
45.06
MHZ
AUDIO
RSSI
V
CC
MINI–CIRCUIT ZSC2–1B
Automatic Test Circuit Component List
C27
C1 100pF NPO Ceramic
C2 390pF NPO Ceramic
C5
C6 22pF NPO Ceramic
C7 1nF Ceramic
2.2µF +10% Monolithic Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
IFT 1 455kHz (Ce = 180pF) Toko RMC–2A6597H
L1 147–160nH Coilcraft UNI–10/142–04J08S
100nF +10% Monolithic Ceramic
C8 10.0pF NPO Ceramic
L2
0.8µH nominal
Toko 292CNS–T1038Z
X1 44.545MHz Crystal ICM4712701
C9
100nF +10% Monolithic Ceramic
C10
C12
C14
10µF Tantalum (minimum) *
2.2µF
100nF +10% Monolithic Ceramic
R9
R10
R11
2kΩ +1% 1/4W Metal Film
10kΩ +1%
10kΩ +1%
C15 10pF NPO Ceramic
C17
R12
R13
R14
R17
R18
R19
100nF +10% Monolithic Ceramic
2kΩ +1%
20kΩ +1%
10kΩ +1%
2.4kΩ +5% 1/4W Carbon Composition
3.3kΩ
16kΩ
C18
C21
C23
C25
C26
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
*NOTE: This value can be reduced when a battery is the power source.
SR00349
Figure 3. SA606 45MHz Test Circuit (Relays as shown)
5
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
C26
R18
3.3k
R17
2.4k
C15
FLT1
C23
FLT2
C18
C21
C17
20
19
18
17
16
15
14
13
12
11
IF
AMP
LIMITER
MIXER
RSSI
QUAD
OSCILLATOR
+ –
– +
V
REG
1
2
3
4
5
6
7
8
9
10
R11
10k
C1
C2
C9
C12
C8
R10
10k
L1
C27
C7
2.2µF
C10
C5
R19
11k
IFT1
L2
45MHz
INPUT
X1
C6
C19
390pF
C14
RSSI
OUTPUT
AUDIO
V
CC
NE606D/DK Demo Board
Application Component List
C1 51pF NPO Ceramic
C2 220pF NPO Ceramic
C23
C26
C27
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
2.2µF Tantalum
C5
100nF +10% Monolithic Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
C6 5-30pF trim cap
C7 1nF Ceramic
IFT 1
L1
L2
330µH TOKO 303LN-1130
.33µH TOKO SCB-1320Z
1.2µH
C8 10.0pF NPO Ceramic
C9
100nF +10% Monolithic Ceramic
C10
C12
C14
10µF Tantalum (minimum) *
2.2µF +10% Tantalum
100nF +10% Monolithic Ceramic
X1 44.545MHz Crystal ICM4712701
R5 Not Used in Application Board (see Note 8, pg 8)
R10
R11
R17
R18
R19
C15 10pF NPO Ceramic
8.2k +5% 1/4W Carbon Composition
10k +5% 1/4W Carbon Composition
2.4k +5% 1/4W Carbon Composition
3.3k +5% 1/4W Carbon Composition
11k +5% 1/4W Carbon Composition
C17
C18
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
C19
C21
390pF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
* NOTE: This value can be reduced when a battery is the power source.
SR00350
Figure 4. SA606 45MHz Application Circuit
6
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
RF GENERATOR
NE606 DEMO BOARD
45MHz
RSSI AUDIO
V
(+3)
CC
DE-EMPHASIS
FILTER
DC VOLTMETER
C–MESSAGE
HP339A DISTORTION
ANALYZER
SCOPE
SR00351
Figure 5. SA606 Application Circuit Test Set Up
NOTES:
1. C-message: The C-message and de-emphasis filter combination has a peak gain of 10 for accurate measurements. Without the gain, the
measurements may be affected by the noise of the scope and HP339 analyzer. The de-emphasis filter has a fixed -6dB/Octave slope
between 300Hz and 3kHz.
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or
8kHz if you use 30kHz filters.
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.35µV or -116dBm at the RF input.
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in
production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 10kΩ.
7
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
mA
6
V
= 7V
CC
5
4
3
2
V
= 5V
CC
V
= 3V
CC
V
= 2.7V
CC
°C
–55
–35
–15
5
25
45
65
85
105
125
SR00352
Figure 6. I vs Temperature
CC
–8.0
–8.5
–9.0
2.7V
3V
–9.5
–10.0
–10.5
–11.0
–11.5
–12.0
–12.5
–13.0
–13.5
–14.0
7V
–40
–30
–20
–10
0
10
20
30
40
50
60
70
80
Temperature (°C)
SR00353
Figure 7. Third Order Intercept Point vs Supply Voltage
8
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
8.00
7.75
7.50
7.25
7.00
6.75
7.0V
6.50
3V
6.25
6.00
5.75
5.50
5.25
5.00
2.7V
–40
–30
–20
–10
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
SR00354
Figure 8. Mixer Noise Figure vs Supply Voltage
18.00
17.75
17.50
17.25
17.00
16.75
16.50
16.25
16.00
2.7V
3V
7.0V
–40
–30
–20
–10
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
SR00355
Figure 9. Conversion Gain vs Supply Voltage
9
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
20
10
0
RF = 45MHz
IF = 455kHz
–10
–20
–30
3rd ORDER PRODUCT
FUND PRODUCT
–40
–50
–60
–70
–80
*50Ω INPUT
–66
–56
–46
–36
–26
–16
–6
4
14
24
34
RF* INPUT LEVEL (dBm)
SR00356
Figure 10. Mixer Third Order Intercept and Compression
10
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
5
AUDIO
0
–5
–10
V
= 3V
CC
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
RF = 45MHz
DEVIATION = ±8kHz
AUDIO LEVEL = 104.9mV
RMS
AM REJECTION
THD + NOISE
NOISE
–125
–115
–105
–95
–85
–75
–65
–55
–45
–35
–25
RF LEVEL (dBm)
SR00357
Figure 11. Sensitivity vs RF Level (-40°C)
5
0
AUDIO
–5
–10
V
= 3V
CC
RF = 45MHz
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
DEVIATION = ±8kHz
AUDIO LEVEL = 117.6mV
RMS
AM REJECTION
THD + NOISE
NOISE
–125
–115
–105
–95
–85
–75
RF LEVEL (dBm)
–65
–55
–45
–35
–25
SR00358
Figure 12. Sensitivity vs RF Level (+25°C)
11
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
5
AUDIO
0
–5
–10
V
= 3V
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
CC
RF = 45MHz
DEVIATION = ±8kHz
AUDIO LEVEL = 127mV
RMS
AM REJECTION
THD + NOISE
NOISE
–125
–115
–105
–95
–85
–75
RF LEVEL (dBm)
–65
–55
–45
–35
–25
SR00359
Figure 13. Sensitivity vs RF Level (Temperature 85°C)
5
AUDIO
0
–5
–10
–15
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
V
= 3V
CC
RF = 45MHz
RF LEVEL = -45dBm
DEVIATION = ±8kHz
AUDIO LEVEL = +117.6mV
RMS
DISTORTION
AM REJECTION
NOISE
–55
–35
–15
5
25
45
65
85
105
125
TEMPERATURE (°C)
SR00360
Figure 14. Relative Audio Level, Distortion, AM Rejection and Noise vs Temperature
12
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
2.400
2.000
1.600
1.200
0.800
0.400
0.000
+85°C
ROOM
-40°C
–95
–85
–75
–65
–55
–45
–35
–25
–15
–5
5
IF LEVEL (dBm)
SR00361
Figure 15. RSSI (455kHz IF @ 3V)
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
+85°C
+27°C
-40°C
–125
–115
–105
–95
–85
–75
–65
–55
–45
–35
–25
RF LEVEL (dBm)
SR00362
Figure 16. RSSI vs RF Level and Temperature - V = 3V
CC
13
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
V
300
V
= 7V
CC
250
200
150
100
50
V
V
= 5V
= 3V
CC
CC
V
= 2.7V
CC
°C
0
–55
–35
–15
5
25
45
65
85
105
125
SR00363
Figure 17. Audio Output vs Temperature
14
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
*Applies to Stand-Alone
data sheets only.
KTDN9/91
NE606
SR00365
Figure 18. SA606D SOL Product Board Layout (2X Actual Size* — For Reference Use Only)
15
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA606
606 Silk Screen
606 TOP
606 BOTTOM
NOTE;
All views are TOP VIEW and
not actual size. For reference only.
SR00366
Figure 19.
16
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high-performance mixer FM IF system
SA606
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
17
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high-performance mixer FM IF system
SA606
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
18
1997 Nov 07
Philips Semiconductors
Product specification
Low-voltage high-performance mixer FM IF system
SA606
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Philips
Semiconductors
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