SA614AHRX [NXP]
SA614A - Low power FM IF system QFN 16-Pin;型号: | SA614AHRX |
厂家: | NXP |
描述: | SA614A - Low power FM IF system QFN 16-Pin 商用集成电路 |
文件: | 总28页 (文件大小:1376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SA614A
Low power FM IF system
Rev. 4 — 14 February 2014
Product data sheet
1. General description
The SA614A is an improved monolithic low-power FM IF system. It incorporates two
limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic
received signal strength indicator, and voltage regulator. The SA614A features higher IF
bandwidth (25 MHz) and temperature compensated RSSI and limiters permitting higher
performance application compared with the SA604. The SA614A is available in a SO
(surface-mounted miniature) package.
2. Features and benefits
Low power consumption: 3.3 mA typical
Temperature compensated logarithmic RSSI with a 90 dB dynamic range
Two audio outputs - muted and unmuted
Low external component count; suitable for crystal/ceramic filters
Excellent sensitivity: 1.5 V across inputs pins (0.22 V into 50 matching network)
for 12 dB SINAD (SIgnal-to-Noise-And-Distortion ratio) for 1 kHz tone with RF at
45 MHz and IF at 455 kHz
SA614A meets cellular radio specifications
3. Applications
Cellular radio FM IF
High performance communication receiver
Intermediate frequency amplification and detection up to 25 MHz
RF level meter
Spectrum analyzer
Instrumentation
FSK and ASK data receivers
4. Ordering information
Table 1.
Ordering information
Tamb = 40 C to +85 C
Type number
Package
Name
Description
Version
SA614AD
SO16
plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
SOT1039-2
SA614AHR
HXQFN16
plastic thermal enhanced extremely thin quad flat package; no leads;
16 terminals; body 3 3 0.5 mm
SA614A
NXP Semiconductors
Low power FM IF system
5. Block diagram
GND
16 (13) 15 (12) 14 (11) 13 (10) 12 (9)
11 (8)
10 (7)
9 (6)
LIMITER
IF
AMP
QUAD
DET
SIGNAL
STRENGTH
VOLTAGE
MUTE
6 (3)
REGULATOR
1 (14)
2 (15)
GND
3 (16)
4 (1)
5 (2)
7 (4)
8 (5)
V
CC
aaa-009746
Pin numbers for SO16; HXQFN16 pins shown in parentheses.
Fig 1. Block diagram of SA614A
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
2 of 28
SA614A
NXP Semiconductors
Low power FM IF system
6. Pinning information
6.1 Pinning
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IF_AMP_DECOUPL
GND
IF_AMP_INPUT
IF_AMP_DECOUPL
IF_AMP_OUTPUT
GND
MUTE_INPUT
V
CC
SA614A
RSSI_OUTPUT
MUTE_AUD_OUTP
LIMITER_INPUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_OUTPUT
UNMUTE_AUD_OUTP
QUADRATURE_INPUT
aaa-009743
Fig 2. Pin configuration for SO16
terminal 1
index area
1
2
3
4
12
11
10
9
V
IF_AMP_DECOUPL
IF_AMP_OUTPUT
GND
CC
RRSI_OUTP
MUTE_AUD_OUTP
SA614A
(1)
UNMUTE_AUD_OUTP
LIMITER_INPUT
aaa-009745
Transparent top view
(1) Die Attach Paddle (DAP).
Fig 3. Pin configuration for HXQFN16
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
3 of 28
SA614A
NXP Semiconductors
Low power FM IF system
6.2 Pin description
Table 2.
Symbol
Pin description
Pin
SO16
1
Description
HXQFN16
IF_AMP_DECOUPL
GND
14
15
16
1
IF amplifier decoupling
ground
2
MUTE_INPUT
VCC
3
mute input
4
supply voltage
RSSI_OUTPUT
MUTE_AUD_OUTP
UNMUTE_AUD_OUTP
QUADRATURE_INPUT
LIMITER_OUTPUT
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_INPUT
GND
5
2
RSSI output
6
3
mute audio output
unmute audio output
quadrature input
limiter output
7
4
8
5
9
6
10
11
12
13
14
15
16
-
7
limiter decoupling
limiter decoupling
limiter input
8
9
10[1]
11
12
13
DAP
ground
IF_AMP_OUTPUT
IF_AMP_DECOUPL
IF_AMP_INPUT
-
IF amplifier output
IF amplifier decoupling
IF amplifier input
exposed Die Attach Paddle
[1] HXQFN16 package supply ground is connected to both GND pin and exposed center pad. GND pin must
be connected to supply ground for proper device operation. For enhanced thermal, electrical, and board
level performance, the exposed pad must be soldered to the board using a corresponding thermal pad on
the board. For proper heat conduction through the board, thermal vias must be incorporated in the PCB in
the thermal pad region.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
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GND
16
15
14
13
12
11
10
9
42 kΩ
42 kΩ
700 Ω
7 kΩ
1.6
kΩ
1.6
kΩ
700 Ω
40 kΩ
40 kΩ
35 kΩ
2 kΩ
4.5 kΩ
2 kΩ
8 kΩ
FULL WAVE
RECT.
FULL WAVE
RECT.
VOLTAGE/
CURRENT CONVERTER
V
MUTE
EE
VOLT
REG
VOLT
REG
QUAD
DET
V
CC
BAND
GAP VOLT
40 kΩ
40 kΩ
V
CC
80 kΩ
55 kΩ
55 kΩ
80 kΩ
80 kΩ
1
2
3
4
5
6
7
8
V
aaa-009760
GND
CC
Fig 4. Equivalent circuit
SA614A
NXP Semiconductors
Low power FM IF system
8. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
Parameter
Conditions
Min
-
Max
9
Unit
V
supply voltage
Tstg
storage temperature
ambient temperature
65
40
+150
+85
C
C
Tamb
operating
9. Thermal characteristics
Table 4.
Symbol
Zth(j-a)
Thermal characteristics
Parameter
Conditions
SA614AD (SO16)
SA614AHR (HXQFN16)
Max
Unit
K/W
K/W
transient thermal impedance
from junction to ambient
90
75
10. Static characteristics
Table 5.
Static characteristics
VCC = 3 V; Tamb = 25 C; unless specified otherwise.
Symbol
ICC
Parameter
Conditions
Min
2.5
4.5
1.7
-
Typ
Max
4.0
8.0
-
Unit
mA
V
supply current
supply voltage
threshold voltage
3.3
VCC
-
-
-
Vth
mute switch-on
mute switch-off
V
1.0
V
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
6 of 28
SA614A
NXP Semiconductors
Low power FM IF system
11. Dynamic characteristics
Table 6.
Dynamic characteristics
Tamb = 25 C; VCC = 6 V; unless specified otherwise. IF frequency = 455 kHz; IF level = 47 dBm; FM modulation = 1 kHz
with 8 kHz peak deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 14. The
parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits
do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improves many of the listed
parameters.
Symbol
Parameter
Conditions
Min
-
Typ
92
33
Max Unit
input limiting 3 dB
AM rejection
test at pin IF_AMP_INPUT: per 50
80 % AM 1 kHz
-
dBm
dB
25
60
-
-
recovered audio level
15 nF de-emphasis
150 pF de-emphasis
175
530
42
68
260
mVRMS
mVRMS
dB
-
THD
S/N
total harmonic distortion
signal-to-noise ratio
RSSI output
30
-
-
no modulation for noise
RF level = 118 dBm
RF level = 68 dBm
RF level = 18 dBm
R4 = 100 k (pin RSSI_OUTPUT)
R4 = 100 k (pin RSSI_OUTPUT)
IF
-
dB
[1]
[1]
[1]
0
160
800
mV
V
1.7
3.6
-
2.50 3.3
4.80 5.8
V
RSSI range
80
-
-
-
-
-
-
-
dB
RSSI accuracy
-
2.0
1.6
dB
Zi
input impedance
output impedance
limiter input impedance
output resistance
1.4
k
Zo
Z
IF
0.85 1.0
k
1.4
-
1.6
58
58
k
Ro
unmuted audio
muted audio
k
k
[1] SA614A data sheets refer to power at 50 input termination; about 21 dB less power actually enters the internal 1.5 k input.
SA614A (50 ) - SA614A (1.5 k)/SA615 (1.5 k)
97 dBm - 118 dBm
47 dBm - 68 dBm
+3 dBm - 18 dBm
The SA615 and SA614A are both derived from the same basic die. The SA615 performance plots are directly applicable to the SA614A.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
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SA614A
NXP Semiconductors
Low power FM IF system
12. Performance curves
aaa-009768
200
Φ
(1)
(2)
(3)
(4)
(5)
(6)
150
100
50
0
0.95
0.975
1.0
1.025
1.05
(1) Q =10
(2) Q =20
(3) Q =40
(4) Q =60
(5) Q =80
(6) Q =100
Fig 5. Phase as a function of normalized IF frequency
1
1
------
-------
Normalized IF frequency:
= 1 +
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
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SA614A
NXP Semiconductors
Low power FM IF system
13. Application information
455 kHz
0.1 μF
ceramic filter
LO input
44.545 MHz
0.1 μF
51 Ω
0.1 μF
0.1 μF
455 kHz
ceramic
filter
5.5 μH
+6 V
1 pF
180
pF
680
μH
10 μF
0.1 μF
10 nF
0.1 μF
0.1
μF
SA614A
SA602A
47 pF
150 pF
0.1 μF
0.28
μH
RF input
45 MHz
15 nF
220 pF
1
nF
91
kΩ
0.1 μF
aaa-009761
MUTE
RSSI AUDIO
DATA
+6 V
Fig 6. Typical application cellular radio (45 MHz RF input and 455 kHz IF)
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
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SA614A
NXP Semiconductors
Low power FM IF system
SA614A IF INPUT (μV) (1500 ꢀ)
10
100
1 k
10 k
100 k
AUDIO
0
RSSI
(V)
THD + NOISE
AM (80 % MOD)
NOISE
4
3
2
1
RSSI (VOLTS)
(dB)
-20
THD + NOISE
-40
-60
-80
AM (80 % MOD)
NOISE
-40
-120
-100
-80
-60
-20
SA602A RF INPUT (dBm) (50 ꢀ)
aaa-009988
Fig 7. Performance of the typical cellular radio application
Audio out:
• C message weighted
• 0 dB reference = recovered audio for 8 kHz peak deviation (dB)
13.1 Circuit description
The SA614A is a very high gain, high frequency device. Correct operation is not possible
if good RF layout and gain stage practices are not used. The SA614A cannot be
evaluated independent of circuit, components, and board layout. A physical layout which
correlates to the electrical limits is shown in Figure 17. This configuration can be used as
the basis for production layout.
The SA614A is an IF signal processing system suitable for IF frequencies as high as
21.4 MHz. The device consists of two limiting amplifiers, quadrature detector, direct audio
output, muted audio output, and signal strength indicator (with log output characteristic).
The equivalent circuit is shown in Figure 4.
Figure 7 is the performance of the typical cellular radio application shown in Figure 6 with
45 MHz RF input and 455 kHz IF.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
10 of 28
SA614A
NXP Semiconductors
Low power FM IF system
13.2 IF amplifiers
The IF amplifier section consists of two log-limiting stages. The first consists of two
differential amplifiers with 39 dB of gain and a small signal bandwidth of 41 MHz (when
driven from a 50 source). The output of the first limiter is a low impedance emitter
follower with 1 k of equivalent series resistance. The second limiting stage consists of
three differential amplifiers with a gain of 62 dB and a small signal AC bandwidth of
28 MHz. The outputs of the final differential stage are buffered to the internal quadrature
detector. One of the outputs is available at pin LIMITER_OUTPUT to drive an external
quadrature capacitor and L/C quadrature tank.
Both of the limiting amplifier stages are DC biased using feedback. The buffered output of
the final differential amplifier is fed back to the input through 42 kresistors. As shown in
Figure 4, the input impedance is established for each stage by tapping one of the
feedback resistors 1.6 k from the input. It requires one additional decoupling capacitor
from the tap point to ground.
9
V+
42 kꢀ
42 kΩ
V+
40 kꢀ
11
12
15
16
700 Ω
8
14
1.6 kΩ
40 kΩ
40 kꢀ
10
7 kΩ
1
80 kꢀ
aaa-009978
aaa-009762
Fig 8. First limiter bias
Fig 9. Second limiter and quadrature detector
BPF
BPF
aaa-009763
Fig 10. Feedback paths
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
11 of 28
SA614A
NXP Semiconductors
Low power FM IF system
BPF
high impedance
BPF
high impedance
low impedance
aaa-009764
a. Terminating HIGH impedance filters with transformation to LOW impedance
BPF
BPF
A
resistive loss into BPF
aaa-009765
b. LOW impedance termination and gain reduction
Fig 11. Practical termination
430 Ω
16
15
14
13
12
11
10
9
8
430 Ω
SA614A
1
2
3
4
5
6
7
aaa-009766
Fig 12. Crystal input filter with ceramic interstage filter
Because of the very high gain, bandwidth and input impedance of the limiters, there is a
very real potential for instability at IF frequencies above 455 kHz. The basic phenomenon
is shown in Figure 10. Distributed feedback (capacitance, inductance and radiated fields)
forms a divider from the output of the limiters back to the inputs (including RF input). If this
feedback divider does not cause attenuation greater than the gain of the forward path,
then oscillation or low-level regeneration is likely. If regeneration occurs, two symptoms
may be present:
1. The RSSI output is high with no signal input (should nominally be 250 mV or lower)
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
12 of 28
SA614A
NXP Semiconductors
Low power FM IF system
2. The demodulated output demonstrates a threshold. Above a certain input level, the
limited signal begins to dominate the regeneration, and the demodulator begins to
operate in a normal manner.
There are three primary ways to deal with regeneration:
1. Minimize the feedback by gain stage isolation.
2. Lower the stage input impedances, thus increasing the feedback attenuation factor.
3. Reduce the gain. Gain reduction can effectively be accomplished by adding
attenuation between stages which can also lower the input impedance. Examples of
impedance/gain adjustment are shown in Figure 11. Reduced gain results in reduced
limiting sensitivity.
A feature of the SA614A IF amplifiers, which is not specified, is low phase shift. The
SA614A is fabricated with a 10 GHz process with very small collector capacitance. It is
advantageous in some applications that the phase shift changes only a few degrees over
a wide range of signal input amplitudes.
13.3 Stability considerations
The high gain and bandwidth of the SA614A in combination with its very low currents
permit circuit implementation with superior performance. However, stability must be
maintained and, to do that, every possible feedback mechanism must be addressed.
These mechanisms are:
1. supply lines and ground
2. stray layout inductances and capacitances,
3. radiated fields, and
4. phase shift
As the system IF increases, so must the attention to fields and strays. However, ground
and supply loops cannot be overlooked, especially at lower frequencies. Even at 455 kHz,
if the supply line is not decoupled, using the test layout in Figure 17, instability occurs. To
decouple, use two high-quality RF capacitors, a 0.1 F monolithic on the VCC pin, and a
6.8 F tantalum on the supply line. An electrolytic is not an adequate substitute. At
10.7 MHz, a 1 F tantalum has proven acceptable with this layout. Every layout must be
evaluated on its own merit, but do not underestimate the importance of good supply
bypass.
At 455 kHz, if the layout of Figure 17 or one substantially similar is used, ceramic filters
can be connected directly to the input and between limiter stages with no special
consideration. At frequencies above 2 MHz, some input impedance reduction is usually
necessary. Figure 11 demonstrates a practical means.
As illustrated in Figure 12, 430 external resistors are applied in parallel to the internal
1.6 k load resistors, thus presenting approximately 330 to the filters. The input filter is
a crystal type for narrowband selectivity. The filter is terminated with a tank which
transforms to 330 W. The interstage filter is a ceramic type which does not contribute to
system selectivity, but does suppress wideband noise and stray signal pickup. In
wideband 10.7 MHz IFs the input filter can also be ceramic, directly connected to pin
IF_AMP_INPUT.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
13 of 28
SA614A
NXP Semiconductors
Low power FM IF system
In some products, it may be impractical to utilize shielding, but this mechanism may be
appropriate to 10.7 MHz and 21.4 MHz IF. One of the benefits of low current is lower
radiated field strength, but lower does not mean non-existent. A spectrum analyzer with
an active probe clearly shows IF energy with the probe held in the proximity of the second
limiter output or quadrature coil. No specific recommendations are provided, but
mechanical shielding should be considered if layout, bypass, and input impedance
reduction do not solve a stubborn instability.
The final stability consideration is phase shift. The phase shift of the limiters is very low,
but there is phase shift contribution from the quadrature tank and the filters. Most filters
demonstrate a large phase shift across their passband (especially at the edges). If the
quadrature detector is tuned to the edge of the filter passband, the combined filter and
quadrature phase shift can aggravate stability. It is not usually a problem, but should be
kept in mind.
13.4 Quadrature detector
Figure 9 shows an equivalent circuit of the SA614A quadrature detector. It is a multiplier
cell similar to a mixer stage. Instead of mixing two different frequencies, it mixes two
signals of common frequency but different phase. Internal to the device, a constant
amplitude (limited) signal is differentially applied to the lower port of the multiplier. The
same signal is applied single-ended to an external capacitor at pin LIMITER_OUTPUT.
There is a 90° phase shift across the plates of this capacitor. The phase shifted signal
applied to the upper port of the multiplier is at pin QUADRATURE_INPUT. A quadrature tank
(parallel L/C network) permits frequency selective phase shifting at the IF frequency. This
quadrature tank must be returned to ground through a DC blocking capacitor.
The loaded Q of the quadrature tank impacts three fundamental aspects of the detector:
Distortion, maximum modulated peak deviation, and audio output amplitude. Typical
quadrature curves are illustrated in Figure 5. The phase angle translates to a shift in the
multiplier output voltage.
Thus a small deviation gives a large output with a high Q tank. However, as the deviation
from resonance increases, the non-linearity of the curve increases (distortion). With too
much deviation, the signal is outside the quadrature region (limiting the peak deviation
which can be demodulated). If the same peak deviation is applied to a lower Q tank, the
deviation remains in a region of the curve which is more linear (less distortion). However,
it creates a smaller phase angle (smaller output amplitude). Thus the Q of the quadrature
tank must be tailored to the design. Basic equations and an example for determining Q
are shown below. This explanation includes first-order effects only.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
14 of 28
SA614A
NXP Semiconductors
Low power FM IF system
13.5 Frequency discriminator design equations
V
out
aaa-009767
Fig 13. Frequency discriminator
CS
1
------------------- ----------------------------------------
VO
=
2 VIN
(1)
CP + CS
1
-----
S
1
1 +
+
---------
Q1S
1
where: 1 =
and Q1 = RCP + CS1
--------------------------------
LCP + CS
From Equation 1, the phase shift between nodes 1 and 2, or the phase across CS will be:
1
----------
Q1
= <VO – <VIN = tg–1
(2)
-----------------------
2
1
------
1 –
1
------
Figure 5 is the plot of as a function of
. It is notable that at = 1 , the phase shift
2Q1
2
--
is and the response is close to a straight line with a slope of
=
.
---------
-------
1
2Q1
2
---------
with respect to the VIN.
The signal VO would have a phase shift of
–
--
1
If VIN = A sin(t) =>
2Q1
2
---------
VO = Asin t +
–
(3)
(4)
(5)
--
1
Multiplying the two signals in the mixer, and low pass filtering yields:
2Q1
2
2
---------
VIN VO = A sint sin t +
–
--
1
After low pass filtering =>
2Q1
---------
1
2Q1
---------
1
1
2
2
1
2
2
--
--
VO
=
A cos
–
=
A sin
--
2
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
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SA614A
NXP Semiconductors
Low power FM IF system
1 +
--------------------
1
------
VO 2Q
= 2Q
(6)
1
11
2
------
--
For 2Q
<< which is discriminated FM output. Note that is the deviation
11
frequency from the carrier 1 1. Example: at 455 kHz IF, with 5 kHz FM deviation. The
maximum normalized frequency is (455 5)/455 kHz = 1.010 or 0.990.
Go to the frequency as a function of normalized frequency curves (Figure 12) and draw a
1
------
vertical straight line at
= 1.01.
The curves with Q = 100, Q = 40 are not linear, but Q = 20 and less shows better linearity
for this application. Too small Q decreases the amplitude of the discriminated FM signal.
Equation 6 => Choose a Q = 20.
The internal resistance of the SA614A is 40 k From Q1 = RCP + CS1 , and then
1
1 =
, it results that C + C = 174 pF and L = 0.7 mH.
P S
--------------------------------
LCP + CS
A more exact analysis including the source resistance of the previous stage shows a
series and a parallel resonance in the phase detector tank. To make the parallel and
series resonances close, and to get maximum attenuation of higher harmonics at
455 kHz IF, a CS = 10 pF and CP = 164 pF provided the best results. For commercial
purposes, values of 150 pF or 180 pF may be practical. A variable inductor which can be
adjusted around 0.7 mH should be chosen and optimized for minimum distortion. (For
10.7 MHz, a value of CS = 1 pF is recommended.)
13.6 Audio outputs
Two audio outputs are provided. Both are PNP current-to-voltage converters with 55 k
nominal internal loads. The unmuted output is always active to permit the use of signaling
tones in systems such as cellular radio. The other output can be muted with 70 dB typical
attenuation. The two outputs have an internal 180° phase difference.
The nominal frequency response of the audio outputs is 300 kHz. This response can be
increased with the addition of external resistors between the output pins and ground. The
resistors are placed in parallel with the internal 55 k resistors and they lower the output
time constant. The output structure is a current-to-voltage converter where current is
driven into the resistance, creating a voltage drop. By adding external parallel resistance,
it also lowers the output audio amplitude and DC level.
This technique of audio bandwidth expansion can be effective in many applications such
as SCA receivers and data transceivers. Because the two outputs have a 180° phase
relationship, FSK demodulation can be accomplished by applying the two output
differentially across the inputs of an op amp or comparator. Once the threshold of the
reference frequency (or no-signal condition) has been established, the two outputs shift in
opposite directions (higher or lower output voltage) as the input frequency shifts. The
1. Ref. Krauss, Raab, Bastian: Solid-State radio Eng.; Wiley, 1980, p.311.
SA614A
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© NXP B.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 14 February 2014
16 of 28
SA614A
NXP Semiconductors
Low power FM IF system
output of the comparator is logic output. The choice of op amp or comparator depends on
the data rate. With high IF frequency (10 MHz and above), and wide IF bandwidth (L/C
filters) data rates in excess of 4 Mbaud are possible.
13.7 RSSI
The Received Signal Strength Indicator (RSSI), of the SA614A demonstrates monotonic
logarithmic output over a range of 90 dB. The signal strength output is derived from the
summed stage currents in the limiting amplifiers. It is independent of the IF frequency.
Thus, unfiltered signals at the limiter inputs, spurious products, or regenerated signals
manifest themselves as RSSI outputs. An RSSI output of greater than 250 mV with no
signal (or a very small signal) applied, is an indication of possible regeneration or
oscillation.
In order to achieve optimum RSSI linearity, there must be a 12 dB insertion loss between
the first and second limiting amplifiers. With a typical 455 kHz ceramic filter, there is a
nominal 4 dB insertion loss in the filter. An additional 6 dB is lost in the interface between
the filter and the input of the second limiter. A small amount of additional loss must be
introduced with a typical ceramic filter. In the test circuit used for cellular radio applications
(Figure 5), the optimum linearity was achieved with a 5.1 k resistor. The resistor was
placed between the output of the first limiter (pin IF_AMP_OUTPUT) and the input of the
interstage filter. With this resistor from pin IF_AMP_OUTPUT to the filter, sensitivity of
0.25 V for 12 dB SINAD was achieved. With the 3.6 k resistor, sensitivity was
optimized at 0.22 V for 12 dB SINAD with minor change in the RSSI linearity.
Any application requiring optimized RSSI linearity, such as spectrum analyzers, cellular
radio, and certain types of telemetry, requires careful attention to limiter interstage
component selection. This is especially true with high IF frequencies which require
insertion loss or impedance reduction for stability.
At low frequencies, the RSSI makes an excellent logarithmic AC voltmeter.
For data applications, the RSSI is effective as an Amplitude Shift Keyed (ASK) data slicer.
If a comparator is applied to the RSSI and the threshold set slightly above the no signal
level, when an in-band signal is received the comparator is sliced. Unlike FSK
demodulation, the maximum data rate is limited. An internal capacitor limits the RSSI
frequency response to approximately 100 kHz. At high data rates, the rise and fall times
are not symmetrical.
The RSSI output is a current-to-voltage converter similar to the audio outputs. However,
an external resistor is required. With a 91 k resistor, the output characteristic is 0.5 V for
a 10 dB change in the input amplitude.
13.8 Additional circuitry
Internal to the SA614A are voltage and current regulators which have been temperature
compensated to maintain the performance of the device over a wide temperature range.
These regulators are not accessible to the user.
SA614A
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14. Test information
F
1
C
4
Q = 20 loaded
C
input
1
R
2
C
2
C
C
6
R
5
3
F
2
R
1
C
7
C
3
SA614A
C
8
S
1
R
4
C
9
C
10
C
12
C
11
DATA
AUDIO
output
output
RSSI
output
MUTE
input
aaa-009812
Fig 14. SA614A test circuit
Table 7.
SA616DK demo board component list
Component Value
Description
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
F1
100 nF, +80 %, 20 %,63 V
K10000-25V ceramic
100 nF, +10 %, 50 V
100 nF, 10 %, 50 V
100 nF, +10 %, 50 V
100 nF, 10 %, 50 V
10 pF, 2 %, 100 V
100 nF, 10 %, 50 V
100 nF, 10 %, 50 V
15 nF, 10 %, 50 V
150 pF 2 %, 100 V
1 nF, 10 %, 100 V
6.8 F 20 %, 25 V
455 kHz
-
-
-
-
NPO ceramic
-
-
-
N1500 ceramic
K2000-Y5P ceramic
tantalum
ceramic filter Murata SFG455A3
Toko RMC 2A6597H
metal film
F2
455 kHz, Ce = 180 pF
51 , 1 %, 1/4 W
1500 , 1 %, 1/4 W
1500 , 5 %, 1/8 W
100 k, 1 %, 1/4 W
R1
R2
R3
R4
metal film
carbon composition
metal film
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SA614A
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Low power FM IF system
SIGNETICS
SIGNETICS
NE614 TEST CKT
NE614 TEST CKT
MUTE
MUTE
aaa-009813
aaa-009814
Fig 15. Components layout (viewed from the top)
Fig 16. Bottom layout (viewed from the top)
SIGNETICS
NE614 TEST CKT
MUTE
aaa-009813
Fig 17. Print layout (viewed from the top)
SA614A
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SA614A
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Low power FM IF system
15. Package outline
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-19
SOT109-1
076E07
MS-012
Fig 18. Package outline SOT109-1 (SO16)
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SA614A
NXP Semiconductors
Low power FM IF system
HXQFN16: plastic thermal enhanced extremely thin quad flat package; no leads;
16 terminals; body 3 x 3 x 0.5 mm
SOT1039-2
D
B
A
terminal 1
index area
E
A
A
1
c
detail X
e
1
1/2 e
b
C
y
e
v
w
C A
B
C
y
C
1
5
8
L
4
1
9
e
E
e
2
h
1/2 e
12
X
terminal 1
index area
16
13
D
h
0
1
scale
2 mm
v
Dimensions
Unit
A
A
1
b
c
D
D
h
E
E
h
e
e
e
L
0.40
w
y
y
1
1
2
max 0.5 0.05 0.35
3.1 1.95 3.1 1.95
mm nom
min
0.30 0.127 3.0 1.85 3.0 1.85 0.5 1.5 1.5 0.35 0.1 0.05 0.05 0.1
0.00 0.25 2.9 1.75 2.9 1.75 0.30
sot1039-2_po
References
Outline
version
European
projection
Issue date
IEC
- - -
JEDEC
JEITA
- - -
10-07-29
11-03-30
SOT1039-2
Fig 19. Package outline SOT1039-2 (HXQFN16)
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Low power FM IF system
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
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Low power FM IF system
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 20) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 8 and 9
Table 8.
SnPb eutectic process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
350
220
< 2.5
235
220
2.5
220
Table 9.
Lead-free process (from J-STD-020D)
Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350
260
350 to 2000
> 2000
260
< 1.6
260
250
245
1.6 to 2.5
> 2.5
260
245
250
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 20.
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Low power FM IF system
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 20. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 10. Abbreviations
Acronym
AM
Description
Amplitude Modulation
ASK
FM
Amplitude Shift Keying
Frequency Modulation
FSK
IF
Frequency Shift Keying
Intermediate Frequency
Printed-Circuit Board
PCB
RF
Radio Frequency
RSSI
SINAD
Received Signal Strength Indicator
Signal-to-Noise And Distortion ratio
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18. Revision history
Table 11. Revision history
Document ID
SA614A v.4
Release date
Data sheet status
Change notice
Supersedes
20140214
Product data sheet
-
SA614A v.3
Modifications:
• The format of this document has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Added type number SA614AHR.
SA614A v.3
SA614A v.2
SA614A v.1
19971107
19971107
19941215
Product specification
Product specification
Product specification
-
-
-
SA614A v.2
SA614A v.1
-
SA614A
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Low power FM IF system
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
19.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
SA614A
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Product data sheet
Rev. 4 — 14 February 2014
26 of 28
SA614A
NXP Semiconductors
Low power FM IF system
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SA614A
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Product data sheet
Rev. 4 — 14 February 2014
27 of 28
SA614A
NXP Semiconductors
Low power FM IF system
21. Contents
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 1
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
7
Functional description . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Performance curves . . . . . . . . . . . . . . . . . . . . . 8
8
9
10
11
12
13
Application information. . . . . . . . . . . . . . . . . . . 9
Circuit description. . . . . . . . . . . . . . . . . . . . . . 10
IF amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Stability considerations . . . . . . . . . . . . . . . . . 13
Quadrature detector . . . . . . . . . . . . . . . . . . . . 14
Frequency discriminator design equations. . . 15
Audio outputs . . . . . . . . . . . . . . . . . . . . . . . . . 16
RSSI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Additional circuitry . . . . . . . . . . . . . . . . . . . . . 17
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
14
15
Test information. . . . . . . . . . . . . . . . . . . . . . . . 18
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 20
16
Soldering of SMD packages . . . . . . . . . . . . . . 22
Introduction to soldering . . . . . . . . . . . . . . . . . 22
Wave and reflow soldering . . . . . . . . . . . . . . . 22
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 22
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 23
16.1
16.2
16.3
16.4
17
18
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 24
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 25
19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 26
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 26
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 27
19.1
19.2
19.3
19.4
20
21
Contact information. . . . . . . . . . . . . . . . . . . . . 27
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 February 2014
Document identifier: SA614A
相关型号:
SI9130DB
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