SA615DK/01,112 [NXP]

SA615 - High performance low power mixer FM IF system SSOP2 20-Pin;
SA615DK/01,112
型号: SA615DK/01,112
厂家: NXP    NXP
描述:

SA615 - High performance low power mixer FM IF system SSOP2 20-Pin

光电二极管 商用集成电路
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SA615  
High performance low power mixer FM IF system  
Rev. 4 — 14 November 2014  
Product data sheet  
1. General description  
The SA615 is a high performance monolithic low-power FM IF system incorporating a  
mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,  
muting, logarithmic Received Signal Strength Indicator (RSSI), and voltage regulator. The  
SA615 combines the functions of NXP Semiconductors SA602A and SA604A, but  
features a higher mixer input intercept point, higher IF bandwidth (25 MHz) and  
temperature compensated RSSI and limiters permitting higher performance application.  
The SA615 is available in 20-lead SO (surface-mounted miniature package) and 20-lead  
SSOP (shrink small outline package).  
The SA605 and SA615 are functionally the same device types. The difference between  
the two devices lies in the guaranteed specifications. The SA615 has a higher ICC, lower  
input third-order intercept point, lower conversion mixer gain, lower limiter gain, lower AM  
rejection, lower SINAD, higher THD, and higher RSSI error than the SA615. Both the  
SA605 and SA615 devices meet the EIA specifications for AMPS and TACS cellular radio  
applications.  
2. Features and benefits  
Low power consumption: 5.7 mA typical at 6 V  
Mixer input to >500 MHz  
Mixer conversion power gain of 13 dB at 45 MHz  
Mixer noise figure of 4.6 dB at 45 MHz  
XTAL oscillator effective to 150 MHz (L/C oscillator to 1 GHz local oscillator can be  
injected)  
102 dB of IF amplifier/limiter gain  
25 MHz limiter small signal bandwidth  
Temperature-compensated logarithmic Received Signal Strength Indicator (RSSI) with  
a dynamic range in excess of 90 dB  
Two audio outputs — muted and unmuted  
Low external component count; suitable for crystal/ceramic/LC filters  
Excellent sensitivity: 0.22 V into 50 matching network for 12 dB SINAD  
(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at  
455 kHz  
SA615 meets cellular radio specifications  
ESD hardened  
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
3. Applications  
Cellular radio FM IF  
High performance communications receivers  
Single conversion VHF/UHF receivers  
SCA receivers  
RF level meter  
Spectrum analyzer  
Instrumentation  
FSK and ASK data receivers  
Log amps  
Wideband low current amplification  
4. Ordering information  
Table 1.  
Ordering information  
Type number  
Topside  
marking  
Package  
Name  
Description  
Version  
SA615D/01  
SA615D  
SO20  
plastic small outline package; 20 leads; body width 7.5 mm  
SOT163-1  
SA615DK/01  
SA615DK  
SSOP20  
plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1  
4.1 Ordering options  
Table 2.  
Ordering options  
Type number  
Orderable  
Package  
Packing method  
Minimum Temperature  
part number  
order  
quantity  
SA615D/01  
SA615D/01,112  
SA615D/01,118  
SA615DK/01,112  
SA615DK/01,118  
SO20  
Standard marking  
* IC’s tube - DSC bulk pack  
1520  
2000  
1350  
2500  
Tamb = 40 C to +85 C  
amb = 40 C to +85 C  
SO20  
Reel 13” Q1/T1  
*Standard mark SMD  
T
SA615DK/01  
SSOP20  
SSOP20  
Standard marking  
* IC’s tube - DSC bulk pack  
Tamb = 40 C to +85 C  
Tamb = 40 C to +85 C  
Reel 13” Q1/T1  
*Standard mark SMD  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
2 of 26  
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
5. Block diagram  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF amp  
limiter  
mixer  
RSSI  
quad  
10  
OSCILLATOR  
mute  
E
3
B
4
1
2
5
6
7
8
9
aaa-012909  
Fig 1. Block diagram  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
3 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
6. Pinning information  
6.1 Pinning  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
RF_IN  
RF_BYPASS  
OSC_OUT  
MIXER_OUT  
IF_AMP_DECOUPL  
IF_AMP_IN  
3
4
OSC_IN  
IF_AMP_DECOUPL  
IF_AMP_OUT  
GND  
5
MUTE_INPUT  
SA615D/01  
6
V
CC  
7
RSSI_OUT  
MUTE_AUD_OUTP  
UNMUTE_AUD_OUTP  
QUADRATURE_IN  
LIMITER_IN  
8
LIMITER_DECOUPL  
LIMITER_DECOUPL  
LIMITER_OUT  
9
10  
aaa-013002  
Fig 2. Pin configuration for SO20  
1
2
20  
MIXER_OUT  
RF_IN  
RF_BYPASS  
OSC_OUT  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF_AMP_DECOUPL  
IF_AMP_IN  
3
4
OSC_IN  
IF_AMP_DECOUPL  
IF_AMP_OUT  
GND  
5
MUTE_INPUT  
SA615DK/01  
6
V
CC  
7
RSSI_OUT  
MUTE_AUD_OUTP  
UNMUTE_AUD_OUTP  
QUADRATURE_IN  
LIMITER_IN  
8
LIMITER_DECOUPL  
LIMITER_DECOUPL  
LIMITER_OUT  
9
10  
aaa-013003  
Fig 3. Pin configuration for SSOP20  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
4 of 26  
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
6.2 Pin description  
Table 3.  
Symbol  
RF_IN  
Pin description  
Pin  
1
Description  
RF input  
RF_BYPASS  
2
RF bypass pin  
OSC_OUT  
3
oscillator output  
OSC_IN  
4
oscillator input  
MUTE_INPUT  
VCC  
5
mute input  
6
positive supply voltage  
RSSI output  
RSSI_OUT  
7
MUTED_AUD_OUTP  
UNMUTED_AUD_OUTP  
QUADRATURE_IN  
LIMITER_OUT  
LIMITER_DECOUPL  
LIMITER_DECOUPL  
LIMITER_IN  
8
mute audio output  
unmute audio output  
quadrature detector input terminal  
limiter amplifier output  
limiter amplifier decoupling pin  
limiter amplifier decoupling pin  
limiter amplifier input  
ground; negative supply  
IF amplifier output  
IF amplifier decoupling pin  
IF amplifier input  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
GND  
IF_AMP_OUT  
IF_AMP_DECOUPL  
IF_AMP_IN  
IF_AMP_DECOUPL  
MIXER_OUT  
IF amplifier decoupling pin  
mixer output  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
5 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
7. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
Parameter  
Conditions  
Min  
-
Max  
9
Unit  
V
supply voltage  
Tstg  
storage temperature  
ambient temperature  
65  
40  
+150  
+85  
C  
C  
Tamb  
operating  
8. Thermal characteristics  
Table 5.  
Symbol  
Zth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
SA615D/01 (SO20)  
SA615DK/01 (SSOP20)  
Typ  
Unit  
K/W  
K/W  
transient thermal impedance  
from junction to ambient  
90  
117  
9. Static characteristics  
Table 6.  
Static characteristics  
VCC = +6 V; Tamb = 25 C; unless specified otherwise.  
Symbol  
VCC  
Parameter  
Conditions  
Min  
4.5  
-
Typ  
Max  
8.0  
7.4  
-
Unit  
V
supply voltage  
supply current  
threshold voltage  
-
ICC  
5.7  
mA  
V
Vth  
mute switch-on  
mute switch-off  
1.7  
-
-
-
1.0  
V
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
6 of 26  
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
10. Dynamic characteristics  
Table 7.  
Dynamic characteristics  
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.  
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.  
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below  
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the  
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Mixer/oscillator section (external LO = 300 mV)  
fi  
input frequency  
-
500  
150  
5.0  
-
MHz  
MHz  
dB  
fosc  
oscillator frequency  
noise figure  
-
-
NF  
at 45 MHz  
-
-
IP3i  
Gp(conv)  
input third-order intercept point  
conversion power gain  
FL1 = 45.0 MHz; FL2 = 45.06 MHz  
matched 14.5 dBV step-up  
50 source  
-
12  
13  
-
dBm  
dB  
8.0  
-
-
1.7  
4.7  
-
dB  
Ri(RF)  
RF input resistance  
RF input capacitance  
mixer output resistance  
single-ended input  
3.0  
-
-
k  
Ci(RF)  
3.5  
4.0  
-
pF  
Ro(mix)  
IF section  
Gamp(IF)  
Glim  
MIXER_OUT pin  
1.25  
1.50  
k  
IF amplifier gain  
limiter gain  
50 source  
50 source  
-
-
-
39.7  
62.5  
109  
-
-
-
dB  
dB  
Pi(IF)  
IF input power  
for 3 dB input limiting sensitivity;  
dBm  
R17 = 5.1 k; test at IF_AMP_IN pin  
AM  
AM rejection  
audio level  
80 % AM 1 kHz  
25  
60  
33  
43  
dB  
RMS value; R10 = 100 k;  
150  
260  
mV  
15 nF de-emphasis  
unmuted audio level  
R11 = 100 k; 150 pF de-emphasis  
-
530  
12  
-
-
-
-
mV  
dB  
dB  
dB  
SINAD  
THD  
signal-to-noise-and-distortion ratio RF level 118 dB  
-
total harmonic distortion  
30  
42  
68  
S/N  
signal-to-noise ratio  
RSSI output voltage  
no modulation for noise  
-
[1]  
Vo(RSSI)  
IF; R9 = 100 k  
IF level = 118 dBm  
0
160  
2.5  
4.8  
80  
800  
mV  
V
IF level = 68 dBm  
1.7  
3.3  
IF level = 18 dBm  
3.6  
5.8  
V
RSSI(range) RSSI range  
R9 = 100 k; IF_AMP_OUT pin  
R9 = 100 k; IF_AMP_OUT pin  
-
-
-
-
-
-
-
-
dB  
dB  
k  
k  
k  
k  
k  
RSSI  
Zi(IF)  
Zo(IF)  
Zi(lim)  
Ro  
RSSI variation  
-
2  
IF input impedance  
IF output impedance  
limiter input impedance  
output resistance  
1.40  
0.85  
1.40  
-
1.6  
1.0  
1.6  
58  
unmuted audio  
muted audio  
-
58  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
7 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
Table 7.  
Dynamic characteristics …continued  
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.  
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.  
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below  
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the  
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
RF/IF section (internal LO)  
unmuted audio level  
RMS value; VCC = 4.5 V;  
RF level = 27 dBm  
-
-
450  
4.3  
-
-
mV  
V
Vo(RSSI)  
RSSI output voltage  
system; VCC = 4.5 V;  
RF level = 27 dBm  
[1] The generator source impedance is 50 , but the SA615 input impedance at pin 18 (IF_AMP_IN) is 1500 . As a result, IF level refers  
to the actual signal that enters the SA615 input (pin 8, MUTED_AUD_OUTP) which is about 21 dB less than the ‘available power’ at the  
generator.  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
8 of 26  
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
11. Application information  
R17  
C15  
5.1 kΩ  
FL1  
20  
FL2  
C23  
C21  
17  
C18 C17  
13  
19  
18  
16  
15  
14  
12  
11  
700 Ω  
IF amp  
limiter  
mixer  
quad  
detector  
RSSI  
mute  
switch  
OSCILLATOR  
1
2
3
4
5
6
7
8
9
10  
L3  
C3  
C1  
C9  
R9  
R10  
C12  
R11  
C13  
C8  
(1)  
R5  
C7  
L2  
C24  
C10  
C11  
C26  
C25  
L1  
C2  
45 MHz  
input  
C5  
C6  
X1  
C14  
aaa-012965  
The layout is very critical in the performance of the receiver. We highly recommend our demo  
board layout.  
All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher  
value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this  
capacitor ensures consistent good sensitivity in production. A 0.1 F bypass capacitor on the  
supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.  
(1) R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.  
Recommended value is 22 k, but should not be below 10 k.  
Fig 4. SA615 45 MHz application circuit  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
9 of 26  
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
Table 8.  
SA615 application component list  
Component Value  
Description  
NPO ceramic  
NPO ceramic  
Package  
C0805K  
C0805K  
Part number  
C1  
33 pF  
445-127x-1-ND  
445-7484-6-ND  
490-1994-2-ND  
311-1036-1-ND  
490-1994-2-ND  
399-3293-1-ND  
490-1994-2-ND  
311-1036-1-ND  
478-3117-1-ND  
311-1036-1-ND  
399-1161-1-ND  
399-1125-1-ND  
311-1036-1-ND  
311-1036-1-ND  
311-1036-1-ND  
311-1036-1-ND  
311-1036-1-ND  
311-1036-1-ND  
490-1994-2-ND  
C2  
220 pF  
C3  
5 pF to 30 pF  
100 nF 10 %  
5 pF to 30 pF  
1 nF  
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP  
100 nF 10 % monolithic ceramic C0805K  
NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP  
C5  
C6  
C7  
ceramic  
C0805K  
C0805K  
C0805K  
C1812  
C8  
10 pF  
NPO ceramic  
C9  
100 nF 10 %  
22 F  
monolithic ceramic  
tantalum  
C10[1]  
C11  
C12  
C13  
C14  
C15  
C17  
C18  
C21  
C23  
C24  
C25  
C26  
CN1  
CN2  
100 nF 10 %  
15 nF 10 %  
150 pF 2 %  
100 nF 10 %  
10.0 pF  
monolithic ceramic  
ceramic  
C0805K  
C0805K  
C0805K  
C0805K  
C0805K  
C0805K  
C0805K  
C0805K  
C0805K  
N1500 ceramic  
monolithic ceramic  
NPO ceramic  
100 nF 10 %  
100 nF 10 %  
100 nF 10 %  
100 nF 10 %  
monolithic ceramic  
monolithic ceramic  
monolithic ceramic  
monolithic ceramic  
5 pF to 30 pF trim NPO ceramic; Murata TZC3P300A 110R00 TRIMCAP  
470 pF  
39 pF  
monolithic ceramic  
monolithic ceramic  
8-pin header  
C0805K  
C0805K  
MA08-1  
399-8083-10ND  
BU-SMA-H  
J502-ND-142-  
0701-881/886  
520-142-0701-881  
FL1, FL2[2]  
ceramic filter;  
surface mount  
CFUKF455KB4X-R0  
Murata CFUKF455KB4X or equivalent  
L1  
330 nH  
Coilcraft 1008CS-331  
WE-KI_1008_B 1008CS-331  
L2  
1.2 H  
fixed inductor Coilcraft 1008CS-122XKLC WE-KI_1008_B 1008CS-122  
L3  
220 H  
fixed inductor  
WE-GF_L  
R0603  
1812LS-224XJB  
311-100KCRCT-ND  
311-100KCRCT-ND  
311-100KCRCT-ND  
311-5.10KCRDKR-ND  
568-2087-5-nd  
R9  
100 k  1 %  
100 k  1 %  
100 k  1 %  
5.1 k  5 %  
1/4 W metal film  
R10[3]  
R11[3]  
R17  
U1  
1/4 W metal film  
C0805K  
C0805K  
C0805K  
TSSOP20  
UM-1  
1/4 W metal film  
1/4 W carbon composition  
SA605DK  
X1  
44.545 MHz  
resonant 3rd-overtone crystal  
49HC/11453  
[1] This value can be reduced when a battery is the power source.  
[2] The ceramic filters can be 30 kHz SFG455A3s made by Murata, which have 30 kHz IF bandwidth (they come in blue), or 16 kHz  
CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.  
[3] Optional.  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
10 of 26  
 
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
(1)  
RF GENERATOR  
45 MHz  
SA615 DEMOBOARD  
V
(+6 V)  
CC  
(2)  
RSSI  
AUDIO  
DATA  
DC VOLTMETER  
(3)  
C-MESSAGE  
HP339A DISTORTION  
SCOPE  
(4)  
ANALYZER  
aaa-013153  
(1) The C-message filter has a peak gain of 100 dB for accurate measurements. Without the gain, the  
measurements may be affected by the noise of the scope and HP339 analyzer.  
(2) Set your RF generator at 45.000 MHz, use a 1 kHz modulation frequency and a 6 kHz deviation if  
you use 16 kHz filters, or 8 kHz if you use 30 kHz filters.  
(3) The smallest RSSI voltage (that is, when no RF input is present and the input is terminated) is a  
measure of the quality of the layout and design. If the lowest RSSI voltage is 250 mV or higher, it  
means that the receiver is in regenerative mode. In that case, the receiver sensitivity is worse than  
expected.  
(4) The measured typical sensitivity for 12 dB SINAD should be 0.22 V or 120 dBm at the RF input.  
Fig 5. SA615 application circuit test setup  
20  
6
5
4
3
2
1
0
RF = 45 MHz  
RSSI  
(V)  
IF = 455 kHz  
V
= 6 V  
CC  
AUDIO REF = 174 mV (RMS value)  
0
THD + NOISE  
AM (80 % MOD)  
NOISE  
(dB)  
−20  
THD + NOISE  
AM (80 % MOD)  
−40  
−60  
RSSI (V)  
−110  
−80  
NOISE  
−100  
−130  
−90  
−70  
−50  
−30  
−10  
10 20  
RF input level (dBm)  
aaa-012967  
Audio out:  
C message weighted  
0 dB reference = recovered audio for 8 kHz peak deviation (dB)  
Fig 6. Performance of the SA615 application board at 25 C  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
11 of 26  
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
11.1 Circuit description  
The SA615 is an IF signal processing system suitable for second IF or single conversion  
systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about  
40 MHz, with 39.7 dB of gain from a 50 source. The bandwidth of the limiter is about  
28 MHz with about 62.5 dB of gain from a 50 source. However, the gain/bandwidth  
distribution is optimized for 455 kHz, 1.5 ksource applications. The overall system is  
well-suited to battery operation as well as high-performance and high-quality products of  
all types.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include  
a noise figure of 5 dB, conversion gain of 13 dB, and input third-order intercept of  
10 dBm. The oscillator operates in excess of 1 GHz in L/C tank configurations. Hartley or  
Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators  
are recommended for crystal configurations up to 150 MHz.  
The output of the mixer is internally loaded with a 1.5 kresistor, permitting direct  
connection to a 455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is  
also 1.5 k. With most 455 kHz ceramic filters and many crystal filters, no impedance  
matching network is necessary. To achieve optimum linearity of the log signal strength  
indicator, there must be a 12 dBV insertion loss between the first and second IF stages. If  
the IF filter or inter-stage network does not cause 12 dBV insertion loss, a fixed or variable  
resistor can be added between the first IF output (pin 16, IF_AMP_OUT) and the  
inter-stage network.  
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.  
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is  
AC-coupled to a tuned quadrature network. This signal, which now has a 90phase  
relationship to the internal signal, drives the other port of the multiplier cell.  
Overall, the IF section has a gain of 90 dB. For operation at intermediate frequencies  
greater than 455 kHz, special care must be given to layout, termination, and inter-stage  
loss to avoid instability.  
The demodulated output of the quadrature detector is available at two pins, one  
continuous and one with a mute switch. Signal attenuation with the mute activated is  
greater than 60 dB. The mute input is very high-impedance and is compatible with CMOS  
or TTL levels.  
A log signal strength completes the circuitry. The output range is greater than 90 dB and is  
temperature compensated. This log signal strength indicator exceeds the criteria for  
AMPS or TACS cellular telephone.  
Remark: dBV = 20log VO / VI.  
SA615  
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© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
12 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
12. Test information  
−25 dB,  
−10.6 dB,  
−29 dB,  
929 Ω/50 Ω pad  
−10.6 dB,  
50 Ω/50 Ω pad  
−36 dB,  
156 kΩ/50 Ω pad  
1500 Ω/50 Ω pad 50 Ω/50 Ω pad  
50.5 Ω  
3880 Ω  
96.5 Ω  
51.5 Ω  
96.5 Ω  
51.7 Ω  
1.3 kΩ  
71.5 Ω  
32.6 Ω  
71.5 Ω  
32.8 Ω  
C24  
FL1  
R17  
C15  
C16  
C22 C20  
SW8 SW7  
C19  
5.1 kΩ  
SW9  
SW6  
SW5  
FL2  
C18 C17  
C23  
19  
C21  
20  
18  
17  
16  
15  
14  
13  
12  
11  
700 Ω  
IF amp  
limiter  
mixer  
quad  
detector  
RSSI  
mute  
switch  
OSCILLATOR  
1
2
3
4
5
6
7
8
9
10  
C9  
R9  
R10  
C12  
R11  
C3  
C1  
SW1  
SW3  
C8  
SW4  
C10  
C11  
C13  
L1  
C7  
L2  
C2  
IFT1  
C5  
C26  
‘C’ WEIGHTED  
AUDIO  
X1  
MEASUREMENT  
CIRCUIT  
SW2  
C6  
R1  
R3  
C14  
C3  
C4  
R2  
ext.  
LOC osc  
44.545 MHz  
R7  
30.5 Ω  
45.06  
MHz  
45 MHz  
R6  
R8  
178 Ω 39.2 Ω  
mini-circuit  
ZSC2-1B  
aaa-012966  
Fig 7. SA615 45 MHz test circuit (relays as shown)  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
13 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
Table 9.  
Automatic test circuit component list  
Description  
Component  
C1  
33 pF NPO ceramic  
C2  
180 pF NPO ceramic  
C3, C6  
5 pF to 30 pF variable capacitor; Murata TZC3P300A 110R00  
C5, C9, C11, C14, C17, 100 nF 10 % monolithic ceramic  
C18, C21, C23  
C7  
1 nF ceramic  
C8, C15  
C10[1]  
C12  
C13  
C26  
FL1  
10 pF NPO ceramic  
6.8 F tantalum (minimum)  
15 nF 10 % ceramic  
150 pF 2 % N1500 ceramic  
390 pF 10 % monolithic ceramic  
ceramic filter Murata SFG455A3 or equivalent  
FL2  
IFT1  
L1  
330 H variable shielded inductor, Toko 836AN-0129Z  
330 nH Coilcraft 1008CS-331  
L2  
1.2 H Coilcraft 1008CS-122  
X1  
44.545 MHz 3rd Overtone series resonant crystal in the HC-49U case  
100 k  1 % 1/4 W metal film  
R9  
R10, R11  
R17  
100 k  1 % 1/4 W metal film (optional)  
5.1 k  5 % 1/4 W carbon composition  
[1] This value can be reduced when a battery is the power source.  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
14 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
13. Package outline  
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Fig 8. Package outline SOT163-1 (SO20)  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
15 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
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Fig 9. Package outline SOT266-1 (SSOP20)  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
16 of 26  
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
14. Soldering of SMD packages  
This text provides a very brief insight into a complex technology. A more in-depth account  
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow  
soldering description”.  
14.1 Introduction to soldering  
Soldering is one of the most common methods through which packages are attached to  
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both  
the mechanical and the electrical connection. There is no single soldering method that is  
ideal for all IC packages. Wave soldering is often preferred when through-hole and  
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not  
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high  
densities that come with increased miniaturization.  
14.2 Wave and reflow soldering  
Wave soldering is a joining technology in which the joints are made by solder coming from  
a standing wave of liquid solder. The wave soldering process is suitable for the following:  
Through-hole components  
Leaded or leadless SMDs, which are glued to the surface of the printed circuit board  
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless  
packages which have solder lands underneath the body, cannot be wave soldered. Also,  
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,  
due to an increased probability of bridging.  
The reflow soldering process involves applying solder paste to a board, followed by  
component placement and exposure to a temperature profile. Leaded packages,  
packages with solder balls, and leadless packages are all reflow solderable.  
Key characteristics in both wave and reflow soldering are:  
Board specifications, including the board finish, solder masks and vias  
Package footprints, including solder thieves and orientation  
The moisture sensitivity level of the packages  
Package placement  
Inspection and repair  
Lead-free soldering versus SnPb soldering  
14.3 Wave soldering  
Key characteristics in wave soldering are:  
Process issues, such as application of adhesive and flux, clinching of leads, board  
transport, the solder wave parameters, and the time during which components are  
exposed to the wave  
Solder bath specifications, including temperature and impurities  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
17 of 26  
 
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
14.4 Reflow soldering  
Key characteristics in reflow soldering are:  
Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to  
higher minimum peak temperatures (see Figure 10) than a SnPb process, thus  
reducing the process window  
Solder paste printing issues including smearing, release, and adjusting the process  
window for a mix of large and small components on one board  
Reflow temperature profile; this profile includes preheat, reflow (in which the board is  
heated to the peak temperature) and cooling down. It is imperative that the peak  
temperature is high enough for the solder to make reliable solder joints (a solder paste  
characteristic). In addition, the peak temperature must be low enough that the  
packages and/or boards are not damaged. The peak temperature of the package  
depends on package thickness and volume and is classified in accordance with  
Table 10 and 11  
Table 10. SnPb eutectic process (from J-STD-020D)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
235  
350  
220  
< 2.5  
2.5  
220  
220  
Table 11. Lead-free process (from J-STD-020D)  
Package thickness (mm) Package reflow temperature (C)  
Volume (mm3)  
< 350  
260  
350 to 2000  
> 2000  
260  
< 1.6  
260  
250  
245  
1.6 to 2.5  
> 2.5  
260  
245  
250  
245  
Moisture sensitivity precautions, as indicated on the packing, must be respected at all  
times.  
Studies have shown that small packages reach higher temperatures during reflow  
soldering, see Figure 10.  
SA615  
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© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
18 of 26  
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
maximum peak temperature  
= MSL limit, damage level  
temperature  
minimum peak temperature  
= minimum soldering temperature  
peak  
temperature  
time  
001aac844  
MSL: Moisture Sensitivity Level  
Fig 10. Temperature profiles for large and small components  
For further information on temperature profiles, refer to Application Note AN10365  
“Surface mount reflow soldering description”.  
SA615  
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© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
19 of 26  
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
15. Soldering: PCB footprints  
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Fig 11. PCB footprint for SOT163-1 (SO20); reflow soldering  
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Fig 12. PCB footprint for SOT163-1 (SO20); wave soldering  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
20 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
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+[  
+\  
ꢅꢂꢃꢄꢅ ꢅꢂꢊꢄꢅ ꢊꢂꢁꢅꢅ ꢈꢂꢄꢅꢅ ꢇꢂꢆꢄꢅ ꢅꢂꢈꢅꢅ ꢅꢂꢃꢅꢅ ꢃꢂꢉꢅꢅ ꢄꢂꢆꢅꢅ ꢊꢂꢆꢅꢅ ꢊꢂꢈꢄꢅ  
VRWꢄꢁꢁꢃꢀBIU  
Fig 13. PCB footprint for SOT266-1 (SSOP20); reflow soldering  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
21 of 26  
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
16. Abbreviations  
Table 12. Abbreviations  
Acronym  
AM  
Description  
Amplitude Modulation  
AMPS  
ASK  
CMOS  
ESD  
ESR  
FM  
Advanced Mobile Phone System  
Amplitude Shift Keying  
Complementary Metal-Oxide Semiconductor  
ElectroStatic Discharge  
Equivalent Series Resistor  
Frequency Modulation  
FSK  
IF  
Frequency Shift Keying  
Intermediate Frequency  
L/C  
inductor-capacitor filter  
RF  
Radio Frequency  
RSSI  
SCA  
SINAD  
TACS  
THD  
TTL  
Received Signal Strength Indicator  
Subsidiary Communications Authorization  
Signal-to-Noise-And-Distortion ratio  
Total Access Communication System  
Total Harmonic Distortion  
Transistor-Transistor Logic  
Ultra High Frequency  
UHF  
VHF  
Very High Frequency  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
22 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
17. Revision history  
Table 13. Revision history  
Document ID Release date  
Data sheet status  
Change notice  
Supersedes  
SA615 v.4  
20141114  
Product data sheet  
-
SA615 v.3  
Modifications:  
Table 8 “SA615 application component list” updated  
Figure 4 “SA615 45 MHz application circuit” updated  
SA615 v.3  
SA615 v.2  
20140512  
Product data sheet  
Product specification  
Product specification  
-
SA615 v.2  
19971107  
853-1402 18665  
853-1402 08109  
NE/SA615 v.1  
-
NE/SA615 v.1 19921103  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
23 of 26  
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
18. Legal information  
18.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
18.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
18.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
24 of 26  
 
 
 
 
 
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
18.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
19. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
25 of 26  
 
 
SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
20. Contents  
1
General description. . . . . . . . . . . . . . . . . . . . . . 1  
2
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
3
4
4.1  
5
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 4  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5  
7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Thermal characteristics . . . . . . . . . . . . . . . . . . 6  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Application information. . . . . . . . . . . . . . . . . . . 9  
Circuit description. . . . . . . . . . . . . . . . . . . . . . 12  
Test information. . . . . . . . . . . . . . . . . . . . . . . . 13  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15  
8
9
10  
11  
11.1  
12  
13  
14  
Soldering of SMD packages . . . . . . . . . . . . . . 17  
Introduction to soldering . . . . . . . . . . . . . . . . . 17  
Wave and reflow soldering . . . . . . . . . . . . . . . 17  
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 17  
Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 18  
14.1  
14.2  
14.3  
14.4  
15  
16  
17  
Soldering: PCB footprints. . . . . . . . . . . . . . . . 20  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 23  
18  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 24  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 24  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
18.1  
18.2  
18.3  
18.4  
19  
20  
Contact information. . . . . . . . . . . . . . . . . . . . . 25  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP Semiconductors N.V. 2014.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 14 November 2014  
Document identifier: SA615  
 

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