SA676 [NXP]

Low-voltage mixer FM IF system; 低压混频器FM IF系统
SA676
型号: SA676
厂家: NXP    NXP
描述:

Low-voltage mixer FM IF system
低压混频器FM IF系统

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Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
DESCRIPTION  
PIN CONFIGURATION  
The SA676 is a low-voltage monolithic FM IF system incorporating a  
mixer/oscillator, two limiting intermediate frequency amplifiers,  
quadrature detector, logarithmic received signal strength indicator  
(RSSI), voltage regulator and audio and RSSI op amps. The SA676  
is available in a 20-pin SSOP (shrink small outline package).  
DK Package  
1
2
RF IN+  
20 MIXER OUT  
19  
IF AMP DECOUPLING  
RF IN– DECOUPLING  
18 IF AMP IN  
17  
3
4
OSC  
OUT  
The SA676 was designed for cordless telephone applications in  
which efficient and economic integrated solutions are required and  
yet high performance is desirable. Although the product is not  
targeted to meet the stringent specifications of high performance  
cellular equipment, it will exceed the needs for analog cordless  
phones. The minimal amount of external components and absence  
of any external adjustments makes for a very economical solution.  
IF AMP DECOUPLING  
OSC  
IN  
16 IF AMP OUT  
15 GND  
RSSI OUT  
5
6
7
V
CC  
14 LIMITER IN  
AUDIO FEEDBACK  
AUDIO OUT  
13  
8
9
LIMITER DECOUPLING  
12  
RSSI FEEDBACK  
LIMITER DECOUPLING  
FEATURES  
11 LIMITER OUT  
QUADRATURE IN 10  
Low power consumption: 3.5mA typical at 3V  
SR00514  
Mixer input to >100MHz  
Figure 1. Pin Configuration  
Mixer conversion power gain of 17dB at 45MHz  
XTAL oscillator effective to 100MHz (L.C. oscillator or external  
Audio output internal op amp  
oscillator can be used at higher frequencies)  
RSSI output internal op amp  
102dB of IF Amp/Limiter gain  
Internal op amps with rail-to-rail outputs  
2MHz IF amp/limiter small signal bandwidth  
ESD protection: Human Body Model 2kV  
Temperature compensated logarithmic Received Signal Strength  
Robot Model 200V  
Indicator (RSSI) with a 70dB dynamic range  
Low external component count; suitable for crystal/ceramic/LC  
APPLICATION  
Cordless phones  
filters  
ORDERING INFORMATION  
DESCRIPTION  
TEMPERATURE RANGE  
ORDER CODE  
SA676DK  
DWG #  
20-Pin Plastic Shrink Small Outline Package (Surface-mount)  
-40 to +85°C  
SOT266-1  
BLOCK DIAGRAM  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
RSSI  
MIXER  
QUAD  
OSCILLATOR  
+
+
V
REG  
AUDIO  
E
B
1
2
3
4
5
6
7
8
9
10  
SR00515  
Figure 2. Block Diagram  
6–129  
1993 Dec 15  
853-1726 11659  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
7
UNITS  
V
V
CC  
Single supply voltage  
T
Storage temperature range  
–65 to +150  
–40 to +85  
117  
°C  
STG  
T
Operating ambient temperature range  
Thermal impedance DK package  
°C  
A
θ
°C/W  
JA  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
= +3V, T = 25°C; unless otherwise stated.  
A
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
SA676  
TYP  
UNITS  
MAX  
MIN  
V
Power supply voltage range  
DC current drain  
2.7  
7.0  
5.0  
V
CC  
I
3.5  
mA  
CC  
AC ELECTRICAL CHARACTERISTICS  
T = 25°C; V = +3V, unless otherwise stated. RF frequency = 45MHz; +14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 2.4kΩ  
A
CC  
and R18 = 3.3k; RF level = –45dBm; FM modulation = 1kHz with ±5kHz peak deviation. Audio output with de-emphasis filter and C-message  
weighted filter. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical  
characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of  
the listed parameters.  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
Mixer/Osc section (ext LO = 220mV  
)
RMS  
f
Input signal frequency  
100  
100  
7.0  
MHz  
MHz  
dB  
IN  
f
Crystal oscillator frequency  
Noise figure at 45MHz  
OSC  
Third–order input intercept point (50Ω  
source)  
f1 = 45.0; f2 = 45.06MHz  
–10  
dBm  
Input RF level = –52dBm  
Matched 14.5dBV step–up  
50source  
Conversion power gain  
10  
17  
+2.5  
8
dB  
dB  
kΩ  
pF  
kΩ  
RF input resistance  
RF input capacitance  
Mixer output resistance  
Single–ended input  
3.0  
1.5  
4.0  
(Pin 20)  
1.25  
IF section  
IF amp gain  
50source  
44  
58  
dB  
dB  
dB  
mV  
dB  
dB  
dB  
V
Limiter gain  
50source  
AM rejection  
30% AM 1kHz  
Gain of two  
50  
Audio level  
60  
120  
17  
SINAD sensitivity  
Total harmonic distortion  
IF level –110dBm  
THD  
S/N  
–55  
60  
Signal–to–noise ratio  
No modulation for noise  
IF level = –110dBm  
IF level = –50dBm  
1
IF RSSI output, R = 2kΩ  
0.5  
1.7  
70  
.90  
2.2  
9
V
RSSI range  
dB  
kΩ  
kΩ  
kΩ  
kΩ  
IF input impedance  
IF output impedance  
Limiter input impedance  
Limiter output impedance  
Limiter output voltage  
Pin 18  
Pin 16  
Pin 14  
Pin 11  
Pin 11  
1.3  
1.3  
1.5  
0.3  
1.5  
0.3  
130  
mV  
RMS  
6–130  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
AC ELECTRICAL CHARACTERISTICS (Continued)  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
LIMITS  
TYP  
UNITS  
MAX  
MIN  
RF/IF section (int LO)  
System SINAD sensitivity  
RF level = –114dBm  
12  
dB  
NOTE:  
1. The generator source impedance is 50, but the SA676 input impedance at Pin 18 is 1500. As a result, IF level refers to the actual signal  
that enters the SA676 input (Pin 18) which is about 21dB less than the “available power” at the generator.  
simultaneous loss and impedance matching can be added between  
the first IF output (Pin 16) and the interstage network. The overall  
gain will then be 90dB with 2MHz bandwidth.  
CIRCUIT DESCRIPTION  
The SA676 is an IF signal processing system suitable for second IF  
systems with input frequency as high as 100MHz. The bandwidth of  
the IF amplifier and limiter is at least 2MHz with 90dB of gain. The  
gain/bandwidth distribution is optimized for 455kHz, 1.5ksource  
applications. The overall system is well-suited to battery operation  
as well as and high quality products of all types.  
The signal from the second limiting amplifier goes to a Gilbert cell  
quadrature detector. One port of the Gilbert cell is internally driven  
by the IF. The other output of the IF is AC-coupled to a tuned  
quadrature network. This signal, which now has a 90° phase  
relationship to the internal signal, drives the other port of the  
multiplier cell.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer  
characteristics include a noise figure of 7.0dB, conversion gain of  
17dB, and input third-order intercept of –10dBm. The oscillator will  
operate in excess of 100MHz in L/C tank configurations. Hartley or  
Colpitts circuits can be used up to 100MHz for xtal configurations.  
The demodulated output of the quadrature drives an internal op  
amp. This op amp can be configured as a unity gain buffer, or for  
simultaneous gain, filtering, and 2nd-order temperature  
compensation if needed. It can drive an AC load as low as 10kΩ  
with a rail-to-rail output.  
The output impedance of the mixer is a 1.5kresistor permitting  
direct connection to a 455kHz ceramic filter. The input resistance of  
the limiting IF amplifiers is also 1.5k. With most 455kHz ceramic  
filters and many crystal filters, no impedance matching network is  
necessary. The IF amplifier has 44dB of gain and 5.5MHz  
bandwidth. The IF limiter has 58dB of gain and 4.5MHz bandwidth.  
To achieve optimum linearity of the log signal strength indicator,  
there must be a 12dB(v) insertion loss between the first and second  
IF stages. If the IF filter or interstage network does not cause  
12dB(v) insertion loss, a fixed or variable resistor or an L pad for  
A log signal strength indicator completes the circuitry. The output  
range is greater than 70dB and is temperature compensated. This  
signal drives an internal op amp. The op amp is capable of  
rail-to-rail output. It can be used for gain, filtering, or 2nd-order  
temperature compensation of the RSSI, if needed.  
NOTE: dB(v) = 20log V  
/V  
OUT IN  
6–131  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
C26  
R18  
3.3k  
R17  
2.4k  
C15  
FLT1  
C23  
FLT2  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
MIXER  
RSSI  
QUAD  
OSCILLATOR  
+ –  
– +  
V
REG  
1
2
3
4
5
6
7
8
9
10  
R11  
10k  
C1  
C2  
C9  
C12  
C8  
R10  
10k  
L1  
C27  
C7  
2.2µF  
C10  
C5  
R19  
11k  
IFT1  
L2  
45MHz  
INPUT  
X1  
C6  
C19  
390pF  
C14  
RSSI  
OUTPUT  
AUDIO  
V
CC  
SA676DK Demoboard  
Application Component List  
C1 51pF NPO Ceramic  
C2 220pF NPO Ceramic  
C23  
C26  
C27  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
2.2µF Tantalum  
C5  
100nF +10% Monolithic Ceramic  
FLT 1 Ceramic Filter Murata SFG455A3 or equiv  
FLT 2 Ceramic Filter Murata SFG455A3 or equiv  
C6 5-30pF trim cap  
C7 1nF Ceramic  
IFT 1  
L1  
L2  
330µH TOKO 303LN-1130  
330nH Coilcraft UNI-10/142-04J08S  
0.8µH nominal TOKO 292CNS-T1038Z  
C8 10.0pF NPO Ceramic  
C9  
100nF +10% Monolithic Ceramic  
C10  
C12  
C14  
10µF Tantalum (minimum) *  
2.2µF +10% Tantalum  
100nF +10% Monolithic Ceramic  
X1 44.545MHz Crystal ICM4712701  
R5 Not Used in Application Board (see Note 8, pg 8)  
R10  
R11  
R17  
R18  
R19  
C15 10pF NPO Ceramic  
8.2k +5% 1/4W Carbon Composition  
10k +5% 1/4W Carbon Composition  
2.4k +5% 1/4W Carbon Composition  
3.3k +5% 1/4W Carbon Composition  
11k +5% 1/4W Carbon Composition  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
C19  
C21  
390pF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
* NOTE: This value can be reduced when a battery is the power source.  
SR00516  
Figure 3. SA676 45MHz Application Circuit  
6–132  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
RF GENERATOR  
45MHz  
SA676 DEMOBOARD  
RSSI AUDIO  
V
(+3)  
CC  
DE-EMPHASIS  
FILTER  
DC VOLTMETER  
C–MESSAGE  
HP339A DISTORTION  
ANALYZER  
SCOPE  
SR00517  
Figure 4. SA676 Application Circuit Test Set Up  
NOTES:  
1. C-message: The C-message and de-emphasis filter combination has a peak gain of 10 for accurate measurements. Without the gain, the  
measurements may be affected by the noise of the scope and HP339A analyzer. The de-emphasis filter has a fixed -6dB/Octave slope  
between 300Hz and 3kHz.  
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or  
16kHz CFU455Ds, also made by Murata (they come in black). All specifications and testing are done with the wideband filter.  
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or  
8kHz if you use 30kHz filters.  
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.45µV or –114dBm at the RF input.  
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.  
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and  
design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity  
will be worse than expected.  
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum  
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in  
production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.  
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22k, but should not  
be below 10k.  
6–133  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
mA  
6
V
= 7V  
CC  
5
4
3
2
V
= 5V  
CC  
I
(mA)  
CC  
V
= 3V  
CC  
V
= 2.7V  
CC  
°C  
–55  
–35  
–15  
5
25  
45  
65  
85  
105  
125  
TEMPERATURE (°C)  
SR00518  
Figure 5. I vs Temperature and Supply Voltage  
CC  
18.00  
17.75  
17.50  
17.25  
17.00  
16.75  
16.50  
16.25  
16.00  
2.7V  
3V  
7.0V  
–40  
–30  
–20  
–10  
0
10  
20  
30  
40  
50  
60  
70  
80  
TEMPERATURE (°C)  
SR00519  
Figure 6. Conversion Gain vs Temperature and Supply Voltage  
6–134  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
20  
10  
0
RF = 45MHz  
IF = 455kHz  
–10  
–20  
–30  
3rd ORDER PRODUCT  
FUND PRODUCT  
–40  
–50  
–60  
–70  
–80  
–66  
*50INPUT  
–56  
–46  
–36  
–26  
–16  
–6  
4
14  
24  
34  
RF* INPUT LEVEL (dBm)  
SR00520  
Figure 7. Mixer Third Order Intercept and Compression  
5
0
AUDIO  
–5  
–10  
V
= 3V  
CC  
RF = 45MHz  
–20  
–25  
–30  
–35  
–40  
–45  
–50  
–55  
–60  
–65  
DEVIATION = ±5kHz  
AUDIO LEVEL = 117.6mV  
RMS  
AM REJECTION  
THD + NOISE  
NOISE  
–125  
–115  
–105  
–95  
–85  
–75  
RF LEVEL (dBm)  
–65  
–55  
–45  
–35  
–25  
SR00521  
Figure 8. Sensitivity vs RF Level (+25°C)  
6–135  
1993 Dec 15  
Philips Semiconductors  
Product specification  
Low-voltage mixer FM IF system  
SA676  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
+85°C  
+27°C  
–40°C  
–125  
–115  
–105  
–95  
–85  
–75  
–65  
–55  
–45  
RF LEVEL (dBm)  
SR00522  
Figure 9. RSSI vs RF Level and Temperature - V = 3V  
CC  
V
300  
250  
200  
150  
100  
50  
V
= 7V  
CC  
V
V
= 5V  
CC  
CC  
= 3V  
V
= 2.7V  
CC  
°C  
0
–55  
–35  
–15  
5
25  
45  
65  
85  
105  
125  
SR00523  
Figure 10. Audio Output vs Temperature and Supply Voltage  
6–136  
1993 Dec 15  

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