TDA 8920 [NXP]
; - 12号的铝制车身绘（ RAL 7032 ）
| 型号： | TDA 8920 |
| 厂家： | 
NXP |
| 描述： |
|
| 文件： | 总36页 (文件大小：734K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TDA8920
INTEGRATED CIRCUITS
DATA SHEET
TDA8920
2 × 80 W class-D power amplifier
Product specification
2002 Sep 25
Supersedes data of 2002 Jun 06
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
CONTENTS
15
16
DYNAMIC AC CHARACTERISTICS (MONO
BTL APPLICATION)
1
2
3
4
5
6
7
8
FEATURES
APPLICATION INFORMATION
APPLICATIONS
16.1
16.2
16.3
16.4
16.5
16.6
16.7
16.8
16.9
16.10
16.11
16.12
BTL application
MODE pin
GENERAL DESCRIPTION
ORDERING INFORMATION
QUICK REFERENCE DATA
BLOCK DIAGRAM
Output power estimation
External clock
Heatsink requirements
Output current limiting
Pumping effects
Reference design
PCB information for HSOP24 encapsulation
Classification
PINNING
FUNCTIONAL DESCRIPTION
8.1
General
8.2
8.3
Pulse width modulation frequency
Protections
Reference design: bill of materials
Curves measured in the reference design
8.3.1
8.3.2
Over-temperature
Short-circuit across the loudspeaker terminals
and to supply lines
17
PACKAGE OUTLINE
SOLDERING
18
8.3.3
8.3.4
8.4
Start-up safety test
Supply voltage alarm
Differential audio inputs
18.1
Introduction to soldering surface mount
packages
Reflow soldering
Wave soldering
Manual soldering
18.2
18.3
18.4
18.5
9
LIMITING VALUES
10
11
12
13
14
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
STATIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Suitability of surface mount IC packages for
wave and reflow soldering methods
19
20
21
DATA SHEET STATUS
DEFINITIONS
DYNAMIC AC CHARACTERISTICS (STEREO
AND DUAL SE APPLICATION)
DISCLAIMERS
2002 Sep 25
2
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
1
FEATURES
2
APPLICATIONS
• High efficiency ( 90%)
• Television sets
• Operating voltage from ±12.5 to ±30 V
• Very low quiescent current
• Low distortion
• Home-sound sets
• Multimedia systems
• All mains fed audio systems
• Car audio (boosters).
• Usable as a stereo Single-Ended (SE) amplifier or as a
mono amplifier in Bridge-Tied Load (BTL)
• Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in
Bridge-Tied Load (BTL)
3
GENERAL DESCRIPTION
The TDA8920 is a high efficiency class-D audio power
amplifier with very low dissipation. The typical output
power is 2 × 80 W. The device comes in a HSOP24 power
package with a small internal heatsink. Depending on
supply voltage and load conditions a very small or even no
external heatsink is required. The amplifier operates over
a wide supply voltage range from ±12.5 to ±30 V and
consumes a very low quiescent current.
• High output power
• Good ripple rejection
• Internal switching frequency can be overruled by an
external clock
• No switch-on or switch-off plop noise
• Short-circuit proof across the load and to the supply
lines
• Electrostatic discharge protection
• Thermally protected.
4
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8920TH
HSOP24
plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
2002 Sep 25
3
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
5
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
General; VP = ±25 V
VP
Iq
operating supply voltage
±12.5 ±25
±30
75
−
V
quiescent current
efficiency
no load connected
Po = 30 W; SE: RL = 2 × 8 Ω; fi = 1 kHz
−
−
55
90
mA
%
η
Stereo single-ended configuration
Po output power
RL = 8 Ω; THD = 10%; VP = ±25 V; note 1 36
RL = 4 Ω; THD = 10%; VP = ±27 V; note 1 74
39
80
−
−
W
W
Mono bridge-tied load configuration
Po
output power
RL = 4 Ω; THD = 10%; VP = ±17 V; note 1 100
RL = 8 Ω; THD = 10%; VP = ±25 V; note 1 128
110
140
−
−
W
W
Note
1. See also Section 16.5.
2002 Sep 25
4
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
6
BLOCK DIAGRAM
BM4L61
bnok,lfuapgedwith
2002 Sep 25
5
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
7
PINNING
SYMBOL
PIN
DESCRIPTION
VSSA2
1
negative analog supply voltage for
channel 2
SGND2
VDDA2
2
3
signal ground channel 2
positive analog supply voltage for
channel 2
IN2−
4
5
6
negative audio input for channel 2
positive audio input for channel 2
IN2+
MODE
mode select input
handbook, halfpage
V
24
23
1
2
V
SSA2
SSD
(standby/mute/operating)
V
SGND2
OSC
7
oscillator frequency adjustment or
tracking input
DDP2
BOOT2 22
OUT2 21
3
V
DDA2
IN1+
IN1−
VDDA1
8
9
positive audio input for channel 1
negative audio input for channel 1
4
IN2−
IN2+
MODE
OSC
IN1+
IN1−
V
20
5
SSP2
10
positive analog supply voltage for
channel 1
HW 19
6
TDA8920TH
STABI 18
17
7
SGND1
VSSA1
11
12
signal ground for channel 1
negative analog supply voltage for
channel 1
V
8
SSP1
OUT1 16
9
PROT
VDDP1
13
14
time constant capacitor for
protection delay
BOOT1 15
10
V
DDA1
V
14
11 SGND1
12
positive power supply for
channel 1
DDP1
PROT 13
V
SSA1
BOOT1
OUT1
VSSP1
15
16
17
bootstrap capacitor for channel 1
PWM output from channel 1
MBL462
negative power supply voltage for
channel 1
STABI
HW
18
19
20
decoupling internal stabilizer for
logic supply
handle wafer; must be connected
to pin 24
VSSP2
negative power supply voltage for
channel 2
OUT2
BOOT2
VDDP2
21
22
23
PWM output from channel 2
bootstrap capacitor for channel 2
(1) Pin 19 should be connected to pin 24 in the application.
positive power supply voltage for
channel 2
Fig.2 Pin configuration.
VSSD
24
negative digital supply voltage
2002 Sep 25
6
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
8
FUNCTIONAL DESCRIPTION
General
The amplifier system can be switched in three operating
modes with the MODE select pin:
8.1
• Standby mode; with a very low supply current
The TDA8920 is a two channel audio power amplifier using
class-D technology. A typical application diagram is
illustrated in Fig.37. A detailed application reference
design is given in Section 16.8. The audio input signal is
converted into a digital Pulse Width Modulated (PWM)
signal via an analog input stage and PWM modulator.
To enable the output power transistors to be driven, this
digital PWM signal is applied to a control and handshake
block and driver circuits for both the high side and low side.
• Mute mode; the amplifiers are operational, but the audio
signal at the output is suppressed
• Operating mode (amplifier fully operational) with output
signal.
For suppressing plop noise the amplifier will remain,
automatically, in the mute mode for approximately 150 ms
before switching to operating mode; see Fig.4. In this time
the coupling capacitors at the input are fully charged.
An example of a switching circuit for driving the mode pin
is illustrated in Fig.3.
In this way a level shift is performed from the low power
digital PWM signal (at logic levels) to a high power PWM
signal which switches between the main supply lines.
A 2nd-order low-pass filter converts the PWM signal to an
analog audio signal across the loudspeaker.
The TDA8920TH one-chip class-D amplifier contains high
power D-MOS switches, drivers, timing and handshaking
between the power switches and some control logic. For
protection a temperature sensor and a maximum current
detector are built-in.
+5 V
handbook, halfpage
standby/
mute/on
mute
R
The two audio channels of the TDA8920TH contain two
PWMs, two analog feedback loops and two differential
input stages. It also contains circuits common to both
channels such as the oscillator, all reference sources, the
mode functionality and a digital timing manager.
MODE pin
R
SGND
MBL463
The TDA8920TH contains two independent amplifier
channels with high output power, high efficiency (90%),
low distortion and a low quiescent current. The amplifier
channels can be connected in the following configurations:
• Mono Bridge-Tied Load (BTL) amplifier
• Stereo Single-Ended (SE) amplifiers.
Fig.3 Example of mode select circuit.
2002 Sep 25
7
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
audio
switching
V
mode
When switching from standby
to mute there is a delay of
operating
100 ms before the output
starts switching. The audio
signal is available after the
mode pin has been set to
operating, but not earlier than
150 ms after switching to
mute.
4 V
2 V
mute
standby
0 V (SGND)
time
100 ms
>50 ms
audio
switching
V
mode
When switching from standby
to operating there is a first
delay of 100 ms before the
outputs starts switching. The
audio signal is available after
a second delay of 50 ms.
operating
4 V
standby
0 V (SGND)
time
100 ms
50 ms
MBL465
Fig.4 Timing on mode select input.
8.2
Pulse width modulation frequency
If two or more class-D amplifiers are used in the same
audio application, it is advisable to have all devices
operating at the same switching frequency.
The output signal of the amplifier is a PWM signal with a
carrier frequency of approximately 350 kHz. Using a
2nd-order LC demodulation filter in the application results
in an analog audio signal across the loudspeaker. This
switching frequency is fixed by an external resistor ROSC
connected between pin OSC and VSSA. With the resistor
value given in the schematic diagram of the reference
design, the carrier frequency is typical 350 kHz. The
carrier frequency can be calculated using the following
This can be realized by connecting all OSC pins together
and feed them from a external central oscillator. Using an
external oscillator it is necessary to force the OSC pin to a
DC-level above SGND for switching from internal to
external oscillator. In this case the internal oscillator is
disabled and the PWM will be switched on the external
frequency. The frequency range of the external oscillator
must be in the range as specified in the switching
characteristics; see Chapter 13.
9 × 109
equation: fOSC
=
Hz
------------------
ROSC
2002 Sep 25
8
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
Application in a practical circuit:
the demodulation filter) it will also be detected by the
‘start-up safety test’. Practical use of this test feature can
be found in detection of short-circuits on the printed-circuit
board.
Internal oscillator: Rosc connected from pin OSC to VSS
External oscillator: connect oscillator signal between pin
OSC and SGND; delete ROSC and COSC
.
Remark: this test is only operational prior to or during the
start-up sequence, and not during normal operation.
8.3 Protections
During normal operation the maximum current protection
is used to detect short-circuits across the load and with
respect to the supply lines.
Temperature, supply voltage and short-circuit protections
sensors are included on the chip. In the event that the
maximum current or maximum temperature is exceeded
the system will shut down.
8.3.4
SUPPLY VOLTAGE ALARM
8.3.1
OVER-TEMPERATURE
If the supply voltage falls below ±12.5 V the undervoltage
protection is activated and system shuts down correctly. If
the internal clock is used this switch-off will be silent and
without plop noise. When the supply voltage rises above
the threshold level the system is restarted again after
100 ms. If the supply voltage exceeds ±32 V the
If the junction temperature (Tj) exceeds 150 °C, then the
power stage will shut down immediately. The power stage
will start switching again if the temperature drops to
approximately 130 °C, thus there is a hysteresis of
approximately 20 °C.
overvoltage protection is activated and the power stages
shut down. They are re-enabled as soon as the supply
voltage drops below the threshold level.
8.3.2
SHORT-CIRCUIT ACROSS THE LOUDSPEAKER
TERMINALS AND TO SUPPLY LINES
An additional balance protection circuit compares the
positive (VDD) and the negative (VSS) supply voltages and
is triggered if the voltage difference between them
exceeds a certain level. This level depends on the sum of
both supply voltages. An expression for the unbalanced
threshold level is as follows: Vunb,thr ~ 0.15 × (VDD + VSS).
When the loudspeaker terminals are short-circuited or if
one of the demodulated outputs of the amplifier is
short-circuited to one of the supply lines this will be
detected by the current protection. If the output current
exceeds the maximum output current of 7.5 A, then the
power stage will shut down within less than 1 µs and the
high current will be switched off. In this state the
dissipation is very low. Every 100 ms the system tries to
restart again. If there is still a short-circuit across the
loudspeaker load or to one of the supply lines, the system
is switched off again as soon as the maximum current is
exceeded. The average dissipation will be low because of
this low duty cycle.
Example: with a symmetrical supply of ±30 V the
protection circuit will be triggered if the unbalance exceeds
approximately 9 V; see also Section 16.7.
8.4
Differential audio inputs
For a high common mode rejection ratio and a maximum
of flexibility in the application, the audio inputs are fully
differential. By connecting the inputs anti-parallel the
phase of one of the channels can be inverted, so that a
load can be connected between the two output filters.
In this case the system operates as a mono BTL amplifier
and with the same loudspeaker impedance an
approximately four times higher output power can be
obtained. The input configuration for mono BTL application
is illustrated in Fig.5; for more information see Chapter 16.
8.3.3
START-UP SAFETY TEST
During the start-up sequence, when the mode pin is
switched from standby to mute, the condition at the output
terminals of the power stage are checked. In the event of
a short-circuit at one of the output terminals to VDD or VSS
the start-up procedure is interrupted and the systems waits
for open-circuit outputs. Because the test is done before
enabling the power stages, no large currents will flow in the
event of a short-circuit. This system protects for
In the stereo single-ended configuration it is also
recommended to connect the two differential inputs in
anti-phase. This has advantages for the current handling
of the power supply at low signal frequencies.
short-circuits at both sides of the output filter to both supply
lines. When there is a short-circuit from the power PWM
output of the power stage to one of the supply lines (before
2002 Sep 25
9
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
OUT1
OUT2
IN1+
IN1−
V
SGND
in
IN2+
IN2−
power stage
MBL466
Fig.5 Input configuration for mono BTL application.
2002 Sep 25
10
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN. MAX. UNIT
VP
−
±30
5.5
±30
7.5
V
V
V
A
Vms
mode select switch input voltage
short-circuit voltage of output pins
repetitive peak current in output pin
storage temperature
with respect to SGND
−
Vsc
−
IORM
Tstg
note 1
−
−55
−40
−
+150 °C
Tamb
Tvj
ambient temperature
+85
150
°C
°C
virtual junction temperature
Ves(HBM)
electrostatic discharge voltage (HBM) note 2
all pins with respect to VDD (class 1a)
all pins with respect to SGND (class 1a) −1500 +1500 V
−1500 +1500 V
all pins with respect to VSS (class 1a)
−1500 +1500 V
−1500 +1500 V
all pins (except pin 19) with respect to
each other (class 1a)
pin 19 (HW) with respect to all other pins −500 +500
electrostatic discharge voltage (MM) note 3
all pins with respect to VDD (class B)
all pins with respect to SGND (class B) −250 +250
V
Ves(MM)
−250 +250
V
V
V
V
all pins with respect to VSS (class A1)
−150 +150
−100 +100
all pins with respect to each other
(class A1)
Notes
1. See also Section 16.6.
2. Human Body Model (HBM); Rs = 1500 Ω; C = 100 pF.
3. Machine Model (MM); Rs = 10 Ω; C = 200 pF; L = 0.75 mH.
10 THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
in free air; note 1
note 1
VALUE
35
UNIT
K/W
K/W
thermal resistance from junction to ambient
thermal resistance from junction to case
Rth(j-c)
1.3
Note
1. See also Section 16.5.
2002 Sep 25
11
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
11 QUALITY SPECIFICATION
In accordance with “SNW-FQ611-part D” if this type is used as an audio amplifier (except for ESD; see also Chapter 9).
12 STATIC CHARACTERISTICS
VP = ±25 V; Tamb = 25 °C; measured in Fig.9; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
VP
Iq
supply voltage range
note 1
±12.5 ±25
±30
75
V
quiescent current
standby current
no load connected
−
−
55
mA
µA
Istb
100
500
Mode select input; pin MODE
Vms
Ims
input voltage
input current
note 2
0
−
0
−
−
−
5.5
V
Vms = 5.5 V
notes 2 and 3
1000 µA
Vstb
input voltage in mode select for
standby mode
0.8
3.0
5.5
V
V
V
Vmute
Von
input voltage in mode select for
mute mode
notes 2 and 3
2.2
4.2
−
−
input voltage in mode select for on notes 2 and 3
mode
Audio inputs; pins IN2−, IN2+, IN1+ and IN1−
VI DC input voltage
Amplifier outputs; pins OUT1 and OUT2
note 2
−
0
−
V
VOOSE
output offset voltage
SE; on and mute
SE; on ↔ mute
BTL; on and mute
BTL; on ↔ mute
−
−
−
−
−
−
−
−
150
80
mV
mV
mV
mV
∆VOOSE
VOOBTL
∆VOOBTL
variation of output offset voltage
output offset voltage
215
115
variation of output offset voltage
Stabilizer; pin STABI
Vo(stab)
stabilizer output voltage
mute and operating; note 4
11
13
15
V
Temperature protection
Tprot
Thys
temperature protection activation
150
−
−
−
°C
°C
hysteresis on temperature
protection
−
20
Notes
1. The circuit is DC adjusted at VP = ±12.5 to ±30 V.
2. With respect to SGND (0 V).
3. The transition regions between standby, mute and on contain hysteresis (see Fig.6).
4. With respect to VSS1
.
2002 Sep 25
12
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL467
STBY
MUTE
ON
0
0.8
2.2
3.0
4.2
V
5.5
(V)
MODE
Fig.6 Mode select pin behaviour.
13 SWITCHING CHARACTERISTICS
VDD = ±25 V; Tamb = 25 °C; measured in Fig.9; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS
Switching frequency
MIN.
TYP.
MAX.
UNIT
fosc
typical internal oscillator
frequency
ROSC = 30.0 kΩ;
see Section 16.11
290
210
317
344
600
kHz
kHz
fosc(int)
VOSC
VOSC(trip)
ftrack
internal oscillator frequency note 1
range
−
voltage at OSC pin
external oscillator or
frequency tracking
SGND + 4.5 SGND + 5
SGND + 6 V
trip level at OSC pin for
tracking
external oscillator or
frequency tracking
−
SGND + 2.5
−
V
frequency range for tracking external oscillator or
frequency tracking
210
15
−
−
600
−
kHz
V
VP(OSC)(ext) minimum symmetrical
supply voltage for external
oscillator application
external oscillator
Note
1. Frequency set with ROSC, according to formula in Chapter 8.
2002 Sep 25
13
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
14 DYNAMIC AC CHARACTERISTICS (STEREO AND DUAL SE APPLICATION)
VP = ±25 V; RL = 4 Ω; fi = 1 kHz; fosc = 310 kHz; RsL < 0.1 Ω (note 1); Tamb = 25 °C; measured in Fig.9; unless
otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN. TYP. MAX. UNIT
Po
RL = 8 Ω; VP = ±20 V; THD = 0.5%; note 2 18
RL = 8 Ω; VP = ±20 V; THD = 10%; note 2 23
RL = 8 Ω; VP = ±25 V; THD = 0.5%; note 2 28
RL = 8 Ω; VP = ±25 V; THD = 10%; note 2 36
RL = 4 Ω; VP = ±25 V; THD = 0.5%; note 2 51
RL = 4 Ω; VP = ±25 V; THD = 10%; note 2 65
RL = 4 Ω; VP = ±27 V; THD = 0.5%; note 2 60
RL = 4 Ω; VP = ±27 V; THD = 10%; note 2 74
Po = 1 W; note 3
20
25
30
39
55
70
65
80
−
−
−
−
−
−
−
−
W
W
W
W
W
W
W
W
THD
total harmonic distortion
fi = 1 kHz
−
0.02
0.15
30
0.05
−
%
%
dB
%
fi = 10 kHz
−
Gv(cl)
closed-loop voltage gain
efficiency
29
85
31
−
η
Po = 30 W; SE: RL = 2 × 8 Ω; fi = 1 kHz;
90
note 4
SVRR
supply voltage ripple
rejection
on; fi = 100 Hz; note 5
on; fi = 1 kHz; note 6
−
55
50
55
80
68
200
230
220
70
−
−
dB
dB
dB
dB
kΩ
µV
µV
µV
dB
dB
µV
dB
40
−
−
mute; fi = 100 Hz; note 5
standby; fi = 100 Hz; note 5
−
−
−
Zi
input impedance
45
−
−
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 7
on; Rs = 10 kΩ; note 8
mute; note 9
400
−
−
−
−
αcs
channel separation
channel unbalance
output signal in mute
note 10
−
−
∆Gv
−
1
Vo(mute)
CMRR
note 11
−
−
400
−
common mode rejection ratio Vi(CM) = 1 V (RMS)
−
75
Notes
1. RsL = series resistance of inductor of low-pass LC filter in the application.
2. Output power is measured indirectly; based on RDSon measurement.
3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a lower
order low-pass filter a significantly higher value is found, due to the switching frequency outside the audio band.
Maximum limit is guaranteed but may not be 100% tested.
4. Output power measured across the loudspeaker load.
5. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 Ω.
6. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 Ω.
7. B = 22 Hz to 22 kHz; Rs = 0 Ω; maximum limit is guaranteed but may not be 100% tested.
8. B = 22 Hz to 22 kHz; Rs = 10 kΩ.
9. B = 22 Hz to 22 kHz; independent of Rs.
2002 Sep 25
14
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
10. Po = 1 W; Rs = 0 Ω; fι = 1 kHz.
11. Vi = Vi(max) = 1 V (RMS); maximum limit is guaranteed but may not be 100% tested.
15 DYNAMIC AC CHARACTERISTICS (MONO BTL APPLICATION)
VP = ±25 V; RL = 8 Ω; fi = 1 kHz; fosc = 310 kHz; RsL < 0.1 Ω (note 1); Tamb = 25 °C; measured in Fig.9; unless
otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN. TYP. MAX. UNIT
Po
RL = 8 Ω; VP = ±25 V; THD = 0.5%; note 2 100
RL = 8 Ω; VP = ±25 V; THD = 10%; note 2 128
RL = 8 Ω; VP = ±21 V; THD = 0.5%; note 2 73
RL = 8 Ω; VP = ±21 V; THD = 10%; note 2 92
RL = 4 Ω; VP = ±17 V; THD = 0.5%; note 2 66
RL = 4 Ω; VP = ±17 V; THD = 10%; note 2 100
Po = 1 W; note 3
110
140
79
−
−
−
−
−
−
W
W
W
W
W
W
100
75
110
THD
total harmonic distortion
fi = 1 kHz
−
0.015 0.05
%
fi = 10 kHz
−
0.02
36
−
%
Gv(cl)
η
closed-loop voltage gain
efficiency
35
85
−
37
−
dB
%
Po = 140 W; fi = 1 kHz; note 4
on; fi = 100 Hz; note 5
89
SVRR
supply voltage ripple
rejection
49
−
dB
dB
dB
dB
kΩ
µV
µV
µV
µV
dB
on; fi = 1 kHz; note 6
36
−
44
−
mute; fi = 100 Hz; note 5
standby; fi = 100 Hz; note 5
49
−
−
80
−
Zi
input impedance
22
−
34
−
Vn(o)
noise output voltage
on; Rs = 0 Ω; note 7
on; Rs = 10 kΩ; note 8
mute; note 9
280
300
280
−
560
−
−
−
−
Vo(mute)
CMRR
output signal in mute
note 10
−
500
−
common mode rejection ratio Vi(CM) = 1 V (RMS)
−
75
Notes
1. RsL = series resistance of inductor of low-pass LC filter in the application.
2. Output power is measured indirectly; based on RDSon measurement.
3. Total harmonic distortion is measured in a bandwidth of 22 Hz to 22 kHz. When distortion is measured using a low
order low-pass filter a significant higher value will be found, due to the switching frequency outside the audio band.
Maximum limit is guaranteed but may not be 100% tested.
4. Output power measured across the loudspeaker load.
5. Vripple = Vripple(max) = 2 V (p-p); fi = 100 Hz; Rs = 0 Ω.
6. Vripple = Vripple(max) = 2 V (p-p); fi = 1 kHz; Rs = 0 Ω.
7. B = 22 Hz to 22 kHz; Rs = 0 Ω; maximum limit is guaranteed but may not be 100% tested.
8. B = 22 Hz to 22 kHz; Rs = 10 kΩ.
9. B = 22 Hz to 22 kHz; independent of Rs.
10. Vi = Vi(max) = 1 V (RMS); fi = 1 kHz; maximum limit is guaranteed but may not be 100% tested.
2002 Sep 25
15
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
16 APPLICATION INFORMATION
16.1 BTL application
2
RL
× 2V × (1 – tmin × fosc
)
---------------------
P
RL + 1.2
BTL: P out_1%
=
---------------------------------------------------------------------------------------------
2 × RL
When using the system in the mono BTL application (for
more output power), the inputs of both channels must be
connected in parallel; the phase of one of the inputs must
be inverted; see Fig.5. In principle the loudspeaker can be
connected between the outputs of the two single-ended
demodulation filters.
2VP × (1 – tmin × fosc
)
Maximum current: I out^
=
--------------------------------------------------------
RL + 1.2
should not exceed 7.5 A.
Legend:
RL = load impedance
16.2 MODE pin
fosc = oscillator frequency
For correct operation the switching voltage at the mode pin
should be debounced. If the mode pin is driven by a
mechanical switch an appropriate debouncing low-pass
filter should be used. If the mode pin is driven by an
electronic circuit or microcontroller then it should remain at
the mute voltage level for at least 100 ms before switching
back to the standby voltage level.
tmin = minimum pulse width (typical 190 ns)
VP = single-sided supply voltage (so if supply ±30 V
symmetrical → VP = 30 V)
Pout_1% = output power just at clipping
Pout_10% = output power at THD = 10%
Pout_10% = 1.25 × Pout_1%
.
16.3 Output power estimation
16.4 External clock
The output power in several applications (SE and BTL)
can be estimated using the following expressions:
The minimum required symmetrical supply voltage for
external clock application is ±15 V (equally the minimum
asymmetrical supply for applications with an external clock
is 30 V).
2
RL
× V × (1 – tmin × fosc
)
---------------------
P
RL + 0.6
SE: Pout_1%
=
-----------------------------------------------------------------------------------------
2 × RL
When using an external clock the following accuracy of the
duty cycle of the external clock has to be taken into
account; 47.5% < DC, external clock < 52.5%.
VP × (1 – tmin × fosc
)
Maximum current: I out^
=
-----------------------------------------------------
RL + 0.6
A possible solution for an external clock oscillator circuit is
illustrated in Fig.7.
should not exceed 7.5 A.
V
DDA
2 kΩ
ASTAB−
ASTAB+
−TRIGGER
0−
11
0+
10
360 kHz 320 kHz
4
5
6
CTC
RTC
V
HOP
4.3 V
1
2
3
DD
14
7
120 pF
220
HEF4047BT
5.6 V
nF
V
9.1 kΩ
SS
RCTC
8
9
12
13
+TRIGGER MR
RETRIGGER
GND
CLOCK
MBL468
Fig.7 External oscillator circuit.
16
2002 Sep 25
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
16.5 Heatsink requirements
In some applications it may be necessary to connect an
external heatsink to the TDA8920TH. The determining
factor is the 150 °C maximum junction temperature
[Tj(max)] which cannot be exceeded. The expression below
shows the relationship between the maximum allowable
power dissipation and the total thermal resistance from
junction to ambient:
MBL469
30
handbook, halfpage
P
diss
(W)
(1)
20
Tj(max) – TA
----------------------------
Pdiss
Rth(j-a)
=
(2)
10
P
diss is determined by the efficiency (η) of the 1-chip
(3)
(4)
class-D amplifier. The efficiency measured in the
TDA8920TH as a function of output power is given in
Fig.18. The power dissipation can be derived as function
of output power; see Fig.17.
(5)
0
0
20
40
60
80
T
100
(°C)
The derating curves (given for several values of the Rth(j-a)
are illustrated in Fig.8. A maximum junction temperature
Tj = 150 °C is taken into account. From Fig.8 the maximum
allowable power dissipation for a given heatsink size can
be derived or the required heatsink size can be determined
at a required dissipation level.
)
amb
(1) Rth(j-a) = 5 K/W.
(2) Rth(j-a) = 10 K/W.
(3) Rth(j-a) = 15 K/W.
(4) Rth(j-a) = 20 K/W.
(5) Rth(j-a) = 35 K/W.
Example 1:
Fig.8 Derating curves for power dissipation as a
function of maximum ambient temperature.
Pout = 2 × 30 W into 8 Ω
Tj(max) = 150 °C
Tamb = 60 °C
Pdiss(tot) = 6 W (from Fig.17)
16.6 Output current limiting
The required Rth(j-a) = 15 K/W can be calculated
To guarantee the robustness of the class-D amplifier the
maximum output current which can be delivered by the
output stage is limited. An overcurrent protection is
included for each output power switch. When the current
flowing through any of the power switches exceeds a
defined internal threshold (e.g. in case of a short-circuit to
the supply lines or a short-circuit across the load), the
amplifier will shut down immediately and an internal timer
will be started. After a fixed time (e.g. 100 ms) the amplifier
is switched on again. If the requested output current is still
too high the amplifier will switch-off again. Thus the
amplifier will try to switch to the operating mode every
100 ms. The average dissipation will be low in this
situation because of this low duty cycle. If the overcurrent
condition is removed the amplifier will remain operating.
The Rth(j-a) of TDA8920 in free air is 35 K/W; the Rth(j-c) of
TDA8920 is 1.3 K/W, thus a heatsink of 13.7 K/W is
required for this example.
In actual applications, other factors such as the average
power dissipation with music source (as opposed to a
continuous sine wave) will determine the size of the
heatsink required.
Example 2:
Pout = 2 × 75 W into 4 Ω
Tj(max) = 150 °C
Tamb = 60 °C
Pdiss(tot) = 17.5 W (from Fig.17)
The required Rth(j-a) = 5.14 K/W
Because the duty cycle is low the amplifier will be switched
off for a relatively long period of time which will be noticed
as a so-called audio-hole; an audible interruption in the
output signal.
The Rth(j-a) of TDA8920TH in free air is 35 K/W; the Rth(j-c)
of TDA8920TH is 1.3 K/W, so a heatsink of 3.84 K/W is
required for this example.
2002 Sep 25
17
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
To trigger the maximum current protection in the
TDA8920, the required output current must exceed 7.5 A.
This situation occurs in case of:
16.7 Pumping effects
The TDA8920 class-D amplifier is supplied by a
symmetrical voltage (e.g VDD = +25 V, VSS = −25 V).
When the amplifier is used in a Single-Ended (SE)
configuration a so-called ‘pumping effect’ can occur.
During one switching interval energy is taken from one
supply (e.g. VDD), while a part of that energy is delivered
back to the other supply line (e.g. VSS) and visa versa.
When the voltage supply source cannot sink energy the
voltage across the output capacitors of that voltage supply
source will increase: the supply voltage is pumped to
higher levels.
• Short-circuits from any output terminal to the supply
lines (VDD or VSS
)
• Short-circuit across the load or speaker impedances or
a load impedance below the specified values of
4 and 8 Ω.
Even if load impedances are connected to the amplifier
outputs which have an impedance rating of 4 Ω, this
impedance can be lower due to the frequency
characteristic of the loudspeaker; practical loudspeaker
impedances can be modelled as an RLC network which
will have a specific frequency characteristic: the
The voltage increase caused by the pumping effect
depends on:
impedance at the output of the amplifier will vary with the
input frequency. A high supply voltage in combination with
a low impedance will result in large current requirements.
• Speaker impedance
• Supply voltage
• Audio signal frequency
Another factor which must be taken into account is the
ripple current which will also flow through the output power
switches. This ripple current depends on the inductor
values which are used, supply voltage, oscillator
frequency, duty factor and minimum pulse width. The
maximum available output current to drive the load
impedance can be calculated by subtracting the ripple
current from the maximum repetitive peak current in the
output pin, which is 7.5 A for the TDA8920TH.
• Capacitor value present on supply lines
• Source/sink currents of other channels.
The pumping effect should not cause a malfunction of
either the audio amplifier and/or the voltage supply source.
For instance, this malfunction can be caused by triggering
of the undervoltage or overvoltage protection or unbalance
protection of the amplifier.
16.8 Reference design
As a rule of thumb the following expressions can be used
to determine the minimum allowed load impedance
without generating audio holes:
The reference design for the single-chip class-D audio
amplifier for TDA8920TH is illustrated in Fig.9. The
Printed-Circuit Board (PCB) layout is shown in Fig.10. The
Bill Of Materials (BOM) is given in Table 1.
VP(1 – tmin osc)
f
Z ≥
– 0.6 SE application.
---------------------------------------
ORM – Iripple
L
I
16.9 PCB information for HSOP24 encapsulation
2VP(1 – tmin osc
f
)
Z ≥
– 1.2 BTL application.
-------------------------------------------
L
The size of the printed-circuit board is 74.3 × 59.10 mm,
dual sided 35 µm copper with 121 metallized through
holes.
I
ORM – Iripple
Legend:
ZL = load impedance
The standard configuration is a symmetrical supply (typical
±25 V) with stereo SE outputs (typical 2 × 4 Ω).
fosc = oscillator frequency
tmin = minimum pulse width (typical 190 ns)
The PCB is also suitable for mono BTL configuration
(1 × 8 Ω) also for symmetrical supply and for asymmetrical
supply.
VP = single-sided supply voltage
(so if the supply = ±30 V symmetrical → VP = 30 V)
IORM = maximum repetitive peak current in output pin;
see also Chapter 9
It is possible to use several different output filter inductors
such as 16RHBP or EP13 types to evaluate the
performance against the price or size.
Iripple = ripple current.
16.10 Classification
The application shows optimized signal and EMI
performance.
2002 Sep 25
18
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
BM4L70
2002 Sep 25
19
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
BM4L96
2002 Sep 25
20
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
16.11 Reference design: bill of materials
Table 1 Single-chip class-D audio amplifier printed-circuit board (version 4; 01-2002) for TDA8920TH
(see Figs 9 and 10)
BOM ITEM QUANTITY
REFERENCE
PART
TDA8920TH
DESCRIPTION
1
2
1
2
2
1
2
4
1
1
2
3
U1
Philips Semiconductors B.V.
Farnell 152-396
in1 and in2
cinch inputs
output connector
supply connector
27 µH
3
out1 and out2
Augat 5KEV-02
4
V
DD, GND and VSS
Augat 5KEV-03
5
L6 and L5
L1, L2, L3 and L4
S1
EP13 or 16RHBP
6
BEAD
Murata BL01RN1-A62
Knitter ATE1E M-O-M
BZX 79C5V6 DO-35
Panasonic M series ECA1VM471
7
PCB switch
5V6
8
Z1
9
C1 and C2
C3, C4 and C5
470 µF/35 V
47 µF 63 V
10
Panasonic NHG series
ECA1JHG470
11
12
13
6
9
C16, C17, C18, C19, C26
and C27
470 nF 63 V
MKT EPCOS B32529- 0474- K
C8, C9, C11, C14, C28, C29, 220 nF 63 V
C32, C35 and C38
SMD 1206
10
C6, C7, C10, C12, C13, C15, 100 nF 50 V
C34, C36, C37 and C39
SMD 0805
14
15
16
17
18
19
20
21
22
23
24
25
2
4
2
1
2
1
1
1
4
2
2
2
C20 and C21
C22, C23, C30 and C31
C24, C25
330 pF 50 V
15 nF 50 V
560 pF 100 V
47 pF 25V
SMD 0805
SMD 0805
SMD 0805
SMD 0805
SMD 0805
SMD 1206
C33
R4 and R3
R5
39 kΩ 0.1 W
30 kΩ 0.1 W
R1
10 kΩ 0.1 W; optional SMD 0805
9.1 kΩ 0.1 W; optional SMD 0805
R2
R6, R7, R8 and R9
R13 and R12
R10 and R11
J1 and J2
5.6 kΩ 0.1 W
22 Ω 1 W
SMD 0805
SMD 2512
SMD 1206
4.7 Ω 0.25 W
solder dot jumpers for ground reference in case of HUM
(60 Hz noise)
26
27
2
1
J3 and J4
heatsink
wire jumpers for BTL application
30 mm SK400; OK for maximum music dissipation;
1/8 Prated (2 × 75 W/8) in 2 × 4 Ω at Tamb = 70 °C
28
1
printed-circuit board material 1.6 mm thick epoxy FR4 material, double sided 35 µm
copper; clearances 300 µm; minimum copper track 400 µm
2002 Sep 25
21
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
16.12 Curves measured in the reference design
The curves illustrated in Figs 19 and 20 are measured with a restive load impedance. Spread in RI (e.g. due to the
frequency characteristics of the loudspeaker) can trigger the maximum current protection circuit; see Section 16.6.
The curves illustrated in Figs 29 and 30 show the effects of supply pumping when only one single-ended channel is
driven with a low frequency signal; see Section 16.7.
MBL471
MBL472
2
2
10
10
handbook, halfpage
THD+N
handbook, halfpage
THD+N
(%)
(%)
10
1
10
1
(1)
(2)
(1)
(2)
−1
−1
10
10
−2
(3)
−2
10
10
−3
10
−3
10
10
−2
−1
2
3
2
3
4
5
10
1
10
10
10
10
10
10
10
10
P
(W)
f (Hz)
i
o
2 × 8 Ω SE; VP = ±25 V.
(1) 10 kHz.
2 × 8 Ω SE; VP = ±25 V.
(1) Po = 10 W.
(2) 1 kHz.
(3) 100 Hz.
(2) Po = 1 W.
Fig.11 THD + N as a function of output power.
Fig.12 THD + N as a function of input frequency.
2002 Sep 25
22
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL473
MBL474
2
2
10
10
handbook, halfpage
THD+N
handbook, halfpage
THD+N
(%)
(%)
10
10
1
1
(1)
(1)
(2)
−1
(2)
(3)
−1
10
10
10
10
−2
−2
10
−3
10
−3
10
−2
−1
2
3
2
3
4
5
10
1
10
10
10
10
10
10
10
10
f (Hz)
P
(W)
i
o
2 × 4 Ω SE; VP = ±25 V.
(1) 10 kHz.
2 × 4 Ω SE; VP = ±25 V.
(1) Po = 10 W.
(2) 1 kHz.
(2) Po = 1 W.
(3) 100 Hz.
Fig.13 THD + N as a function of output power.
Fig.14 THD + N as a function of input frequency.
MBL475
MBL476
2
2
10
10
handbook, halfpage
handbook, halfpage
THD+N
THD+N
(%)
(%)
10
1
10
1
(1)
(2)
(1)
(2)
−1
−1
10
10
10
10
(3)
−2
−2
−3
10
−3
10
10
−2
−1
2
3
2
3
4
5
10
1
10
10
10
10
10
10
10
10
f (Hz)
P
(W)
i
o
1 × 8 Ω BTL; VP = ±25 V.
(1) 10 kHz.
1 × 8 Ω BTL; VP = ±25 V.
(1) Po = 10 W.
(2) 1 kHz.
(2) Po = 1 W.
(3) 100 Hz.
Fig.15 THD + N as a function of output power.
Fig.16 THD + N as a function of input frequency.
2002 Sep 25
23
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL478
25
MBL477
100
handbook, halfpage
handbook, halfpage
(3)
(1)
η
(%)
P
diss
(W)
(2)
80
20
(1)
(2)
60
40
15
10
5
(3)
20
0
0
0
10
−2
−1
2
3
30
60
90
120
150
(W)
10
1
10
10
10
(W)
P
P
o
o
VP = ±25 V; fi = 1 kHz.
(1) 2 × 4 Ω SE.
VP = ±25 V; fi = 1 kHz.
(1) 2 × 4 Ω SE.
(2) 1 × 8 Ω BTL.
(3) 2 × 8 Ω SE.
(2) 1 × 8 Ω BTL.
(3) 2 × 8 Ω SE.
Fig.17 Power dissipation as a function of output
power.
Fig.18 Efficiency as a function of output power.
MBL479
MBL480
200
200
handbook, halfpage
handbook, halfpage
P
P
(2)
o
o
(W)
160
(2)
(W)
160
120
120
80
(1)
(1)
(3)
(4)
80
(3)
(4)
40
40
0
0
10
15
20
25
30
V
35
(V)
10
15
20
25
30
V
35
(V)
DD
DD
THD + N = 0.5%; f = 1 kHz.
(1) 1 × 4 Ω BTL.
(3) 2 × 4 Ω SE.
(4) 2 × 8 Ω SE.
THD + N = 10%; f = 1 kHz.
(1) 1 × 4 Ω BTL.
(3) 2 × 4 Ω SE.
(4) 2 × 8 Ω SE.
(2) 1 × 8 Ω BTL.
(2) 1 × 8 Ω BTL.
Fig.19 Output power as a function of supply
voltage.
Fig.20 Output power as a function of supply
voltage.
2002 Sep 25
24
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL482
MBL481
0
0
handbook, halfpage
handbook, halfpage
α
α
cs
cs
(dB)
(dB)
−20
−20
−40
−60
−80
−40
−60
(1)
(2)
(1)
−80
(2)
−100
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
i
i
2 × 8 Ω SE; VP = ±25 V.
(1) Pout = 1 W.
2 × 4 Ω SE; VP = ±25 V.
(1) Pout = 1 W.
(2) Pout = 10 W.
(2) Pout = 10 W.
Fig.21 Channel separation as a function of input
frequency.
Fig.22 Channel separation as a function of input
frequency.
MBL483
MBL484
45
45
handbook, halfpage
handbook, halfpage
G
G
(dB)
(dB)
40
40
(1)
35
35
(1)
(2)
30
30
(2)
(3)
25
25
(3)
20
20
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
i
i
VP = ±25 V; Vi = 100 mV; Rs = 10 kΩ; Ci = 330 pF.
(1) 1 × 8 Ω BTL.
VP = ±25 V; Vi = 100 mV; Rs = 0 kΩ.
(1) 1 × 8 Ω BTL.
(2) 2 × 8 Ω SE.
(2) 2 × 8 Ω SE.
(3) 2 × 4 Ω SE.
(3) 2 × 4 Ω SE.
Fig.23 Gain as a function of input frequency.
Fig.24 Gain as a function of input frequency.
2002 Sep 25
25
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL486
MBL485
330
100
handbook, halfpage
handbook, halfpage
I
q
f
CLK
(mA)
80
(kHz)
320
60
40
310
300
20
0
290
0
10
20
30
40
0
10
20
30
40
V
(V)
V
(V)
DD
DD
RL is open-circuit.
RL is open-circuit.
Fig.25 Quiescent current as a function of supply
voltage.
Fig.26 Clock frequency as a function of supply
voltage.
MBL488
MBL487
0
0
handbook, halfpage
handbook, halfpage
SVRR
(dB)
SVRR
(dB)
−20
−20
(1)
−40
−40
(2)
(2)
−60
−60
(3)
(1)
(3)
−80
−80
−100
−100
2
3
4
5
0
1
2
3
4
5
10
10
10
10
10
f (Hz)
V
(V)
i
ripple(p-p)
VP = ±25 V; Vripple = 2 V (p-p) with respect to ground.
(1) Both supply lines in anti-phase.
(2) Both supply lines in phase.
VP = ±25 V; Vripple (P-P) with respect to ground.
(1) fripple = 1 kHz.
(2) fripple = 100 Hz.
(3) One supply line rippled.
(3) fripple = 10 Hz.
Fig.27 SVRR as a function of input frequency.
Fig.28 SVRR as a function of Vripple(p-p).
2002 Sep 25
26
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL490
MBL489
10
10
handbook, halfpage
handbook, halfpage
V
(1)
V
ripple(p-p)
(V)
ripple(p-p)
(1)
(V)
8
8
6
4
6
(2)
(2)
4
2
2
0
0
2
3
4
−2
−1
2
10
10
10
10
10
10
1
10
10
f (Hz)
P
(W)
i
o
VP = ±25 V; 3000 µF per supply line; f = 10 Hz.
(1) 1 × 4 Ω SE.
VP = ±25 V; 3000 µF per supply line.
(1) Pout = 30 W into 1 × 4 Ω SE.
(2) Pout = 15 W into 1 × 8 Ω SE.
(2) 1 × 8 Ω SE.
Fig.29 Supply voltage ripple as a function of output
power.
Fig.30 Supply voltage ripple as a function of input
frequency.
MBL491
10
MBL493
handbook, halfpage
150
handbook, halfpage
THD+N
(%)
I
q
(mA)
120
1
(1)
90
60
−1
10
(2)
(3)
(2)
−2
10
30
0
−3
10
100
200
300
400
500
600
(kHz)
f
100
200
300
400
500
f
600
(kHz)
CLK
CLK
VP = ±25 V; Po = 1 W into 8 Ω.
(1) 10 Hz.
VP = ±25 V; RL is open-circuit.
(2) 1 kHz.
(3) 100 Hz.
Fig.32 Quiescent current as a function of clock
frequency.
Fig.31 THD + N as a function of clock frequency.
2002 Sep 25
27
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MBL494
MBL495
1000
50
handbook, halfpage
handbook, halfpage
V
P
res
o
(mV)
800
(W)
40
600
400
30
20
200
0
10
0
100
100
200
300
400
500
f
600
(kHz)
200
300
400
500
f
600
(kHz)
CLK
CLK
VP = ±25 V; RL = 8 Ω.
VP = ±25 V; RL = 8 Ω; f = 1 kHz; THD + N = 10%.
Fig.33 PWM residual voltage as a function of clock
frequency.
Fig.34 Output power as a function of clock
frequency.
MLD831
10
V
o
(V)
1
−1
10
−2
10
−3
10
−4
10
−5
10
−6
10
0
1
2
3
4
5
6
V
(V)
mode
Vi = 100 mV; f = 1 kHz.
Fig.35 Output voltage as a function of mode voltage.
28
2002 Sep 25
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
MLD832
120
S/N
(dB)
(2)
(1)
80
40
0
−2
−1
2
3
10
10
1
10
10
10
P
(W)
o
VP = ±25 V; Rs = 10 kΩ.
(1) 2 × 4 Ω SE.
(2) 1 × 8 Ω BTL.
Fig.36 Signal-to-noise ratio as a function of output power.
2002 Sep 25
29
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
BM6L4
2002 Sep 25
30
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
17 PACKAGE OUTLINE
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
E
A
D
x
X
c
E
H
y
2
v
M
A
E
D
1
D
2
12
1
pin 1 index
Q
A
A
2
(A )
3
E
1
A
4
θ
L
p
detail X
24
13
w M
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
(1)
(2)
(2)
A
A
A
b
c
D
D
D
E
E
1
E
e
H
L
p
Q
v
w
x
y
Z
θ
UNIT
2
3
4
p
1
2
2
E
8°
0°
+0.08 0.53 0.32
−0.04 0.40 0.23
16.0 13.0 1.1 11.1 6.2
15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1
13.9 0.8
1.7
1.5
2.7
2.2
3.5
3.2
mm
1
3.5
0.35
0.25 0.25 0.03 0.07
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
SOT566-3
02-01-30
2002 Sep 25
31
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
18 SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
18.1 Introduction to soldering surface mount
packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
18.2 Reflow soldering
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
18.4 Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
18.3 Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2002 Sep 25
32
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
18.5 Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE
not suitable
REFLOW(2)
BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA
suitable
HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable(3)
HVSON, SMS
suitable
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2002 Sep 25
33
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
19 DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
20 DEFINITIONS
21 DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 25
34
Philips Semiconductors
Product specification
2 × 80 W class-D power amplifier
TDA8920
NOTES
2002 Sep 25
35
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/03/pp36
Date of release: 2002 Sep 25
Document order number: 9397 750 10092
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