TDA1015TD [NXP]
IC 0.5 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, Audio/Video Amplifier;
| 型号： | TDA1015TD |
| 厂家： | 
NXP |
| 描述： | IC 0.5 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, Audio/Video Amplifier 放大器 功率放大器 |
| 文件： | 总13页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1015
1 to 4 W audio power amplifier
November 1982
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The
very low applicable supply voltage of 3,6 V permits 6 V applications.
Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• thermal protection
• high input impedance
• low current drain
• limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range
VP
3,6 to 18
V
A
Peak output current
IOM
max. 2,5
Output power at dtot= 10%
VP = 12 V; RL = 4 Ω
Po
Po
Po
dtot
typ. 4,2
typ. 2,3
typ. 1,0
typ. 0,3
W
W
W
%
VP = 9 V; RL = 4 Ω
VP = 6 V; RL = 4 Ω
Total harmonic distortion at Po = 1 W; RL = 4 Ω
Input impedance
preamplifier (pin 8)
|Zi|
>
100
kΩ
kΩ
mA
power amplifier (pin 6)
Total quiescent current
Operating ambient temperature
Storage temperature
|Zi|
typ. 20
typ. 14
Itot
Tamb
Tstg
−25 to + 150 °C
−55 to + 150 °C
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.
November 1982
2
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
November 1982
3
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
RATINGS
Limiting values in accordance with Absolute Maximum System (IEC 134)
Supply voltage
VP
max.
max.
18
V
A
Peak output current
IOM
2,5
Total power dissipation
see derating curve Fig.2
Storage temperature
Tstg
−55 to + 150
−25 to + 150
°C
°C
Operating ambient temperature
A.C. short-circuit duration of load
during sine-wave drive; VP = 12 V
Tamb
tsc
max.
100 hours
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume VP = 12 V; RL = 4 Ω; Tamb = 45 °C maximum.
The maximum sine-wave dissipation is 1,8 W.
150 – 45
Rth j-a = Rth j-tab + Rth tab-h + Rth h-a
=
= 58 K/W.
----------------------
1, 8
Where Rth j-a of the package is 45 K/W, so no external heatsink is required.
November 1982
4
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
D.C. CHARACTERISTICS
Supply voltage range
VP
3,6 to 18
V
Repetitive peak output current
IORM
<
2
A
typ.
<
14
25
mA
mA
Total quiescent current at VP = 12 V
Itot
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 12 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
A.F. output power at dtot = 10% (note 1)
with bootstrap:
VP = 12 V; RL = 4 Ω
VP = 9 V; RL = 4 Ω
VP = 6 V; RL = 4 Ω
without bootstrap:
VP = 12 V; RL = 4 Ω
Po
Po
Po
typ.
typ.
typ.
4,2
2,3
1,0
W
W
W
Po
typ.
3,0
W
Voltage gain:
preamplifier (note 2)
power amplifier
total amplifier
Gv1
typ.
typ.
typ.
23
29
dB
dB
dB
dB
%
Gv2
Gv tot
52
49 to 55
0,3
Total harmonic distortion at Po = 1,5 W
dtot
B
typ.
<
1,0
%
Frequency response; −3 dB (note 3)
60 Hz to 15
kHz
Input impedance:
>
100
200
20
kΩ
kΩ
kΩ
kΩ
V
preamplifier (note 4)
|Zi1|
typ.
typ.
typ.
typ.
power amplifier
|Zi2|
Output impedance preamplifier
Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2)
Noise output voltage (r.m.s. value; note 5)
RS = 0 Ω
|Zo1|
1
Vo(rms)
0,8
Vn(rms)
Vn(rms)
typ.
typ.
typ.
typ.
0,2
0,5
8
mV
mV
µV
dB
RS = 10 kΩ
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Ω Vn(rms)
Ripple rejection (note 6); f = 100 Hz RR
38
November 1982
5
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Notes
1. Measured with an ideal coupling capacitor to the speaker load.
2. Measured with a load resistor of 20 kΩ.
3. Measured at Po = 1 W; the frequency response is mainly determined by C1 and C3 for the low frequencies and by
C4 for the high frequencies.
4. Independent of load impedance of preamplifier.
5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave).
6. Ripple rejection measured with a source impedance between 0 and 2 kΩ (maximum ripple amplitude: 2 V).
7. The tab must be electrically floating or connected to the substrate (pin 9).
Fig.3 Test circuit.
November 1982
6
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
APPLICATION INFORMATION
Fig.4 Circuit diagram of a 1 to 4 W amplifier.
Fig.5 Total quiescent current as a function of supply voltage.
7
November 1982
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.6 Total harmonic distortion as a function of output power across RL;
with bootstrap; − − − without
bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured at pin 2
(due to series resistance of C10).
Fig.7 Output power across RL as a function of supply voltage with bootstrap; dtot = 10%; typical values.
The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).
November 1982
8
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.8 Voltage gain as a function of frequency; Po relative to 0 dB = 1 W; VP = 12 V; RL = 4 Ω.
Fig.9 Total harmonic distortion as a function of frequency; P = 1 W; VP = 12 V; RL = 4 Ω.
November 1982
9
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.10 Ripple rejection as a function of R2 (see Fig.4); RS = 0; typical values.
Fig.11 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is
adapted for obtaining a constant bandwidth.
November 1982
10
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
Fig.12 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier;
B = 5 kHz; RS = 0; typical values.
Fig.13 Voltage gain as a function of R2 (see Fig.4).
November 1982
11
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
SOT110-1
D
D
1
q
A
2
P
P
1
A
3
q
2
q
1
A
A
4
E
pin 1 index
c
L
1
9
b
Q
e
Z
b
w
M
2
b
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
Z
max.
A
max.
2
(1)
(1)
E
UNIT
A
A
b
b
b
c
D
D
e
L
P
P
Q
q
q
q
2
w
A
3
4
1
2
1
1
1
18.5
17.8
8.7 15.8 1.40 0.67 1.40 0.48 21.8 21.4 6.48
8.0 15.4 1.14 0.50 1.14 0.38 21.4 20.7 6.20
3.9 2.75 3.4 1.75 15.1
3.4 2.50 3.2 1.55 14.9
4.4
4.2
5.9
5.7
2.54
mm
3.7
0.25 1.0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-02-25
SOT110-1
November 1982
12
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
SOLDERING
Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and
surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for
surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often
used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the
joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may
be necessary immediately after soldering to keep the temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more
than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1982
13
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