TDA1519CSP [NXP]
22WBTL or 2 x 11Wstereo power amplifier; 22WBTL或2 x 11Wstereo功率放大器
| 型号： | TDA1519CSP |
| 厂家： | 
NXP |
| 描述： | 22WBTL or 2 x 11Wstereo power amplifier |
| 文件： | 总20页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA1519C
22 W BTL or 2 × 11 W stereo power
amplifier
Product specification
2000 Mar 08
Supersedes data of 1998 Oct 16
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
FEATURES
GENERAL DESCRIPTION
• Requires very few external components for Bridge-Tied
Load (BTL)
The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line (SIL) power or
20-lead heatsink small outline package.
• Stereo or BTL application
For the TDA1519CTH (SOT418-2) the heatsink is
positioned on top of the package, thereby allowing an
external heatsink to be mounted on top. The heatsink of
the TDA1519CTD (SOT397-1) is facing the PCB thereby
allowing the heatsink to be soldered on the copper area of
the PCB.
• High output power
• Low offset voltage at output (important for BTL)
• Fixed gain
• Good ripple rejection
• Mute/standby switch
• Load dump protection
• AC and DC short-circuit-safe to ground and VP
• Thermally protected
• Reverse polarity safe
• Capability to handle high energy on outputs (VP = 0 V)
• No switch-on/switch-off plop
• Protected against electrostatic discharge
• Low thermal resistance
• Identical inputs (inverting and non-inverting)
• Pin compatible with TDA1519B (TDA1519C and
TDA1519CSP).
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
TDA1519C
SIL9P
SMS9P
HSOP20
HSOP20
plastic single in-line power package; 9 leads
SOT131-2
SOT354-1
SOT418-2
SOT397-1
TDA1519CSP
TDA1519CTH
TDA1519CTD
plastic surface mounted single in-line power package; 9 leads
heatsink small outline package; 20 leads; low stand-off
heatsink small outline package; 20 leads
2000 Mar 08
2
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
QUICK REFERENCE DATA
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
operating
6.0
14.4
17.5
V
non-operating
−
−
−
−
−
−
−
30
45
4
V
load dump protected
−
V
IORM
Iq(tot)
Istb
repetitive peak output current
total quiescent current
standby current
−
A
40
0.1
−
80
100
40
mA
µA
µA
Isw(on)
switch-on current
Inputs
Zi
input impedance
output power
BTL
25
50
−
−
−
−
kΩ
kΩ
stereo
Stereo application
Po
THD = 10%
RL = 4 Ω
−
6
−
−
−
−
W
RL = 2 Ω
−
11
−
W
αcs
channel separation
40
−
dB
µV
Vn(o)(rms)
noise output voltage (RMS value)
150
BTL application
Po
output power
THD = 10%; RL = 4 Ω
RS = 0 Ω
−
22
−
W
SVRR
supply voltage ripple rejection
f = 100 Hz
34
48
−
−
−
−
−
−
dB
dB
mV
°C
f = 1 to 10 kHz
−
∆VOO
DC output offset voltage
junction temperature
250
150
Tj
−
2000 Mar 08
3
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
BLOCK DIAGRAM
mute switch
1
NINV
C
m
60
kΩ
VA
4
OUT1
183
Ω
power stage
18.1 kΩ
V
P
8
M/SS
+
−
standby
switch
standby
reference
voltage
VA
15 kΩ
× 1
+
+
−
mute
switch
3
RR
15 kΩ
mute
reference
voltage
TDA1519C
18.1 kΩ
power stage
183
Ω
6
OUT2
VA
9
INV
C
m
60
kΩ
mute switch
input
reference
voltage
power
ground
(substrate)
signal
ground
2
7
5
MGL491
GND1
V
GND2
P
The pin numbers refer to the TDA1519C and TDA1519CSP.
Fig.1 Block diagram.
4
2000 Mar 08
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
PINNING
PIN
SYMBOL
DESCRIPTION
TDA1519C;
TDA1519CSP
TDA1519CTD
TDA1519CTH
NINV
GND1
RR
1
2
3
4
5
6
7
8
9
−
19
20
1
2
non-inverting input
1
ground 1 (signal)
supply voltage ripple rejection
output 1
20
18
16
13
11
10
9
OUT1
GND2
OUT2
VP
3
5
ground 2 (substrate)
output 2
8
10
11
12
positive supply voltage
mute/standby switch input
inverting input
M/SS
INV
n.c.
2, 4, 6, 7, 9
and 13 to 18
3 to 8, 12, 14, not connected
15, 17 and 19
page
page
halfpage
1
2
20 GND1
19
1
2
20 RR
RR
GND1
NINV
n.c.
1
2
3
4
5
6
7
8
9
NINV
19
NINV
18 n.c.
17
n.c.
18 OUT1
17
n.c.
OUT1
n.c.
GND1
RR
3
3
n.c.
n.c.
4
4
n.c.
OUT1
GND2
OUT2
TDA1519C
TDA1519CSP
16 n.c.
15 n.c.
16 GND2
15 n.c.
GND2
n.c.
5
n.c.
5
TDA1519CTD
TDA1519CTH
6
6
n.c.
n.c.
n.c.
n.c.
n.c.
7
14
13 n.c.
INV
7
14
V
P
8
8
13 OUT2
OUT2
n.c.
n.c.
M/SS
INV
n.c.
9
12
11 M/SS
9
12
11
INV
MGR561
10
10
V
P
V
P
M/SS
MGL937
MGL936
Fig.2 Pin configuration
(SOT131-2 and 354-1).
Fig.3 Pin configuration
(SOT397-1).
Fig.4 Pin configuration
(SOT418-2).
2000 Mar 08
5
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
FUNCTIONAL DESCRIPTION
The TDA1519C contains two identical amplifiers with differential input stages. The gain of each amplifier is fixed at 40 dB.
A special feature of this device is the mute/standby switch which has the following features:
• Low standby current (<100 µA)
• Low mute/standby switching current (low cost supply switch)
• Mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
operating
MIN.
MAX.
17.5
UNIT
VP
supply voltage
−
−
−
V
non-operating
30
45
V
V
load dump protected;
during 50 ms; tr ≥ 2.5 ms
Vsc
Vrp
AC and DC short-circuit-safe voltage
reverse polarity voltage
−
−
−
−
−
−
−
17.5
6
V
V
energy handling capability at outputs
non-repetitive peak output current
repetitive peak output current
total power dissipation
VP = 0 V
see Fig.5
200
6
mJ
A
IOSM
IORM
Ptot
Tj
4
A
25
W
°C
°C
junction temperature
150
+150
Tstg
storage temperature
−55
MGL492
30
handbook, halfpage
(1)
P
tot
(W)
20
(2)
(3)
10
0
−25
0
50
100
150
(°C)
T
amb
(1) Infinite heatsink.
(2) Rth(c-a) = 5 K/W.
(3) Rth(c-a) = 13 K/W.
Fig.5 Power derating curve for SIL9P.
2000 Mar 08
6
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
TDA1519C
40
40
K/W
K/W
TDA1519CTH and TDA1519CTD
thermal resistance from junction to case
TDA1519C
Rth(j-c)
3
3
K/W
K/W
TDA1519CTH and TDA1519CTD
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measurements taken using Fig.6; unless otherwise specified.
SYMBOL
Supplies
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
note 1
note 2
6.0
14.4
17.5
80
V
Iq(tot)
VO
total quiescent current
DC output voltage
−
−
−
40
6.95
−
mA
V
−
∆VOO
DC output offset voltage
250
mV
Mute/standby switch
Vsw(on)
switch-on voltage level
8.5
3.3
−
−
V
Mute condition
Vmute
VO
mute voltage
−
−
−
6.4
20
V
output signal in mute position VI = 1 V (max.); f = 20 Hz to 15 kHz −
mV
mV
∆VOO
DC output offset voltage
−
250
Standby condition
Vstb
Istb
standby voltage
standby mode
standby mode
0
−
−
−
2
V
standby current
−
100
40
µA
µA
Isw(on)
switch-on current
12
Notes
1. The circuit is DC adjusted at VP = 6 to 17.5 V and AC operating at VP = 8.5 to 17.5 V.
2. At VP = 17.5 to 30 V, the DC output voltage ≤0.5VP.
2000 Mar 08
7
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Stereo application (see Fig.6)
Po
output power
note 1
THD = 0.5%
THD = 10%
RL = 2 Ω; note 1
THD = 0.5%
THD = 10%
Po = 1 W
4
5
−
−
W
5.5
6.0
W
7.5
10
−
8.5
11
0.1
45
−
−
−
−
−
−
W
W
THD
fro(l)
total harmonic distortion
low frequency roll-off
%
−3 dB; note 2
−1 dB
−
Hz
kHz
dB
dB
dB
dB
dB
fro(h)
high frequency roll-off
20
39
40
45
45
80
Gv(cl)
SVRR
closed-loop voltage gain
supply voltage ripple rejection
40
−
41
−
on; notes 3 and 4
on; notes 3 and 5
mute; notes 3 and 6
−
−
−
−
standby;
−
−
notes 3 and 6
Zi
input impedance
50
60
75
kΩ
Vn(o)(rms) noise output voltage (RMS value)
note 7
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 8
RS = 10 kΩ
−
150
250
120
−
−
µV
µV
µV
dB
dB
−
500
−
−
αcs
∆Gv(ub)
channel separation
channel unbalance
40
−
−
0.1
1
BTL application (see Fig.7)
Po
output power
note 1
THD = 0.5%
THD = 10%
note 1
15
20
17
22
−
−
W
W
output power at VP = 13.2 V
THD = 0.5%
THD = 10%
Po = 1 W
−
−
−
−
13
−
-
W
W
%
17.5
0.1
THD
Bp
total harmonic distortion
power bandwidth
−
−
THD = 0.5%;
35 to
Hz
Po = −1 dB; with
respect to 15 W
15000
fro(l)
low frequency roll-off
high frequency roll-off
closed-loop voltage gain
−1 dB; note 2
−1 dB
−
45
−
−
Hz
fro(h)
Gv(cl)
20
45
−
kHz
dB
46
47
2000 Mar 08
8
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
SYMBOL
PARAMETER
CONDITIONS
MIN.
34
TYP.
MAX.
UNIT
dB
SVRR
supply voltage ripple rejection
on; notes 3 and 4
on; notes 3 and 5
mute; notes 3 and 6
−
−
−
−
−
−
−
−
48
48
80
dB
dB
dB
standby;
notes 3 and 6
Zi
input impedance
25
30
38
kΩ
Vn(o)(rms) noise output voltage (RMS value)
note 7
on; RS = 0 Ω
on; RS = 10 kΩ
mute; note 8
−
−
−
200
350
180
−
µV
µV
µV
700
−
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of RS (Vi = 0 V).
2000 Mar 08
9
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
APPLICATION INFORMATION
standby switch
V
P
100 µF
2200
µF
100
nF
3
8
7
input
reference
voltage
internal
1/2 V
P
TDA1519C
−
+
40 dB
−
60 kΩ
40 dB
60 kΩ
220 nF
+
220 nF
1
9
non-inverting input
inverting input
2
5
4
6
MGL493
signal
power
ground ground
1000
µF
Fig.6 Stereo application diagram (SOT131-2 and SOT354-1).
standby switch
V
P
2200
µF
100
nF
3
8
7
input
reference
voltage
internal
1/2 V
P
TDA1519C
−
+
40 dB
−
60 kΩ
40 dB
60 kΩ
220 nF
+
1
9
non-inverting input
to pin 9
to pin 1
2
5
4
6
MGL494
signal
ground ground
power
R
= 4 Ω
L
Fig.7 BTL application diagram (SOT131-2 and SOT354-1).
10
2000 Mar 08
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
MGR539
60
handbook, halfpage
I
q(tot)
(mA)
50
40
30
0
4
8
12
16
20
V
(V)
P
Fig.8 Total quiescent current (Iq(tot)) as a function of supply voltage (VP).
MGR540
30
handbook, halfpage
P
o
(W)
20
THD = 10%
10
0.5%
0
0
4
8
12
16
20
V
(V)
P
Fig.9 Output power (Po) as a function of supply voltage (VP) for BTL application at RL = 4 Ω; f = 1 kHz.
2000 Mar 08
11
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
MGR541
12
handbook, halfpage
THD
(%)
8
4
0
10
−1
2
1
10
10
P
(W)
o
Fig.10 Total harmonic distortion (THD) as a function of output power (Po) for BTL application at RL = 4 Ω;
f = 1 kHz.
MGR542
0.6
handbook, halfpage
THD
(%)
0.4
0.2
0
2
3
4
10
10
10
10
f (Hz)
Fig.11 Total harmonic distortion (THD) as a function of operating frequency (f) for BTL application at RL = 4 Ω;
Po = 1 W.
2000 Mar 08
12
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
PACKAGE OUTLINES
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
non-concave
x
D
h
D
E
h
view B: mounting base side
d
A
2
B
E
j
A
1
b
L
c
1
9
e
Q
w
M
Z
b
p
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
b
max.
1
(1)
(1)
(1)
UNIT
A
b
c
D
d
D
E
e
E
h
j
L
Q
w
x
Z
2
p
h
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
12.2
11.8
3.4
3.1
17.2
16.5
2.00
1.45
2.1
1.8
6
mm
2.0
1.1
10
2.54
0.25
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-03-11
99-12-17
SOT131-2
2000 Mar 08
13
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
SMS9P: plastic surface mounted single in-line power package; 9 leads
SOT354-1
D
y
d
non-concave
x
heatsink
A
D
2
h
heatsink
E
h
j
E
L
Q
A
1
L
p
c
9
1
θ
w
M
e
Z
b
p
(A )
3
A
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
A
A
b
c
D
d
D
E
e
E
h
L
L
p
Q
w
x
y
Z
θ
j
1
2
3
p
h
4.9 0.35 4.6
4.2 0.05 4.4
0.75 0.48 24.0 20.0
0.60 0.38 23.6 19.6
12.2
11.8
3.4
3.1
7.4
6.6
3.4
2.8
2.1
1.9
2.00
1.45
3°
0°
6
mm
10
2.54
0.25
0.25 0.03 0.15
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
98-10-08
99-12-17
SOT354-1
2000 Mar 08
14
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-2
E
A
D
x
X
c
E
H
y
2
v
M
A
E
D
1
D
2
10
1
pin 1 index
Q
A
A
2
(A )
3
E
1
A
4
θ
L
p
detail X
20
11
w M
Z
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
(1)
(2)
(2)
A
A
A
b
c
D
D
D
E
E
1
E
e
H
L
p
Q
v
w
x
y
Z
θ
UNIT
2
3
4
p
1
2
2
E
8°
0°
+0.12 0.53 0.32
−0.02 0.40 0.23
16.0 13.0 1.1 11.1 6.2
15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1
13.9 0.8
1.7
1.5
2.5
2.0
3.5
3.2
mm
1.27
3.5
0.35
0.25 0.25 0.03 0.07
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
98-02-25
99-11-12
SOT418-2
2000 Mar 08
15
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
HSOP20: plastic, heatsink small outline package; 20 leads
SOT397-1
E
A
D
E
2
X
c
y
H
v
M
A
E
D
1
D
2
11
20
Q
A
2
A
E
1
(A )
3
A
A
4
1
pin 1 index
θ
L
p
detail X
1
Z
10
w M
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
E
A
A
A
A
b
c
D
D
D
E
E
e
H
L
p
Q
v
w
y
Z
θ
UNIT
1
2
3
4
p
1
2
1
2
E
max.
0.3
0.1
3.3
3.0
0.1 0.53 0.32 16.0 13.0 1.1 11.1 6.2
0.40 0.23 15.8 12.6 0.9 10.9 5.8
2.9
2.5
14.5 1.1 1.5
13.9 0.8 1.4
2.5
2.0
8°
0°
mm
1.27
3.6
0.35
0.25 0.25 0.1
0
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-11-03
99-11-12
SOT397-1
2000 Mar 08
16
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
SOLDERING
Introduction
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
• For packages with leads on two sides and a pitch (e):
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
300 and 400 °C, contact may be up to 5 seconds.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Surface mount packages
REFLOW SOLDERING
MANUAL SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Mar 08
17
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
WAVE
REFLOW(1) DIPPING
suitable(2)
MOUNTING
PACKAGE
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
−
suitable
Surface mount
BGA, LFBGA, SQFP, TFBGA
not suitable
not suitable(3)
suitable
suitable
−
−
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS
PLCC(4), SO, SOJ
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable
−
−
−
not recommended(4)(5) suitable
not recommended(6)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 08
18
Philips Semiconductors
Product specification
22 W BTL or 2 × 11 W stereo power
amplifier
TDA1519C
NOTES
2000 Mar 08
19
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Pakistan: see Singapore
Belgium: see The Netherlands
Brazil: see South America
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
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Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
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Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
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France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
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South America: Al. Vicente Pinzon, 173, 6th floor,
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Tel. +49 40 2353 60, Fax. +49 40 2353 6300
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Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
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Tel. +91 22 493 8541, Fax. +91 22 493 0966
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Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
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TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
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ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
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Tel. +39 039 203 6838, Fax +39 039 203 6800
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252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
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MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
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Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/02/pp20
Date of release: 2000 Mar 08
Document order number: 9397 750 06633
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