TDA1572T [NXP]
AM receiver; AM接收器
NXP 
INTEGRATED CIRCUITS
DATA SHEET
TDA1572T
AM receiver
May 1992
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
AM receiver
TDA1572T
GENERAL DESCRIPTION
Features
The TDA1572T integrated AM receiver circuit performs all
the active functions and part of the filtering required of an
AM radio receiver. It is intended for use in mains-fed home
receivers and car radios. The circuit can be used for
oscillator frequencies up to 50 MHz and can handle RF
signals up to 500 mV.
• Inputs protected against damage by static discharge
• Gain-controlled RF stage
• Double balanced mixer
• Separately buffered, voltage-controlled and
temperature-compensated oscillator, designed for
simple coils
RF radiation and sensitivity to interference are minimized
by an almost symmetrical design. The controlled-voltage
oscillator provides signals with extremely low distortion
and high spectral purity over the whole frequency range,
even when tuning with variable capacitance diodes. If
required, band switching diodes can easily be applied.
Selectivity is obtained using a block filter before the IF
amplifier.
• Gain-controlled IF stage with wide AGC range
• Full-wave, balanced envelope detector
• Internal generation of AGC voltage with possibility of
second-order filtering
• Buffered field strength indicator driver with short-circuit
protection
• AF preamplifier with possibilities for simple AF filtering
• Electronic standby switch
• IF output for stereo demodulator and search tuning.
QUICK REFERENCE DATA
SYMBOL
VP
PARAMETER
Supply voltage range
CONDITIONS
MIN.
7.5
TYP.
8.5
MAX.
14.0
UNIT
V
IP
Supply current range
VP = 8.5 V
15
25
28
mA
RF input voltage (RMS value)
for (S + N)/N = 6 dB
ViFR(rms)
ViRF(rms)
VoIF(rms)
m = 30%
−
1.5
−
µV
for THD = 3%
m = 80%
−
500
230
−
mV
mV
IF output voltage (RMS value)
AF output voltage (RMS value)
Vi = 2 mV(rms)
Vi = 2 mV(rms);
fi = 1 MHz; m = 30%;
fm = 400 Hz
180
290
VoAF(rms)
240
−
310
86
390
−
mV
dB
V
AGC range
Change of Vi for 1 dB
change of VoAF
∆Vi
Indicator driver (pin 13)
Output voltage
Vi = 500 mV(rms);
Vo
RL = 2.7 kΩ
2.5
2.8
3.1
PACKAGE OUTLINE
20-lead mini-pack; plastic (SO20; SOT163A); SOT163-1; 1996 August 13.
May 1992
2
Philips Semiconductors
Product specification
AM receiver
TDA1572T
May 1992
3
Philips Semiconductors
Product specification
AM receiver
TDA1572T
PINNING
1
2
3
4
5
6
7
8
9
MXO
STB
mixer output
standby switch
IF input 1
IFI1
IFI2
IF input 2
DET
detector
AFO1
AGC1
ACG2
AFO2
AF output 1
AGC stage 1
AGC stage 2
AF output 2
not connected
not connected
IF output
10 n.c.
11 n.c.
12 IFO
13 IND
14 OSO
15 OSC1
16 OSC2
17 VP
indicator output
buffered oscillator output
oscillator 1
oscillator 2
supply voltage
RF input 1
18 RFI1
19 RFI2
20 GND
RF input 2
Fig.2 Pinning diagram.
ground
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
FUNCTIONAL DESCRIPTION
Gain-controlled RF stage and mixer
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.
Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are
handled with low distortion and the (S + N)/N ratio of small signals is improved. Low noise working is achieved in the
differential amplifier by using transistors with low base resistance.
A double balanced mixer provides the IF output signal to pin 1.
Oscillator
The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V15-20. An extra
buffered oscillator output (pin 14) is available for driving a synthesizer. If this is not needed, resistor RL(14) can be omitted.
Gain-controlled IF amplifier
This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter.
Both stages are gain-controlled by the AGC negative feedback network. The IF output is available at pin 12.
Detector
The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual IF carrier is
blocked from the signal path by an internal low-pass filter.
AF preamplifier
This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series
resistor which, together with an external capacitor, yields the required low-pass for AF filtering.
AGC amplifier
The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the
AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives
fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced
by using capacitors of smaller value in the external filter (C16 and C17). The AGC voltage is fed to the RF and IF stages
via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.
Field strength indicator output
A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input
signals over the whole dynamic range. If the field strength information is not needed, RL(13) can be omitted.
Standby switch
This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and AF
preamplifier are switched off.
Short-circuit protection
All pins have short-circuit protection to ground.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
Supply voltage (pin 17)
MIN.
MAX.
16
UNIT
VP = V17-20
|V18-19
−
−
−
−
−
−
V
V
V
V
|
Input voltage
12
−V18-19; −V19-20
0.6
V18-19; V19-20
VP
I18 ; I20
Ptot
Input current (pins 18 and 20)
Total power dissipation
Storage temperature range
Operating ambient temperature range
Junction temperature
Electrostatic handling(1)
all pins except pins 3, 6, 9, 14
pins 3, 6, 14
200
500
+150
+85
+125
mA
mW
°C
Tstg
−55
−40
−
Tamb
Tj
°C
°C
Ves
Ves
Ves
−2000
−1500
−1000
+2000
+2000
+2000
V
V
V
pin 9
Note
1. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor; (5 pulses, both polarities).
THERMAL RESISTANCE
From junction to ambient (in free air)
Rth j-a (max.)
=
95 K/W
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
CHARACTERISTICS
VP = V17-20 = 8.5 V; Tamb = 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all
voltages referenced to ground; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Supply
VP
IP
Supply voltage (pin 17)
Supply current (pin 17)
7.5
8.5
14.0
V
15
25
28
mA
RF stage and mixer (pins 18 and 19)
VI
Zi
DC input voltage
−
VP/2
5.5
25
8
−
−
−
−
−
−
−
V
RF input impedance at VI < 300 µV (rms)
RF input capacitance
−
kΩ
pF
kΩ
pF
kΩ
pF
Ci
Zi
−
RF input impedance at VI > 10 mV (rms)
RF input capacitance
−
Ci
Zo
Co
−
22
−
IF output impedance (pin 1)
IF output capacitance
200
−
6
Conversion transconductance
before start of AGC
I1/Vi
−
−
6.5
5
−
−
mA/V
V
Maximum IF output voltage, inductive
coupling to pin 1 (peak-to-peak value)
DC value of output current;
at VI = 0 V (pin 1)
V1-17(p-p)
IO
−
−
1.2
30
−
−
mA
dB
AGC range of input stage
RF signal handling capability
Input voltage (RMS value)
for THD = 3% at m = 80%
Vi(rms)
−
500
−
mV
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Oscillator
Frequency range
fosc
0.1
−
60
MHz
Voltage amplitude (pins 15 to 16)
(RMS value)
V(rms)
R(ext)
80
130
150
200
mV
External load impedance (pins 16 to 15)
External load impedance for no
oscillation (pins 16 to 15)
Supply voltage ripple rejection
at VP = 100 mV(rms); fp = 100 Hz
(SVRR = 20 log [V17/V15])
Source voltage for switching diodes
(6 x VBE) (pin 15)
0.5
−
kΩ
R(ext)
−
−
60
Ω
SVRR
V15-20
−IO
−
−
0
55
4.2
−
−
dB
V
−
DC output current (for switching
diodes) (pin 15)
20
mA
Change of output voltage at
∆I15 = 20 mA (switch to maximum load)
(pin 15)
∆VI
−
−
0.3
0.8
−
−
V
V
Buffered oscillator output (pin 14)
VO
DC output voltage
Output signal amplitude
(peak-to-peak value)
Output impedance
Vo(p-p)
ZO
−
−
−
320
170
−
−
−
3
mV
Ω
−IO(peak)
Output current (peak value)
mA
IF, AGC and AF stages
VI
Zi
Ci
DC input voltage (pins 3 and 4)
IF input impedance (pins 3 to 4)
IF input capacitance
−
2.0
3.0
7
−
V
2.4
−
3.9
−
kΩ
pF
IF input voltage for
THD = 3% at m = 80% (pins 3 and 4)
(RMS value)
ViIF(rms)
Zo
−
−
90
50
−
−
mV
IF output impedance (pin 12)
Unloaded IF output voltage
at Vi = 10 mV (pin 12)
Ω
VoIF(rms)
(RMS value)
180
230
68
290
mV
dB
Voltage gain before start of AGC
(pins 3 to 4; 6 to 20)
Gv
−
−
AGC range of IF stages: change of
V3-4 for 1 dB change of Vo(AF);
V3-4(ref) = 75 mV(rms)
∆Vv
−
55
−
dB
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL
PARAMETER
AF output voltage (RMS value)
at V3-4(IF) = 50 µV(rms)
MIN.
TYP.
MAX.
UNIT
VoAF(rms)
VoAF(rms)
Zo
−
−
130
−
−
mV
at V3-4(IF) = 1 mV(rms)
310
3.5
mV
kΩ
kΩ
AF output impedance (pin 6)
AF output impedance (pin 9)
2.8
4.2
Zo
12.4
15.5
18.6
Indicator driver (pin 13)
Output voltage at Vi = 0 mV(rms);
RL = 2.7 kΩ
Vo
−
−
140
mV
Output voltage at Vi = 500 mV(rms);
RL = 2.7 kΩ
Vo
RL
−Io
Zo
Vo
2.5
1.5
−
2.8
−
3.1
−
V
Load resistance
kΩ
mA
Ω
Output current at Vi = 500 mV(rms)
Output impedance at −Io = 0.5 mA
Reverse output voltage at AM off
−
2.0
−
−
220
6
−
−
V
Standby switch
Switching threshold at;
VP = 7.5 to 14 V
Tamb = −40 to + 80 °C
ON-voltage
V2-20
V2-20
−I2
0
−
2.0
20.0
200
10
V
OFF-voltage
3.5
−
−
V
ON-current at V2-20 = 0 V
OFF-current at V2-20 = 14 V
100
−
µA
µA
I2
−
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
OPERATING CHARACTERISTICS
VP = 8.5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified
SYMBOL PARAMETER MIN. TYP. MAX.
UNIT
RF sensitivity
RF input voltage
(RMS value)
ViRF(rms)
for (S + N)/N = 6 dB
for (S + N)/N = 26 dB
for (S + N)/N = 46 dB
at start of AGC
−
−
−
−
1.5
−
−
−
−
µV
ViRF(rms)
ViRF(rms)
ViRF(rms)
15
µV
µV
µV
150
30
RF large signal handling
RF input voltage
(RMS value)
ViRF(rms)
ViRF(rms)
ViRF(rms)
at THD = 3%; m = 80%
at THD = 3%; m = 30%
at THD = 10%; m = 30%
−
−
−
500
700
900
−
−
−
mV
mV
mV
AGC range
Change of Vi for 1 dB change
of VoAF; Vi(ref) = 500 mV(rms)
Change of Vi for 6 dB change
of VoAF; Vi(ref) = 500 mV(rms)
∆Vi
∆Vi
−
−
86
91
−
−
dB
dB
Output signal
(RMS value)
VoIF(rms)
IF output voltage at Vi = 2 mV(rms)
AF output voltage
180
230
290
mV
VoAF(rms)
VoAF(rms)
at Vi = 4 µV(rms); m = 80%
at Vi = 2 mV(rms)
−
130
310
−
mV
mV
240
390
Total harmonic distortion
THD
at Vi = 2 mV(rms); m = 30%
at Vi = 2 mV(rms); m = 80%
at Vi = 500 mV(rms); m = 30%
Signal-to-noise ratio at Vi = 100 mV(rms)
Supply voltage ripple rejection at Vi = 2 mV(rms)
VP = 100 mV(rms); fp = 100 Hz
(SVRR = 20 log [VP/VoAF])
−
−
−
−
0.5
1.0
1.0
58
−
−
−
−
%
%
%
dB
THD
THD
(S + N)/N
SVRR
SVRR
SVRR
−
−
−
38
0(1)
−
−
−
dB
dB
dB
(a) additional AF signal at IF output
(b) add modulation at IF output (mref = 30%)
40
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Unwanted signals
Suppression of IF whistles at
Vi = 15 µV; m = 0% related to AF signal
of m = 30%
α2IF
α3IF
at fi ≈ 2 × fIF
−
−
37
44
−
−
dB
at fi ≈ 3 × fIF
dB
IF suppression at RF input;
for symmetrical input
for asymmetrical input
Residual oscillator signal at mixer output;
at fosc
αIF
αIF
−
−
40
40
−
−
dB
dB
I1(osc)
−
−
1
−
−
µA
µA
I1(2osc)
at 2 × fosc
1.1
Note
1. AF signals at the IF output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection
in the demodulator.
Fig.4 Total harmonic distortion and (S + N)/N as
Fig.3 AF output as a function of RF input in the
circuit of Fig.1; fi = 1 MHz; fm = 400 Hz;
m = 30%.
functions of RF input in the circuit of Fig.1;
m = 30% for (S + N)/N curve and m = 80%
for THD curve.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.5 Total harmonic distortion as a function of modulation frequency at Vi = 5 mV; m = 80%; measured in
the circuit of Fig.1 with C7-20(ext) = 0 µF and 2.2 µF.
___________
with IF filter;
−
−
with AF filter;
− − − − − − with IF and AF filters.
Fig.6 Indicator driver voltage as a function of RF
input in the circuit of Fig.1.
Fig.7 Typical frequency response curves from
Fig.1 showing the effect of filtering.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.8 IF output voltage as a function of RF input in the circuit of Fig.1; fi = 1 MHz.
Fig.9 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in
Fig.10; centre frequency = 455 kHz.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
APPLICATION INFORMATION
Fig.10 IF filter variants applied to the circuit of Fig.1. For filter data, refer to Table 1.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.12 (S + N)/N as a function of input voltage; measured in the circuit of Fig.11 for AM stereo.
Fig.13 Total harmonic distortion (THD) as a function of input voltage; measured in the circuit of Fig.11 for AM
stereo.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
PACKAGE OUTLINE
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.01
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.42
0.39
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-01-24
SOT163-1
075E04
MS-013AC
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
May 1992
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Philips Semiconductors
Product specification
AM receiver
TDA1572T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
May 1992
20
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