TDA1572T [NXP]

AM receiver; AM接收器
TDA1572T
型号: TDA1572T
厂家: NXP    NXP
描述:

AM receiver
AM接收器

文件: 总20页 (文件大小:224K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA1572T  
AM receiver  
May 1992  
Product specification  
File under Integrated Circuits, IC01  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
GENERAL DESCRIPTION  
Features  
The TDA1572T integrated AM receiver circuit performs all  
the active functions and part of the filtering required of an  
AM radio receiver. It is intended for use in mains-fed home  
receivers and car radios. The circuit can be used for  
oscillator frequencies up to 50 MHz and can handle RF  
signals up to 500 mV.  
Inputs protected against damage by static discharge  
Gain-controlled RF stage  
Double balanced mixer  
Separately buffered, voltage-controlled and  
temperature-compensated oscillator, designed for  
simple coils  
RF radiation and sensitivity to interference are minimized  
by an almost symmetrical design. The controlled-voltage  
oscillator provides signals with extremely low distortion  
and high spectral purity over the whole frequency range,  
even when tuning with variable capacitance diodes. If  
required, band switching diodes can easily be applied.  
Selectivity is obtained using a block filter before the IF  
amplifier.  
Gain-controlled IF stage with wide AGC range  
Full-wave, balanced envelope detector  
Internal generation of AGC voltage with possibility of  
second-order filtering  
Buffered field strength indicator driver with short-circuit  
protection  
AF preamplifier with possibilities for simple AF filtering  
Electronic standby switch  
IF output for stereo demodulator and search tuning.  
QUICK REFERENCE DATA  
SYMBOL  
VP  
PARAMETER  
Supply voltage range  
CONDITIONS  
MIN.  
7.5  
TYP.  
8.5  
MAX.  
14.0  
UNIT  
V
IP  
Supply current range  
VP = 8.5 V  
15  
25  
28  
mA  
RF input voltage (RMS value)  
for (S + N)/N = 6 dB  
ViFR(rms)  
ViRF(rms)  
VoIF(rms)  
m = 30%  
1.5  
µV  
for THD = 3%  
m = 80%  
500  
230  
mV  
mV  
IF output voltage (RMS value)  
AF output voltage (RMS value)  
Vi = 2 mV(rms)  
Vi = 2 mV(rms);  
fi = 1 MHz; m = 30%;  
fm = 400 Hz  
180  
290  
VoAF(rms)  
240  
310  
86  
390  
mV  
dB  
V
AGC range  
Change of Vi for 1 dB  
change of VoAF  
Vi  
Indicator driver (pin 13)  
Output voltage  
Vi = 500 mV(rms);  
Vo  
RL = 2.7 kΩ  
2.5  
2.8  
3.1  
PACKAGE OUTLINE  
20-lead mini-pack; plastic (SO20; SOT163A); SOT163-1; 1996 August 13.  
May 1992  
2
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
May 1992  
3
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
PINNING  
1
2
3
4
5
6
7
8
9
MXO  
STB  
mixer output  
standby switch  
IF input 1  
IFI1  
IFI2  
IF input 2  
DET  
detector  
AFO1  
AGC1  
ACG2  
AFO2  
AF output 1  
AGC stage 1  
AGC stage 2  
AF output 2  
not connected  
not connected  
IF output  
10 n.c.  
11 n.c.  
12 IFO  
13 IND  
14 OSO  
15 OSC1  
16 OSC2  
17 VP  
indicator output  
buffered oscillator output  
oscillator 1  
oscillator 2  
supply voltage  
RF input 1  
18 RFI1  
19 RFI2  
20 GND  
RF input 2  
Fig.2 Pinning diagram.  
ground  
May 1992  
4
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
FUNCTIONAL DESCRIPTION  
Gain-controlled RF stage and mixer  
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.  
Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are  
handled with low distortion and the (S + N)/N ratio of small signals is improved. Low noise working is achieved in the  
differential amplifier by using transistors with low base resistance.  
A double balanced mixer provides the IF output signal to pin 1.  
Oscillator  
The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator  
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using  
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V15-20. An extra  
buffered oscillator output (pin 14) is available for driving a synthesizer. If this is not needed, resistor RL(14) can be omitted.  
Gain-controlled IF amplifier  
This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter.  
Both stages are gain-controlled by the AGC negative feedback network. The IF output is available at pin 12.  
Detector  
The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual IF carrier is  
blocked from the signal path by an internal low-pass filter.  
AF preamplifier  
This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series  
resistor which, together with an external capacitor, yields the required low-pass for AF filtering.  
AGC amplifier  
The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the  
AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives  
fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced  
by using capacitors of smaller value in the external filter (C16 and C17). The AGC voltage is fed to the RF and IF stages  
via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.  
Field strength indicator output  
A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input  
signals over the whole dynamic range. If the field strength information is not needed, RL(13) can be omitted.  
Standby switch  
This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and AF  
preamplifier are switched off.  
Short-circuit protection  
All pins have short-circuit protection to ground.  
May 1992  
5
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
RATINGS  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL  
PARAMETER  
Supply voltage (pin 17)  
MIN.  
MAX.  
16  
UNIT  
VP = V17-20  
|V18-19  
V
V
V
V
|
Input voltage  
12  
V18-19; V19-20  
0.6  
V18-19; V19-20  
VP  
I18 ; I20  
Ptot  
Input current (pins 18 and 20)  
Total power dissipation  
Storage temperature range  
Operating ambient temperature range  
Junction temperature  
Electrostatic handling(1)  
all pins except pins 3, 6, 9, 14  
pins 3, 6, 14  
200  
500  
+150  
+85  
+125  
mA  
mW  
°C  
Tstg  
55  
40  
Tamb  
Tj  
°C  
°C  
Ves  
Ves  
Ves  
2000  
1500  
1000  
+2000  
+2000  
+2000  
V
V
V
pin 9  
Note  
1. Equivalent to discharging a 100 pF capacitor through a 1.5 kseries resistor; (5 pulses, both polarities).  
THERMAL RESISTANCE  
From junction to ambient (in free air)  
Rth j-a (max.)  
=
95 K/W  
May 1992  
6
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
CHARACTERISTICS  
VP = V17-20 = 8.5 V; Tamb = 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all  
voltages referenced to ground; unless otherwise specified.  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
Supply  
VP  
IP  
Supply voltage (pin 17)  
Supply current (pin 17)  
7.5  
8.5  
14.0  
V
15  
25  
28  
mA  
RF stage and mixer (pins 18 and 19)  
VI  
Zi  
DC input voltage  
VP/2  
5.5  
25  
8
V
RF input impedance at VI < 300 µV (rms)  
RF input capacitance  
kΩ  
pF  
kΩ  
pF  
kΩ  
pF  
Ci  
Zi  
RF input impedance at VI > 10 mV (rms)  
RF input capacitance  
Ci  
Zo  
Co  
22  
IF output impedance (pin 1)  
IF output capacitance  
200  
6
Conversion transconductance  
before start of AGC  
I1/Vi  
6.5  
5
mA/V  
V
Maximum IF output voltage, inductive  
coupling to pin 1 (peak-to-peak value)  
DC value of output current;  
at VI = 0 V (pin 1)  
V1-17(p-p)  
IO  
1.2  
30  
mA  
dB  
AGC range of input stage  
RF signal handling capability  
Input voltage (RMS value)  
for THD = 3% at m = 80%  
Vi(rms)  
500  
mV  
May 1992  
7
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
Oscillator  
Frequency range  
fosc  
0.1  
60  
MHz  
Voltage amplitude (pins 15 to 16)  
(RMS value)  
V(rms)  
R(ext)  
80  
130  
150  
200  
mV  
External load impedance (pins 16 to 15)  
External load impedance for no  
oscillation (pins 16 to 15)  
Supply voltage ripple rejection  
at VP = 100 mV(rms); fp = 100 Hz  
(SVRR = 20 log [V17/V15])  
Source voltage for switching diodes  
(6 x VBE) (pin 15)  
0.5  
kΩ  
R(ext)  
60  
SVRR  
V15-20  
IO  
0
55  
4.2  
dB  
V
DC output current (for switching  
diodes) (pin 15)  
20  
mA  
Change of output voltage at  
I15 = 20 mA (switch to maximum load)  
(pin 15)  
VI  
0.3  
0.8  
V
V
Buffered oscillator output (pin 14)  
VO  
DC output voltage  
Output signal amplitude  
(peak-to-peak value)  
Output impedance  
Vo(p-p)  
ZO  
320  
170  
3
mV  
IO(peak)  
Output current (peak value)  
mA  
IF, AGC and AF stages  
VI  
Zi  
Ci  
DC input voltage (pins 3 and 4)  
IF input impedance (pins 3 to 4)  
IF input capacitance  
2.0  
3.0  
7
V
2.4  
3.9  
kΩ  
pF  
IF input voltage for  
THD = 3% at m = 80% (pins 3 and 4)  
(RMS value)  
ViIF(rms)  
Zo  
90  
50  
mV  
IF output impedance (pin 12)  
Unloaded IF output voltage  
at Vi = 10 mV (pin 12)  
VoIF(rms)  
(RMS value)  
180  
230  
68  
290  
mV  
dB  
Voltage gain before start of AGC  
(pins 3 to 4; 6 to 20)  
Gv  
AGC range of IF stages: change of  
V3-4 for 1 dB change of Vo(AF);  
V3-4(ref) = 75 mV(rms)  
Vv  
55  
dB  
May 1992  
8
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
SYMBOL  
PARAMETER  
AF output voltage (RMS value)  
at V3-4(IF) = 50 µV(rms)  
MIN.  
TYP.  
MAX.  
UNIT  
VoAF(rms)  
VoAF(rms)  
Zo  
130  
mV  
at V3-4(IF) = 1 mV(rms)  
310  
3.5  
mV  
kΩ  
kΩ  
AF output impedance (pin 6)  
AF output impedance (pin 9)  
2.8  
4.2  
Zo  
12.4  
15.5  
18.6  
Indicator driver (pin 13)  
Output voltage at Vi = 0 mV(rms);  
RL = 2.7 kΩ  
Vo  
140  
mV  
Output voltage at Vi = 500 mV(rms);  
RL = 2.7 kΩ  
Vo  
RL  
Io  
Zo  
Vo  
2.5  
1.5  
2.8  
3.1  
V
Load resistance  
kΩ  
mA  
Output current at Vi = 500 mV(rms)  
Output impedance at Io = 0.5 mA  
Reverse output voltage at AM off  
2.0  
220  
6
V
Standby switch  
Switching threshold at;  
VP = 7.5 to 14 V  
Tamb = 40 to + 80 °C  
ON-voltage  
V2-20  
V2-20  
I2  
0
2.0  
20.0  
200  
10  
V
OFF-voltage  
3.5  
V
ON-current at V2-20 = 0 V  
OFF-current at V2-20 = 14 V  
100  
µA  
µA  
I2  
May 1992  
9
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
OPERATING CHARACTERISTICS  
VP = 8.5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified  
SYMBOL PARAMETER MIN. TYP. MAX.  
UNIT  
RF sensitivity  
RF input voltage  
(RMS value)  
ViRF(rms)  
for (S + N)/N = 6 dB  
for (S + N)/N = 26 dB  
for (S + N)/N = 46 dB  
at start of AGC  
1.5  
µV  
ViRF(rms)  
ViRF(rms)  
ViRF(rms)  
15  
µV  
µV  
µV  
150  
30  
RF large signal handling  
RF input voltage  
(RMS value)  
ViRF(rms)  
ViRF(rms)  
ViRF(rms)  
at THD = 3%; m = 80%  
at THD = 3%; m = 30%  
at THD = 10%; m = 30%  
500  
700  
900  
mV  
mV  
mV  
AGC range  
Change of Vi for 1 dB change  
of VoAF; Vi(ref) = 500 mV(rms)  
Change of Vi for 6 dB change  
of VoAF; Vi(ref) = 500 mV(rms)  
Vi  
Vi  
86  
91  
dB  
dB  
Output signal  
(RMS value)  
VoIF(rms)  
IF output voltage at Vi = 2 mV(rms)  
AF output voltage  
180  
230  
290  
mV  
VoAF(rms)  
VoAF(rms)  
at Vi = 4 µV(rms); m = 80%  
at Vi = 2 mV(rms)  
130  
310  
mV  
mV  
240  
390  
Total harmonic distortion  
THD  
at Vi = 2 mV(rms); m = 30%  
at Vi = 2 mV(rms); m = 80%  
at Vi = 500 mV(rms); m = 30%  
Signal-to-noise ratio at Vi = 100 mV(rms)  
Supply voltage ripple rejection at Vi = 2 mV(rms)  
VP = 100 mV(rms); fp = 100 Hz  
(SVRR = 20 log [VP/VoAF])  
0.5  
1.0  
1.0  
58  
%
%
%
dB  
THD  
THD  
(S + N)/N  
SVRR  
SVRR  
SVRR  
38  
0(1)  
dB  
dB  
dB  
(a) additional AF signal at IF output  
(b) add modulation at IF output (mref = 30%)  
40  
May 1992  
10  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
Unwanted signals  
Suppression of IF whistles at  
Vi = 15 µV; m = 0% related to AF signal  
of m = 30%  
α2IF  
α3IF  
at fi 2 × fIF  
37  
44  
dB  
at fi 3 × fIF  
dB  
IF suppression at RF input;  
for symmetrical input  
for asymmetrical input  
Residual oscillator signal at mixer output;  
at fosc  
αIF  
αIF  
40  
40  
dB  
dB  
I1(osc)  
1
µA  
µA  
I1(2osc)  
at 2 × fosc  
1.1  
Note  
1. AF signals at the IF output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection  
in the demodulator.  
Fig.4 Total harmonic distortion and (S + N)/N as  
Fig.3 AF output as a function of RF input in the  
circuit of Fig.1; fi = 1 MHz; fm = 400 Hz;  
m = 30%.  
functions of RF input in the circuit of Fig.1;  
m = 30% for (S + N)/N curve and m = 80%  
for THD curve.  
May 1992  
11  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
Fig.5 Total harmonic distortion as a function of modulation frequency at Vi = 5 mV; m = 80%; measured in  
the circuit of Fig.1 with C7-20(ext) = 0 µF and 2.2 µF.  
___________  
with IF filter;  
with AF filter;  
− − − − − − with IF and AF filters.  
Fig.6 Indicator driver voltage as a function of RF  
input in the circuit of Fig.1.  
Fig.7 Typical frequency response curves from  
Fig.1 showing the effect of filtering.  
May 1992  
12  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
Fig.8 IF output voltage as a function of RF input in the circuit of Fig.1; fi = 1 MHz.  
Fig.9 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in  
Fig.10; centre frequency = 455 kHz.  
May 1992  
13  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
APPLICATION INFORMATION  
Fig.10 IF filter variants applied to the circuit of Fig.1. For filter data, refer to Table 1.  
May 1992  
14  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
May 1992  
15  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
Fig.12 (S + N)/N as a function of input voltage; measured in the circuit of Fig.11 for AM stereo.  
Fig.13 Total harmonic distortion (THD) as a function of input voltage; measured in the circuit of Fig.11 for AM  
stereo.  
May 1992  
16  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
May 1992  
17  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
PACKAGE OUTLINE  
SO20: plastic small outline package; 20 leads; body width 7.5 mm  
SOT163-1  
D
E
A
X
c
y
H
E
v
M
A
Z
20  
11  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
10  
w
detail X  
e
M
b
p
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
max.  
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30  
0.10  
2.45  
2.25  
0.49  
0.36  
0.32  
0.23  
13.0  
12.6  
7.6  
7.4  
10.65  
10.00  
1.1  
0.4  
1.1  
1.0  
0.9  
0.4  
mm  
2.65  
0.25  
0.01  
1.27  
0.050  
1.4  
0.25 0.25  
0.01  
0.1  
8o  
0o  
0.012 0.096  
0.004 0.089  
0.019 0.013 0.51  
0.014 0.009 0.49  
0.30  
0.29  
0.42  
0.39  
0.043 0.043  
0.016 0.039  
0.035  
0.016  
inches 0.10  
0.055  
0.01 0.004  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-01-24  
SOT163-1  
075E04  
MS-013AC  
May 1992  
18  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
SOLDERING  
Introduction  
Wave soldering  
Wave soldering techniques can be used for all SO  
packages if the following conditions are observed:  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave) soldering  
technique should be used.  
The longitudinal axis of the package footprint must be  
parallel to the solder flow.  
The package footprint must incorporate solder thieves at  
the downstream end.  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
Reflow soldering  
Reflow soldering techniques are suitable for all SO  
packages.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
Repairing soldered joints  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
May 1992  
19  
Philips Semiconductors  
Product specification  
AM receiver  
TDA1572T  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
May 1992  
20  

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IC 1-BAND, AUDIO TUNER, PDSO20, Tuner IC
NXP

TDA1575

FM front end circuit for CENELEC EN 55020 applications
NXP

TDA1575T

FM front end circuit for CENELEC EN 55020 applications
NXP

TDA1575T/V2,112

IC 1-BAND, AUDIO TUNER, PDSO16, Tuner IC
NXP