TDA7010 [NXP]
FM radio circuit; FM收音电路
| 型号： | TDA7010 |
| 厂家： | 
NXP |
| 描述： | FM radio circuit |
| 文件： | 总11页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA7010T
FM radio circuit
September 1983
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
GENERAL DESCRIPTION
The TDA7010T is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral
components is important (small dimensions and low costs).
The IC has an FLL (Frequency-Locked-Loop) system with an intermediate frequency of 70 kHz. The i.f. selectivity is
obtained by active RC filters. The only function which needs alignment is the resonant circuit for the oscillator, thus
selecting the reception frequency. Spurious reception is avoided by means of a mute circuit, which also eliminates too
noisy input signals. Special precautions are taken to meet the radiation requirements.
The TDA7010T includes the following functions:
• R.F. input stage
• Mixer
• Local oscillator
• I.F. amplifier/limiter
• Phase demodulator
• Mute detector
• Mute switch
QUICK REFERENCE DATA
Supply voltage range (pin 4)
V
2,7 to 10 V
typ. 8 mA
P
Supply current at V = 4,5 V
I
f
P
P
R.F. input frequency range
Sensitivity for −3 dB limiting
(e.m.f. voltage)
1,5 to 110 MHz
rf
(source impedance: 75 Ω; mute disabled)
Signal handling (e.m.f. voltage)
(source impedance: 75 Ω)
EMF
EMF
typ. 1,5 µV
typ. 200 mV
A.F. output voltage at R = 22 kΩ
V
typ.
75 mV
L
o
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 24.
September 1983
2
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
Fig.1 Block diagram.
3
September 1983
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage (pin 4)
V
V
max.
12 V
P
Oscillator voltage (pin 5)
V −0,5 to V + 0,5 V
P P
6-5
Total power dissipation
see derating curve Fig.2
Storage temperature range
Operating ambient temperature range
T
T
−55 to + 150 °C
0 to + 60 °C
stg
amb
Fig.2 Power derating curve.
D.C. CHARACTERISTICS
V = 4,5 V; T
25 °C; measured in Fig.4; unless otherwise specified
amb
P
PARAMETER
SYMBOL
MIN.
2,7
TYP.
4,5
MAX.
10
UNIT
Supply voltage (pin 4)
Supply current
V
V
P
at V = 4,5 V
I
I
−
−
−
−
−
8
−
−
−
−
−
mA
µA
V
P
P
Oscillator current (pin 5)
Voltage at pin 12
280
1,35
60
5
V
12-14
Output current at pin 2
I
µA
V
2
Voltage at pin 2; R = 22 kΩ
V
1,3
L
2-14
September 1983
4
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
A.C. CHARACTERISTICS
V = 4,5 V; T
= 25 °C; measured in Fig.4 (mute switch open, enabled); f = 96 MHz (tuned to max. signal at 5 µV
rf
p
amb
e.m.f.) modulated with ∆f = ±22,5 kHz; f = 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of 75 Ω); r.m.s.
m
noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified.
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Sensitivity (see Fig.3)
(e.m.f. voltage)
for −3 dB limiting;
muting disabled
for −3 dB muting
for S/N = 26 dB
EMF
−
−
−
1,5
−
−
−
µV
EMF
EMF
6
µV
µV
5,5
Signal handling (e.m.f. voltage)
for THD < 10%; ∆f = ± 75 kHz
Signal-to-noise ratio
EMF
S/N
−
−
200
60
−
−
mV
dB
Total harmonic distortion
at ∆f = ± 22,5 kHz
THD
THD
−
−
0,7
2,3
−
−
%
%
at ∆f = ± 75 kHz
AM suppression of output voltage
(ratio of the AM output signal
referred to the FM output signal)
FM signal: f = 1 kHz; ∆f = ± 75 kHz
m
AM signal: f = 1 kHz; m = 80%
AMS
RR
−
−
−
50
−
−
−
dB
dB
mV
m
Ripple rejection (∆V = 100 mV; f = 1 kHz)
10
P
Oscillator voltage (r.m.s. value) at pin 5
Variation of oscillator frequency
V
250
5-4(rms)
with supply voltage (∆V = 1 V)
∆f
−
−
−
−
60
−
−
−
−
kHz/V
dB
P
osc
Selectivity
S
S
43
+300
−300
28
dB
A.F.C. range
∆f
± 300
kHz
rf
Audio bandwidth at ∆V = 3 dB
o
measured with pre-emphasis (t = 50 µs)
B
−
−
10
75
−
−
kHz
mV
A.F. output voltage (r.m.s. value)
at R = 22 kΩ
V
o(rms)
L
Load resistance
at V = 4,5 V
R
R
−
−
−
−
22
47
kΩ
kΩ
P
L
at V = 9,0 V
P
L
September 1983
5
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
Fig.3 A.F. output voltage (V ) and total harmonic distortion (THD) as a function of the e.m.f. input voltage (EMF)
o
with a source impedance (R ) of 75 Ω: (1) muting system enabled; (2) muting system disabled.
S
Conditions:
0 dB = 75 mV; f = 96 MHz.
rf
for S + N curve: ∆f = ±22,5 kHz; f = 1 kHz.
m
for THD curve: ∆f = ±75 kHz; f = 1 kHz.
m
Note
1. The muting system can be disabled by feeding a current of about 20 µA into pin 1.
September 1983
6
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
Fig.4 Test circuit; for printed-circuit boards see Figs 5 and 6.
7
September 1983
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
Fig.5 Track side of printed-circuit board used for the circuit of Fig.4.
Fig.6 Component side of printed-circuit board showing component layout used for the circuit of Fig.4.
September 1983
8
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
D
E
A
X
c
y
H
v
M
A
E
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
e
w
M
detail X
b
p
0
2.5
scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.39
0.014 0.0075 0.38
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.020
0.028
0.012
inches
0.069
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-23
97-05-22
SOT109-1
076E07S
MS-012AC
September 1983
9
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
September 1983
10
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1983
11
相关型号：
TDA7040T/V2,112
IC SPECIALTY CONSUMER CIRCUIT, PDSO8, PLASTIC, SOT-96A, SOP-8, Consumer IC:Other
NXP
©2020 ICPDF网 联系我们和版权申明