TDA8011T [NXP]
IF amplifier for satellite TV receivers; IF放大器器卫星电视接收器
| 型号： | TDA8011T |
| 厂家： | 
NXP |
| 描述： | IF amplifier for satellite TV receivers |
| 文件： | 总12页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8011T
IF amplifier for satellite TV receivers
February 1995
Product specification
File under Integrated Circuits, IC02
Philips Semiconductors
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
FEATURES
DESCRIPTION
• High voltage gain, up to 860 MHz
• Low noise
The TDA8011T is a broadband low-noise AGC amplifier
which is used for the second IF amplifier in satellite TV
receivers. The amplifier is powered from a single 5 V
supply. The amplifier gain can be easily controlled over a
large dynamic range by using a single ground reference
voltage. The two outputs are 180° out of phase and are
separately buffered. The two outputs can therefore, be
used in either the differential or asymmetrical mode.
• Large dynamic gain control
• High impedance differential input stage
• Low output impedance.
APPLICATIONS
• Second IF amplifier for satellite TV receivers.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
4.5
TYP.
5.0
MAX. UNIT
5.5
45
96
85
−
V
ICC
supply current
VCC = 5 V; Tamb = 25 °C; IAGC = 0 mA
27
−
35
−
mA
dBµV
dBµV
dB
Vi
input voltage level
output voltage level
maximum voltage gain
minimum voltagegain
Vo
−
−
Gv(max)
Gv(min)
25
−
−
−
−21
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8011T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
February 1995
2
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
BLOCK DIAGRAM
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
supply voltage
VCC
1
2
3
4
5
6
7
8
IFI1
IF input 1
IF input 2
supply voltage
IF output 1
AGC input
ground
IFI2
VCC
IFO1
AGC
GND
IFO2
Fig.2 Pin configuration.
IF output 2
February 1995
3
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
MIN.
MAX.
UNIT
supply voltage
−0.3
−0.3
−
6.0
V
V(max)
Isource(max)
tsc(max)
Tstg
maximum voltage on all pins
maximum output source current
maximum short-circuit time on outputs
storage temperature
VCC
10
V
mA
s
−
10
−55
−
+150
+150
+80
°C
°C
°C
Tj
junction temperature
Tamb
operating ambient temperature
−10
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
160
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
K/W
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe it is
desirable to take normal precautions appropriate to handling MOS devices.
CHARACTERISTICS
VCC = 5 V; fi = 70, 480 and 610 MHz; Tamb = 25 °C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICC
supply current
27
35
45
mA
IF amplifier
Gv(max)
Gv(min)
∆G
maximum voltage gain
minimum voltage gain
tilt
VAGC = 0.9VCC; note 1
VAGC = 0.1VCC; note 1
∆fi = 20 MHz; note 2
25
−
−
−
dB
−
−21
−
dB
−
0.4
−
dB
Vi
input voltage level
DC input voltage level
output voltage level
DC output voltage level
noise figure
−
96
−
dBµV
V
VI(DC)
Vo
−
2.5
−
−
85
−
dBµV
V
VO(DC)
F
−
2.2
−
unmatchedconfiguration;
note 3
−
15
dB
F(min)
IM3
minimum noise figure
note 4
note 5
−
−
−
11
dB
dB
third-order intermodulation
distance
40
−
Ri(diff)
Ci(diff)
Ro(SE)
differential input resistance
differential input capacitance
single-ended output resistance
note 6
note 6
−
−
−
4
−
−
−
kΩ
pF
Ω
0.75
50
February 1995
4
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gain control
VAGC
AGC input voltage
G ≤ Gv(min)
G ≥ Gv(max)
0.1VCC
−
−
−
V
V
−
−
−
0.9VCC
RAGC1
RAGC2
AGC resistor 1
AGC resistor 2
4.3
−
−
kΩ
kΩ
110
Notes
1. The voltage gain Gv is defined as the ratio between the single-ended output voltage and the differential input voltage
VIFO
with a 150 Ω output load: G = 20 × log
-----------
Vi
2. The tilt is defined as the maximum absolute difference between the gain at the frequency fo = 480 MHz and the gain
at the frequency fo = 480 MHz ±20 MHz. Where ∆Gv = max G(fo ±∆f) − G(fo)
3. The unmatched noise figure (F) is measured at fi = 480 MHz in the application circuit (see Fig.6). With the hybrid
coupler used, the equivalent source impedance is equal to 100 Ω.
4. The minimum noise figure [F(min)] is measured at fi = 480 MHz with the input matching circuit shown in Fig.3;
(L1: 4.5 turns on, Φint = 3 mm, wire = 0.4 mm; L2: 11 turns on, Φint = 3 mm, wire = 0.4 mm).
5. The third-order intermodulation distance (IM3) is measured with an AGC voltage set to obtain a gain of −17 dB. The
input signal applied to the amplifier consists of two sine wave signals at fi = 479.5 MHz and fi = 480.5 MHz with an
amplitude equal to 90 dBµV for each tone.
6. The differential input impedance is represented by an equivalent parallel resistance and capacitance as shown in
Fig.1. The specified values are measured at fi = 480 MHz.
Fig.3 Input matching circuit.
February 1995
5
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
Fig.4 Typical frequency response curve.
Fig.5 Typical gain control response curve.
6
February 1995
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
APPLICATION INFORMATION
Fig.6 Application circuit.
February 1995
7
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
February 1995
8
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
applied to the substrate by screen printing, stencilling or
pressure-syringe dispensing before device placement.
SOLDERING
Plastic small-outline packages
BY WAVE
Several techniques exist for reflowing; for example,
thermal conduction by heated belt, infrared, and
vapour-phase reflow. Dwell times vary between 50 and
300 s according to method. Typical reflow temperatures
range from 215 to 250 °C.
During placement and before soldering, the component
must be fixed with a droplet of adhesive. After curing the
adhesive, the component can be soldered. The adhesive
can be applied by screen printing, pin transfer or syringe
dispensing.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 min at 45 °C.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder bath is
10 s, if allowed to cool to less than 150 °C within 6 s.
Typical dwell time is 4 s at 250 °C.
REPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING
IRON OR PULSE-HEATED SOLDER TOOL)
Fix the component by first soldering two, diagonally
opposite, end pins. Apply the heating tool to the flat part of
the pin only. Contact time must be limited to 10 s at up to
300 °C. When using proper tools, all other pins can be
soldered in one operation within 2 to 5 s at between 270
and 320 °C. (Pulse-heated soldering is not recommended
for SO packages.)
A modified wave soldering technique is recommended
using two solder waves (dual-wave), in which a turbulent
wave with high upward pressure is followed by a smooth
laminar wave. Using a mildly-activated flux eliminates the
need for removal of corrosive residues in most
applications.
For pulse-heated solder tool (resistance) soldering of VSO
packages, solder is applied to the substrate by dipping or
by an extra thick tin/lead plating before package
placement.
BY SOLDER PASTE REFLOW
Reflow soldering requires the solder paste (a suspension
of fine solder particles, flux and binding agent) to be
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
February 1995
9
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
NOTES
February 1995
10
Philips Semiconductors
Product specification
IF amplifier for satellite TV receivers
TDA8011T
NOTES
February 1995
11
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533061/1500/01/pp12
Date of release: February 1995
9397 746 70011
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Document order number:
Philips Semiconductors
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