TDA8541 [NXP]

1 W BTL audio amplifier; 1 W BTL音频放大器器
TDA8541
型号: TDA8541
厂家: NXP    NXP
描述:

1 W BTL audio amplifier
1 W BTL音频放大器器

商用集成电路 音频放大器 光电二极管
文件: 总20页 (文件大小:194K)
中文:  中文翻译
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA8541  
1 W BTL audio amplifier  
1998 Apr 01  
Product specification  
Supersedes data of 1997 Feb 19  
File under Integrated Circuits, IC01  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
FEATURES  
GENERAL DESCRIPTION  
Flexibility in use  
The TDA8541(T) is a one channel audio power amplifier  
for an output power of 1 W with an 8 load at a 5 V  
supply. The circuit contains a BTL amplifier with a  
complementary PNP-NPN output stage and standby/mute  
logic. The TDA8541T comes in an 8 pin SO package and  
the TDA8541 in an 8 pin DIP package.  
Few external components  
Low saturation voltage of output stage  
Gain can be fixed with external resistors  
Standby mode controlled by CMOS compatible levels  
Low standby current  
APPLICATIONS  
No switch-on/switch-off plops  
Portable consumer products  
Personal computers  
Telephony.  
High supply voltage ripple rejection  
Protected against electrostatic discharge  
Outputs short-circuit safe to ground, VCC and across the  
load  
Thermally protected.  
QUICK REFERENCE DATA  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.2  
TYP. MAX. UNIT  
5
18  
12  
10  
V
Iq  
quiescent current  
VCC = 5 V  
8
mA  
µA  
W
Istb  
standby current  
Po  
output power  
THD = 10%; RL = 8 ; VCC = 5 V  
1
1.2  
0.15  
THD  
SVRR  
total harmonic distortion  
supply voltage ripple rejection  
Po = 0.5 W  
%
50  
dB  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TDA8541T  
TDA8541  
SO8  
plastic small outline package; 8 leads; body width 3.9 mm  
plastic dual in-line package; 8 leads (300 mil)  
SOT96-1  
SOT97-1  
DIP8  
1998 Apr 01  
2
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
BLOCK DIAGRAM  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
MODE  
1
operating mode select  
(standby, mute, operating)  
handbook, halfpage  
SVR  
2
half supply voltage, decoupling  
ripple rejection  
TDA8541  
5
4
OUT  
IN−  
IN+  
3
4
5
6
7
8
positive input  
3
IN+  
+
IN−  
negative input  
R
6
OUT−  
VCC  
negative loudspeaker terminal  
supply voltage  
V
R
CC  
GND  
OUT+  
ground  
+
positive loudspeaker terminal  
8
20 kΩ  
OUT+  
2
1
SVR  
20 kΩ  
handbook, halfpage  
MODE  
1
2
3
4
8
7
6
5
OUT+  
SVR  
IN+  
GND  
MODE  
STANDBY/MUTE LOGIC  
TDA8541  
7
V
CC  
GND  
OUT−  
IN−  
MGB972  
MGB971  
Fig.2 Pin configuration.  
Fig.1 Block diagram.  
FUNCTIONAL DESCRIPTION  
Mode select pin  
The TDA8541(T) is a BTL audio power amplifier capable  
of delivering 1 W output power to an 8 load at  
THD = 10% using a 5 V power supply. Using the MODE  
pin the device can be switched to standby and mute  
condition. The device is protected by an internal thermal  
shutdown protection mechanism. The gain can be set  
within a range from 6 dB to 30 dB by external feedback  
resistors.  
The device is in standby mode (with a very low current  
consumption) if the voltage at the MODE pin is  
>(VCC 0.5 V), or if this pin is floating. At a MODE voltage  
level of less than 0.5 V the amplifier is fully operational.  
In the range between 1.5 V and VCC 1.5 V the amplifier  
is in mute condition. The mute condition is useful to  
suppress plop noise at the output, caused by charging of  
the input capacitor.  
Power amplifier  
The power amplifier is a Bridge Tied Load (BTL) amplifier  
with a complementary PNP-NPN output stage.  
The voltage loss on the positive supply line is the  
saturation voltage of a PNP power transistor, on the  
negative side the saturation voltage of an NPN power  
transistor. The total voltage loss is <1 V and with a 5 V  
supply voltage and an 8 loudspeaker an output power of  
1 W can be delivered.  
1998 Apr 01  
3
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.3  
MAX.  
+18  
UNIT  
operating  
V
VI  
input voltage  
0.3  
VCC + 0.3  
1
V
IORM  
Tstg  
Tamb  
Vpsc  
Ptot  
repetitive peak output current  
storage temperature  
A
non-operating  
55  
40  
+150  
+85  
10  
°C  
°C  
V
operating ambient temperature  
AC and DC short-circuit safe voltage  
total power dissipation  
SO8  
0.8  
W
W
DIP8  
1.2  
QUALITY SPECIFICATION  
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference  
Handbook”. The handbook can be ordered using the code 9397 750 00192.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
in free air  
VALUE  
UNIT  
thermal resistance from junction to ambient  
TDA8541T (SO8)  
160  
100  
K/W  
K/W  
TDA8541 (DIP8)  
DC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 ; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.2  
TYP.  
MAX.  
18  
UNIT  
operating  
5
8
V
Iq  
quiescent current  
standby current  
DC output voltage  
RL = ; note 1  
VMODE = VCC  
note 2  
12  
10  
mA  
µA  
V
Istb  
VO  
2.2  
VOUT+ VOUTdifferential output voltage offset  
50  
500  
0.5  
mV  
nA  
V
IIN+, IIN−  
input bias current  
VMODE  
input voltage mode select  
operating  
mute  
0
1.5  
VCC 1.5 V  
standby  
V
CC 0.5 −  
VCC  
20  
V
IMODE  
input current mode select  
0 < VMODE < VCC  
µA  
Notes  
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal  
to the DC output offset voltage divided by RL.  
2. The DC output voltage with respect to ground is approximately 0.5 × VCC  
.
1998 Apr 01  
4
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
AC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 ; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL  
PARAMETER  
output power  
CONDITIONS  
MIN.  
TYP.  
1.2  
MAX.  
UNIT  
Po  
THD = 10%  
THD = 0.5%  
Po = 0.5 W  
note 1  
1
W
W
%
0.6  
0.9  
0.15  
THD  
Gv  
total harmonic distortion  
closed loop voltage gain  
differential input impedance  
noise output voltage  
0.3  
30  
6
dB  
kΩ  
µV  
dB  
dB  
µV  
Zi  
100  
Vno  
note 2  
note 3  
note 4  
note 5  
100  
SVRR  
supply voltage ripple rejection  
50  
40  
Vo  
output voltage in mute condition  
200  
Notes  
1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.  
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a  
source impedance of RS = 0 at the input.  
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.  
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to  
the positive supply rail.  
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.  
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),  
which is applied to the positive supply rail.  
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including  
noise.  
1998 Apr 01  
5
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
TEST AND APPLICATION INFORMATION  
Test conditions  
SE application  
Tamb = 25 °C if not specially mentioned, VCC = 7.5 V,  
f = 1 kHz, RL = 4 , Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
Because the application can be either Bridge-Tied Load  
(BTL) or Single-Ended (SE), the curves of each application  
are shown separately.  
The SE application diagram is shown in Fig.13.  
The capacitor value of C3 in combination with the load  
impedance determines the low frequency behaviour.  
The total harmonic distortion as a function of frequency  
was measured with low-pass filter of 80 kHz. The value of  
capacitor C2 influences the behaviour of the SVRR at low  
frequencies, increasing the value of C2 increases the  
performance of the SVRR.  
The thermal resistance = 100 K/W for the DIP8 envelope;  
the maximum sine wave power dissipation for  
Tamb = 25 °C is:  
150 25  
----------------------  
100  
= 1.25 W .  
For Tamb = 60 °C the maximum total power dissipation is:  
150 60  
= 0.9 W .  
----------------------  
100  
General remark  
The frequency characteristic can be adapted by  
connecting a small capacitor across the feedback resistor.  
To improve the immunity of HF radiation in radio circuit  
applications, a small capacitor can be connected in  
parallel with the feedback resistor (56 k); this creates a  
low-pass filter.  
BTL application  
Tamb = 25 °C if not specially mentioned, VCC = 5 V,  
f = 1 kHz, RL = 8 , Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
The BTL application diagram is shown in Fig.3.  
The quiescent current has been measured without any  
load impedance. The total harmonic distortion as a  
function of frequency was measured with a low-pass filter  
of 80 kHz. The value of capacitor C2 influences the  
behaviour of the SVRR at low frequencies, increasing the  
value of C2 increases the performance of the SVRR.  
The figure of the mode select voltage (Vms) as a function  
of the supply voltage shows three areas; operating, mute  
and standby. It shows, that the DC-switching levels of the  
mute and standby respectively depends on the supply  
voltage level.  
1998 Apr 01  
6
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
BTL APPLICATION  
V
CC  
R2  
R1  
56 kΩ  
100 nF  
100 µF  
6
C1  
+
IN  
4
3
2
1
+
OUT  
OUT  
5
8
11 kΩ  
1 µF  
IN  
R
V
TDA8541  
L
SVR  
in  
MODE  
C2  
47 µF  
7
GND  
MBH881  
R2  
Gain = 2 × -------  
R1  
Fig.3 BTL application.  
MGD876  
MGD877  
10  
15  
handbook, halfpage  
handbook, halfpage  
I
q
THD  
(%)  
(mA)  
(1)  
(2)  
10  
1
1  
5
10  
2  
0
0
10  
2  
1  
4
8
12  
16  
20  
(V)  
10  
10  
1
10  
P
(W)  
V
o
CC  
f = 1 kHz, Gv = 20 dB.  
(1) CC = 5 V, RL = 8 .  
(2) VCC = 9 V, RL = 16 .  
V
RL = .  
Fig.4 Iq as a function of VCC  
.
Fig.5 THD as a function of Po.  
1998 Apr 01  
7
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD878  
MGD879  
10  
20  
handbook, halfpage  
handbook, halfpage  
SVRR  
(dB)  
THD  
(%)  
40  
60  
1
(1)  
(1)  
(2)  
(2)  
(3)  
1  
10  
10  
2  
80  
2
3
5
4
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
f (Hz)  
f (Hz)  
VCC = 5 V, 8 , Rs = 0 , Vi = 100 mV.  
(1) Gv = 30 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) CC = 5 V, RL = 8 .  
(2) VCC = 9 V, RL = 16 .  
(2) Gv = 20 dB.  
V
(3) Gv = 6 dB.  
Fig.6 THD as a function of frequency.  
Fig.7 SVRR as a function of frequency.  
MGD880  
MGD881  
2.5  
2
handbook, halfpage  
handbook, halfpage  
P
o
P
(W)  
2
(W)  
1.5  
1
(1)  
(2)  
1.5  
1
(1)  
(2)  
0.5  
0.5  
0
0
0
0
4
8
12  
4
8
12  
V
(V)  
V
(V)  
CC  
CC  
(1) RL = 8 .  
(2) RL = 16 .  
THD = 10%.  
(1)  
RL = 8 .  
(2) RL = 16 .  
Fig.9 Worst case power dissipation as a function  
of VCC  
Fig.8 Po as a function of VCC  
.
.
1998 Apr 01  
8
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD882  
MGD883  
1.6  
10  
o
handbook, halfpage  
handbook, halfpage  
V
P
(V)  
1
(1)  
(W)  
1.2  
1  
10  
2  
10  
(1)  
(2) (3)  
(2)  
0.8  
0.4  
0
3  
10  
4  
10  
5  
10  
6  
10  
1  
2
10  
1
10  
10  
0
0.5  
1
1.5  
2
2.5  
V
(V)  
P
(W)  
ms  
o
Band-pass = 22 Hz to 22 kHz.  
(1) VCC = 3 V.  
Sine wave of 1 kHz.  
(1) CC = 9 V, RL = 16 .  
(2) VCC = 5 V, RL = 8 .  
(2) VCC = 5 V.  
V
(3) VCC = 12 V.  
Fig.10 P as a function of Po.  
Fig.11 Vo as a function of Vms.  
MGL070  
16  
handbook, halfpage  
V
ms  
(V)  
12  
standby  
8
4
mute  
operating  
12 16  
0
0
4
8
V
(V)  
P
Fig.12 Vms as a function of VP.  
1998 Apr 01  
9
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
SE APPLICATION  
V
CC  
100 µF  
R2  
R1  
110 kΩ  
100 nF  
C3  
6
C1  
+
IN  
4
3
2
1
11 kΩ  
1 µF  
+
OUT  
OUT  
IN  
5
8
V
TDA8541  
SVR  
470 µF  
in  
R
L
MODE  
C2  
47 µF  
7
GND  
MBH882  
R2  
-------  
R1  
Gain =  
Fig.13 SE application.  
MGD885  
MGD884  
10  
10  
handbook, halfpage  
handbook, halfpage  
THD  
(%)  
THD  
(%)  
1
1
(1)  
(1)  
(2)  
(3)  
1  
1  
10  
10  
(2)  
(3)  
2  
2  
10  
10  
2  
1  
2
3
4
5
10  
10  
1
10  
10  
10  
10  
10  
10  
f (Hz)  
P
(W)  
o
f = 1 kHz, Gv = 20 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 9 V, RL = 8 .  
(3) VCC = 12 V, RL = 16 Ω.  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 9 V, RL = 8 .  
(3) VCC = 12 V, RL = 16 .  
Fig.14 THD as a function of Po.  
Fig.15 THD as a function of frequency.  
1998 Apr 01  
10  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD887  
MGD886  
20  
2
handbook, halfpage  
handbook, halfpage  
P
o
(W)  
1.6  
SVRR  
(dB)  
40  
(3)  
(1)  
(2)  
1.2  
0.8  
(1)  
(2)  
60  
(3)  
0.4  
80  
0
0
2
3
4
5
10  
10  
10  
10  
10  
4
8
12  
16  
f (Hz)  
V
(V)  
CC  
VCC = 7.5 V, RL = 4 , Rs = 0 , Vi = 100mV.  
(1) Gv = 24 dB.  
(1) THD = 10%, RL = 4 .  
(2) THD = 10%, RL = 8 .  
(3) THD = 10%, RL = 16 .  
(2) Gv = 20 dB.  
(3) Gv = 0 dB.  
Fig.16 SVRR as a function of frequency.  
Fig.17 Po as a function of VCC.  
MGD888  
MGD889  
1.6  
1.2  
handbook, halfpage  
handbook, halfpage  
P
(1)  
(2)  
P
(W)  
(W)  
1.2  
0.8  
0.4  
0.8  
0.4  
(3)  
(1)  
(2)  
(3)  
0
0
0
0
4
8
12  
16  
0.4  
0.8  
1.2  
1.6  
V
(V)  
P
(W)  
CC  
o
(1) RL = 4 .  
(2) RL = 8 .  
(3) RL = 16 .  
(1) VCC = 7.5 V, RL = 4 .  
(2) VCC = 12 V, RL = 16 .  
(3) VCC = 9 V, RL = 8 .  
Fig.18 Worst case power dissipation as a function  
of VCC  
Fig.19 Power dissipation as a function of Po.  
.
1998 Apr 01  
11  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
a. Top view.  
6.8 kΩ  
6.8 kΩ  
MS  
1
8
5
+
OUT  
OUT  
TDA8541  
IN  
1 µF  
11 kΩ  
47 µF  
4
56 kΩ  
100 nF  
100 µF  
+
V
P
MBH920  
b. Component side.  
Fig.20 Printed-circuit board layout (BTL and SE).  
12  
1998 Apr 01  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
PACKAGE OUTLINES  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.050  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
95-02-04  
97-05-22  
SOT96-1  
076E03S  
MS-012AA  
1998 Apr 01  
13  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
DIP8: plastic dual in-line package; 8 leads (300 mil)  
SOT97-1  
D
M
E
A
2
A
A
1
L
c
w M  
Z
b
1
e
(e )  
1
M
H
b
b
2
8
5
pin 1 index  
E
1
4
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
(1)  
Z
A
A
A
2
(1)  
(1)  
1
w
UNIT  
mm  
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.  
min.  
max.  
max.  
1.73  
1.14  
0.53  
0.38  
1.07  
0.89  
0.36  
0.23  
9.8  
9.2  
6.48  
6.20  
3.60  
3.05  
8.25  
7.80  
10.0  
8.3  
4.2  
0.51  
3.2  
2.54  
0.10  
7.62  
0.30  
0.254  
0.01  
1.15  
0.068 0.021 0.042 0.014  
0.045 0.015 0.035 0.009  
0.39  
0.36  
0.26  
0.24  
0.14  
0.12  
0.32  
0.31  
0.39  
0.33  
inches  
0.17  
0.020  
0.13  
0.045  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
92-11-17  
95-02-04  
SOT97-1  
050G01  
MO-001AN  
1998 Apr 01  
14  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
Several techniques exist for reflowing; for example,  
SOLDERING  
Introduction  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
WAVE SOLDERING  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Wave soldering techniques can be used for all SO  
packages if the following conditions are observed:  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave) soldering  
technique should be used.  
DIP  
SOLDERING BY DIPPING OR BY WAVE  
The longitudinal axis of the package footprint must be  
parallel to the solder flow.  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
The package footprint must incorporate solder thieves at  
the downstream end.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
REPAIRING SOLDERED JOINTS  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
REPAIRING SOLDERED JOINTS  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
SO  
REFLOW SOLDERING  
Reflow soldering techniques are suitable for all SO  
packages.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
1998 Apr 01  
15  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Apr 01  
16  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
NOTES  
1998 Apr 01  
17  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
NOTES  
1998 Apr 01  
18  
Philips Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
NOTES  
1998 Apr 01  
19  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Middle East: see Italy  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Fax. +43 160 101 1210  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
Norway: Box 1, Manglerud 0612, OSLO,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belgium: see The Netherlands  
Brazil: see South America  
Pakistan: see Singapore  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
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Tel. +359 2 689 211, Fax. +359 2 689 102  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Portugal: see Spain  
Romania: see Italy  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
Colombia: see South America  
Czech Republic: see Austria  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,  
Tel. +65 350 2538, Fax. +65 251 6500  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
Slovakia: see Austria  
Slovenia: see Italy  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580920  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
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France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
South America: Al. Vicente Pinzon, 173, 6th floor,  
04547-130 SÃO PAULO, SP, Brazil,  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Tel. +55 11 821 2333, Fax. +55 11 821 2382  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA59  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
545102/00/05/pp20  
Date of release: 1998 Apr 01  
Document order number: 9397 750 03352  

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