TDA8541 [NXP]
1 W BTL audio amplifier; 1 W BTL音频放大器器型号: | TDA8541 |
厂家: | NXP |
描述: | 1 W BTL audio amplifier |
文件: | 总20页 (文件大小:194K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8541
1 W BTL audio amplifier
1998 Apr 01
Product specification
Supersedes data of 1997 Feb 19
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
FEATURES
GENERAL DESCRIPTION
• Flexibility in use
The TDA8541(T) is a one channel audio power amplifier
for an output power of 1 W with an 8 Ω load at a 5 V
supply. The circuit contains a BTL amplifier with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8541T comes in an 8 pin SO package and
the TDA8541 in an 8 pin DIP package.
• Few external components
• Low saturation voltage of output stage
• Gain can be fixed with external resistors
• Standby mode controlled by CMOS compatible levels
• Low standby current
APPLICATIONS
• No switch-on/switch-off plops
• Portable consumer products
• Personal computers
• Telephony.
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, VCC and across the
load
• Thermally protected.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP. MAX. UNIT
5
18
12
10
−
V
Iq
quiescent current
VCC = 5 V
−
8
mA
µA
W
Istb
standby current
−
−
Po
output power
THD = 10%; RL = 8 Ω; VCC = 5 V
1
1.2
0.15
−
THD
SVRR
total harmonic distortion
supply voltage ripple rejection
Po = 0.5 W
−
−
%
50
−
dB
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TDA8541T
TDA8541
SO8
plastic small outline package; 8 leads; body width 3.9 mm
plastic dual in-line package; 8 leads (300 mil)
SOT96-1
SOT97-1
DIP8
1998 Apr 01
2
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
BLOCK DIAGRAM
PINNING
SYMBOL
PIN
DESCRIPTION
MODE
1
operating mode select
(standby, mute, operating)
handbook, halfpage
SVR
2
half supply voltage, decoupling
ripple rejection
TDA8541
−
5
4
OUT−
IN−
−
IN+
3
4
5
6
7
8
positive input
3
IN+
+
IN−
negative input
R
6
OUT−
VCC
negative loudspeaker terminal
supply voltage
V
R
CC
GND
OUT+
ground
−
−
+
positive loudspeaker terminal
8
20 kΩ
OUT+
2
1
SVR
20 kΩ
handbook, halfpage
MODE
1
2
3
4
8
7
6
5
OUT+
SVR
IN+
GND
MODE
STANDBY/MUTE LOGIC
TDA8541
7
V
CC
GND
OUT−
IN−
MGB972
MGB971
Fig.2 Pin configuration.
Fig.1 Block diagram.
FUNCTIONAL DESCRIPTION
Mode select pin
The TDA8541(T) is a BTL audio power amplifier capable
of delivering 1 W output power to an 8 Ω load at
THD = 10% using a 5 V power supply. Using the MODE
pin the device can be switched to standby and mute
condition. The device is protected by an internal thermal
shutdown protection mechanism. The gain can be set
within a range from 6 dB to 30 dB by external feedback
resistors.
The device is in standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(VCC − 0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and VCC − 1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output, caused by charging of
the input capacitor.
Power amplifier
The power amplifier is a Bridge Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of an NPN power
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and an 8 Ω loudspeaker an output power of
1 W can be delivered.
1998 Apr 01
3
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.3
MAX.
+18
UNIT
operating
V
VI
input voltage
−0.3
−
VCC + 0.3
1
V
IORM
Tstg
Tamb
Vpsc
Ptot
repetitive peak output current
storage temperature
A
non-operating
−55
−40
−
+150
+85
10
°C
°C
V
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
SO8
−
0.8
W
W
DIP8
−
1.2
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference
Handbook”. The handbook can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
thermal resistance from junction to ambient
TDA8541T (SO8)
160
100
K/W
K/W
TDA8541 (DIP8)
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
2.2
TYP.
MAX.
18
UNIT
operating
5
8
−
V
Iq
quiescent current
standby current
DC output voltage
RL = ∞; note 1
VMODE = VCC
note 2
−
12
10
−
mA
µA
V
Istb
VO
−
−
2.2
−
VOUT+ − VOUT− differential output voltage offset
−
50
500
0.5
mV
nA
V
IIN+, IIN−
input bias current
−
−
VMODE
input voltage mode select
operating
mute
0
−
1.5
−
VCC − 1.5 V
standby
V
CC − 0.5 −
VCC
20
V
IMODE
input current mode select
0 < VMODE < VCC
−
−
µA
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 0.5 × VCC
.
1998 Apr 01
4
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
AC CHARACTERISTICS
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN.
TYP.
1.2
MAX.
UNIT
Po
THD = 10%
THD = 0.5%
Po = 0.5 W
note 1
1
−
−
W
W
%
0.6
−
0.9
0.15
−
THD
Gv
total harmonic distortion
closed loop voltage gain
differential input impedance
noise output voltage
0.3
30
−
6
dB
kΩ
µV
dB
dB
µV
Zi
−
100
−
Vno
note 2
note 3
note 4
note 5
−
100
−
SVRR
supply voltage ripple rejection
50
40
−
−
−
−
Vo
output voltage in mute condition
−
200
Notes
1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 Ω at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including
noise.
1998 Apr 01
5
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
TEST AND APPLICATION INFORMATION
Test conditions
SE application
Tamb = 25 °C if not specially mentioned, VCC = 7.5 V,
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
Because the application can be either Bridge-Tied Load
(BTL) or Single-Ended (SE), the curves of each application
are shown separately.
The SE application diagram is shown in Fig.13.
The capacitor value of C3 in combination with the load
impedance determines the low frequency behaviour.
The total harmonic distortion as a function of frequency
was measured with low-pass filter of 80 kHz. The value of
capacitor C2 influences the behaviour of the SVRR at low
frequencies, increasing the value of C2 increases the
performance of the SVRR.
The thermal resistance = 100 K/W for the DIP8 envelope;
the maximum sine wave power dissipation for
Tamb = 25 °C is:
150 – 25
----------------------
100
= 1.25 W .
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
= 0.9 W .
----------------------
100
General remark
The frequency characteristic can be adapted by
connecting a small capacitor across the feedback resistor.
To improve the immunity of HF radiation in radio circuit
applications, a small capacitor can be connected in
parallel with the feedback resistor (56 kΩ); this creates a
low-pass filter.
BTL application
Tamb = 25 °C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application diagram is shown in Fig.3.
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C2 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C2 increases the performance of the SVRR.
The figure of the mode select voltage (Vms) as a function
of the supply voltage shows three areas; operating, mute
and standby. It shows, that the DC-switching levels of the
mute and standby respectively depends on the supply
voltage level.
1998 Apr 01
6
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
BTL APPLICATION
V
CC
R2
R1
56 kΩ
100 nF
100 µF
6
C1
−
+
IN
4
3
2
1
−
+
OUT
OUT
5
8
11 kΩ
1 µF
IN
R
V
TDA8541
L
SVR
in
MODE
C2
47 µF
7
GND
MBH881
R2
Gain = 2 × -------
R1
Fig.3 BTL application.
MGD876
MGD877
10
15
handbook, halfpage
handbook, halfpage
I
q
THD
(%)
(mA)
(1)
(2)
10
1
−1
5
10
−2
0
0
10
−2
−1
4
8
12
16
20
(V)
10
10
1
10
P
(W)
V
o
CC
f = 1 kHz, Gv = 20 dB.
(1) CC = 5 V, RL = 8 Ω.
(2) VCC = 9 V, RL = 16 Ω.
V
RL = ∞.
Fig.4 Iq as a function of VCC
.
Fig.5 THD as a function of Po.
1998 Apr 01
7
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
MGD878
MGD879
10
−20
handbook, halfpage
handbook, halfpage
SVRR
(dB)
THD
(%)
−40
−60
1
(1)
(1)
(2)
(2)
(3)
−1
10
10
−2
−80
2
3
5
4
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VCC = 5 V, 8 Ω, Rs = 0 Ω, Vi = 100 mV.
(1) Gv = 30 dB.
Po = 0.5 W, Gv = 20 dB.
(1) CC = 5 V, RL = 8 Ω.
(2) VCC = 9 V, RL = 16 Ω.
(2) Gv = 20 dB.
V
(3) Gv = 6 dB.
Fig.6 THD as a function of frequency.
Fig.7 SVRR as a function of frequency.
MGD880
MGD881
2.5
2
handbook, halfpage
handbook, halfpage
P
o
P
(W)
2
(W)
1.5
1
(1)
(2)
1.5
1
(1)
(2)
0.5
0.5
0
0
0
0
4
8
12
4
8
12
V
(V)
V
(V)
CC
CC
(1) RL = 8 Ω.
(2) RL = 16 Ω.
THD = 10%.
(1)
RL = 8 Ω.
(2) RL = 16 Ω.
Fig.9 Worst case power dissipation as a function
of VCC
Fig.8 Po as a function of VCC
.
.
1998 Apr 01
8
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
MGD882
MGD883
1.6
10
o
handbook, halfpage
handbook, halfpage
V
P
(V)
1
(1)
(W)
1.2
−1
10
−2
10
(1)
(2) (3)
(2)
0.8
0.4
0
−3
10
−4
10
−5
10
−6
10
−1
2
10
1
10
10
0
0.5
1
1.5
2
2.5
V
(V)
P
(W)
ms
o
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
Sine wave of 1 kHz.
(1) CC = 9 V, RL = 16 Ω.
(2) VCC = 5 V, RL = 8 Ω.
(2) VCC = 5 V.
V
(3) VCC = 12 V.
Fig.10 P as a function of Po.
Fig.11 Vo as a function of Vms.
MGL070
16
handbook, halfpage
V
ms
(V)
12
standby
8
4
mute
operating
12 16
0
0
4
8
V
(V)
P
Fig.12 Vms as a function of VP.
1998 Apr 01
9
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
SE APPLICATION
V
CC
100 µF
R2
R1
110 kΩ
100 nF
C3
6
C1
−
+
IN
4
3
2
1
11 kΩ
1 µF
−
+
OUT
OUT
IN
5
8
V
TDA8541
SVR
470 µF
in
R
L
MODE
C2
47 µF
7
GND
MBH882
R2
-------
R1
Gain =
Fig.13 SE application.
MGD885
MGD884
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
(2)
(3)
−1
−1
10
10
(2)
(3)
−2
−2
10
10
−2
−1
2
3
4
5
10
10
1
10
10
10
10
10
10
f (Hz)
P
(W)
o
f = 1 kHz, Gv = 20 dB.
Po = 0.5 W, Gv = 20 dB.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 9 V, RL = 8 Ω.
(3) VCC = 12 V, RL = 16 Ω.
Fig.14 THD as a function of Po.
Fig.15 THD as a function of frequency.
1998 Apr 01
10
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
MGD887
MGD886
−20
2
handbook, halfpage
handbook, halfpage
P
o
(W)
1.6
SVRR
(dB)
−40
(3)
(1)
(2)
1.2
0.8
(1)
(2)
−60
(3)
0.4
−80
0
0
2
3
4
5
10
10
10
10
10
4
8
12
16
f (Hz)
V
(V)
CC
VCC = 7.5 V, RL = 4 Ω, Rs = 0 Ω, Vi = 100mV.
(1) Gv = 24 dB.
(1) THD = 10%, RL = 4 Ω.
(2) THD = 10%, RL = 8 Ω.
(3) THD = 10%, RL = 16 Ω.
(2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.16 SVRR as a function of frequency.
Fig.17 Po as a function of VCC.
MGD888
MGD889
1.6
1.2
handbook, halfpage
handbook, halfpage
P
(1)
(2)
P
(W)
(W)
1.2
0.8
0.4
0.8
0.4
(3)
(1)
(2)
(3)
0
0
0
0
4
8
12
16
0.4
0.8
1.2
1.6
V
(V)
P
(W)
CC
o
(1) RL = 4 Ω.
(2) RL = 8 Ω.
(3) RL = 16 Ω.
(1) VCC = 7.5 V, RL = 4 Ω.
(2) VCC = 12 V, RL = 16 Ω.
(3) VCC = 9 V, RL = 8 Ω.
Fig.18 Worst case power dissipation as a function
of VCC
Fig.19 Power dissipation as a function of Po.
.
1998 Apr 01
11
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
a. Top view.
6.8 kΩ
6.8 kΩ
MS
1
8
5
+
−
OUT
OUT
TDA8541
IN
1 µF
11 kΩ
47 µF
4
56 kΩ
100 nF
100 µF
+
V
P
MBH920
b. Component side.
Fig.20 Printed-circuit board layout (BTL and SE).
12
1998 Apr 01
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
PACKAGE OUTLINES
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.050
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-02-04
97-05-22
SOT96-1
076E03S
MS-012AA
1998 Apr 01
13
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
DIP8: plastic dual in-line package; 8 leads (300 mil)
SOT97-1
D
M
E
A
2
A
A
1
L
c
w M
Z
b
1
e
(e )
1
M
H
b
b
2
8
5
pin 1 index
E
1
4
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
(1)
Z
A
A
A
2
(1)
(1)
1
w
UNIT
mm
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.
min.
max.
max.
1.73
1.14
0.53
0.38
1.07
0.89
0.36
0.23
9.8
9.2
6.48
6.20
3.60
3.05
8.25
7.80
10.0
8.3
4.2
0.51
3.2
2.54
0.10
7.62
0.30
0.254
0.01
1.15
0.068 0.021 0.042 0.014
0.045 0.015 0.035 0.009
0.39
0.36
0.26
0.24
0.14
0.12
0.32
0.31
0.39
0.33
inches
0.17
0.020
0.13
0.045
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-02-04
SOT97-1
050G01
MO-001AN
1998 Apr 01
14
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
Several techniques exist for reflowing; for example,
SOLDERING
Introduction
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
WAVE SOLDERING
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
DIP
SOLDERING BY DIPPING OR BY WAVE
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
• The package footprint must incorporate solder thieves at
the downstream end.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
REPAIRING SOLDERED JOINTS
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
REPAIRING SOLDERED JOINTS
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
SO
REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
1998 Apr 01
15
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Apr 01
16
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
1998 Apr 01
17
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
1998 Apr 01
18
Philips Semiconductors
Product specification
1 W BTL audio amplifier
TDA8541
NOTES
1998 Apr 01
19
Philips Semiconductors – a worldwide company
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Middle East: see Italy
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA59
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/00/05/pp20
Date of release: 1998 Apr 01
Document order number: 9397 750 03352
相关型号:
TDA8541T-T
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TDA8541TD-T
IC 1.2 W, 1 CHANNEL, AUDIO AMPLIFIER, PDSO8, 3.90 MM, PLASTIC, MS-012AA, SOT-96-1, SO-8, Audio/Video Amplifier
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