TDA8541T/N1/02,118 [NXP]

TDA8541 - 1 W BTL audio amplifier SOIC 8-Pin;
TDA8541T/N1/02,118
型号: TDA8541T/N1/02,118
厂家: NXP    NXP
描述:

TDA8541 - 1 W BTL audio amplifier SOIC 8-Pin

放大器 光电二极管 商用集成电路
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INTEGRATED CIRCUITS  
DATA SHEET  
TDA8541  
1 W BTL audio amplifier  
Product specification  
1998 Apr 01  
Supersedes data of 1997 Feb 19  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
FEATURES  
GENERAL DESCRIPTION  
Flexibility in use  
The TDA8541(T) is a one channel audio power amplifier  
for an output power of 1 W with an 8 Ω load at a 5 V  
supply. The circuit contains a BTL amplifier with a  
complementary PNP-NPN output stage and standby/mute  
logic. The TDA8541T comes in an 8 pin SO package and  
the TDA8541 in an 8 pin DIP package.  
Few external components  
Low saturation voltage of output stage  
Gain can be fixed with external resistors  
Standby mode controlled by CMOS compatible levels  
Low standby current  
APPLICATIONS  
No switch-on/switch-off plops  
Portable consumer products  
Personal computers  
Telephony.  
High supply voltage ripple rejection  
Protected against electrostatic discharge  
Outputs short-circuit safe to ground, VCC and across the  
load  
Thermally protected.  
QUICK REFERENCE DATA  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.2  
TYP. MAX. UNIT  
5
18  
12  
10  
V
Iq  
quiescent current  
VCC = 5 V  
8
mA  
μA  
W
Istb  
standby current  
Po  
output power  
THD = 10%; RL = 8 Ω; VCC = 5 V  
1
1.2  
0.15  
THD  
SVRR  
total harmonic distortion  
supply voltage ripple rejection  
Po = 0.5 W  
%
50  
dB  
ORDERING INFORMATION  
TYPE  
PACKAGE  
NUMBER  
NAME  
DESCRIPTION  
VERSION  
TDA8541T  
TDA8541  
SO8  
plastic small outline package; 8 leads; body width 3.9 mm  
plastic dual in-line package; 8 leads (300 mil)  
SOT96-1  
SOT97-1  
DIP8  
1998 Apr 01  
2
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
BLOCK DIAGRAM  
PINNING  
SYMBOL  
PIN  
DESCRIPTION  
MODE  
1
operating mode select (standby,  
mute, operating)  
handbook, halfpage  
SVR  
2
half supply voltage, decoupling  
ripple rejection  
TDA8541  
5
4
OUT  
IN−  
IN+  
+
IN+  
3
4
5
6
7
8
positive input  
3
IN−  
negative input  
R
6
OUT−  
VCC  
negative loudspeaker terminal  
supply voltage  
V
R
CC  
GND  
OUT+  
ground  
+
positive loudspeaker terminal  
8
20 kΩ  
OUT+  
2
1
SVR  
20 kΩ  
handbook, halfpage  
MODE  
1
2
3
4
8
7
6
5
OUT+  
SVR  
IN+  
GND  
MODE  
STANDBY/MUTE LOGIC  
TDA8541  
7
V
CC  
GND  
OUT−  
IN−  
MGB972  
MGB971  
Fig.2 Pin configuration.  
Fig.1 Block diagram.  
FUNCTIONAL DESCRIPTION  
Mode select pin  
The TDA8541(T) is a BTL audio power amplifier capable  
of delivering 1 W output power to an 8 Ω load at  
THD = 10% using a 5 V power supply. Using the MODE  
pin the device can be switched to standby and mute  
condition. The device is protected by an internal thermal  
shutdown protection mechanism. The gain can be set  
within a range from 6 dB to 30 dB by external feedback  
resistors.  
The device is in standby mode (with a very low current  
consumption) if the voltage at the MODE pin is  
>(VCC 0.5 V), or if this pin is floating. At a MODE voltage  
level of less than 0.5 V the amplifier is fully operational.  
In the range between 1.5 V and VCC 1.5 V the amplifier  
is in mute condition. The mute condition is useful to  
suppress plop noise at the output, caused by charging of  
the input capacitor.  
Power amplifier  
The power amplifier is a Bridge Tied Load (BTL) amplifier  
with a complementary PNP-NPN output stage.  
The voltage loss on the positive supply line is the  
saturation voltage of a PNP power transistor, on the  
negative side the saturation voltage of an NPN power  
transistor. The total voltage loss is <1 V and with a 5 V  
supply voltage and an 8 Ω loudspeaker an output power of  
1 W can be delivered.  
1998 Apr 01  
3
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.3  
MAX.  
+18  
UNIT  
operating  
V
VI  
input voltage  
0.3  
VCC + 0.3  
1
V
IORM  
Tstg  
Tamb  
Vpsc  
Ptot  
repetitive peak output current  
storage temperature  
A
non-operating  
55  
40  
+150  
+85  
10  
°C  
°C  
V
operating ambient temperature  
AC and DC short-circuit safe voltage  
total power dissipation  
SO8  
0.8  
W
W
DIP8  
1.2  
QUALITY SPECIFICATION  
In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference  
Handbook”. The handbook can be ordered using the code 9397 750 00192.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
thermal resistance from junction to ambient  
TDA8541T (SO8)  
CONDITIONS  
in free air  
VALUE  
UNIT  
160  
100  
K/W  
K/W  
TDA8541 (DIP8)  
DC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL  
VCC  
PARAMETER  
supply voltage  
CONDITIONS  
operating  
MIN.  
2.2  
TYP.  
MAX.  
18  
UNIT  
5
8
V
Iq  
quiescent current  
standby current  
DC output voltage  
RL = ; note 1  
VMODE = VCC  
note 2  
12  
10  
mA  
μA  
V
Istb  
VO  
2.2  
VOUT+ VOUTdifferential output voltage offset  
50  
500  
0.5  
mV  
nA  
V
IIN+, IIN−  
VMODE  
input bias current  
input voltage mode select  
operating  
mute  
0
1.5  
VCC 1.5 V  
standby  
VCC 0.5 −  
VCC  
20  
V
IMODE  
input current mode select  
0 < VMODE < VCC  
μA  
Notes  
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal  
to the DC output offset voltage divided by RL.  
2. The DC output voltage with respect to ground is approximately 0.5 × VCC  
.
1998 Apr 01  
4
 
 
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
AC CHARACTERISTICS  
VCC = 5 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise specified.  
SYMBOL  
PARAMETER  
output power  
CONDITIONS  
THD = 10%  
THD = 0.5%  
Po = 0.5 W  
note 1  
MIN.  
TYP.  
1.2  
MAX.  
UNIT  
Po  
1
W
W
%
0.6  
0.9  
0.15  
THD  
Gv  
total harmonic distortion  
closed loop voltage gain  
differential input impedance  
noise output voltage  
0.3  
30  
6
dB  
kΩ  
μV  
dB  
dB  
μV  
Zi  
100  
Vno  
note 2  
note 3  
note 4  
note 5  
100  
SVRR  
supply voltage ripple rejection  
50  
40  
Vo  
output voltage in mute condition  
200  
Notes  
1. Gain of the amplifier is 2 × R2/R1 in test circuit of Fig.3.  
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a  
source impedance of RS = 0 Ω at the input.  
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.  
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to  
the positive supply rail.  
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 Ω at the input.  
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),  
which is applied to the positive supply rail.  
5. Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, so including  
noise.  
1998 Apr 01  
5
 
 
 
 
 
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
TEST AND APPLICATION INFORMATION  
Test conditions  
SE application  
Tamb = 25 °C if not specially mentioned, VCC = 7.5 V,  
f = 1 kHz, RL = 4 Ω, Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
Because the application can be either Bridge-Tied Load  
(BTL) or Single-Ended (SE), the curves of each application  
are shown separately.  
The SE application diagram is shown in Fig.13.  
The thermal resistance = 100 K/W for the DIP8 envelope;  
the maximum sine wave power dissipation for  
Tamb = 25 °C is:  
The capacitor value of C3 in combination with the load  
impedance determines the low frequency behaviour.  
The total harmonic distortion as a function of frequency  
was measured with low-pass filter of 80 kHz. The value of  
capacitor C2 influences the behaviour of the SVRR at low  
frequencies, increasing the value of C2 increases the  
performance of the SVRR.  
150 25  
---------------------- = 1.25 W .  
100  
For Tamb = 60 °C the maximum total power dissipation is:  
150 60  
= 0.9 W .  
----------------------  
100  
General remark  
The frequency characteristic can be adapted by  
connecting a small capacitor across the feedback resistor.  
To improve the immunity of HF radiation in radio circuit  
applications, a small capacitor can be connected in parallel  
with the feedback resistor (56 kΩ); this creates a low-pass  
filter.  
BTL application  
Tamb = 25 °C if not specially mentioned, VCC = 5 V,  
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass  
22 Hz to 22 kHz.  
The BTL application diagram is shown in Fig.3.  
The quiescent current has been measured without any  
load impedance. The total harmonic distortion as a  
function of frequency was measured with a low-pass filter  
of 80 kHz. The value of capacitor C2 influences the  
behaviour of the SVRR at low frequencies, increasing the  
value of C2 increases the performance of the SVRR.  
The figure of the mode select voltage (Vms) as a function  
of the supply voltage shows three areas; operating, mute  
and standby. It shows, that the DC-switching levels of the  
mute and standby respectively depends on the supply  
voltage level.  
1998 Apr 01  
6
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
BTL APPLICATION  
V
CC  
R2  
R1  
56 kΩ  
100 nF  
100 μF  
6
C1  
+
IN  
4
3
2
1
+
OUT  
OUT  
5
8
11 kΩ  
1 μF  
IN  
R
V
TDA8541  
L
SVR  
in  
MODE  
C2  
47 μF  
7
GND  
MBH881  
R2  
-------  
Gain = 2 ×  
R1  
Fig.3 BTL application.  
MGD876  
MGD877  
10  
15  
handbook, halfpage  
handbook, halfpage  
I
q
THD  
(%)  
(mA)  
(1)  
(2)  
10  
1
1  
5
10  
10  
2  
0
0
2  
1  
4
8
12  
16  
20  
(V)  
10  
10  
1
10  
P
(W)  
V
o
CC  
f = 1 kHz, Gv = 20 dB.  
(1) VCC = 5 V, RL = 8 Ω.  
(2) VCC = 9 V, RL = 16 Ω.  
RL = .  
Fig.4 Iq as a function of VCC  
.
Fig.5 THD as a function of Po.  
1998 Apr 01  
7
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD878  
MGD879  
10  
20  
handbook, halfpage  
handbook, halfpage  
SVRR  
(dB)  
THD  
(%)  
40  
60  
1
(1)  
(1)  
(2)  
(2)  
(3)  
1  
10  
10  
2  
80  
2
3
5
4
2
3
4
5
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
f (Hz)  
f (Hz)  
VCC = 5 V, 8 Ω, Rs = 0 Ω, Vi = 100 mV.  
(1) Gv = 30 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 5 V, RL = 8 Ω.  
(2) VCC = 9 V, RL = 16 Ω.  
(2) Gv = 20 dB.  
(3) Gv = 6 dB.  
Fig.6 THD as a function of frequency.  
Fig.7 SVRR as a function of frequency.  
MGD880  
MGD881  
2.5  
2
handbook, halfpage  
handbook, halfpage  
P
o
P
(W)  
2
(W)  
1.5  
1
(1)  
(2)  
1.5  
1
(1)  
(2)  
0.5  
0.5  
0
0
0
0
4
8
12  
4
8
12  
V
(V)  
V
(V)  
CC  
CC  
(1) RL = 8 Ω.  
THD = 10%.  
(2)  
RL = 16 Ω.  
(1) RL = 8 Ω.  
(2) RL = 16 Ω.  
Fig.9 Worst case power dissipation as a function  
of VCC  
Fig.8 Po as a function of VCC  
.
.
1998 Apr 01  
8
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD882  
MGD883  
1.6  
10  
o
handbook, halfpage  
handbook, halfpage  
V
P
(V)  
1
(1)  
(W)  
1.2  
1  
10  
2  
10  
(1)  
(2) (3)  
(2)  
0.8  
0.4  
0
3  
10  
4  
10  
5  
10  
6  
10  
1  
2
10  
1
10  
10  
0
0.5  
1
1.5  
2
2.5  
V
(V)  
P
(W)  
ms  
o
Band-pass = 22 Hz to 22 kHz.  
(1) CC = 3 V.  
V
Sine wave of 1 kHz.  
(2) VCC = 5 V.  
(3) VCC = 12 V.  
(1) VCC = 9 V, RL = 16 Ω.  
(2) VCC = 5 V, RL = 8 Ω.  
Fig.10 P as a function of Po.  
Fig.11 Vo as a function of Vms.  
MGL070  
16  
handbook, halfpage  
V
ms  
(V)  
12  
standby  
8
4
mute  
operating  
12 16  
0
0
4
8
V
(V)  
P
Fig.12 Vms as a function of VP.  
1998 Apr 01  
9
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
SE APPLICATION  
V
CC  
100 μF  
R2  
R1  
110 kΩ  
100 nF  
C3  
6
C1  
+
IN  
4
3
2
1
11 kΩ  
1 μF  
+
OUT  
OUT  
IN  
5
8
V
TDA8541  
SVR  
470 μF  
in  
R
L
MODE  
C2  
47 μF  
7
GND  
MBH882  
R2  
-------  
Gain =  
R1  
Fig.13 SE application.  
MGD885  
MGD884  
10  
10  
handbook, halfpage  
handbook, halfpage  
THD  
(%)  
THD  
(%)  
1
1
(1)  
(1)  
(2)  
(3)  
1  
1  
10  
10  
(2)  
(3)  
2  
2  
10  
10  
2  
1  
2
3
4
5
10  
10  
1
10  
10  
10  
10  
10  
10  
f (Hz)  
P
(W)  
o
f = 1 kHz, Gv = 20 dB.  
Po = 0.5 W, Gv = 20 dB.  
(1) VCC = 7.5 V, RL = 4 Ω.  
(2) VCC = 9 V, RL = 8 Ω.  
(3) VCC = 12 V, RL = 16 Ω.  
(1) VCC = 7.5 V, RL = 4 Ω.  
(2) VCC = 9 V, RL = 8 Ω.  
(3) VCC = 12 V, RL = 16 Ω.  
Fig.14 THD as a function of Po.  
Fig.15 THD as a function of frequency.  
1998 Apr 01  
10  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
MGD887  
MGD886  
20  
2
handbook, halfpage  
handbook, halfpage  
P
o
(W)  
1.6  
SVRR  
(dB)  
40  
(3)  
(1)  
(2)  
1.2  
0.8  
(1)  
(2)  
60  
(3)  
0.4  
80  
0
0
2
3
4
5
10  
10  
10  
10  
10  
4
8
12  
16  
f (Hz)  
V
(V)  
CC  
VCC = 7.5 V, RL = 4 Ω, Rs = 0 Ω, Vi = 100mV.  
(1) Gv = 24 dB.  
(1) THD = 10%, RL = 4 Ω.  
(2) THD = 10%, RL = 8 Ω.  
(3) THD = 10%, RL = 16 Ω.  
(2) Gv = 20 dB.  
(3) Gv = 0 dB.  
Fig.16 SVRR as a function of frequency.  
Fig.17 Po as a function of VCC.  
MGD888  
MGD889  
1.6  
1.2  
handbook, halfpage  
handbook, halfpage  
P
(1)  
(2)  
P
(W)  
(W)  
1.2  
0.8  
0.4  
0.8  
0.4  
(3)  
(1)  
(2)  
(3)  
0
0
0
0
4
8
12  
16  
0.4  
0.8  
1.2  
1.6  
V
(V)  
P
(W)  
CC  
o
(1) RL = 4 Ω.  
(2) RL = 8 Ω.  
(1) VCC = 7.5 V, RL = 4 Ω.  
(2) CC = 12 V, RL = 16 Ω.  
(3) VCC = 9 V, RL = 8 Ω.  
V
(3)  
RL = 16 Ω.  
Fig.18 Worst case power dissipation as a function  
of VCC  
Fig.19 Power dissipation as a function of Po.  
.
1998 Apr 01  
11  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
a. Top view.  
6.8 kΩ  
6.8 kΩ  
MS  
1
8
5
+
OUT  
OUT  
TDA8541  
IN  
1 μF  
11 kΩ  
47 μF  
4
56 kΩ  
100 nF  
100 μF  
+
V
P
MBH920  
b. Component side.  
Fig.20 Printed-circuit board layout (BTL and SE).  
12  
1998 Apr 01  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
PACKAGE OUTLINES  
SO8: plastic small outline package; 8 leads; body width 3.9 mm  
SOT96-1  
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
4
e
w
M
detail X  
b
p
0
2.5  
5 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(2)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
5.0  
4.8  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.27  
0.05  
1.05  
0.041  
1.75  
0.25  
0.01  
0.25  
0.01  
0.25  
0.1  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.20  
0.014 0.0075 0.19  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches 0.069  
0.01 0.004  
Notes  
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.  
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-18  
SOT96-1  
076E03  
MS-012  
1998 Apr 01  
13  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
DIP8: plastic dual in-line package; 8 leads (300 mil)  
SOT97-1  
D
M
E
A
2
A
A
1
L
c
w M  
Z
b
1
e
(e )  
1
M
H
b
b
2
8
5
pin 1 index  
E
1
4
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
(1)  
Z
A
A
A
2
(1)  
(1)  
1
w
UNIT  
mm  
b
b
b
c
D
E
e
e
L
M
M
H
1
2
1
E
max.  
min.  
max.  
max.  
1.73  
1.14  
0.53  
0.38  
1.07  
0.89  
0.36  
0.23  
9.8  
9.2  
6.48  
6.20  
3.60  
3.05  
8.25  
7.80  
10.0  
8.3  
4.2  
0.51  
3.2  
2.54  
0.1  
7.62  
0.3  
0.254  
0.01  
1.15  
0.068 0.021 0.042 0.014  
0.045 0.015 0.035 0.009  
0.39  
0.36  
0.26  
0.24  
0.14  
0.12  
0.32  
0.31  
0.39  
0.33  
inches  
0.17  
0.02  
0.13  
0.045  
Note  
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-13  
SOT97-1  
050G01  
MO-001  
SC-504-8  
1998 Apr 01  
14  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
SOLDERING  
Introduction  
Several techniques exist for reflowing; for example,  
thermal conduction by heated belt. Dwell times vary  
between 50 and 300 seconds depending on heating  
method. Typical reflow temperatures range from  
215 to 250 °C.  
There is no soldering method that is ideal for all IC  
packages. Wave soldering is often preferred when  
through-hole and surface mounted components are mixed  
on one printed-circuit board. However, wave soldering is  
not always suitable for surface mounted ICs, or for  
printed-circuits with high population densities. In these  
situations reflow soldering is often used.  
Preheating is necessary to dry the paste and evaporate  
the binding agent. Preheating duration: 45 minutes at  
45 °C.  
WAVE SOLDERING  
This text gives a very brief insight to a complex technology.  
A more in-depth account of soldering ICs can be found in  
our “IC Package Databook” (order code 9398 652 90011).  
Wave soldering techniques can be used for all SO  
packages if the following conditions are observed:  
A double-wave (a turbulent wave with high upward  
pressure followed by a smooth laminar wave) soldering  
technique should be used.  
DIP  
SOLDERING BY DIPPING OR BY WAVE  
The longitudinal axis of the package footprint must be  
The maximum permissible temperature of the solder is  
260 °C; solder at this temperature must not be in contact  
with the joint for more than 5 seconds. The total contact  
time of successive solder waves must not exceed  
5 seconds.  
parallel to the solder flow.  
The package footprint must incorporate solder thieves at  
the downstream end.  
During placement and before soldering, the package must  
be fixed with a droplet of adhesive. The adhesive can be  
applied by screen printing, pin transfer or syringe  
dispensing. The package can be soldered after the  
adhesive is cured.  
The device may be mounted up to the seating plane, but  
the temperature of the plastic body must not exceed the  
specified maximum storage temperature (Tstg max). If the  
printed-circuit board has been pre-heated, forced cooling  
may be necessary immediately after soldering to keep the  
temperature within the permissible limit.  
Maximum permissible solder temperature is 260 °C, and  
maximum duration of package immersion in solder is  
10 seconds, if cooled to less than 150 °C within  
6 seconds. Typical dwell time is 4 seconds at 250 °C.  
REPAIRING SOLDERED JOINTS  
A mildly-activated flux will eliminate the need for removal  
of corrosive residues in most applications.  
Apply a low voltage soldering iron (less than 24 V) to the  
lead(s) of the package, below the seating plane or not  
more than 2 mm above it. If the temperature of the  
soldering iron bit is less than 300 °C it may remain in  
contact for up to 10 seconds. If the bit temperature is  
between 300 and 400 °C, contact may be up to 5 seconds.  
REPAIRING SOLDERED JOINTS  
Fix the component by first soldering two diagonally-  
opposite end leads. Use only a low voltage soldering iron  
(less than 24 V) applied to the flat part of the lead. Contact  
time must be limited to 10 seconds at up to 300 °C. When  
using a dedicated tool, all other leads can be soldered in  
one operation within 2 to 5 seconds between  
270 and 320 °C.  
SO  
REFLOW SOLDERING  
Reflow soldering techniques are suitable for all SO  
packages.  
Reflow soldering requires solder paste (a suspension of  
fine solder particles, flux and binding agent) to be applied  
to the printed-circuit board by screen printing, stencilling or  
pressure-syringe dispensing before package placement.  
1998 Apr 01  
15  
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Limited warranty and liability Information in this  
document is believed to be accurate and reliable.  
However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to  
the accuracy or completeness of such information and  
shall have no liability for the consequences of use of such  
information.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
In no event shall NXP Semiconductors be liable for any  
indirect, incidental, punitive, special or consequential  
damages (including - without limitation - lost profits, lost  
savings, business interruption, costs related to the  
removal or replacement of any products or rework  
charges) whether or not such damages are based on tort  
(including negligence), warranty, breach of contract or any  
other legal theory.  
Customers are responsible for the design and operation of  
their applications and products using NXP  
Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole  
responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as  
for the planned application and use of customer’s third  
party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks  
associated with their applications and products.  
Notwithstanding any damages that customer might incur  
for any reason whatsoever, NXP Semiconductors’  
aggregate and cumulative liability towards customer for  
the products described herein shall be limited in  
accordance with the Terms and conditions of commercial  
sale of NXP Semiconductors.  
NXP Semiconductors does not accept any liability related  
to any default, damage, costs or problem which is based  
on any weakness or default in the customer’s applications  
or products, or the application or use by customer’s third  
party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and  
products using NXP Semiconductors products in order to  
avoid a default of the applications and the products or of  
the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this  
respect.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in life support, life-critical or safety-critical systems or  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
1998 Apr 01  
16  
 
 
NXP Semiconductors  
Product specification  
1 W BTL audio amplifier  
TDA8541  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) will cause permanent damage to  
the device. Limiting values are stress ratings only and  
(proper) operation of the device at these or any other  
conditions above those given in the Recommended  
operating conditions section (if present) or the  
Characteristics sections of this document is not warranted.  
Constant or repeated exposure to limiting values will  
permanently and irreversibly affect the quality and  
reliability of the device.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Non-automotive qualified products Unless this data  
sheet expressly states that this specific NXP  
Semiconductors product is automotive qualified, the  
product is not suitable for automotive use. It is neither  
qualified nor tested in accordance with automotive testing  
or application requirements. NXP Semiconductors accepts  
no liability for inclusion and/or use of non-automotive  
qualified products in automotive equipment or  
applications.  
Terms and conditions of commercial sale NXP  
Semiconductors products are sold subject to the general  
terms and conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an  
individual agreement is concluded only the terms and  
conditions of the respective agreement shall apply. NXP  
Semiconductors hereby expressly objects to applying the  
customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
In the event that customer uses the product for design-in  
and use in automotive applications to automotive  
specifications and standards, customer (a) shall use the  
product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and  
specifications, and (b) whenever customer uses the  
product for automotive applications beyond NXP  
Semiconductors’ specifications such use shall be solely at  
customer’s own risk, and (c) customer fully indemnifies  
NXP Semiconductors for any liability, damages or failed  
product claims resulting from customer design and use of  
the product for automotive applications beyond NXP  
Semiconductors’ standard warranty and NXP  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Semiconductors’ product specifications.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
1998 Apr 01  
17  
NXP Semiconductors  
provides High Performance Mixed Signal and Standard Product  
solutions that leverage its leading RF, Analog, Power Management,  
Interface, Security and Digital Processing expertise  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2010  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
545102/00/05/pp18  
Date of release: 1998 Apr 01  
Document order number: 9397 750 03352  

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