TDA8552TD-T [NXP]
暂无描述;
| 型号： | TDA8552TD-T |
| 厂家： | 
NXP |
| 描述： | 暂无描述 音频放大器 |
| 文件： | 总28页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TDA8552T; TDA8552TS
2 × 1.4 W BTL audio amplifiers with
digital volume control and
headphone sensing
1998 Jun 02
Preliminary specification
Supersedes data of 1998 Feb 26
File under Integrated Circuits, IC01
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
FEATURES
GENERAL DESCRIPTION
• One pin digital volume control (for each channel)
• Volume setting with up/down pulses
• Auto repeat function on volume setting
• Headphone sensing
The TDA8552T is a two channel audio power amplifier that
provides an output power of 2 × 1.4 W into an 8 Ω load
using a 5 V power supply. The circuit contains two BTL
power amplifiers, two digital volume controls and
standby/mute logic. Volume and balance of the amplifiers
are controlled using two digital input pins which can be
driven by simple push-buttons or by a microcontroller.
• Maximum gain set by selection pin
• Low sensitivity for EMC radiation
• Internal feedback resistors
Using the selection pin (GAINSEL) the maximum gain can
be set at 20 or 30 dB. The headphone sense input (HPS)
can be used to detect if a headphone is plugged into the
jack connector. If a headphone is plugged into the jack
connector the amplifier switches from the BTL to the SE
mode and the BTL loudspeakers are switched off. This
also results in a reduction of quiescent current
consumption.
• Flexibility in use
• Few external components
• Low saturation voltage of output stage
• Standby mode controlled by CMOS compatible levels
• Low standby current
• No switch-on/switch-off plops
The TDA8552T is contained in a 20-pin small outline
package. For the TDA8552TS, which is contained in a
20-pin very small outline package, the maximum output
power is limited by the maximum allowed ambient
temperature. More information can be found in Section
“Thermal design considerations”. The SO20 package has
the four corner leads connected to the die pad so that the
thermal behaviour can be improved by the PCB layout.
• High supply voltage ripple rejection
• Protected against electrostatic discharge
• Outputs short-circuit safe to ground, VDD and across the
load
• Thermally protected.
APPLICATIONS
• Portable consumer products
• Notebook computers
• Communication equipment.
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
plastic small outline package; 20 leads; body width 7.5 mm
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
VERSION
SOT163-1
SOT266-1
TDA8552T
SO20
TDA8552TS
1998 Jun 02
2
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.7
TYP.
MAX.
5.5
UNIT
VDD
Iq
5
V
quiescent supply current BTL mode; VDD = 5 V
BTL mode; VDD = 3.3 V
−
−
−
−
−
1
−
−
−
−
−
−
50
14
10
8.5
5
20
15
12
8
mA
mA
mA
mA
µA
W
SE mode; VDD = 5 V
SE mode; VDD = 3.3 V
Istb
Po
Gv
standby current
1
10
−
output power
voltage gain
THD = 10%; RL = 8 Ω; VDD = 5 V
1.4
20
−60
30
−50
64
0.1
−
low gain; maximum volume
low gain; minimum volume
high gain; maximum volume
high gain; minimum volume
−
dB
dB
dB
dB
−
−
−
Nstep
THD
number of volume steps
total harmonic distortion
−
Po = 0.5 W
−
%
SVRR
supply voltage ripple
rejection
−
dB
1998 Jun 02
3
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
BLOCK DIAGRAM
V
3
V
8
V
V
DD1
DD2
DD3
13
DD4
18
17
IN1
VOLUME
CONTROL
20
12
OUT1+
kΩ
MASTER
0.5V
15 kΩ
DD
20 dB
30 dB
3.4 kΩ
1.6 kΩ
20 kΩ
20 kΩ
UP/DOWN
COUNTER
V
DD
up
down
UP/DOWN1
SVR
6
0.5V
DD
19
OUT1−
INTERFACE
SLAVE
15 kΩ
0.5V
DD
16
0.5V
DD
TDA8552T
15 kΩ
15
IN2
VOLUME
CONTROL
20
2
OUT2+
kΩ
MASTER
15 kΩ
0.5V
DD
20 dB
30 dB
3.4 kΩ
1.6 kΩ
20 kΩ
20 kΩ
UP/DOWN
COUNTER
V
DD
up
down
7
UP/DOWN2
0.5V
DD
9
OUT2−
INTERFACE
15 kΩ
0.5V
SLAVE
0.5V
DD
DD
15 kΩ
5
4
MODE
HPS
GAIN
SELECTION
STANDBY/MUTE
AND OPERATING
14
1, 10, 11, 20
GND1 to GND4
MGM608
GAINSEL
Fig.1 Block diagram.
4
1998 Jun 02
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
PINNING
SYMBOL
GND1
PIN(1)
DESCRIPTION
1
2
ground 1, substrate/leadframe
OUT2+
positive loudspeaker terminal
output channel 2
VDD1
HPS
3
4
supply voltage 1
digital input for headphone
sensing
MODE
5
digital trinary input for mode
selection (standby, mute and
operating)
handbook, halfpage
GND1
20 GND4
1
2
19
18
17
OUT2+
OUT1−
UP/DOWN1
UP/DOWN2
6
7
digital trinary input for volume
control channel 1
V
V
3
DD1
DD4
HPS
IN1
4
digital trinary input for volume
control channel 2
MODE
16 SVR
15 IN2
5
TDA8552T
VDD2
8
9
supply voltage 2
UP/DOWN1
UP/DOWN2
6
OUT2−
negative loudspeaker terminal
output channel 2
GAINSEL
7
14
13
12
11
V
V
8
GND2
GND3
OUT1+
10
11
12
ground 2, substrate/leadframe
ground 3, substrate/leadframe
DD2
DD3
OUT2−
OUT1+
9
positive loudspeaker terminal
output channel 1
GND2
GND3
10
MGM610
VDD3
13
14
15
16
supply voltage 3
GAINSEL
IN2
digital input for gain selection
audio input channel 2
SVR
half supply voltage, decoupling
ripple rejection
IN1
17
18
19
audio input channel 1
supply voltage 4
VDD4
OUT1−
negative loudspeaker terminal
output channel 1
Fig.2 Pin configuration.
GND4
20
ground 4, substrate/leadframe
Note
1. For the SO20 (SOT163-1) package only: the ground
pins 1, 10, 11 and 20 are mechanically connected to
the leadframe and electrically to the substrate of the
die. On the PCB the ground pins can be connected to
a copper area to decrease the thermal resistance.
1998 Jun 02
5
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
FUNCTIONAL DESCRIPTION
Volume control
The TDA8552T is a 2 × 1.4 W BTL audio power amplifier
capable of delivering 2 × 1.4 W output power into an 8 Ω
load at THD = 10% using a 5 V power supply. The gain of
the amplifier can be set by the digital volume control.
The gain in the maximum volume setting is 20 dB (low
gain) or 30 dB (high gain). This maximum gain can be
selected by the gain selection pin. The headphone sense
input (HPS) can be used to detect if a headphone is
plugged into the jack connector. If a headphone is plugged
into the jack connector the amplifier switches from the BTL
to the SE mode and the BTL loudspeakers are switched
off. This also results in a reduction of quiescent current
consumption. Using the MODE pin the device can be
switched to the standby condition, the mute condition or
the normal operating condition. The device is protected by
an internal thermal shutdown protection mechanism.
Each attenuator is controlled with its own UP/DOWN pin
(trinary input):
• Floating UP/DOWN pin: volume remains unchanged
• Negative pulses: decreasing volume
• Positive pulses: increasing volume.
Each pulse on the UP/DOWN pin results in a change in
80
gain of
= 1.25 dB (typical value).
------
64
In the basic application the UP/DOWN pin is switched to
ground or VDD by a double push-button. When the supply
voltage is initially connected, after a complete removal of
the supply, the initial state of the volume control is an
attenuation of 40 dB (low volume), so the gain of the total
amplifier is −20 dB in the low gain setting or −10 dB in the
high gain setting. After powering-up, some positive pulses
have to be applied to the UP/DOWN pin for turning up to
listening volume.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary CMOS output stage. The total
voltage loss for both output power MOS transistors is
within 1 V and with a 5 V supply and an 8 Ω loudspeaker
an output power of 1.4 W can be delivered. The total gain
of this power amplifier can be set at 20 or 30 dB by the
gain selection pin.
Auto repeat
If the UP/DOWN pin is LOW or HIGH for the wait time (twait
in seconds) (one of the keys is pressed) then the device
starts making up or down pulses by itself with a frequency
1
trep
given by
(repeat function).
-------
Gain selection
The gain selection can be used for a fixed gain setting,
depending on the application. The gain selection pin must
be hard wired to ground (20 dB) or to VDD (30 dB). Gain
selecting during the operation is not advised, switching is
not guaranteed plop free.
The wait time and the repeat frequency are set using an
internal RC oscillator with an accuracy of ±10%.
Volume settings in standby mode
When the device is switched with the MODE select pin to
the mute or the standby condition, the volume control
attenuation setting keeps its value, under the assumption
that the voltage on the VDD pin does not fall below the
minimum supply voltage. After switching the device back
to the operation mode, the previous volume setting is
maintained. In the standby mode the volume setting is
maintained as long as the minimum supply voltage is
available. The current consumption is very low,
Input attenuator
The volume control operates as a digitally controlled input
attenuator between the audio input pin and the power
amplifier. In the maximum volume control setting the
attenuation is 0 dB and in the minimum volume control
setting the typical attenuation is 80 dB. The attenuation
can be set in 64 steps by the UP/DOWN pin. Both
attenuators for channels 1 and 2 are separated from each
other and are controlled by there own UP/DOWN pin.
Balance control can be arranged by applying UP/DOWN
pulses only on pins 6 and 7, see Fig.5.
approximately 1 µA (typ.). In battery fed applications the
volume setting can be maintained during battery exchange
if there is a supply capacitor available.
1998 Jun 02
6
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
When no headphone is plugged in, the voltage level at the
HPS pin will remain LOW. A voltage less than VDD − 1 V at
the HPS pin will keep the device in the BTL mode, thus the
loudspeakers can be operational. If the HPS pin is not
connected then the device will remain in the BTL mode.
Mode select pin
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is between
VDD and VDD − 0.5 V. At a mode select voltage level of less
than 0.5 V the amplifier is fully operational. In the range
between 1 V and VDD − 1 V the amplifier is in the mute
condition. The mute condition is useful for using it as a ‘fast
mute’, in this mode the output signal is suppressed, while
the volume setting remains at its value. It is advised to
keep the device in the mute condition while the input
capacitor is being charged. This can be achieved by
holding the MODE pin at a level of 0.5VDD, or by waiting
approximately 100 ms before giving the first volume-UP
pulses.
When a headphone is plugged into the connector, the
voltage at the HPS pin will be set to VDD. The device then
switches to the Single-Ended (SE) mode, this means that
the slave power amplifiers at the outputs OUT1− and
OUT2− will be switched to the standby mode. This results
in floating outputs OUT1− and OUT2−, the loudspeaker
signal is thus attenuated by approximately 80 dB and only
the headphone can operate.
One of the benefits of this system is that the loudspeaker
current does not flow through the jack connector switch,
which could give some output power loss. The other
benefit is that the quiescent current is reduced when the
headphone jack is inserted.
Headphone sense pin (HPS)
A headphone can be connected to the amplifier by using a
coupling capacitor for each channel. The common ground
pin of the headphone is connected to the ground of the
amplifier, see Fig.4. By using the HPS pin as illustrated in
Fig.4, the TDA8552T detects if a headphone jack plug is
inserted into the connector.
1998 Jun 02
7
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDD
PARAMETER
CONDITIONS
operating
MIN.
−0.3
MAX.
+5.5
UNIT
supply voltage
input voltage
V
V
A
Vi
−0.3
−
VDD + 0.3
1
IORM
Tstg
Tamb
Vsc
repetitive peak output current
storage temperature
−55
−40
−
+150
+85
5.5
°C
°C
V
operating ambient temperature
AC and DC short-circuit safe voltage
maximum power dissipation
Ptot
SO20
−
2.2
W
W
SSOP20
−
1.1
THERMAL CHARACTERISTICS
See Section “Thermal design considerations” in Chapter “Test and application information”.
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient
for the TDA8552T (SO20)
in free air
60
55
K/W
K/W
K/W
K/W
extra copper
in free air
for the TDA8552TS (SSOP20)
110
80
extra copper
Table 1 Power rating; note 1
MUSIC POWER
SO20
Po (W)
THD = 10%
V
DD (V)
RL (Ω)
OPERATION
Tamb(max) (°C)
Pmax (W)
SSOP20
106
127
139
150
50
3.3
3.3
3.3
3.3
5.0
5.0
5.0
5.0
4
8
0.9
0.6
BTL
BTL
0.55
0.28
0.14
0.03
1.25
0.65
0.32
0.07
120
134
16
0.3
BTL
142
32SE
4
0.035
2.0
headphone
BTL
150
81
8
1.4
BTL
114
98
16
0.8
BTL
132
124
144
32SE
0.09
headphone
146
continuous sine wave
3.3
5
4
8
0.9
1.4
BTL
BTL
1.1
89
81
62
50
1.25
Note
1. The power rating is based on Rth(j-a) with recommended copper pattern of at least 4 × 1 cm2 to the corner leads and
copper under the IC package.
1998 Jun 02
8
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
QUALITY SPECIFICATION
Quality specification in accordance with “SNW-FQ-611 part E”, if this type is used as an audio amplifier.
DC CHARACTERISTICS
VDD = 5 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; total gain setting at 7 dB; according to Fig.4.; unless otherwise
specified.
SYMBOL
VDD
PARAMETER
supply voltage
CONDITIONS
MIN.
2.7
TYP.
MAX.
5.5
UNIT
5
V
IDD
supply current
BTL mode; VDD = 5 V;
−
14
20
mA
RL = ∞; note 1
SE mode; VDD = 5 V
−
−
8.5
10
12
15
mA
mA
BTL mode; VDD = 3.3 V;
RL = ∞; note 1
SE mode; VDD = 3.3 V
VMODE = VDD
−
−
−
−
−
5
8
mA
µA
V
Istb
VO
standby current
1
10
−
DC output voltage
note 2
2.5
−
VOUT+ − VOUT− differential output offset
GAINSEL = 0 V
GAINSEL = VDD
50
150
mV
mV
voltage
−
Mode select pin
VMODE
input voltage
standby
V
1
DD − 0.5 −
VDD
V
mute
−
VDD − 1.4 V
operating
0 < VMODE < VDD
note 3
0
−
0.5
1
V
IMODE
input current
−
−
µA
dB
αmute
mute attenuation
80
tbf
−
Gain select pin
VGAINSEL
input voltage
input current
low gain (20 dB)
high gain (30 dB)
0
−
−
−
0.6
VDD
1
V
4.1
−
V
IGAINSEL
µA
Headphone sense pin
VHPS input voltage
SE mode; headphone
detected
V
DD − 1
−
−
VDD
1
V
IHPS
input current
−
µA
1998 Jun 02
9
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Volume control
tW
pulse width
50
−
−
−
−
−
ns
trep
pulse repetition time
100
4.1
ns
V
Vth(up)
UP/DOWN pin UP threshold
level
VDD
3.4
−
Vfloat(max)
Vfloat(min)
Vth(down)
UP/DOWN pin floating high
level
−
−
−
−
−
V
V
V
UP/DOWN pin floating low
level
1.0
0
UP/DOWN pin DOWN
threshold level
0.6
II(up/down)
twait
input current UP/DOWN pin 0 < VUP/DOWN < VDD
auto repeat wait time
−
−
−
200
−
µA
ms
ms
500
130
trep
repeat time
key pressed
−
Volume attenuator
Gv(l)
low gain; maximum volume
(including power amplifier)
19
tbf
29
tbf
20
21
tbf
31
tbf
dB
dB
dB
dB
low gain; minimum volume
(including power amplifier)
−60
30
Gv(h)
high gain; maximum volume
(including power amplifier)
high gain; minimum volume
(including power amplifier)
−50
Nstep
∆Gv
number of gain steps
variation of gain per step
input impedance
−
64
1.25
20
−
−
−
−
dB
kΩ
V
Zi
14
−
−
Vi(max)(rms)
maximum input voltage
(RMS value)
1.75
Notes
1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal
DC output offset voltage
to 2 ×
----------------------------------------------------------------
RL
2. The DC output voltage with respect to ground is approximately 0.5VDD
.
3. Output voltage in mute position is measured with an input of 1 V (RMS) in a bandwidth of 20 kHz, so including noise,
gain select pin is LOW (0 V).
1998 Jun 02
10
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (VDD = 3.3 V)
Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; total gain setting at 7 dB; VMODE = 0 V; gain select pin is at 0 V
(maximum gain = 20 dB); according to Fig.4.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN.
TYP.
0.9
MAX.
UNIT
Po
THD = 10%; RL = 4 Ω
THD = 10%; RL = 8 Ω
THD = 10%; RL = 16 Ω
THD = 0.5%; RL = 4 Ω
THD = 0.5%; RL = 8 Ω
THD = 0.5%; RL = 16 Ω
Po = 0.1 W; note 1
note 2
−
−
−
−
−
−
−
−
−
−
W
W
W
W
W
W
%
−
0.6
0.3
0.6
0.4
0.2
0.1
60
−
−
−
−
THD
total harmonic distortion
noise output voltage
−
Vo(n)
−
µV
SVRR
supply voltage ripple
rejection
note 3
tbf
55
dB
Vi(max)
maximum input voltage
THD = 1%;
−
−
1.1
V
Gv = −50 to 0 dB
αsup
αcs
channel suppression
channel separation
VHPS = VDD; note 4
−
−
80
55
−
−
dB
dB
Notes
1. Volume setting at maximum.
2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω, gain select pin is LOW (0 V).
3. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
4. Channel suppression is measured at the output with a source impedance of Rsource = 0 Ω at the input and a
frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 2 V (RMS).
1998 Jun 02
11
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (VDD = 5 V)
Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; total gain setting at 7 dB; VMODE = 0 V; Gain select pin is at 0 V
(maximum gain = 20 dB); according to Fig.4; package is SO20.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN.
1.0
TYP.
1.4
MAX.
UNIT
Po
THD = 10%; RL = 8 Ω
THD = 10%; RL = 16 Ω
THD = 0.5%; RL = 8 Ω
THD = 0.5%; RL = 16 Ω
Po = 0.1 W; note 1
Po = 0.5 W; note 1
GAINSEL. = 0 V; note 2
GAINSEL. = VDD; note 2
note 3
−
−
−
−
W
W
W
W
%
%
−
0.8
1.0
0.6
0.15
0.1
60
0.6
−
THD
Vo(n)
total harmonic distortion
noise output voltage
−
0.4
0.3
100
−
−
−
µV
µV
dB
−
100
55
SVRR
Vi(max)
supply voltage ripple
rejection
50
−
a maximum input voltage THD = 1%;
Gv = −50 to 0 dB
VHPS = VDD; note 4
−
−
1.75
V
αsup
αcs
channel suppression
channel separation
70
50
80
−
−
dB
dB
−
Notes
1. Volume setting at maximum.
2. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
4. Channel suppression is measured at the output with a source impedance of Rsource = 0 Ω at the input and a
frequency of 1 kHz. The output level in the operating single-ended channel (OUT+) is set at 1 V (RMS).
1998 Jun 02
12
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
AC CHARACTERISTICS (FOR HEADPHONE; RL = 32 Ω; CONNECTED SE)
VDD = 5 V; Tamb = 25 °C; f = 1 kHz; total gain setting at 20 dB; VMODE = 0 V; gain select pin is 0 V
(maximum gain = 20 dB); according to Fig.4.
SYMBOL
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
mW
Po
THD = 10%; VDD = 3.3 V
THD = 10%; VDD = 5.0 V
−
−
35
90
25
60
−
−
−
−
−
mW
mW
mW
%
THD = 0.5%; VDD = 3.3 V −
THD = 0.5%; VDD = 5.0 V −
THD
total harmonic distortion
noise output voltage
Po = 60 mW
note 1
−
0.04
60
Vo(n)
−
100
µV
SVRR
supply voltage ripple
rejection
note 2
50
55
−
dB
Vi(max)
maximum input voltage
THD = 1%;
Gv = −50 to 0 dB
−
−
−
1.75
V
αcs
channel separation
50
−
dB
Notes
1. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
Rsource = 0 Ω, gain select pin is LOW (0 V).
2. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource = 0 Ω at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
t
t
t
w
r
rep
V
DD
th(UP)
float(max)
increasing volume
floating
V
V
V
UP/DOWN
V
float(min)
V
th(DOWN)
0
decreasing volume
t
t
t
t
w
r
rep
MGM611
The rise time (tr) of the pulse may have any value.
Fig.3 Timing UP/DOWN pin.
13
1998 Jun 02
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
TEST AND APPLICATION INFORMATION
V
= 5 V
DD
100
nF
V
V
DD3, 4
DD1, 2
C3
C4
220 µF
3, 8
13, 18
C1
330 nF
17
IN1
VOLUME
CONTROL
20
C5
12
OUT1+
kΩ
V
IN1
MASTER
220 µF
R1
1 kΩ
0.5V
15 kΩ
DD
20 dB
30 dB
3.4 kΩ
1.6 kΩ
20 kΩ
20 kΩ
UP/DOWN
COUNTER
8 Ω
V
DD
V
DD
up
up
down
R5
UP/DOWN1
6
volume
control
0.5V
DD
0.5V
19
OUT1−
INTERFACE
SLAVE
2.2 kΩ
15 kΩ
100
nF
headphone jack
tip
down
DD
C7
C3
16
SVR
0.5V
DD
220 µF
ring
sleeve
TDA8552T
15 kΩ
C2
15
IN2
VOLUME
CONTROL
330 nF
20
kΩ
C6
2
OUT2+
V
IN2
MASTER
220 µF
R4
1 kΩ
15 kΩ
0.5V
DD
20 dB
30 dB
3.4 kΩ
1.6 kΩ
20 kΩ
20 kΩ
UP/DOWN
COUNTER
V
8 Ω
DD
V
DD
up
down
up
R6
7
UP/DOWN2
volume
control
0.5V
DD
0.5V
9
OUT2−
INTERFACE
15 kΩ
0.5V
SLAVE
2.2 kΩ
C8
100 nF
down
DD
DD
15 kΩ
V
DD
standby
5
4
MODE
HPS
mute
GAIN
SELECTION
STANDBY/MUTE
AND OPERATING
operating
14
1, 10, 11, 20
V
DD
GAINSEL
GND1 to GND4
R2
820 kΩ
R3
100 kΩ
ground
MGM609
V
DD
Fig.4 Test and application diagram.
14
1998 Jun 02
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
Test conditions
amb = 25°C if not specially mentioned; VDD = 5 V;
BTL application
The BTL application diagram is illustrated in Fig.4.
T
f = 1 kHz, RL = 8 Ω, Gv = 20 dB, audio band-pass
22 Hz to 22 kHz. The thermal resistance (in standard print,
without extra copper) = 110 K/W for the SSOP20; the
maximum sine wave power dissipation is:
The quiescent current has been measured without any
load impedance. The total harmonic distortion as a
function of frequency was measured with a low-pass filter
of 80 kHz. The value of capacitor C3 influences the
behaviour of the SVRR at low frequencies, increasing the
value of C3 increases the performance of the SVRR.
150 – 25
= 1.14 W
----------------------
110
For Tamb = 60 °C the maximum total power dissipation is:
150 – 60
Headphone application
= 0.82 W
----------------------
110
Tamb = 25°C if not specially mentioned, VDD = 5 V,
f = 1 kHz, RL = 32 Ω, Gv = 14 dB, audio band-pass
22 Hz to 22 kHz.
Thermal design considerations
For headphone application diagram see: Fig.4
The ‘measured’ thermal resistance of the IC package is
highly dependent on the configuration and size of the
application board. All surface mount packages rely on the
traces of the PCB to conduct heat away from the package.
To improve the heat flow, a significant area on the PCB
must be attached to the (ground) pins. Data may not be
comparable between different semiconductor
manufacturers because the application boards and test
methods are not (yet) standardized. Also, the thermal
performance of packages for a specific application may be
different than presented here, because the configuration of
the application boards (copper area) may be different.
Philips Semiconductors uses FR-4 type application boards
with 1 oz copper traces with solder coating Solder Resist
Mask (SRM).
If a headphone is plugged into the headphone jack, the
HPS pin will switch-off the outputs of the SLAVE output
stage, this results in a mute attenuation >80 dB for the
loudspeakers. In this condition the quiescent current will
be reduced.
General remarks
Reduction of the value of capacitor C3 results in a
decrease of the SVRR performance at low frequencies.
The capacitor value of C5 and C6 in combination with the
load impedance of the headphone determines the low
frequency behaviour.
To prevent against high output currents during inserting
the headphone into the headphone jack, resistors of 5.1 Ω
have to be connected in series with the SE output lines.
The SSOP20 package has improved thermal conductivity
which reduces the thermal resistance. Using a practical
PCB layout (see Fig.18) with wider copper tracks to the
corner pins and just under the IC, the thermal resistance
from junction to ambient can be reduced to approximately
80 K/W. For Tamb = 60 °C the maximum total power
The UP/DOWN pin can be driven by a 3-state logic output
stage (microprocessor) without extra external
components. If the UP/DOWN pin is driven by
push-buttons, then it is advised to have an RC-filter
between the buttons and the UP/DOWN pin. Advised
values for the RC-filter are 2.2 kΩ and 100 nF. Resistor R4
is not necessary for basic operation, but is advised to
keep C6 charged to a voltage of 0.5VDD This has the
advantage that the plop noise when inserting the
headphone plug is minimal. If the headphone sense
function (HPS) is not used then the HPS-pin 4 should be
hard-wired to ground. This pin should never be left
unconnected.
150 – 60
dissipation for this PCB layout is:
= 1.12 W
----------------------
80
The thermal resistance for the SO20 is approximately
55 K/W if applied to a PCB with wider copper tracks to the
corner pins and just under the body of the IC.
The maximum total power dissipation for this practical
application is:
150 – 60
= 1.63 W
----------------------
Using double push buttons, the volume step for both
channels can be controlled. When for the balance control
only a single contact is used, the balance steps are
1.25 dB. If double contacts are used for the balance
buttons and the dashed connection is made, then the
balance steps are 2.5 dB.
55
1998 Jun 02
15
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
Application without volume control
If pins 6, 7 and 8 are hardwired together the device operates with the volume control setting at maximum.
When the supply voltage is connected and the device is switched from standby to mute or operating for the first time then
the gain is ramped up from −20 dB to +20 dB. This takes approximately 5 s.
This maximum gain setting is maintained until the supply voltage drops below the minimum value.
balance left
V
V
DD
DD
2.2 kΩ
2.2 kΩ
up
UP/DOWN1
6
7
100 nF
TDA8552T
volume
UP/DOWN2
100 nF
down
MGM612
V
DD
balance right
Fig.5 Volume and balance control using buttons.
1998 Jun 02
16
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
MGR005
MGR006
20
40
handbook, halfpage
handbook, halfpage
G
(dB)
I
DD
(mA)
20
0
15
10
5
(1)
−20
−40
(2)
0
2
−60
3
4
5
6
0
20
40
60
80
V
(V)
volume steps
DD
VDD = 5 V; RL = 8 Ω.
(1) Gv = 30 dB (max.).
(2) Gv = 20 dB (max.).
RL = ∞.
Fig.6 IDD as a function of VDD
.
Fig.7 Gain as a function of volume steps.
MGR007
MGR008
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(2)
(1)
(2)
(3)
(3)
(4)
−1
−1
10
10
−2
−2
10
10
−2
−1
−2
−1
10
10
1
10
10
10
1
10
P
(W)
P
(W)
o
o
VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 30 dB (max.).
(1) Gv = 0 dB.
VDD = 5 V; RL = 8 Ω; f = 1 kHz; Gv = 20 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(3) Gv = 20 dB.
(2) Gv = 7 dB.
(4) Gv = 30 dB.
(3) Gv = 20 dB.
Fig.8 THD as a function of Po.
Fig.9 THD as a function of Po.
1998 Jun 02
17
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
MGR009
MGR010
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
(1)
(1)
1
1
(2)
(3)
(2)
(3)
−1
−1
10
10
−2
−2
10
10
−2
−1
−2
−1
10
10
1
10
10
10
1
10
P
(W)
P
(W)
o
o
VDD = 5 V; RL = 8 Ω; Gv = 20 dB (max.).
(1) f = 10 kHz.
VDD = 5 V; RL = 8 Ω; Gv = 30 dB (max.).
(1) f = 10 kHz.
(2) f = 1 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
(3) f = 100 Hz.
Fig.10 THD as a function of Po.
Fig.11 THD as a function of Po.
MGR011
MGR012
10
10
handbook, halfpage
handbook, halfpage
THD
(%)
THD
(%)
1
1
(1)
(1)
(2)
(3)
(2)
(3)
−1
−1
10
10
−2
−2
10
10
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VDD = 5 V; RL = 8 Ω; Po = 0.1 W; Gv = 20 dB (max.).
(1) Gv = 0 dB.
VDD = 5 V; RL = 8 Ω; Po = 0.1 W; Gv = 30 dB (max.).
(1) Gv = 0 dB.
(2) Gv = 7 dB.
(2) Gv = 7 dB.
(3) Gv = 20 dB.
(3) Gv = 30 dB.
Fig.12 THD as a function of frequency.
Fig.13 THD as a function of frequency.
1998 Jun 02
18
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
MGR014
MGR013
2.4
0
handbook, halfpage
handbook, halfpage
V
(1)
(2)
i
SVRR (1)
(dB)
(V)
2
(2)
−20
1.6
1.2
0.8
0.4
(3)
(4)
−40
(5)
(6)
−60
0
−50
−80
2
3
4
5
−30
−10
0
10
30
10
10
10
10
10
f (Hz)
G (dB)
VDD = 5 V; RL = 8 Ω; Vref = 100 mV.
(1) C3 = 10 µF; Gv = 20 dB.
(2) C3 = 10 µF; Gv = 7 dB.
(3) C3 = 100 µF; Gv = 20 dB.
(4) C3 = 10 µF; Gv = 10 dB.
(5) C3 = 100 µF; Gv = 7 dB.
(6) C3 = 100 µF; Gv = 10 dB.
VDD = 5 V; RL = 8 Ω; f = 1 kHz; THD = 1%.
(1) Gv = 20 dB (max.).
(2) Gv = 30 dB (max.).
Fig.14 SVRR as a function of frequency.
Fig.15 Input voltage as a function of gain.
MGL436
MGL435
0
0
handbook, halfpage
handbook, halfpage
α
α
sup
(dB)
cs
(dB)
−20
−20
−40
−60
−80
−40
−60
(1)
(2)
(1)
(2)
−80
−100
−100
2
3
4
5
2
3
4
5
10
10
10
10
10
10
10
10
10
10
f (Hz)
f (Hz)
VP = 5 V; Vo = 1 V; VHPS = VP.
(1) Channel 1.
VP = 5 V; Vo = 1 V.
(1) Gv = 30 dB.
(2) Gv = 20 dB.
(2) Channel 2.
Fig.16 Channel suppression as a function of
frequency.
Fig.17 Channel separation as a function of
frequency.
1998 Jun 02
19
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
77
79
top view
bottom view
GND
+Vdd
220 µF
1.5 kΩ
UP
100 nF
MODE
820
kΩ
IN1
100 kΩ
330 nF
330 nF
20
1
1.5 kΩ
150 nF
DOWN
220 µF
TDA8552/53TS
IN2
20 dB
30 dB
220 µF
220 µF
HP
5 Ω
1 kΩ
5 Ω
TDA
8552/53TS
Analog Audio
CIC – Nijmegen
1 kΩ
− OUT1 +
− OUT2 +
MGR015
Fig.18 Printed-circuit board layout.
20
1998 Jun 02
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
PACKAGE OUTLINES
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
y
H
E
v
M
A
Z
20
11
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
w
detail X
e
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
0.25
0.01
1.27
0.050
1.4
0.25 0.25
0.1
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.51
0.014 0.009 0.49
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT163-1
075E04
MS-013AC
1998 Jun 02
21
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A
X
c
y
H
v
M
A
E
Z
11
20
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
10
detail X
w
M
b
p
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
10o
0o
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
6.6
6.2
0.75
0.45
0.65
0.45
0.48
0.18
mm
1.5
0.65
1.0
0.2
0.25
0.13
0.1
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
90-04-05
95-02-25
SOT266-1
1998 Jun 02
22
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
SOLDERING
Introduction
SSOP
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Reflow soldering
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
Reflow soldering techniques are suitable for all SO and
SSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
METHOD (SO AND SSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
SO
Repairing soldered joints
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1998 Jun 02
23
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jun 02
24
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
NOTES
1998 Jun 02
25
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
NOTES
1998 Jun 02
26
Philips Semiconductors
Preliminary specification
2 × 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
TDA8552T; TDA8552TS
NOTES
1998 Jun 02
27
Philips Semiconductors – a worldwide company
Argentina: see South America
Middle East: see Italy
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Fax. +43 160 101 1210
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
Norway: Box 1, Manglerud 0612, OSLO,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belgium: see The Netherlands
Brazil: see South America
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Portugal: see Spain
Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Colombia: see South America
Czech Republic: see Austria
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Slovakia: see Austria
Slovenia: see Italy
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
545102/1200/02/pp28
Date of release: 1998 Jun 02
Document order number: 9397 750 03733
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