TEA0676T [NXP]
Dual pre-amplifier and equalizer for reverse tape decks; 双前置放大器和均衡器反向磁带机
| 型号： | TEA0676T |
| 厂家： | 
NXP |
| 描述： | Dual pre-amplifier and equalizer for reverse tape decks |
| 文件： | 总20页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
TEA0676T
Dual pre-amplifier and equalizer for
reverse tape decks
1997 Oct 07
Product specification
Supersedes data of 1996 Jun 20
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
FEATURES
GENERAL DESCRIPTION
• Dual head pre-amplifiers
The TEA0676T is a monolithic bipolar integrated circuit
intended for applications in car radios. It includes head and
equalization amplifiers with electronically switchable time
constants. Furthermore it includes electronically
• Reverse head switching
• Equalization with electronically switched time constants
• Output level like Dolby level of 387.5 mV = 0 dB
• Improved EMC behaviour.
switchable inputs for tape drivers with reverse heads.
The device will operate with power supplies in a range of
7.6 to 12.0 V. The output overload level increases with the
increase in supply voltage, so it is advisable to use a
regulated power supply or a supply with a long time
constant.
QUICK REFERENCE DATA
SYMBOL
VCC
PARAMETER
supply voltage
CONDITIONS
MIN.
7.6
TYP.
10
MAX. UNIT
12
V
ICC
supply current
VCC = 10 V
−
10
73
13
mA
dB
signal plus noise-to-noise ratio
unweighted RMS value
67
−
S + N
--------------
N
Vo (rms)
output voltage (0 dB) (RMS value)
gain internal = 40 dB; linear
−
387.5
−
mV
ORDERING INFORMATION
TYPE
PACKAGE
NUMBER
NAME
DESCRIPTION
VERSION
TEA0676T
SO16
plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
1997 Oct 07
2
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
BLOCK DIAGRAM
10 µF
180 Ω
330 kΩ
1 kΩ
head
switch
equalizer
switch
470
pF
470
pF
10
µF
120 µs
18 kΩ
IN1
IN2
70 µs
10 nF
8.2 kΩ
27 kΩ
10 µF
EQSW
15
EQINB
13
GND
INB1
11
HSW
10
INB2
9
OUTB
16
EQOUTB
14
12
EQ
AMPLIFIER
PRE-
AMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
PRE-
AMPLIFIER
AMPLIFIER
3
4
5
6
7
8
2
1
n.c.
OUTA
EQOUTA
EQINA
V
INA1
V
INA2
CC
ref
10 µF
10 nF
8.2 kΩ
100
µF
10 V
470
pF
470
pF
330 kΩ
1 kΩ
10 µF
180 Ω
MGE862
Fig.1 Block and application diagram.
3
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
PINNING
SYMBOL
PIN
DESCRIPTION
output channel A
OUTA
n.c.
1
2
3
4
5
6
not connected
EQOUTA
EQINA
VCC
output equalizer channel A
input equalizer channel A
supply voltage
handbook, halfpage
OUTA
n.c.
1
2
3
4
5
6
7
8
16
OUTB
EQSW
EQOUTB
EQINB
GND
15
14
13
12
11
10
9
INA1
input channel A1
(forward or reverse)
EQOUTA
EQINA
Vref
7
8
reference voltage
INA2
input channel A2
TEA0676T
V
CC
(reverse or forward)
INA1
INB1
INB2
9
input channel B2
(reverse or forward)
V
HSW
ref
HSW
INB1
10
11
input head switch
INB2
INA2
input channel B1
MGE861
(forward or reverse)
GND
12
13
14
15
16
ground
EQINB
EQOUTB
EQSW
OUTB
input equalizer channel B
output equalizer channel B
input equalizer switch
output channel B
Fig.2 Pin configuration.
INB2 are active) or connected to HIGH level (0.8VCC
(inputs INA1, INB1 are active).
)
FUNCTIONAL DESCRIPTION
Gain of pre-amplifier = 30 dB; minimum gain of
EQ-amplifier = 24.5 dB at f = 1 kHz with 70 µs cut-off
frequency.
Equalization time constant switching (70 µs/120 µs) is
achieved when pin 15 (EQSW) is connected to ground via
an 18 kΩ resistor (120 µs) or left open-circuit (70 µs).
Head switching is achieved when pin 10 (HSW) is
connected to ground via a 27 kΩ resistor (inputs INA2,
1997 Oct 07
4
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
14
UNIT
VCC
supply voltage
0
0
V
V
∆V(12-x)
Tstg
voltage at pins 1 to 11, 13 to 16 with respect to pin 12
storage temperature
VCC
−55
+150
+85
°C
°C
V
Tamb
Ves
operating ambient temperature
electrostatic handling voltage
−40
note 1
note 2
−2000
−500
+2000
+500
V
Notes
1. Human body model: C = 100 pF; R = 1.5 kΩ.
2. Machine model: C = 200 pF; R = 0 Ω.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
70
UNIT
Rth j-a
K/W
1997 Oct 07
5
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
CHARACTERISTICS
VCC = 10 V; RL = 10 kΩ; CL = 2.5 nF; Tamb = 25 °C; Vo = 0 dB means 387.5 mV at output; all levels are referenced to
387.5 mV with 0 dB as standard; EQ switch in 70 µs position; unless otherwise specified; see notes 1 and 2.
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
ICC
supply voltage (pin 5)
supply current
7.6
−
10.0
12.0
V
10
13
mA
%
THD
total harmonic distortion
f = 1 kHz; Vo = 0 dB
f = 10 kHz; Vo = 6 dB
−
0.08
0.15
−
0.15
0.3
−
−
%
HR
headroom at output
VCC = 7.6 V; THD = 1%;
f = 1 kHz
12
dB
PSRR
αcs
power supply ripple
rejection
V
R(rms) < 0.25 V; f = 1 kHz
−
50
63
−
−
dB
dB
dB
dB
dB
channel separation
selective measurement;
f = 1 kHz; Vo = 10 dB
57
−
αm
channel matching
selective measurement;
f = 1 kHz; Vo = 0 dB
−0.5
70
+0.5
−
αct
crosstalk between active
and inactive input
selective measurement;
f = 1 kHz; Vo = 10 dB
77
73
signal plus noise-to-noise unweighted;
ratio (RMS value)
67
−
S + N
--------------
N
f = 20 Hz to 20 kHz; Rs = 0 Ω;
internal gain 40 dB; linear;
see Fig.13
Vno(rms)
Gv
equivalent input noise
voltage (RMS value)
unweighted;
f = 20 Hz to 20 kHz; Rs = 0 Ω
−
0.8
30
−
µV
voltage gain of
pre-amplifier
from pin INA1 or INA2 to
pin EQINA and from pin INB1
or INB2 to pin EQINB
29
31
dB
Av
open-loop amplification
pin INA1 to pin OUTA and
pin INB1 to pin OUTB
f = 10 kHz
f = 400 Hz
80
86
−
dB
dB
kΩ
kΩ
104
4.7
60
110
5.8
100
−
REQ
ZI
equalization resistor
6.9
−
input impedance
pre-amplifier
ZO
output impedance
EQ-amplifier
−
80
100
Ω
RL
output load resistance
output load capacitance
input offset voltage
10
0
−
−
2
−
kΩ
nF
CL
10
−
Voffset(DC)
pins INA1, INA2, INB1 and
INB2 connected to Vref
−
mV
IO(GND)
IO(VCC)
EMC
DC current capability
DC current capability
output to ground
output to VCC
−2
300
−
−
−
−
−
mA
µA
−
DC offset voltage at
pins 1 and 16
f = 900 MHz; Vi = 6 V (RMS);
see Figs 12, 14 and 15
50
mV
1997 Oct 07
6
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Switching thresholds
EQUALIZATION TIME CONSTANT SWITCHING
VEQSW
IEQSW
pin voltage
load current +100 to −100 µA
VEQSW = 0 to VCC
−
0.8VCC
−
V
input current
−180
1⁄2VCC + 0.5
−
−
−
+180
VCC
1⁄2VCC − 0.5 V
µA
VEQSW(HIGH) pin voltage
VEQSW(LOW) pin voltage
time constant 70 µs active
time constant 120 µs active
V
0
HEAD SWITCHING
VHSW
IHSW
pin voltage
load current +90 to −90 µA
VHSW = 0 to VCC
−
0.8VCC
−
V
input current
−170
1⁄2VCC + 0.5
−
−
−
+170
VCC
1⁄2VCC − 0.5 V
µA
VHSW(HIGH) HIGH-level pin voltage
inputs INA1 and INB1 active
inputs INA2 and INB2 active
V
VHSW(LOW)
LOW-level pin voltage
0
Notes
1. For an application with a fixed equalization time constant of 120 µs the equalizing network may be applied completely
external. In this application the 8.2 kΩ resistor has to be changed to 14 kΩ and the internal resistor REQ = 5.8 kΩ
must be short-circuited by fixing the equalization switch input at 70 µs (pin 15 left open-circuit). To activate the inputs
INA1 and INB1, pin 10 (HSW) might be left open-circuit. In this event the DC level at pin 10 (HSW) is 0.8VCC
2. It is recommended to switch off VCC with a gradient of 400 V/s at maximum to avoid plops on the tape in the event
of contact between tape and tape head while switching off.
1997 Oct 07
7
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
INTERNAL PIN CONFIGURATIONS
handbook, halfpage
1
handbook, halfpage
3
+
+
5 V
5 V
80 Ω
80 Ω
100
Ω
100
Ω
5.8
kΩ
MGE863
MGE864
Fig.3 Pins 1 and 16: output channel.
Fig.4 Pins 3 and 14: equalizer outputs.
handbook, halfpage
4
+
handbook, halfpage
5
10 kΩ
1 pF
MGE866
MGE865
Fig.5 Pins 4 and 13: equalizer inputs.
1997 Oct 07
Fig.6 Pin 5: supply voltage.
8
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
handbook, halfpage
6
5 V
+
handbook, halfpage
+
2.5 kΩ
2.5 kΩ
5 V
7
220 Ω
12
pF
100 kΩ
MGE868
5 V
MGE867
Fig.7 Pins 6, 8, 9, 11: input channel.
Fig.8 Pin 7: reference voltage.
handbook, halfpage
10
8 V
handbook, halfpage
15
8 V
+
+
MGE870
MGE869
Fig.9 Pin 10: input head switch.
Fig.10 Pin 15: input equalizer switch.
1997 Oct 07
9
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
TEST AND APPLICATION INFORMATION
10 µF
200 Ω
180 Ω
equalizer
switch
330 kΩ
470
pF
1 kΩ
head
switch
470
pF
10 kΩ
10
µF
120 µs
18 kΩ
IN1
IN2
70 µs
10
µF
10
µF
10 nF
200 Ω
8.2 kΩ
27 kΩ
10 µF
EQSW
15
EQINB
13
GND
INB1
11
HSW
10
INB2
9
OUTB
16
EQOUTB
14
12
EQ
PRE-
AMPLIFIER
AMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
PRE-
AMPLIFIER
AMPLIFIER
3
4
5
6
7
8
2
1
n.c.
OUTA
EQOUTA
EQINA
V
INA1
V
INA2
CC
ref
10 µF
10 nF
200 Ω
8.2 kΩ
100
µF
10
µF
10 V
10
µF
470
pF
470
pF
10 kΩ
200 Ω
10 µF
330 kΩ
1 kΩ
180 Ω
MGE871
Fig.11 Test circuit.
10
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
head
switch
470
pF
470
pF
200 Ω
200 Ω
10 kΩ
10
µF
IN1
IN2
20 kΩ
27 kΩ
10 µF
EQSW
15
EQINB
13
GND
INB1
11
HSW
10
INB2
9
OUTB
16
EQOUTB
14
12
EQ
AMPLIFIER
PRE-
AMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
PRE-
AMPLIFIER
AMPLIFIER
3
4
5
6
7
8
2
1
n.c.
OUTA
EQOUTA
EQINA
V
INA1
V
INA2
CC
ref
10 µF
20 kΩ
100
µF
10 V
470
pF
470
pF
200 Ω
200 Ω
10 kΩ
10 Ω
40 Ω
f = 900 MHz
V = 6 V (RMS)
i
MGE872
Fig.12 EMC test diagram.
11
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
equalizer
head
switch
10 kΩ
switch
10
µF
120 µs
70 µs
IN1
IN2
20 kΩ
18 kΩ
27 kΩ
10 µF
EQSW
15
EQINB
13
GND
12
INB1
11
HSW
10
INB2
9
OUTB
16
EQOUTB
14
EQ
AMPLIFIER
PRE-
AMPLIFIER
POWER
SUPPLY
LOGIC
TEA0676T
EQ
PRE-
AMPLIFIER
AMPLIFIER
3
4
5
6
7
8
2
1
n.c.
OUTA
EQOUTA
EQINA
V
INA1
V
INA2
CC
ref
10 µF
20 kΩ
100
µF
10 V
10 kΩ
MGE873
Fig.13 Noise test diagram.
12
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
LAYOUT OF PRINTED CIRCUIT BOARD FOR EMC TEST CIRCUIT
54
50
27 kΩ
200 Ω
470 pF
10 kΩ
200 Ω
470 pF
20 kΩ
0 Ω
100 nF
0 Ω
100 nF
40 Ω
10 Ω
TEA0676T
0 Ω
0 Ω
20 kΩ
10 kΩ
470 pF
200 Ω
470 pF
200 Ω
MBH457
Fig.14 Top side with components.
13
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
54
50
10 µF
X2
10 µF
S1
MP
100 µF
100 µF
X3
X4
MP
MP
HFDR.
10 µF
X1
MBH458
Fig.15 Bottom side with components.
14
1997 Oct 07
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
PACKAGE OUTLINE
SO16: plastic small outline package; 16 leads; body width 7.5 mm
SOT162-1
D
E
A
X
c
H
v
M
A
E
y
Z
16
9
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
8
detail X
e
w
M
b
p
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
max.
(1)
(1)
(1)
UNIT
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
θ
1
2
3
p
E
p
Z
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
10.5
10.1
7.6
7.4
10.65
10.00
1.1
0.4
1.1
1.0
0.9
0.4
mm
2.65
1.27
0.050
1.4
0.25
0.01
0.25
0.1
0.25
0.01
8o
0o
0.012 0.096
0.004 0.089
0.019 0.013 0.41
0.014 0.009 0.40
0.30
0.29
0.419
0.394
0.043 0.043
0.016 0.039
0.035
0.016
inches 0.10
0.055
0.01 0.004
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
95-01-24
97-05-22
SOT162-1
075E03
MS-013AA
1997 Oct 07
15
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1997 Oct 07
16
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 07
17
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 07
18
Philips Semiconductors
Product specification
Dual pre-amplifier and equalizer for
reverse tape decks
TEA0676T
NOTES
1997 Oct 07
19
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South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Uruguay: see South America
Vietnam: see Singapore
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/02/pp20
Date of release: 1997 Oct 07
Document order number: 9397 750 02743
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